缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C60异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39V分别提高到0.58V、0.55V,转换效率从0.36%提高到0.44%,短路电流从1.92mA/cm2分别降低到1.77mA/cm2、1.81mA/cm2,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10nm时,器件短路电流密度减少到0.35mA/cm2.开路电压随着厚度的增加逐渐增加,从1nm时的0.43V增加10nm时0.63V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

一种印刷型薄膜太阳能电池p-n结调制技术

能带值为0.5~0.85 eV材料的稀缺是多结太阳能电池面临的一个主要挑战,本文使用非真空的机械化学法合成了能带值为0.83 eV的Cu₂SnS₃化合物,使用印刷技术将其制备成吸收层薄膜,并采用superstrate太阳能电池结构(Mo/Cu₂SnS₃/In₂S₃/TiO₂/FTO glass)对其光伏特性进行了研究.实验表明所制备的太阳能电池短路电流密度、开路电压、填充因子和转换效率分别为12.38 mA/cm²、320 mV、0.28和1.10%.此外,为更好地满足多结太阳能电池对电流匹配的需求,本文对所制备太阳能电池的Cu₂SnS₃/In₂S₃ p-n结进行了分析.通过在p-n结界面植入一层薄的疏松缓冲层,使调制后的太阳能电池短路电流密度从最初的12.38 mA/cm²增加到了23.15 mA/cm²,相应太阳能电池转换效率从1.1%增加到了1.92%.该p-n调制技术对印刷型薄膜太阳能电池具有重要借鉴意义.     

Organic Photovoltaic Cells with Improved Performance Using Bathophenanthroline as a Buffer Layer

采用Bphen作为缓冲层,研究Bphen处在电子受体材料C₆₀和阴极Ag之间对有机薄膜光伏电池(OPV)性能的影响．通过引入2.5nm厚的Bphen,在100 mW/cm²光照下,CuPc/C₆₀结构的器件效率从0.87%提高到2.25%． 对光生电流-电压的分析表明,Bphen缓冲层可以有效的提高电子从C₆₀层向Ag阴极的传输能力和平衡器件中载流子的传输能力．系统研究了Bphen厚度对OPV器件性能的影响,发现随着Bphen厚度的增加,电导率的降低是限制器件性能的主要原因．此外,采用紫外-可见光分光光度计测试了器件的吸收光谱,发现Bphen缓冲层可以增强CuPc/C₆₀的光吸收能力．     

n-ZnO:Al/i-ZnO/n-CdS/p-Cu2ZnSnS4太阳能电池光伏特性的分析

具有高光吸收系数的半导体Cu₂ZnSnS₄ (CZTS)薄膜是一种新型太阳能电池材料. 本文对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS结构的CZTS薄膜太阳能电池进行分析, 讨论CZTS薄膜的掺杂浓度、厚度、缺陷态和CdS薄膜的掺杂浓度、 厚度对太阳能电池转换效率的影响以及太阳能电池的温度特性. 分析表明, CZTS薄膜作为太阳能电池的主要光吸收层, CZTS薄膜的掺杂浓度和厚度的取值对太阳能电池的转换效率有显著影响, CZTS薄膜结构缺陷态的存在会导致太阳能电池性能的下降. CdS缓冲层的掺杂浓度、厚度对太阳能电池光伏特性的影响较小. 经结构参数优化得到的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS薄膜太阳能电池的最佳光 伏特性为开路电压1.127 V、短路电流密度27.39 mA/cm²、填充因子87.5%、 转换效率27.02%,转换效率温度系数为-0.14%/K.     

利用LiF/Al作为电极的有机电致发光器件

本文报道了利用LiF/Al作为负电极的有机电致发光器件,器件结构为ITO/TPD/Alq3/LiF/Al,LiF层的加入增强了电子注入,当其厚度为0.4nm时,器件的性能最好,与单层Al和Mg/Al电极的同类器件相比,此时器件的开启电压由Al电极时的4.3V和Mg/Al电极时的3.0V降低到了2.0V,器件的最大亮度分别由4000cd/m²、14000cd/m²提高到19600cd/m²,器件的发光效率也分别增加了5倍和2倍,达到2.66lm/W.     

CuO薄膜的制备及其光伏特性

通过反应磁控溅射在n型硅和玻璃衬底上制备了p型CuO薄膜.使用X射线衍射仪和紫外-可见光-近红外光度计研究了p型CuO薄膜的结构和光学特性,得出其平均晶粒尺寸和光学带隙分别为8 nm和1.36 eV.通过研究其电压-电流关系确定了在p型CuO薄膜和n型硅衬底之间形成了p-n结.在AM 1.5光照条件下p-CuO/n-Si电池的开路电压为0.33 V,短路电流密度为6.27 mA/cm², 填充因数和能量转化效率分别为0.2和0.41%.     

4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺掺杂MoOx作为空穴传输层对有机太阳电池性能的影响

通过采用4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺 (m-MTDATA)掺入MoO_x作为器件的空穴传输层来提高酞菁铜(CuPc)/C₆₀小分子 有机太阳电池的效率. 采用真空蒸镀的方法制备了一系列器件, 其中结构为铟锡氧化物 (ITO)/m-MTDATA:MoO_x(3:1)(30 nm)/CuPc(20 nm)/C₆₀(40 nm)/4,7-二苯 基-1,10-菲罗啉 (Bphen)(8 nm)/LiF(0.8 nm)/Al(100 nm)的器件, 在AM1.5 (100 mW/cm²)模拟太阳光的照射条件下, 开路电压V_oc=0.40 V, 短路电流J_sc=6.59 mA/cm², 填充因子为0.55, 光电转换效率达1.46%, 比没有空穴传输层的器件ITO/CuPc(20 nm)/C₆₀(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm) 光电转换效率提高了38%. 研究表明, 加入m-MTDATA:MoO_x(3:1)(30 nm)空穴传输层减小了有机层和ITO电极之间的接触电阻, 从而减小了整个器件的串联电阻, 提高了器件的光电转换效率.     

GaInP2/GaAs/Ge叠层太阳电池材料的低压MOCVD外延生长

本文采用自制的LP-MOCVD设备,外延生长出GaInP₂/GaAs/Ge叠层太阳电池结构片,对电池材料进行了X射线衍射测试分析.另外,采用二次离子质谱仪测试了电池结构的剖面曲线.用此材料做出的叠层太阳电池,AMO条件下光电转换效率η=13.6%,开路电压V_oc=2230mV,短路电流密度J_sc=12.6mA/cm².     

Al2O3增强的Co2-C98/Al2O3/Si异质结的光伏效应

随着能源危机的加剧,太阳能电池作为开发和利用太阳能的一种普遍形式, 日益受到世界各国的重视.随着太阳能电池向着高效率、薄膜化、无毒性和原材料丰富的方向发展, 单纯的硅系太阳能电池已经无法达到这样的要求,因此新的材料和工艺的开发利用迫在眉睫. 本文研究了碳材料在硅异质节上实现光伏效应的改善及其可能在太阳能电池上的应用. 采用脉冲激光沉积方法制备的Co₂-C₉₈/Al₂O₃/Si异质结构在标准日光照射 (AM1.5, 100 mW/cm²)条件下,可获得0.447 V的开路电压和18.75 mA/cm²的电流密度, 转换效率可达3.27%.通过电容电压特性和暗条件下的电输运性能测量, 证明了氧化铝层的引入不但对单晶硅的表面起到了物理钝化作用,减小了反向漏电流, 使异质结界面缺陷、界面能级和复合中心减少,还起到了场效应钝化作用, 增加了异质结界面的势垒高度,增加了开路电压,使异质结的光伏效应显著增强.     

基于氧化铟锡的无结低电压薄膜晶体管

在室温下制备了基于氧化铟锡(ITO)的底栅结构无结薄膜晶体管. 源漏电极和沟道层都是同样的ITO薄膜材料,没有形成传统的源极结和漏极结, 因而极大的简化了制备流程,降低了工艺成本.使用具有大电容的双电荷层SiO₂作为栅介质, 发现当ITO沟道层的厚度降到约20 nm时, 器件的栅极电压可以很好的调控源漏电流. 这些无结薄膜晶体管具有良好的器件性能: 低工作电压(1.5 V), 小亚阈值摆幅(0.13 V/dec)、 高迁移率(21.56 cm²/V·s)和大开关电流比(1.3× 10⁶). 这些器件即使直接在大气环境中放置4个月, 器件性能也没有明显恶化:亚阈值摆幅保持为0.13 V/dec,迁移率略微下降至18.99 cm²/V·s,开关电流比依然大于10⁶.这种工作电压低、工艺简单、 性能稳定的无结低电压薄膜晶体管非常有希望应用于低能耗便携式电子产品以及新型传感器领域.     

0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers

Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic(TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition(MOCVD).Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global(AM 1.5 G).     

Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1?0?0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)–voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm^?2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.     

Preparation and photovoltaic property of a new hybrid nanocrystalline SnO2/Polypyrrole p–n heterojunction

Hybrid photovoltaic structures based on transparent conductive SnO₂ and electrically conductive polypyrrole (PPy) were prepared. Nanocrystalline SnO₂ is considered an n-type barrier and window layer on p-type PPy layer in cell structures. The surface morphology and thickness of the layers were studied using scanning electron microscopy. The optical absorbance data showed an increase of absorbance in contrast with PPy and SnO₂. There was a red shift in absorbance wavelengths and a decrease in band gaps for the prepared PV structures. To investigate the electrical properties of the obtained structures, current-voltage characteristic was measured. The best structure showed an open-circuit voltage of 0.170?V, a short-circuit current density of 0.017?mA/cm², a fill factor of 0.36 and power conversion efficiency of 0.076.     

由窄带隙芴基共聚物制备的有效光伏电池

对基于9, 9-二辛基取代芴与4, 7-二硒吩-2,1,3-苯并噻二唑(SeBT)的共聚物(PFSeBT)的光伏电池，着重研究了阴极与共混比例对器件性能的影响，研究表明，当共混比例为PFSeBT: PCBM=1:2、并且采用LiF/Al做阴极时，器件的性能最优：开路电压1.00 V，为短路电流密度为4.42 mA/cm2，能量转换效率为1.67% (AM1.5，100 mW/cm2)，短路电流密度与入射光强间存在幂指数关系，幂指数为0.887，所有器件的光敏响应延均展至680 nm以上。上述研究结果表明，PFSeBT是一种非常有希望的聚合物光伏电池电子给体相材料。     

Electrochemically deposited poly(3-methylthiophene) performance in single layer photovoltaic devices

Photovoltaic devices based on electrochemically synthesized poly(3-methylthiophene) PMeT were constructed and characterized. The charge mobility for positive carriers of this polymer is quite high, 4 x 10^-4 cm²/Vs, being attractive for optoelectronic devices. In single layer photovoltaic devices with PMeT active layer electrochemically deposited onto indium-tin oxide substrate with aluminum as top electrode we have obtained short-circuit current density of 0.31 A/m², open-circuit voltage of 1 V and power conversion efficiency of 0.14% at 100 W/m² white light irradiance.Received: 17 October 2003PACS: 73.50.Pz Photoconduction and photovoltaic effects - 73.61.Ph Polymers; organic compounds - 73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths - 73.40.Sx Metal-semiconductor-metal structures     

Influence of morphology of PCDTBT:PC71BM on the performance of solar cells

Because of the restriction of low energy difference between the highest occupied molecular orbital of P3HT and the lowest unoccupied molecular orbital of PCBM, the obtained power conversion efficiency of P3HT:PCBM solar cells is merely half the ideal value. In this paper, we have fabricated bulk heterojunction solar cells based on PCDTBT and PC71BM (structure: ITO/PEDOT:PSS/PCDTBT:PC71BM/LiF (0.8 nm)/Al (80 nm)). In order to optimize the performance of the cells, the weight ratio of PCDTBT to PC71BM, the thickness of the active layer and thermal annealing are investigated. When the weight ratio of PCDTBT to PC71BM is 1:2 and the thickness of the active layer is 73 nm, a short circuit current density of 10.36 mA/cm², an open-circuit voltage of 0.91 V, a fill factor of 55.06 % and a power conversion efficiency of 5.19 % can be achieved. Moreover, we probe the influence of annealing temperature on the performance of organic solar cells, and find that the thermal treatment methodology (apart from the removal of trapped casting solvent) is of limited benefit.     

Synthesis of self-light-scattering wrinkle structured ZnO photoanode by sol–gel method for dye-sensitized solar cells

A special morphological zinc oxide (ZnO) photoanode for dye-sensitized solar cell was fabricated by simple sol–gel drop casting technique. This film shows a wrinkled structure resembling the roots of banyan tree, which acts as an effective self scattering layer for harvesting more visible light and offers an easy transport path for photo-injected electrons. These ZnO electrode of low thickness (~5 μm) gained an enhanced short-circuit current density of 6.15 mA/cm², open-circuit voltage of 0.67 V, fill factor of 0.47 and overall conversion efficiency of 1.97 % under 1 sun illumination. This shows a high conversion efficiency and a superior performance than that of ZnO nanoparticle-based photoanode (η ~ 1.13 %) of high thickness (~8 μm).     

Photovoltaic and Electroluminescence Bifunctional Devices with Starburst Amine and Rare-Earth-Complexes

We fabricate the organic photovoltaic （PV） devices, in which 4,4＇,4＂-tris-（2-methylphenylphenylamino）triphenylamine （m-MTDATA） and rare earth （RE） （dibenzoylmethanato）a（bathohenanthroline） （RE（DBM）abath） （RE = Nd or Pr） are used as electron donor and acceptor, and investigate their PV properties. The PV diode fabricated in the optimum processing conditions shows the open-circuit voltage of 1.91 V, short-circuit current of 0.1 mA/cm^2, fill factor of 0.38, and the overall power conversion efficiency of 1.9% when it is irradiated under UV light （4 m W/cm^2）. The photocurrent density exhibits an increase of 20% at least when a very thin LiF layer is inserted between the RE-complexes and the A1 cathode. A strong electroluminescence from the interface is also observed and the maximum luminance of a yellow emission resulted from the exciplex is 580 cd/m^2 at 17 V bias.     

Preheated solvent exposure on P3HT:PCBM thin film: A facile strategy to enhance performance in bulk heterojunction photovoltaic cells

In this study, we explored the ability of a preheated solvent (methanol) to induce characteristic changes at the organic active layer/metal interface, thereby improving the performance of fabricated organic photovoltaic (OPV) cells composed of poly(3-hexylthiopene) (P3HT) and a [6,6]-phenyl-C₇₁-butyric acid methyl ester (PCBM) photoactive blend. Our results demonstrate that exposure to methanol (at room temperature, or preheated at 45 °C or 65 °C) improves the performance of the fabricated OPV cells. After preheated methanol exposure, the P3HT:PCBM thin films were tested for crystallinity, morphology, mobility, and photovoltaic characteristics. Our results revealed that use of the preheated solvent on the organic active layer significantly influences the micro/nano scale morphology and phase segregation of the P3HT:PCBM thin films, as well as the charge carrier mobility. It is hypothesized that the side chain ordering of P3HT and redistribution of PCBM could be results of the modified active layer. Consequently, OPV cells modified with the methanol preheated at 65 °C exhibited a power conversion efficiency (PCE) of 3.36%, with open-circuit voltage of 0.59 V, short-circuit current density of 13.83 mA/cm², and fill-factor of 0.41. In contrast, the unmodified P3HT:PCBM thin film (without methanol exposure) showed a PCE of only 2.13%.