Detailed electronic structure of three-dimensional Fermi surface and its sensitivity to charge density wave transition in ZrTe_3 revealed by high resolution laser-based angle-resolved photoemission spectroscopy

The detailed information of the electronic structure is the key to understanding the nature of charge density wave(CDW) order and its relationship with superconducting order in the microscopic level. In this paper, we present a high resolution laser-based angle-resolved photoemission spectroscopy(ARPES) study on the three-dimensional(3 D) hole-like Fermi surface around the Brillouin zone center in a prototypical quasi-one-dimensional CDW and superconducting system ZrTe_3. Double Fermi surface sheets are clearly resolved for the 3 D hole-like Fermi surface around the zone center. The3 D Fermi surface shows a pronounced shrinking with increasing temperature. In particular, the quasiparticle scattering rate along the 3 D Fermi surface experiences an anomaly near the charge density wave transition temperature of ZrTe_3(～ 63 K). The signature of electron–phonon coupling is observed with a dispersion kink at ～ 20 me V; the strength of the electron–phonon coupling around the 3 D Fermi surface is rather weak. These results indicate that the 3 D Fermi surface is also closely connected to the charge-density-wave transition and suggest a more global impact on the entire electronic structure induced by the CDW phase transition in ZrTe_3.     

Superconductivity and Charge Density Wave in Iodine-Doped CuIr_2Te_4

We report a systematic investigation on the evolution of the structural and physical properties,including the charge density wave(CDW) and superconductivity of the polycrystalline CuIr_2Te_(4-x)I_x for 0.0 ≤x ≤ 1.0.Xray diffraction results indicate that both of a and c lattice parameters increase linearly when 0.0 ≤ x ≤ 1.0.The resistivity measurements indicate that the CDW is destabilized with slight x but reappears at x≥0.9 with very high T_(CDW).Meanwhile,the superconducting transition temperature T_c enhances as x increases and reaches a maximum value of around 2.95 K for the optimal composition CuIr_2Te_(1.9)I_(0.1) followed by a slight decrease with higher iodine doping content.The specific heat jump(ΔC/γT_c) for the optimal composition CuIr_2Te_(3.9)I_(0.1) is approximately 1.46,which is close to the Bardeen-Cooper-Schrieffer value of 1.43,indicating that it is a bulk superconductor.The results of thermodynamic heat capacity measurements under different magnetic fields |C_p(T,H)],magnetization M(T,H) and magneto-transport ρ(T,H) measurements further suggest that CuIr_2Te_(4-x)I_x bulks are type-Ⅱ superconductors.Finally,an electronic phase diagram for this CuIr_2Te_(4-x)I_x system has been constructed.The present study provides a suitable material platform for further investigation of the interplay of the CDW and superconductivity.     

Progress in studying entanglement and steering from the macroscopic view

Magnons,the collective excitation of magnetically ordered materials,have attracted considerable interest for their low energy consumption,long coherence time and useful working frequency from gigahertz to terahertz.Besides,magnons can coherently interact with phonons,microwave and optical photons,as well as superconducting qubits,as schematically depicted in Figure 1,providing a novel platform to achieve hybrid quantum systems[1].Hybridizing distinct quantum systems with multitasking capabilities is critical in quantum information processing,because a single quantum system cannot keep pace with the fast development of quantum information and satisfy the requirement of building perfect quantum information networks[2].The emergying field cavity spintronics has inspired many interesting physics like nonreciprocal microwave propagation and energy level attraction,together with quite a few applications such as magnon sensors and magnon-photon transducers.     

Chemical modification of silicene

Silicene is a two-dimensional(2D) material, which is composed of a single layer of silicon atoms with sp2–sp3mixed hybridization. The sp2–sp3mixed hybridization renders silicene excellent reactive ability, facilitating the chemical modification of silicene. It has been demonstrated that chemical modification effectively enables the tuning of the properties of silicene. We now review all kinds of chemical modification methods for silicene, including hydrogenation, halogenation,organic surface modification, oxidation, doping and formation of 2D hybrids. The effects of these chemical modification methods on the geometrical, electronic, optical, and magnetic properties of silicene are discussed. The potential applications of chemically modified silicene in a variety of fields such as electronics, optoelectronics, and magnetoelectronics are introduced. We finally envision future work on the chemical modification of silicene for further advancing the development of silicene.     

A novel integrated ultraviolet photodetector based on standard CMOS process

A novel integrated ultraviolet(UV) photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared(IR) photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV–IR photodetector has a maximum spectral responsivity of 0.27 A·W-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000,which is much higher than that of the single UV photodiode.     

Development of a 500 MHz high power RF test stand

A flexible high power RF test stand has been designed and constructed at IHEP to test a variety of 500 MHz superconducting RF components for the upgrade project of the Beijing Electron Positron Collider (BEPCⅡ), such as the input coupler, the higher order modes (HOMs) absorber and so on. A high power input coupler has been conditioned and tested with the RF power up to 250 kW in continuous wave (CW), traveling wave (TW) mode and 150 kW CW in standing wave (SW) mode. A prototype of the HOMs absorber has been tested to absorb power of 4.4 kW. An introduction of the test stand design, construction and high power tests is presented in this paper.     

Structural and electrical transport properties of charge density wave material LaAgSb_2 under high pressure

Layered lanthanum silver antimonide LaAgSb_2 exhibits both charge density wave(CDW) order and Dirac-cone-like band structure at ambient pressure.Here,we systematically investigate the pressure evolution of structural and electronic properties of LaAgSb_2 single crystal.We show that the CDW order is destabilized under compression,as evidenced by the gradual suppression of magnetoresistance.At P_C～22 GPa,synchrotron x-ray diffraction and Raman scattering measurements reveal a structural modification at room-temperature.Meanwhile,the sign change of the Hall coefficient is observed at 5 K.Our results demonstrate the tunability of CDW order in the pressurized LaAgSb_2 single crystal,which can be helpful for its potential applications in the next-generation devices.     

Optoelectronic properties of bottom gate-defined in-plane monolayer WSe_2 p–n junction

Monolayer transition-metal dichalcogenides(TMDs) are considered to be fantastic building blocks for a wide variety of optical and optoelectronic devices such as sensors, photodetectors, and quantum emitters, owing to their direct band gap,transparency, and mechanical flexibility. The core element of many conventional electronic and optoelectronic devices is the p–n junction, in which the p-and n-types of the semiconductor are formed by chemical doping in different regions.Here, we report a series of optoelectronic studies on a monolayer WSe_2 in-plane p–n photodetector, demonstrating a lowpower dissipation by showing an ambipolar behavior with a reduced threshold voltage by a factor of two compared with the previous results on a lateral electrostatically doped WSe_2 p–n junction. The fabrication of the device is based on a polycarbonates(PC) transfer technique and hence no electron-beam exposure induced damage to the monolayer WSe_2 is expected. Upon optical excitation, the photodetector demonstrates a photoresponsivity of 0.12 mA·W~(-1) and a maximum external quantum efficiency of 0.03%. Our study provides an alternative platform for a flexible and transparent twodimensional photodetector, from which we expect to further promote the development of next-generation optoelectronic devices.     

Successful Nitrogen Doping of 1.3 GHz Single Cell Superconducting Radio-Frequency Cavities

A high intrinsic quality factor(Q_0) of a superconducting radio-frequency cavity is beneficial to reducing the operation costs of superconducting accelerators. Nitrogen doping(N-doping) has been demonstrated as a useful way to improve Q_0 of the superconducting cavity in recent years. N-doping researches with 1.3 GHz single cell cavities are carried out at Peking University and the preliminary results are promising. Our recipe is slightly different from other laboratories. After 250 μm polishing, high pressure rinsing and 3 h high temperature annealing, the cavities are nitrogen doped at 2.7–4.0 Pa for 20 min and then followed by 15 μm electropolishing. Vertical test results show that Q_0 of a 1.3 GHz single cell cavity made of large grain niobium has increased to 4 × 10~(10) at 2.0 K and medium gradient.     

Effect of Te doping on superconductivity and charge-density wave in dichalcogenides 2H-NbSe2-xTex （x = 0, 0.1, 0.2）

Single crystals of Te-doped dichalcogenides 2H-NbSe2-xTex （x ---- 0, 0.10, 0.20） were grown by vapour transport method. The effect of Te doping on the superconducting and charge-density wave （CDW） transitions has been investigated. The sharp decrease of residual resistance ratio, RRR = R（3OOK）/R（SK）, with increasing Te content was observed, indicating that the disorder in the conducting plane is induced by Te doping. Meanwhile the superconducting transition temperature, Tc, decreases monotonically with Te content. However, the CDW transition temperature, TCDW, shown by a small jump in the temperature dependence of the resistivity near 30 K, increases slightly. The results show that the suppression of superconductivity might be caused by the enhancement of CDW ordering. The disorder has little influence on the CDW ordering.     

Graphene/SrTiO_3 interface-based UV photodetectors with high responsivity

Strontium titanate(SrTiO3),which is a crucial perovskite oxide with a direct energy band gap of 3.2 eV,holds great promise for ultraviolet(UV)photodetection.However,the response performance of the conventional SrTiO3-based photodetectors is limited by the large relative dielectric constant of the material,which reduces the internal electric field for electron-hole pair separation to form a current collected by electrodes.Recently,graphene/semiconductor hybrid photodetectors by van-der-Waals heteroepitaxy method demonstrate ultrahigh sensitivity,which is benefit from the interface junction architecture and then prolonged lifetime of photoexcited carriers.Here,a graphene/SrTiO3 interface-based photodetector is demonstrated with an ultrahigh responsivity of 1.2×106 A/W at the wavelength of 325 nm and～2.4×104 A/W at 261 nm.The corresponding response time is in the order of～ms.Compared with graphene/GaN interface junctionbased hybrid photodetectors,～2 orders of magnitude improvement of the ultrahigh responsivity originates from a gain mechanism which correlates with the large work function difference induced long photo-carrier lifetime as well as the low background carrier density.The performance of high responsivity and fast response speed facilitates SrTiO3 material for further efforts seeking practical applications.     

First-principles verification of CuNNi_3 and ZnNNi_3 as phonon mediated superconductors

Very recently, a new Ni-based antiperovskite nitride superconductor CuNNi3 has been successfully synthesized. We investigate the electronic structures, phonon dispersions, and electron–phonon interactions of CuNNi3 and the isostructual ZnNNi3 by first-principles approach. By analyzing the Eliashberg function we obtain the superconducting transition temperature Tc 3.16 K(3.53 K), which is in good agreement with corresponding experimental Tc 3.2 K(3 K) for Cu NNi3(ZnNNi3). They can be verified as conventional phonon-mediated superconductors.     

Intermediate sp-hybridization for chemical bonds in nonplanar covalent molecules of carbon

General representations for symmetrical and asymmetrical intermediate sp-hybridization are provided, with which the development of electronic structure in C3v-symmetrical C2H6and the bonding configuration in C60have been analyzed as an example. The spherical structure of C60does not necessarily require the fourth hybrid, h4, to lie along the radial direction. Rather, h4runs at an angle of 3.83?from the radius, in the plane bisecting a pentagon, to achieve maximum overlap with adjacent h4-hybrids. By virtue of these representations, a number of properties of covalent molecules and solids can be conveniently calculated. This work might be particularly helpful for the study of C–C bonding in curved structures of carbon, such as fullerenes, carbon nanotubes, and buckled graphene.     

Direct Microwave Synthesis of 11-Type Fe(Te,Se) Polycrystalline Superconductors with Enhanced Critical Current Density

We report a direct microwave synthesis method for the preparation of 11-type high quality Fe(Te,Se) polycrystalline superconductors. The bulk samples are rapidly synthesized under the microwave irradiation during several minutes, with a subsequent annealing process at 400℃. The samples exhibit a nearly single phase of the tetragonal PbO-type crystal structure with minor impurities. Morphology characterization shows high density, tight grain connectivity and large grain sizes around 100 μm with small cavities inside the sample. Resistivity and magnetization measurements both show similar superconducting transitions above 14 K. The magnetic hysteresis measurements display broad and symmetric loops without magnetic background, and a high critical current density J_c about 1.2 × 10~4 A/cm~2 at 2 K and 7 T is estimated by the Bean model. Compared with the solidstate reaction synthesized samples, these superconducting bulks from microwave-assisted synthesis are possibly free of the interstitial Fe due to smaller c-axis, higher T_c in magnetic transitions, better M–H loops without magnetic background and greatly enhanced J_c, and are promising as raw materials for the non-toxic Fe-based superconducting wires for large currents and high field applications.     

Sensitive absorption measurements of hydrogen sulfide at 1.578 μm using wavelength modulation spectroscopy

Sensitive detection of hydrogen sulfide(H2S) has been performed by means of wavelength modulation spectroscopy(WMS) near 1.578 μm. With the scan amplitude and the stability of the background baseline taken into account, the response time is 4 s for a 0.8 L multi-pass cell with a 56.7 m effective optical path length. Moreover, the linearity has been tested in the 0–50 ppmv range. The detection limit achievable by the Allan variance is 224 ppb within 24 s under room temperature and ambient pressure conditions. This tunable diode laser absorption spectroscopy(TDLAS) system for H2 S detection has the feasibility of real-time online monitoring in many applications.     

Electronic Transport of the Adsorbed Trigonal Graphene Flake： A First Principles Calculation

In recent years, electronic transport through molecular devices has attracted much attention due to the progress in experimental techniques for ma- nipulating individual molecules and the availabil- ity of the first-principles method to describe the elec- trical properties of devices. Graphene, a two- dimensional （2D） network of sp2 hybridized carbon atoms, has stimulated great research interest due to its unique electronic transport properties and its pro- found potential for future device applications. Chemical doping with foreign atoms is generally cho- sen to modify the electronic transport properties of carbon materials. The possibility of functionalizing graphene with radicals such as O, F, and H atoms has been experimentally demonstrated. One- dimensional GNRs and zero-dimensional graphene quantum dots （GQDs）, including triangular, rectangular and hexagonal shapes, which can be ob- tained through the geometry cutting method, pro- vide the possibility to explore low-dimensional trans- port properties for carbon-based nanoelectronics. The trigonal graphene flake （TGF）, a kind of representa- tive zero-dimensional GQD, is prominent in electronic and magnetic properties due to its n-fold degenerated half-filled zero-energy states. This novel property was revealed by both experimental and theoretical studies.     

Electronic and magnetic properties of CrI_3 nanoribbons and nanotubes

CrI_3 in two-dimensional(2D) forms has been attracting much attention lately due to its novel magnetic properties at atomic large scale.The size and edge tuning of electronic and magnetic properties for 2D materials has been a promising way to broaden or even enhance their utility, as the case with nanoribbons/nanotubes in graphene, black phosphorus, and transition metal dichalcogenides.Here we studied the CrI_3 nanoribbon(NR) and nanotube(NT) systematically to seek the possible size and edge control of the electronic and magnetic properties.We find that ferromagnetic ordering is stable in all the NR and NT structures of interest.An enhancement of the Curie temperature T_C can be expected when the structure goes to NR or NT from its 2D counterpart.The energy difference between the FM and AFM states can be even improved by up to 3–4 times in a zigzag nanoribbon(ZZNR), largely because of the electronic instability arising from a large density of states of iodine-5p orbitals at E_F.In NT structures, shrinking the tube size harvests an enhancement of spin moment by up to 4%, due to the reduced crystal-field gap and the re-balance between the spin majority and minority populations.     

Two-Dimensional Borane with ‘Banana' Bonds and Dirac-Like Ring

Designing new two-dimensional(2 D) semiconductors with novel topological characters is highly desirable for further material innovation. We propose a theoretical design of a stable 2 D inorganic material, namely, borane,which is jointly stabilized by traditional B–B localized and unique B–H–B delocalized chemical bonds. In borane,the bonding natures along different directions are distinguishing, which lead to huge differences in mechanical strengths of 142.73 and 97.47 N/m for a and b directions, respectively. In a unit cell, each hydrogen atom binds to two boron atoms forming a three-center-two-electron(3 c-2 e) bridge bond B–H–B. This can be considered as an extension of diborane molecules from 0 D to 2 D. The collaboration of localized and delocalized chemical bonds endows borane with high structural stability, as indicated by its favorable cohesive energy, high mechanical strength, absence of imaginary modes in the phonon spectrum, and moderate melting point. Remarkably, borane has a fascinating electronic property featured with a Dirac-like ring in the electronic band structure. The unique bonding nature and electronic property in borane would attract intensive interests in both theory and experiment.     

Molecule opacities of X~2Σ~+, A~2Π, and B~2Σ~+ states of CS~+

Carbon sulfide cation(CS~+) plays a dominant role in some astrophysical atmosphere environments. In this work, the rovibrational transition lines are computed for the lowest three electronic states, in which the internally contracted multireference configuration interaction approach(MRCI) with Davison size-extensivity correction(+Q) is employed to calculate the potential curves and dipole moments, and then the vibrational energies and spectroscopic constants are extracted. The Frank–Condon factors are calculated for the bands of X~2~+Σ~+–A~2Π and X~2Σ~+–B~2Σ~+systems, and the band of X~2Σ~+–A~2Π is in good agreement with the available experimental results. Transition dipole moments and the radiative lifetimes of the low-lying three states are evaluated. The opacities of the CS~+ molecule are computed at different temperatures under the pressure of 100 atms. It is found that as temperature increases, the band systems associated with different transitions for the three states become dim because of the increased population on the vibrational states and excited electronic states at high temperature.     

Two Superconducting Phases and Their Characteristics in Layered BaTi2（Sb1-xBix）2O with x=0.16

Two correlated superconducting phases are identified in the layered superconductor BaTh （Sb1-xBix）2O （x = 0.16）, with the superconducting transition temperatures of Tc = 6K （the high Tc phase） and 3.4K （the low Tc Phase）, respectively. The 6K superconducting phase appears first in the as-prepared sample and can decay into the low TC phase by exposure to an ambient atmosphere for a certain duration. Specially, the high Tc phase can reappear from the decayed sample with the low Tc phase by vacuum annealing. It is also found that the CDW /SDW order occurs only with the 6 K superconducting phase. These notable features and alteration of the superconductivity due to the post-processing and external pressure can be explained by the scenario of electronic phase separation.