缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

缓冲层提高有机聚合物光伏电池性能研究

在分析有机聚合物复合体光伏电池机理及等效电路模型基础上,研究了界面旋涂缓冲层对聚合物给体/受体复合体结构光伏器件性能的影响.制备了基于P3HT/PCBM的给体 受体复合体薄膜有机光伏电池,并分别在有机活性层和ITO基底之间以及有机活性层和电极之间插入TFB和F8BT缓冲层.实验证明：在ITO和活性层之间旋涂TFB作为阳极缓冲层,可增加有机聚合物光伏器件的短路电流,在活性层和电极之间插入F8BT作为阴极缓冲层,可增大光伏器件的开路电压,提高器件的转换效率.     

辐照强度及温度对双层异质结有机光伏器件性能的影响

制备了基于CuPc/C60双层异质结有机光伏器件,研究不同光辐照强度及温度对器件性能的影响.测试结果表明:辐照强度直接决定器件的短路电流大小,但对开路电压影响不大;器件的短路电流对温度依赖性不强,但随着温度的降低,器件的开路电压逐渐增大.结合实验数据从理论上解释了光辐照强度及温度与有机光伏器件短路电流密度和开路电压的关...     

基于聚多巴胺/氧化锌复合阴极缓冲层的倒置聚合物太阳能电池的研究

利用多巴胺氧化自聚合形成聚多巴胺(PDA)与ZnO结合形成PDA/ZnO复合阴极缓冲层,制备了以P3HT:PC_(61)BM为活性层的倒置结构聚合物太阳能电池,通过改变PDA的自聚合时间来分析复合阴极缓冲层对器件性能的影响.实验发现,随着PDA的自聚合时间的增加,聚合物太阳能电池的光电转换效率先增大后减小,当自聚合时间为10 min时,相应器件光伏性能达到最优值,其开路电压V_(OC)为0.66 V,短路电流密度J_(SC)为9.70 mA/cm~2,填充因子FF为68.06%,光电转换效率PCE为4.35%.器件性能改善的原因是由于PDA/ZnO复合阴极缓冲层减小了ZnO与ITO之间的接触电阻,同时PDA中存在大量的氨基有利于倒置太阳能电池阴极对电子的收集.     

由窄带隙芴基共聚物制备的有效光伏电池

对基于9, 9-二辛基取代芴与4, 7-二硒吩-2,1,3-苯并噻二唑(SeBT)的共聚物(PFSeBT)的光伏电池，着重研究了阴极与共混比例对器件性能的影响，研究表明，当共混比例为PFSeBT: PCBM=1:2、并且采用LiF/Al做阴极时，器件的性能最优：开路电压1.00 V，为短路电流密度为4.42 mA/cm2，能量转换效率为1.67% (AM1.5，100 mW/cm2)，短路电流密度与入射光强间存在幂指数关系，幂指数为0.887，所有器件的光敏响应延均展至680 nm以上。上述研究结果表明，PFSeBT是一种非常有希望的聚合物光伏电池电子给体相材料。     

MoO3为缓冲层的高效非掺杂蓝色有机发光二极管

以典型蓝色发光材料-联苯乙烯衍生物(4,4’-bis(2,2’-diphenylvinyl) -1,1’-biphenyl,DPVBi)为发光层,采用MoO3为阳极缓冲层制备了结构简单的非掺杂型蓝色有机电致发光器件.在电流密度为20 mA/cm2、MoO3缓冲层厚度为0.5 nm对器件效率约为无缓冲层器件效率的18倍,...     

NPB阳极缓冲层对反型结构聚合物太阳能电池性能的影响

制备了给体材料为poly(3-hexylthiophene)(P3HT),受体材料为[6,6]-phenyl-C60-butyric acid methyl ester(PCBM),器件结构为ITO/ZnO/P3HT:PCBM/NPB(0,1,5,10,25 nm)/Ag的反型体异质结聚合物太阳能电池.不同厚度的N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine(NPB)阳极缓冲层被用来改善器件性能,研究了NPB阳极缓冲层对器件特性的影响.研究发现,1 nm厚的NPB改善了器件的载流子收集效率,增加了器件的短路电流与开路电压.当NPB缓冲层的厚度达到25 nm时,过厚的NPB导致串联电阻增加,使得器件特性大幅下降.通过电容-电压测试,进一步研究了不同厚度NPB对器件载流子注入与收集的影响,1 nm厚的NPB修饰并没有改善器件的载流子注入但是增加了器件对光生载流子的收集效率,过厚的NPB使得自由载流子的复合占据主导.适合厚度的NPB可以作为一种阳极缓冲层材料应用于聚合物太阳能电池提高器件特性.     

ZnS作为空穴缓冲层的新型有机发光二极管

采用磁控溅射方法在ITO表面沉积了不同厚度的ZnS超薄膜作为有机发光二极管(OLEDs)的缓冲层,使典型结构(ITO/TPD/Alq3/Al)的OLEDs的发光性能得到改善。ZnS缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为5nm时,器件电流密度提高了近2倍,亮度提高了2倍;当ZnS缓冲层厚度为10nm时,器件发光的电流效率提高18%,器件的性能得到改善。宽禁带的ZnS缓冲层对空穴从阳极到有机功能层的注入有阻碍作用,促进器件载流子平衡,提高了器件发光效率,改善了器件性能。     

TCTA对红绿磷光有机电致发光器件发光层激子的调控作用

制备了结构为ITO/MoO3(50 nm)/NPB(40 nm)/TCTA(10 nm)/CBP:14%GIr1(30 nm)/TCTA(x)/CBP:2%R-4B(10 nm)/BCP(10 nm)/Alq3(40 nm)/LiF(1 nm)/Al(100 nm)的红绿磷光有机电致发光器件,GIr1和R-4B分别为红、绿磷光染料。通过在红绿间插入较薄间隔层TCTA的方法,调节载流子、激子在红绿发光层中的分布,并结合TCTA和BCP对发光层内载流子和激子的有效阻挡作用,研究了载流子调控层TCTA在不同厚度下对器件发光性能的影响。结果表明,TCTA为1 nm时,器件的发光性能得到了很好的提升。电压为6 V时,TCTA为1 nm器件的电流密度、亮度、最大电流效率分别为0.509 mA/cm2、69.91 cd/m2和13.72 cd/A,而TCTA为0 nm器件的电流密度、亮度、最大电流效率分别为1.848 mA/cm2、215.7 cd/m2和11.67 cd/A。     

DPVBi为激子阻挡层的亚单层有机发光器件的制备与光电性能研究

结合亚单层的有机发光技术,制备了一种多层有机电致发光器件,其结构为ITO/m-MTDATA (50nm)/ C545T (0.05nm) /DPVBi (d nm)/DCM2(0.05nm)/ Alq (60nm) /LiF(1nm) /Al.荧光材料C545T和DCM2以亚单层的方式插入DPVBi前后,通过改变DPVBi的厚度,观察器件性能的变化,当DPVBi为4 nm时,器件在4V电压下最大发光效率是4.19 cd/A,在13 V电压下最大亮度是17050 cd/m2.分析对比了四种不同厚度器件的电流密度-电压曲线、亮度-电压曲线、电致发光光谱图和色坐标,发现选择合适厚度的激子阻挡层,可以得到效率较高的器件.激子阻挡层一般选择载流子传输能力较差,HOMO能级较低的材料.所得结果对有机发光器件尤其是采用亚单层有机白光器件的设计和制作有一定的指导作用.     

Preheated solvent exposure on P3HT:PCBM thin film: A facile strategy to enhance performance in bulk heterojunction photovoltaic cells

In this study, we explored the ability of a preheated solvent (methanol) to induce characteristic changes at the organic active layer/metal interface, thereby improving the performance of fabricated organic photovoltaic (OPV) cells composed of poly(3-hexylthiopene) (P3HT) and a [6,6]-phenyl-C₇₁-butyric acid methyl ester (PCBM) photoactive blend. Our results demonstrate that exposure to methanol (at room temperature, or preheated at 45 °C or 65 °C) improves the performance of the fabricated OPV cells. After preheated methanol exposure, the P3HT:PCBM thin films were tested for crystallinity, morphology, mobility, and photovoltaic characteristics. Our results revealed that use of the preheated solvent on the organic active layer significantly influences the micro/nano scale morphology and phase segregation of the P3HT:PCBM thin films, as well as the charge carrier mobility. It is hypothesized that the side chain ordering of P3HT and redistribution of PCBM could be results of the modified active layer. Consequently, OPV cells modified with the methanol preheated at 65 °C exhibited a power conversion efficiency (PCE) of 3.36%, with open-circuit voltage of 0.59 V, short-circuit current density of 13.83 mA/cm², and fill-factor of 0.41. In contrast, the unmodified P3HT:PCBM thin film (without methanol exposure) showed a PCE of only 2.13%.     

梯度掺杂体异质结对有机太阳能电池光电转换效率的影响

基于传统的体异质结有机太阳能电池结构, 对结构中的混合层改用梯度掺杂的方法, 在AM1.5, 100 mW/cm²光照下, 使得器件的短路电流由原来的7.72 mA/cm²提高到了9.18 mA/cm², 相应的光电转换效率提高了25%. 器件性能的提升归因于梯度掺杂体系的引入使得体异质结混合层中同一材料分子之间形成了较好的连续网络结构, 降低了器件的串联电阻, 提高了电极对载流子的收集效率, 从而提高了器件的光电转换效率. 关键词： 有机太阳能电池 体异质结 梯度掺杂     

Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1?0?0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)–voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm^?2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.     

Preparation and photovoltaic property of a new hybrid nanocrystalline SnO2/Polypyrrole p–n heterojunction

Hybrid photovoltaic structures based on transparent conductive SnO₂ and electrically conductive polypyrrole (PPy) were prepared. Nanocrystalline SnO₂ is considered an n-type barrier and window layer on p-type PPy layer in cell structures. The surface morphology and thickness of the layers were studied using scanning electron microscopy. The optical absorbance data showed an increase of absorbance in contrast with PPy and SnO₂. There was a red shift in absorbance wavelengths and a decrease in band gaps for the prepared PV structures. To investigate the electrical properties of the obtained structures, current-voltage characteristic was measured. The best structure showed an open-circuit voltage of 0.170?V, a short-circuit current density of 0.017?mA/cm², a fill factor of 0.36 and power conversion efficiency of 0.076.     

Enhancing The Efficiency of White Organic Light-emitting Diode Using Energy Recyclable Photovoltaic Cells

We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices (WOLED) and an organic photovoltaic(OPV) cell. The device is called a PVOLED. It has a glass/ITO/CuPc/m-MTDATA∶V2O5/NPB/CBP∶FIrpic∶DCJTB/BPhen/LiF/Al/P3HT∶PCBM/V2O5/Al structure. The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd/m2, when the conversion efficiency of OPV is 2.3%. We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED. High efficiency (18.3 cd/A) and high contrast ratio (9.3) were obtained at the device operated at 2 500 cd/m2 under an ambient illumination of 24 000 lx. Reasonable white light emission with Commission Internationale De L'Eclairage (CIE) color coordinates of (0.32,0.44) at 20 mA/cm2 and slight color shift occurred in spite of a high current density of 50 mA/cm2. The proposed PVOLED is highly promising for use in outdoors display applications.     

Influence of morphology of PCDTBT:PC71BM on the performance of solar cells

Because of the restriction of low energy difference between the highest occupied molecular orbital of P3HT and the lowest unoccupied molecular orbital of PCBM, the obtained power conversion efficiency of P3HT:PCBM solar cells is merely half the ideal value. In this paper, we have fabricated bulk heterojunction solar cells based on PCDTBT and PC71BM (structure: ITO/PEDOT:PSS/PCDTBT:PC71BM/LiF (0.8 nm)/Al (80 nm)). In order to optimize the performance of the cells, the weight ratio of PCDTBT to PC71BM, the thickness of the active layer and thermal annealing are investigated. When the weight ratio of PCDTBT to PC71BM is 1:2 and the thickness of the active layer is 73 nm, a short circuit current density of 10.36 mA/cm², an open-circuit voltage of 0.91 V, a fill factor of 55.06 % and a power conversion efficiency of 5.19 % can be achieved. Moreover, we probe the influence of annealing temperature on the performance of organic solar cells, and find that the thermal treatment methodology (apart from the removal of trapped casting solvent) is of limited benefit.     

0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers

Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic(TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition(MOCVD).Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global(AM 1.5 G).     

有机EL器件MEH-PPV/Alq3的光伏特性

制备了ITO/MEH-PPV/Alq3/LiF/Al光伏(PV)器件. MEH-PPV和Alq3分别为电子受体和给体. 光谱响应曲线主要和Alq3的吸收光谱相匹配. 在功率为0.5 mW·cm2的紫外氙灯照射下电池的短路电流为2.4 μA·cm-2, 开路电压为2.6 V, Fill因子为0.71, 电池的能量转换效率达到0.9%. 在直流电的驱动下, 器件具有电致发光的特性并且发出明亮的桔红色光, 在15 V的直流电压驱动下, 最大亮度达到了1 000 cd·cm-2.