Performance of a double sided silicon strip detector as a transmission detector for heavy ions

The performance of a double sided silicon strip detector （DSSSD）, which is used for the position and energy detection of heavy ions, is reported. The analysis shows that although the incomplete charge collection （ICC） and charge sharing （CS） effects of the DSSSD give rise to a loss of energy resolution, the position information is recorded without ambiguity. Representations of ICC/CS events in the energy spectra are shown and their origins are confirmed by correlation analysis of the spectra from both the junction side and ohmic side of the DSSSD.     

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

In this paper, we investigate the single event transient(SET) occurring in partially depleted silicon-on-insulator(PDSOI) metal–oxide–semiconductor(MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-μm single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and analyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test(DUT). The dependences of SET characteristics on drain-induced barrier lowering(DIBL) and the parasitic bipolar junction transistor(PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.     

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor （MOSFET） when the ion strikes the channel. The main reason is that the polarization-induced charges （the polarization direction here is away from the silicon surface） bring a negative surface po- tential which will affect the distribution of carders and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.     

Study on the pre-chopper in CSNS LEBT

Physical designing of the pre-chopper in CSNS LEBT is carried out, which includes the deflecting voltage, the length and the width of the deflecting plates, and the gap between the deflecting plates. The most outstanding feature of the design is that both the gap and the width vary with the beam envelope size. So both the requried deflecting voltage and the loaded capacitance are lowered. In order to avoid destruction of the space charge neutralization by the pre-chopper in the whole LEBT, an electron-trapping electrode is arranged to confine the electrostatic field of the pre-chopper to the local area. To examine the reliability of the pre-chopping design in CSNS LEBT, a similar pre-chopping design in ADS RFQ LEBT is set up and an experiment on the pre-chopper is prepared. 3-dimensional simulations are carried out to determine the loaded capacitance and the applied voltage of the electron-trapping electrode.     

MoO_3阳极缓冲层对有机太阳电池性能的影响

研究了MoO3阳极缓冲层对基于CuPc/C60异质结的有机小分子太阳电池器件性能的影响。发现:MoO3阳极缓冲层略微降低了器件的短路电流、开路电压及能量转换效率;MoO3阳极缓冲层提高了器件的整流比;具有MoO3阳极缓冲层的器件在持续光照条件下连续工作20min,其主要性能参数(如短路电流、开路电压、填充因子及能量转换效率)无明显衰减,而没有MoO3阳极缓冲层的对比器件在相同条件下连续工作20min,其能量转换效率衰减了大约45%。研究结果表明:MoO3阳极缓冲层明显提高了基于CuPc/C60异质结的有机小分子太阳电池器件的稳定性,可能的原因主要是MoO3阳极缓冲层改善了ITO阳极和CuPc界面,抑制了因持续光照连续工作引起的界面老化,从而提高了器件的稳定性。     

化学气相沉积金刚石薄膜探测器对α粒子的电荷收集效率

 实验测量了自行研制的三明治电极结构化学气相沉积(CVD)金刚石薄膜探测器在室温下对241Am, 243Am 与244Cm α粒子的能谱响应,得到了其α粒子响应电荷收集效率随偏压的变化关系;获得了不同偏压下其相对平均电荷收集效率及响应谱下降沿10%处的相对电荷收集效率。结果表明：所研制的CVD金刚石薄膜探测器性能稳定,对α粒子响应的电荷收集效率随偏压的增加而趋于饱和,对α粒子平均电荷收集效率达33.5%,谱下降沿10%处的电荷收集效率达57%。     

氯化铯甲醇溶液对有机聚合物太阳能电池的影响

研究了氯化铯的甲醇溶液作为阴极修饰层,来提高传统有机聚合物太阳能电池器件性能。通过电容-电压(C-V)测试分析了铝电极和PTB7/PC_(70)BM之间的界面电荷积累情况,同时测试了紫外光电子能谱(UPS),对铝的功函数改变作了研究。结果表明,采用氯化铯的甲醇溶液作阴极修饰层的器件,其短路电流(J_(sc))、开路电压(V_(oc))、填充因子(FF)都有所提高,光电转化效率达到6.36%,与仅用甲醇处理过的器件相比,光电转化效率提高了11%;与未经甲醇处理的器件相比,光电转化效率提高了42.6%。这种一步溶液处理法能够减少电荷积累,同时降低铝电极的功函数,利于电子收集,进而提高器件性能。     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C60异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39V分别提高到0.58V、0.55V,转换效率从0.36%提高到0.44%,短路电流从1.92mA/cm2分别降低到1.77mA/cm2、1.81mA/cm2,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10nm时,器件短路电流密度减少到0.35mA/cm2.开路电压随着厚度的增加逐渐增加,从1nm时的0.43V增加10nm时0.63V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

锗硅异质结晶体管单粒子效应激光微束模拟

对国产锗硅异质结双极晶体管(SiGe HBT)进行了单粒子效应激光微束辐照试验,观测SiGe HBT单粒子效应的敏感区域,测试不同外加电压和不同激光能量下SiGe HBT集电极瞬变电流和电荷收集情况,并结合器件结构对试验结果进行分析。试验结果表明:国产SiGe HBT位于集电极/衬底结内的区域对单粒子效应敏感,波长为1064 nm的激光在能量约为1.5 nJ时诱发SiGe HBT单粒子效应,引起电流瞬变。入射激光能量增强,电流脉冲增大,电荷收集量增加;外加电压增大,电流脉冲的波峰增大;SiGe HBT的单粒子效应与外加电压大小和入射激光能量都相关,电压主要影响瞬变电流的峰值,而电荷收集量主要依赖于入射激光能量。     

Effect of buffer layers on performance of organic photovoltaic devices based on copper phthalocyanine-perylene dye heterojunction

The work presents the results of research on the systems formed from thin films of copper phthalocyanine (CuPc), N-N′-dimethylperylene-3,4,9,10-dicarboximide (MePTCDI), electrodes of ITO and Ag, and from buffer layers: MoO₃ at ITO and BCP at Ag. We have observed the effect of each buffer layer on voltage dependence of dark current and photocurrent, and on open circuit voltage-light intensity relationship. The system with both buffer layers exhibited the highest values of open circuit voltage and fill factor. The buffer layers improve transport of charge carriers within near-electrode regions, reduce dissociation of excitons on electrodes and reveal processes of charge carrier generation and recombination within the CuPc/MePTCDI junction.     

PEG掺杂对钙钛矿太阳能电池的影响

为了提高钙钛矿太阳能电池的能量转化效率,减小回滞现象,研究了聚乙二醇(PEG)掺杂钙钛矿太阳能电池阳极修饰层PEDOT∶PSS对器件性能的影响。通过电容-电压(C-V)测试分析了PEDOT∶PSS修饰层和钙钛矿层之间的界面电荷积累情况,通过电流密度-时间(J-T)瞬态光电流的测量研究了修饰层和钙钛矿层之间缺陷态情况。结果表明,PEG掺杂阳极修饰层提高了器件的短路电流(J_(sc))、开路电压(V_(oc))和填充因子(FF),光电转化效率从7.5%提高到10.0%,光电转化效率提高了33%,经过掺杂后的器件回滞现象明显减弱。这种通过PEG掺杂PEDOT∶PSS的方法能够减少器件界面处的电荷积累和缺陷态,从而减小器件的回滞现象,提高器件的能量转化效率。     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

Charge transfer of 1 ML C60/Ag（100）

We have measured the synchrotron radiation photoelectron spectra of monolayer C60on Ag（100）, By calculating the intensity ratios between the LUMO bands and the two deeper bands （HOMO and HOMO- 1）, we estimate the amount of the charges transferred from Ag（100） to C60 within the range of 1 e to 1.8 e. The results dismay the expectation of surface superconductivity and afford a good reference for further studies of the monolayer C60/Ag（100） system.     

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor(BJT) and the existence of the source plays an important role in supply voltage variation.     

Characteristics of charged and metastable species in micro-discharges of AC- plasma display panel

The temporal effects of charged and metastable particles in the micro-discharges of an AC plasma display panel (AC-PDP) were investigated under actual driving conditions. The discharge gas used in the 4-in PDP was Neon + 4% Xenon. The discharge characteristics in terms of the time scale related to the space-charge decay, wall charge decay, metastable decay, and charge accumulation were investigated using a pulse technique. For Neon + 4% Xenon gas-mixture discharges of 500 torr, 4 /spl mu/s was related to the time scale of the space-charge decay and wall-charge accumulation time. The minimum sustain voltage started to dramatically increase at 20 /spl mu/s, which was related to the time scale of the metastable particles. Whereas, after 40 /spl mu/s, the minimum sustain voltage slowly increased with a slope of 0.01581, which was related to the inverse of the time scale of the wall charge decay.     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

A prototype silicon detector system for space cosmic-ray charge measurement

A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC （VA140） from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.     

Improved Z^1/3 Law of Nuclear Charge Radius

An improved Z^1/3 law of nuclear charge radius is presented. The comparison between the calculated and experimental nuclear charge radii now available shows that this new formula is better than the other conventional formulae.     

H2^＋-Like Impurities Confined by Spherical Quantum Dots： a Candidate for Charge Qubits

We have calculated the electron energy of the ground and lower excited states for H2^＋-like impurity states confined in finite spherical quantum dots in GaAs. Based on the characteristics of energy levels, we have proposed a scheme for realizing charge qubit composed by the the ground and the first excited states of this confined double donor system for the first time. In the proposed scheme the charge qubit is coded in terms of the located electronic states.     

横向表面放电光泵浦源特性研究

 介绍了一种用以泵浦XeF(C-A)激光的横向表面放电辐射源,比较详细地研究了这种泵浦源的放电击穿特性、放电电流与充电电压及不同气体介质的关系、表面放电均匀性以及不同气体成分对表面放电辐射特性的影响。得到了放电击穿时间、放电峰值电流随充电电压、不同气体介质变化的曲线;分析了提高放电均匀性的途径,在电极长50cm、间距6cm、充电电压25kV条件下获得了均匀放电。获得了各种实验条件下放电辐射的光谱曲线;通过对辐射光谱的分析,研究了有利于光解离XeF₂的最佳实验条件,当p_Ar:p_N2=1:1时,放电在远紫外波段产生的辐射最强。