高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器

混合结构的石墨烯/半导体光电晶体管因其超高的响应度而备受关注。然而,该类光电晶体管通过源-漏电极测试得到的比探测率(D*)容易受到1/f噪声的限制。本文制备了混合结构的石墨烯/GaAs光电探测器,通过源-栅电极测得D*大约为1.82×10¹¹ Jones,与通过源-漏电极测量相比,D*提高了约500倍。这可归因于界面上肖特基势垒对载流子俘获和释放过程的屏蔽作用。此外,探测器的上升时间和下降时间分别是4 ms和37 ms,响应速度相应地提高了2个数量级。该工作为制备高比探测率和高速的光电探测器提供了一种新的思路。     

Graphene/SrTiO_3 interface-based UV photodetectors with high responsivity

Strontium titanate(SrTiO3),which is a crucial perovskite oxide with a direct energy band gap of 3.2 eV,holds great promise for ultraviolet(UV)photodetection.However,the response performance of the conventional SrTiO3-based photodetectors is limited by the large relative dielectric constant of the material,which reduces the internal electric field for electron-hole pair separation to form a current collected by electrodes.Recently,graphene/semiconductor hybrid photodetectors by van-der-Waals heteroepitaxy method demonstrate ultrahigh sensitivity,which is benefit from the interface junction architecture and then prolonged lifetime of photoexcited carriers.Here,a graphene/SrTiO3 interface-based photodetector is demonstrated with an ultrahigh responsivity of 1.2×106 A/W at the wavelength of 325 nm and～2.4×104 A/W at 261 nm.The corresponding response time is in the order of～ms.Compared with graphene/GaN interface junctionbased hybrid photodetectors,～2 orders of magnitude improvement of the ultrahigh responsivity originates from a gain mechanism which correlates with the large work function difference induced long photo-carrier lifetime as well as the low background carrier density.The performance of high responsivity and fast response speed facilitates SrTiO3 material for further efforts seeking practical applications.