Electromagnetic Transition Strengths and New Insight into the Chirality in ^106Ag

Excited states in ^106Ag are populated through the heavy-ion fusion evaporation reaction ^100Mo（ll B,5n）^106Ag at a beam energy of 60MeV. Lifetimes are measured for transitions of the two negative-parity rotational bands in the nucleus ^106Ag. The reduced transition probabilities show a great difference between the two bands. The staggering of the B（M1） and B（M1）/B（E2） values with spin are not observed. The bands are identified to be built on two distinct quasiparticle configurations. These results are contrary to an earlier suggestion that the pair of bands in ^106Ag are chiral doublet bands.     

Pits and adatoms at the interface of 1-ML C84/Ag （111）

We prepare a well-defined C84 monolayer on the surface of Ag （111） and study the geometric structure by scanning tunneling microscopy （STM）. The C84 molecules form a nearly close-packed incommensurate R30° lattice. The lattice is long-distance ordered with numerous local disorders. The monolayer exhibits complex bright/dim contrast; the largest height difference between the molecules can be greater than 0.4 nm. Annealing the monolayer at 380 ℃ can desorb part of the molecules, but more than sixty percent molecules stay on the Ag （111） surface even after the sample has been annealed at 650 ℃. Our analyses reveal that the 7-atom pits form beneath many molecules. Some other molecules sit at the 1-atom pits. Ag adatoms （those removed substrate atoms, accompanying the pit formation） play a very important role in this system. The adatoms can either stabilize or destabilize the monolayer, depending on the distribution manner of the adatoms at the interface. The distribution manner is determined by the co-play of the following factors： the dimension of the interstitial regions of the C84 overlayer, the number of the adatoms, and the long-distance migration of part adatoms.     

Energy band structure in optical of spin-1 condensates lattices

The energy band structure of spin-1 condensates with repulsive spimindependent and either ferromagnetic or antiferromagnetic spin-dependent interactions in one-dimensional （1D） periodic optical lattices is discussed. Within the two-mode approximation, Bloch bands of spin-1 condensates are presented. The results show that the Bloch bands exhibit a complex structure as the atom density of mF = 0 hyperfine state increases： bands splitting, reversion, intersection and loop structure are excited subsequently. The complex band structure should be related to the tunneling and spin-mixing dynamics.     

Electronic,optical properties,surface energies and work functions of Ag8SnS6: First-principles method

Ternary metal chalcogenide semiconductor Ag8Sn S6,which is an efficient photocatalyst under visible light radiation,is studied by plane-wave pseudopotential density functional theory.After geometry optimization,the electronic and optical properties are studied.A scissor operator value of 0.81 e V is introduced to overcome the underestimation of the calculation band gaps.The contribution of different bands is analyzed by virtue of total and partial density of states.Furthermore,in order to understand the optical properties of Ag8Sn S6,the dielectric function,absorption coefficient,and refractive index are also performed in the energy range from 0 to 11 e V.The absorption spectrum indicates that Ag8Sn S6has a good absorbency in visible light area.Surface energies and work functions of(411),(4 13),(21 1),and(112)orientations have been calculated.These results reveal the reason for an outstanding photocatalytic activity of Ag8Sn S6.     

Characterization of Ag adsorption on TiC（001） substrate： an ab initio study

Ag adsorptions at 0.25-3 monolayer （ML） coverage on a perfect TIC（001） surface and at 0.25 ML coverage on C vacancy are separately investigated by using the pseudopotential-based density functional theory. The preferential adsorption sites and the adsorption-induced modifications of electronic structures of both the substrate and adsorbate are analysed. Through the analyses of adsorption energy, ideal work of separation, interface distance, projected local density of states, and the difference electron density, the characteristic evolution of the adatom-surface bonding as a function of the amount of deposited silver is studied. The nature of the Ag/TiC bonding changes as the coverage increases from 0.25 to 3 MLs. Unlike physisorption in an Ag/MgO system, polar covalent component contributes to the Ag/TiC interfacial adhesion in most cases, however, for the case of 1-3 ML coverage, an additional electrostatic interaction between the absorption layer and the substrate should be taken into account. The value of ideal work of separation, 1.55 J/m^2, for a 3-ML-thick adlayer accords well with other calculations. The calculations predict that Ag does not wet TIC（001） surface and prefers a three-dimensional growth mode in the absence of kinetic factor. This work reports on a clear site and coverage dependence of the measurable physical parameters, which would benefit the understanding of Ag/TiC（001） interface and the analysis of experimental data.     

High-Quality FeTe_(1-x)Se_x Monolayer Films on SrTiO_3(001) Substrates Grown by Molecular Beam Epitaxy

We report the growth process of FeTe_(1-x)Se_(0≤x≤≤1) monolayer films on SrTiO_3(STO) substrates through molecular beam epitaxy and discuss the possible ways to improve the film quality. By exploring the parameters of substrate treatment, growth control and post growth annealing, we successfully obtain a series of FeTe_(1-x)Se_x monolayer films. In the whole growth process, we find the significance of the temperature control through surface roughness monitored by the reflection high-energy electron diffraction and scanning tunneling microscopy. We obtain the best quality of FeSe monolayer films with the STO substrate treated at T = 900-950°C before growth,the FeSe deposited at T = 310°C during growth and annealed at T = 380°C after growth. For FeTe_(1-x)Se_x(x1), both the growth temperature and annealing temperature decrease to T = 260℃. According to the angleresolved photoemission spectroscopy measurements, the superconductivity of the FeTe_(1-x)Se_x film is robust and insensitive to Se concentration. All the above are instructive for further investigations of the superconductivity in FeTe_(1-x)Se_x films.     

Observation of a Flat Band in Silicene

Flat bands that exhibit weak band dispersion in crystals can host heavy fermions that are cru- cial to many strongly correlated phenomena, such as ferromagnetism and superconductivity. For topologically trivial flat bands, theories have proven the stability of the ferromagnetic ground state i.e., flat band ferromagnetism. In the presence of weak disorders, systems with flat bands are expected to exhibit unconventional Anderson localization due to the lifting of degeneracy. More interestingly, flat bands with nontrivial topology, i.e., topological flat bands, are expected to host a fractional quantum Hall effect at zero magnetic field. Hence, searching for topologically trivial/nontrivial flat bands （TFB） has been an interesting while challenging task so far.     

A theoretical study of the oxygen K-edge near-edge X-ray absorption fine structure of N20/Ir（110）

A multiple-scattering chtster method is employed to calculate the oxygen K-edge near-edge X-ray absorption fine structure of N20/Ir（110） and its monolayer. Two peaks and one weak resonance appear in both cases. The self- consistent field DV-Xa calculations of the peaks and resonance show that the physical origin of the pre-edge peak x is different from those of the main peak 1 and the other weak resonance al. This setup is intrinsic to the N20 monolayer, owing to the interaction between the neighbouring molecular chains in the monolayer and partly to the adsorbed atomic oxygen, according to both the theoretical and experimental data.     

A Study of Surfactant-Induced Growth of Ag on Ag （111）

A new growth model is introduced to describe surfactant-induced growth of Ag on Ag （111） with realistic physical parameters. In this model, the A-S exchange mechanism is considered for the first time. Using the Monte Carlo simulations, the influence of exchange mechanism, surface temperature T, the exchange barrier Eεx, and the coverage of surfactant θM on the growth mode and morphology during multilayer film growth of Ag/Ag （111） are studied in detail Both the referenced value of surfactant coverage and the method to obtain perfect layer-by-layer film in surfactantinduced Ag/Ag （111） system are provided. Our simulation results are consistent with many experimental observations for surfactant-induced growth of Ag on Ag （111）.     

Raman Spectra of the Calix[n]arene—C60 Complex

We have obtained the Raman spectra of the Calix[n]arene C60 complex of anti-conformation.Very different interactions between C60 and calix[n]arene (n=4,8) have been found from the vibratory spectroscopy,which are more complicated than those reported in previous works.It is interesting to find three low frequency modes,i.e.the spheroidal,torsional and E2 clearly shown at 39,130 and 208cm^-1,respectively.It is primarily interpreted as a relaxation effect of calix[8]arene framework for C60 where the intramolecular bridge between C60 and calix[8]arene are partly packed and two axes of c60([100] and [101]) are changed from the original configuration.The change of the vibratory environment of the carbon atom of C60 created some new modes.The Hg5 mode(at 1101cm^-1) and Hg2(at 431cm^-1) have been split and some modes (Ag2 and other six Hg modes) were hidden.     

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer （1.5 ML） and compare with that of electrons, using polarization-dependent time-resolved photoluminescence （TRPL） experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes （τ1h = 196± 17 ps） that is in the magnitude similar to electrons （t1e= 354 ± 32 ps） in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.     

Air Stability of Cs2CO3:Ag/Ag Cathode for Organic Light-Emitting Diodes

We report the superior stability of the composite Cs2CO3 ：Ag/Ag cathode structure, which can be used in efficient organic light-emitting diodes （OLEDs）. Devices with the Cs2CO3：Ag （1：10, 5nm）/Ag （95nm） cathode show a considerably improved lifetime compared with the control device with the Cs2CO3 （0.5 nm）/Ag （100 nm） cathode. The composite Cs2CO3 ：Ag/Ag film is proved to be stable in the atmosphere. X-ray diffraction （XRD） is applied to analyze the crystalline structure of the Cs2CO3：Ag film, and it is demonstrated that CsAg alloy is formed, leading to the improved stability of the thin film and the devices.     

Chemical Vapor Deposition Growth of Large-Area Monolayer MoS_2 and Fabrication of Relevant Back-Gated Transistor

A closed two-temperature-zone chemical vapor deposition(CVD) furnace was used to grow monolayer molybdenum disulfide(MoS_2) by optimizing the temperature and thus the evaporation volume of the Mo precursor. The experimental results show that the Mo precursor temperature has a large effect on the size and shape transformation of the monolayer MoS_2, and at a lower temperature of 760°C, the size of the triangular MoS_2 increases with the elevating temperature, while at a higher temperature of 760°C, the shape starts to change from a triangle to a truncated triangle. A large-area triangular monolayer MoS_2 with a side length of 145 °m is achieved at 760°C.Further, the as-grown monolayer MoS_2 is used to fabricate back-gated transistors by means of electron beam lithography to evaluate the electrical properties of MoS_2 thin films. The MoS_2 transistors with monolayer MoS_2 grown at 760°C exhibit a high on/off current ratio of 10~6, a mobility of 1.92 cm~2/Vs and a subthreshold swing of 194.6 mV/dec, demonstrating the feasible approach of CVD deposition of monolayer MoS_2 and the fabrication of transistors on it.     

Effects of shape and dopant on structural,optical absorption,Raman, and vibrational properties of silver and copper quantum clusters: A density functional theory study

We investigate the effects of shape and single-atom doping on the structural, optical absorption, Raman, and vibra- tional properties of Ag13, Ag12CUl, CUl3, and Cul2Agl clusters by using the （time-dependent） density functional the- ory. The results show that the most stable structures are cuboctahedron （COh） for Ag13 and icosahedron （Ih） for CUl3, Agl2CUlcore, and Cul2Aglsur. In the visible-near infrared optical absorption, the transitions consist of the interband and the intraband transitions. Moreover, red shifts are observed as follows： 1） clusters change from Agl2CUlcore to Ag13 to Ag12Culsur with the same motifs, 2） the shapes of pure Agl3 and Agl2CUlcore clusters change from COh to Ih to decahe- dron （Dh）, 3） the shape of Agl2CUlsur clusters changes from Ih to COh to Dh, and 4） the shapes of pure CU13 and Cu12Agl clusters change from Ih to Dh to COb. All of the Raman and vibrational spectra exhibit many significant vibrational modes related to the shapes and the compositions of the clusters. The ranges of vibrational spectra of Ag13, Agl2CUl or CU13, and Cu12Agl clusters become narrower and the vibrational intensities increase as the shape of the clusters changes from Ih to Dh to COh.     

Band Structures of the Nucleus 129Cs

High-spin states in ^129Cs are populated via the ^122Sn （^11B, 4n） reaction at beam energies of 55 and 60MeV. Two additional bands are placed in the level scheme and the previously known bands are extended to higher spins. The results are compared to the cranked shell model calculations and to the systematics of the adjacent Cs isotpoes. One of the new bands is interpreted as the 7-vibrational band built on the πh11/2 orbital. The possible configuration for another new band is discussed. Upbend caused by （Vh11/2）^2 alignment is observed both in the favored and unfavored sequences of the πh11/2 configuration. The band based on the πgτ/2 configuration at low spins forks around spin 17//2, and the two different S-bands are attributed to （Vh11/2）^2 and （πh11/2）^2 rotational alignments, respectively.     

Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system

Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C60 in the hot filament chemical vapour deposition (HFCVD) system.The process of nucleation and growth of diamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described.In order to increase the density of diamond nuclei on the wafers,it is not necessary to use negative bias.The UV-light pre-treatment is not beneficial for improving the diamond nucleation.The multi-layers of C60 molecules,but not a monolayer,can increase the density of diamond nuclei in the presence of H atoms.     

Comparative study of adsorption characteristics of Cs on the GaN （0001） and GaN （0001） surfaces

The adsorption characteristics of Cs on GaN （0001） and GaN （0001） surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN （0001） surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN （000i） surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.     

Multi-Band Absorption Properties and Near-Field Enhancement in Mid-Infrared Based on the Interference Theory

We numerically study the multi-band absorption properties and near-field enhancement inside the microcavity based on the interference theory. The compact single unit cell consists of a gold square patch placed on the top of a metallic ground plane, separated by a dielectric layer. At the normal incidence of electromagnetic radiation, four bands of a maximum absorption of 98% are accomplished by appropriate sizes of the square patch. Furthermore, we demonstrate that the four bands, which are corresponding to the fundamental mode and higher modes of the standing wave, can be readily tuned in the mid-infrared region and associated with the near-field enhancement in the cuboid mierocavity. Since chemical and biological fingerprints of the common functional groups can be found in the mid-infrared region, we may readily tune the multi-bands of interest in the mid-infrared range and identify the molecular stretches of groups. Moreover, the proposed structure is insensitive to the polarization of the incident wave due to the complete rotational symmetry （C4 symmetry）. The unique properties of the optical metamaterial indicate that this approach is a promising strategy for surface-enhanced infrared absorption spectroscopy and for the tracking of characteristic molecular vibrational modes