SiO2 Waveguide Resonator Used in an Integrated Optical Gyroscope

An integrated optical waveguide resonator based on a SiO2 waveguide is proposed, fabricated and tested. The method of designing the resonator is also presented. The optimal splitting ratio of the coupler is gained by simulating the relationship between the splitting ratio of the key coupler in the resonator and the resonator＇s finesse with resonance depth. The calculated fundamental detection limit of this integrated optical vcaveguide resonator is 1.6°/h. Finally, a micro-optical gyroscope system based on the integrated waveguide resonator is built, and the measured resonator＇s finesse F is close to 70 under fluctuating temperature. To the best of our knowledge, the present F is the best result to date. For the coupler splitting rate the experimental results have fixed errors with the simulation results caused by fabrication processes which can be easily eliminated, implying that the method of design is effective and applicable.     

A Laser-Diode End-Pumped Nd:YVO4 Slab Laser at 1342nm

A laser-diode end-pumped Nd：YVO4 slab laser with a fiat-concave stable cavity at 1342nm is demonstrated. Under the pumping power of 92 W, a cw laser of output 17.8 W is obtained with the slope efficiency of 25.6%.     

High Power Continuous-Wave and Acousto-Optic Q-Switched Nd：GdVO4 Laser Operated at 912 nm

We present a high power and efficient operation of the ^4F3/2 → ^4I9/2 transition in Nd：GdVO4 at 912nm. In the cw mode, the maximum output power of 8.6 W is achieved when the incident pump power is 40.3 W, leading to a slope efficiency of 33.3% and an optical-optical efficiency of 21.3%. To the best of our knowledge, this is the highest cw laser power at 912nm obtained with the conventional Nd：GdVO4 crystal. Pulsed operation of 912nm laser has also been realized by inserting a small aeousto-optie （A-O） Q-Switch inside the resonator. As a result, the minimal pulse width of 20ns and the average laser power 1.43 W at the repetition rate of lOkHz are obtained, corresponding to 7.1 kW peak power. We believe that this is the highest laser peak power at 912nm. Furthermore, duration of 65ns has also been acquired when the repetition rate is 100 kHz.     

Efficient Diode-Pumped Tm：YALO3 Laser with a Pump Recycling Scheme

By using a pump recycling configuration, the maximum power of 8.1 W in the wavelength range 1.935-1.938 μm is generated by a 5-ram long Tm：YAIOa （4 at.%） laser operating at 18℃ with a pump power of 24 W. The highest slope efficiency of 42% is attained, and the pump quantum efficiency is up to 100%. The Tm：YAlO3 laser is employed as a pumping source of singly-doped Ho（1%）：GdV04 laser operating at room temperature, in which continuous wave output power of greater than 0.2 W at 2.05/μm is achieved with a slope efficiency of 9%.     

A Single-Longitudinal-Mode Dual-Wavelength cw Tm,Ho:GdVO4 Microchip Laser

A liquid nitrogen cooled dual-wavelength Tm,Ho：GdVO4 microchip laser is reported. The output dual wavelengths axe at 2038.9nm and 2050.1 nm. At each wavelength, the laser has a single longitudinal mode. The threshold power is nearly 20mW and the slope efficiency is 18.7%. The single longitudinal mode output power reaches 98mW, and the ratio of power is about 60% （2038.9nm） and 40% （2050.1 nm）.     

A Bidirectional, Diode-Pumped, Passively Mode-Locked Nd：YVO4 Ring Laser with a Low-Temperature-Grown Semiconductor Saturable Absorber Mirror

We report the operation of a bidirectional picosecond pulsed ring Nd：YVO4 laser based on a low-temperaturegrown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 × 200 mW.     

Generation of Intense THz Pulsed Lasers Pumped Strongly by CO2 Pulsed Lasers

A theoretical method dealing with two intense laser fields interacting with a three-level molecular system is proposed. A discussion is presented on the properties of the solutions for time-independent and time-dependent absorption coefficients and gain coefficient on resonance for strong laser fields, based on analytic evaluation of the rate equations for a homogeneously broadened, three-level molecular system. The pump intensity range can be estimated according to the analytic expression of pump saturation intensity. The effects of pulse width, gas pressure and path length on the energy absorbed from pump light are studied theoretically. The results can be applied to the analysis of pulsed, optically pumped terahertz lasers.     

A Compact All-Solid-State 630-ps 9.43-kHz High Power Nd：YAG/Nd：YVO4 Hybrid Laser System

We present a simple and compact design for an all-solid-state laser amplifier system which can output 9.43-kHz 630-ps, 3.5-W pulse trains under 20 W absorbed pumping power. The excellent matching between the repetition of its seed source and the fluorescence lifetime of the amplifying medium makes it quiet efficient for the four-pass amplifier to be pumped in cw mode without need of any synchronization device between the oscillator and the amplifier. The entire setup just covers an area of 55 × 25 cm^2. The output average power fluctuation is less than ±1.5% within 10min and 3% within 6h.     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Comparison of Laser Performances of 5at.% Yb:Gd2xY2(1-x)SiO5 Crystals between Different Cutting Directions

We investigate the laser actions of 5at.% Yb:Gd_2xY_2(1-x)SiO₅ (Yb:GYSO; x=0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9,W. In contrast, the sample cut parallel reaches only 1.65W at 1044nm with a slope efficiency of 33.76% with absorbed pump power of 7.99W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68nm to 1084.82nm.     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Fabrication and Characterization of SmCo5/Fe65Co35 and SmCo5/Fe Composite Spring Exchange Magnets

SmCo5/Fe65Co35 and SmCo5/Fe spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates and 100-nm-thick Si3N4 membranes, respectively. The base pressure of sputtering chamber is kept below 10^-7 Tort, and Ar pressure is 3 to 8mTorr. The samples are characterized by an x-ray diffractometer, a superconducting quantum interference magnetometer, and high resolution magnetic soft x-ray microscopy. We obtain the complete exchange coupling and single phase behaviour of composite magnets. The （BH）max value achieved is 28.8 MGOe.     

Raman and X-Ray Investigation of Pyrope Garnet （Mg0.76Fe0.14Ca0.10）3Al2Si3O12 under High Pressure

The compressional behavlour of natural pyrope garnet is investigated by using angle-dlspersive synchrotron radiation x-ray diffraction and Raman spectroscopy in a diamond anvil cell at room temperature. The pressureinduced phase transition does not occur under given pressure. The equation of state of pyrope garnet is determined under pressure up to 25.3 GPa. The bulk modulus KTO is 199 GPa, with its first pressure derivative K′TO fixed to 4. The Raman spectra of pyrope garnet are studied. A new Raman peak nearly at 743 cm^-1 is observed in a bending vibration of the SiO4 tetrahedra frequency range at pressure of about 28 GPa. We suggest that the new Raman peak results from the lattice distortion of the SiO4 tetrahedra. All the Raman frequencies continuously increase with the increasing pressure. The average pressure derivative of the high frequency modes （650-1000 cm^-1） is larger than that of the low frequency （smaller than 650 cm^-1）. Based on these data, the mode Grǖneisen parameters for pyrope are obtained.     

Preparation and Luminescence Characteristics of Ca3Y2（BO3）4：Eu^3＋ Phosphor

Ca3Y2 （BO3）4：Eu^3＋ phosphor is synthesized by high temperature solid-state reaction method, and the Iuminescence characteristics are investigated. The emission spectrum exhibits two strong red emissions at 613 and 621 nm corresponding to the electric dipole ^5 Do- ^7F2 transition of Eu^3＋ under 365 nm excitation, the reason is that Eu^3＋ substituting for Y^3＋ occupies the non-centrosymmetric position in the crystal structure of Ca3 Y2 （BO3）4. The excitation spectrum for 613 nm indicates that the phosphor can be effectively excited by ultraviolet （UV） （254 nm, 365nm and 400nm） and blue （470nm） light. The effect of Eu^3＋ concentration on the emission intensity of Ca3 Y2 （BO3）4 ：Eu^3＋ phosphor is measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The CIE colour coordinates of Ca3Y2 （BO3）4：Eu^3＋ phosphor is （0.639, 0.357） at 15mol% Eu^3＋.     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier

A n atomic-layer-deposited Al2O3/HfO2/Al2O3 （A/H/A） tunnel barrier is in vestigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i.e., an increase by 9 V for ±12 V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1 V for 100 μs program/erase at a low voltage of ±7 V, which is due to fast charge injection rates, i.e., about 2.4× 10^16 cm^-2 s^-1 for electrons and 1.9× 1016 cm^-2 s^-1 for holes.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

High power diode-side-pumped rod Nd:GdVO4 laser

A compact high power diode-side-pumped Nd:GdVO₄ laser has been presented, which can generate an output power of 52 W at 1.063-μm for continuous-wave (CW) operation. The absorption characteristics of the Nd:GdVO₄ in different pump directions is measured, which were used to optimize the diode-side-pumped Nd:GdVO₄ laser head. The laser characteristics of both CW and Q-switched Nd:GdVO₄ and Nd:YAG in are compared and it was found that Nd:GdVO₄ may surpass Nd:YAG for high power laser application.     

Phase Transition and High Piezoactivity of Sr Doped Lead-Free （Na0.53K0.422Li0.048） （Nb0.89Sb0.06Wa0.05）O3 Ceramics

Lead-free piezoelectric ceramics （Na0.53K0.422Li0.048 ） （Nb0.89Sb0.06 Ta0.05 ）03 （NKLNST） ＋ x tool SrCO3 are prepared by conventional solid state sintering method. The specimens with pure perovskite structure show tetragonal phase at x 〈 0.01, and become pseudo-cubic phase at x 〉 0.02. A lattice parameter discontinuity is found in the specimens with 0.004 〈 x 〈 0.0075, along with a great improvement in piezoactivity. The 0.004 mol SrCO3 added NKLNST ceramics possesses outstanding performances of kp = 0.53, kt = 0.26, and d33=309 pC/N. Moreover, the Sr^2＋ modification inhibits the gra/n growth, decreases the Curie temperature, and induces a diffuse phase transition.     

Continuous-wave high-power multi-pass pumped thin-disc Nd:GdVO4 laser

A thin-disc Nd:GdVO₄ laser in multi-pass pumping scheme was developed. Continuous-wave output power of 13.9 W at 1.06 μm for an absorbed power at 808 nm of 22 W was demonstrated from a 250-μm thick, 0.5-at.% Nd:GdVO₄ in a 4-pass pumping; the slope efficiency in absorbed power was 0.65, or 0.47 in input power. Output performances were also investigated under diode laser pumping at 879 nm, directly into the emitting ⁴F_3/2 level: maximum power of 3.6 W was obtained at 6.2 W of absorbed power with 0.69 slope efficiency. Compared with pumping at 808 nm, into the highly absorbing ⁴F_5/2 level, improvements of laser parameter in absorbed power (increase of slope efficiency, decrease of threshold) were obtained, showing the advantages of the pumping into the emitting level. However, the laser performances expressed vs. the incident power were modest owing to the low absorption efficiency at 879 nm. Thus, increased number of passes of the medium would be necessary in order to match the performances in input power obtained under 808-nm pumping.