Composition-Controlled Low Field Magnetostriction of TbFe Amorphous Films

Amorphous TbFe films are fabricated by dc magnetron sputtering, and their magnetostrictions at low field are examined over a wide range of terbium content （from 32at.% to 70at.%）. It is found that the terbium content plays an important role in the magnetic and magnetostrictive properties of TbFe films. TbFe film soft magnetic properties and low field magnetostriction can be efficiently improved by controlling the terbium at an optimum content. The magnetostriction at lower magnetic field is increased with the increase of terbium content up to 48.2at.%. After reaching the maximum value, further increase of terbium content would result in a great decrease of the low field magnetostriction. By contrast, at higher magnetic field, the magnetostriction is decreased monotonically with the increase of the terbium content.     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

THEORETICAL CALCULATION ON THE PAIR POTENTIALS BETWEEN LIGHT RARE-EARTH METALLIC ATOMS

In order to calculate the pair potentials between light rare-earth metallic atoms with double hexagonal close-packed (dhcp) crystal structure, a M?bius inversion transform formula for the dhcp structure is proposed. The pair potentials for the light rare-earth atoms are calculated by this formula. These pair potentials are fitted to the analytic Morse-type potential expressions.     

基于改进集的集值Ekeland变分原理

Ekeland变分原理在最优化理论及应用研究中具有十分重要的作用.利用非线性标量化函数及相应的非凸分离定理建立了基于改进集的集值Ekeland变分原理.新的Ekeland变分原理包含了一些经典的Ekeland变分原理作为其特例.     

嵌埋于沸石分子筛中的Fe_n团簇的磁性能研究

运用RKKY理论 ,推导了金属球形团簇间交换作用 ,并利用蒙特卡罗 (MC)方法模拟了嵌埋于沸石分子筛中的Fen 团簇体系的磁性能与团簇尺寸的关联效应。结果表明 :嵌埋式团簇体系的磁性能随团簇间距离呈震荡型 ,体系磁化强度随团簇分布密度及填充率的增大而增大 ,这对新型复合磁性材料的制备提供了参考。     

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor （MOSFET） when the ion strikes the channel. The main reason is that the polarization-induced charges （the polarization direction here is away from the silicon surface） bring a negative surface po- tential which will affect the distribution of carders and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.     

粘结NdFeB永磁体化学镀Ni-Cu-P防护层工艺过程研究

研究了粘结NdFeB永磁体化学镀Ni Cu P合金防护层的工艺过程。研究表明:粘结磁体经碱性去油、缓蚀酸洗、镀前隔离与活化处理后再进行化学镀Ni Cu P,可获得镀层光亮平整,结合力好,孔隙率为每平方厘米0.5个,腐蚀速率为0.07mg·cm-2·h-1的耐蚀性镀层,该镀层对磁体磁性能无不良影响。     

低温固相反应挤出PET/PC合金中的多重网络增韧结构

以聚对苯二甲酸乙二酯(PET)瓶片为主要原料, 加入聚碳酸酯(PC)、热塑性弹性体及扩链剂, 采用低温固相反应挤出制备了具有良好强度与韧性的新型合金. 在加工过程中产生PET相和PC相互穿的网络结构的同时, 反应性扩链剂在PET相中发生交联反应, 形成了次级网络结构. 由于这些网络结构的存在, 使合金材料的力学性能得到明显提高, 特别是缺口冲击性能有了明显的改善.     

纳米晶交换耦合稀土永磁体α－Fe／Nd_2Fe_(14)B的居里温度及磁性能随温度变化关系研究

从铁磁体材料原子中电子间静电交换相互作用出发,结合Ｈｅｉｓｅｎｂｅｒｇ铁磁性理论,从原子分子设计的角度,针对ＮｄＦｅＢ基稀土永磁材料的晶体结构及原子占位特征,提出了提高居里温度ＴＣ的三条途径,在此基础上,利用熔体快淬工艺合成了具有高ＴＣ和磁性能的高温度稳定性的纳米晶稀土永磁体材料,并对其微结构及磁性能分别进行了表征和振动样品磁强计（ＶＳＭ）的测试与讨论。