High-efficiency Nd:GdVO4 laser at 1341 nm under 880 nm diode laser pumping into the emitting level

Highly efficient 1341 nm continuous-wave laser under 880 nm diode laser pumping in Nd:GdVO₄ crystal is reported. Comparative results obtained by the traditional pumping at 808 nm were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power under 880 nm pumping was 34.9% higher and 12.6% lower than those of 808 nm pumping. A high slope efficiency of 49.1% was achieved under 880 nm pumping, with an optical-to-optical conversion efficiency of 41.7%.     

Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping

The continuous-wave high-efficiency laser emission of Nd:GdVO₄ at the second-harmonic of 456 nm obtained by intracavity frequency doubling with an BiB₃O₆(BiBO) nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. About 3.8 W at 456 nm with M² = 1.4 was obtained from a 5 mm-thick 0.4 at.% Nd:GdVO₄ laser medium and a 12 mm-long BiBO nonlinear crystal in a Z-type cavity for 13.9 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.274. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴F_5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

Improvement in the laser performances of an A-O Q-switched Nd:GdVO<Subscript>4</Subscript> laser by direct-diode pumping into the emitting level

The laser performances of an A-O Q-switched Nd:GdVO₄ laser are demonstrated under LD pumping at 808 and 879 nm, respectively. Results indicate that the pulse performances are improved markedly under 879-nm LD direct pumping. At a repetition rate of 100 kHz, a maximum average output power of 12.1 W, a pulse width of 20.3 ns, and a peak power of about 6 kW are reached under 879-nm pumping.     

Continuous-wave Ho:GdVO4 laser pumped by Tm-doped fiber laser with a fiber Bragg grating at room temperature

We reported the Ho:GdVO₄ laser pumped by Tm-doped laser with a fiber Bragg grating. 2.03 W continuous-wave Ho:GdVO₄ laser output power is obtained under 10.5 W incident pump power, with the optical-to-optical conversion efficiency and slope efficiency of 19.3% and 32.3%, respectively, at 7 °C. We can see that, the lower the temperature is, the better the laser output character is. The beam quality factor is M² ∼ 1.29 measured by the traveling knife-edge method.     

High-efficiency Nd:YVO4 laser emission under direct pumping at 880 nm

We report a high-efficiency Nd:YVO₄ laser pumped by an all-solid-state Q-switched Ti:Sapphire laser at 880 nm in this paper. Output power at 1064 nm with different-doped Nd:YVO₄ crystals of 0.4-, 1.0- and 3.0-at.% under the 880 nm pumping was measured, respectively. Comparative results obtained by the traditional pumping at 808 nm into the highly absorbing ⁴F_5/2 level were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power of the 1.0-at.% Nd:YVO₄ laser under the 880 nm pumping was 17.5% higher and 11.5% lower than those of 808 nm pumping. In a 4-mm-thick, 1.0-at.% Nd:YVO₄ crystal, a high slope efficiency of 75% was achieved under the 880 nm pumping, with an optical-to-optical conversion efficiency of 52.4%.     

High-efficiency direct-pumped Nd:YVO4-LBO laser operating at 671 nm

The continuous-wave high-efficiency laser emission from Nd:YVO₄ at the fundamental wavelength of 1342 nm and its 671 nm second harmonic obtained by intra-cavity frequency doubling in an LBO nonlinear crystal are investigated under pumping by diode laser at 880 nm (on the ⁴F_3/2→⁴I_13/2 transition). The end-pumped Nd:YVO₄ crystal yielded a continuous-wave output power of 9.6 W at 1342 nm for 18.9 W of absorbed pump power. The slope efficiency measured with respect to the absorbed pump power is 60%. An output of 5.5 W at 671 nm was obtained by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 29%. Comparative results obtained for the pump with a diode laser at 808 nm (on the ⁴F_5/2→⁴I_13/2 transition) are given in order to prove the advantages of the 880 nm wavelength pumping.     

Efficient continuous-wave 908 nm Nd:YLF laser emission under direct 880 nm pumping

The quasi-three-level 908-nm continuous-wave laser emission under direct diode laser pumping at 880 nm into emitting level ⁴ F _3/2 of Nd:YLF have been demonstrated. An end-pumped Nd:YLF crystal yielded 4.7 W of output power for 11.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 43.3%. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880-nm wavelength pumping.     

All-Solid-State Nd:YAG Laser Operating at 1064nm and 1319nm under 885nm Thermally Boosted Pumping

We report a high-effciency Nd：YAG laser operating at 1064 nm and 1319nm, respectively, thermally boosted pumped by an all-solid-state Q-switched Ti：sapphire laser at 885 nm. The maximum outputs of 825.4 m W and 459.4mW, at 1064nm and 1319nm respectively, are obtained in a 8-ram-thick 1.1 at.% Nd：YAG crystal with 2.1 W of incident pump power at 885nm, leading to a high slope efficiency with respect to the absorbed pump power of 68.5% and 42.0%. Comparative results obtained by the traditional pumping at 808nm are presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power at 1064nm under the 885nm pumping are 12.2% higher and 7.3% lower than those of 808rim pumping. At 1319nm, the slope efficiency and the threshold with respect to the absorbed pump power under 885nm pumping are 9.9% higher and 3.5% lower than those of 808 nm pumping. The heat generation operating at 1064 nm and 1319 nm is reduced by 19.8% and 11.1%, respectively.     

Performance improvement of high repetition rate electro-optical cavity-dumped Nd:GdVO<Subscript>4</Subscript> laser

We improved the electro-optical cavity-dumped Nd:GdVO₄ laser performance at high repetition rates by employing continuous-grown GdVO₄/Nd:GdVO₄ composite crystal under 879 nm diode-laser pumping. A constant 3.8 ns duration pulsed laser was obtained and the repetition rate could reach up to 100 kHz with a maximum average output power of 13.1 W and a slope efficiency of 56.4%, corresponding to a peak power of 34.4 kW.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

Theoretical and experimental investigations of a diode-pumped high-power continuous-wave 912 nm Nd:GdVO4 laser operation at room temperature

Based on the rate equation of Nd³⁺-doped quasi-three-level lasers, a theoretical model of diode-end-pumped continuous-wave 912 nm Nd:GdVO₄ laser is presented. Lasing threshold and slope efficiency considering reabsorption effect are calculated and analyzed. It is found that the output performance of 912 nm laser operating at room temperature is influenced remarkably by the reabsorption loss and spatial distribution of the pump beam and laser beam. In experiments, the output power and average slope efficiency of 912 nm laser were investigated under different conditions. After optimization at the parameters of laser medium, working temperature and spatial distribution of the pump beam, up to 16.2 W continuous-wave 912 nm laser output was obtained at incident pump power of 67.0 W, with an average slope efficiency of 41.7%, to the best of our knowledge, this is the highest output power of diode-pumped 912 nm Nd:GdVO₄ laser by far.     

26.3-W continuous-wave, diode-double-end-pumped all-solid-state Nd:GdVO4 laser operating at 1.34 μm

A high-power continuous-wave (CW) all-solid-state Nd:GdVO₄ laser operating at 1.34 μm is reported here. The laser consists of a low doped level Nd:GdVO₄ crystal double-end-pumped by two high-power fiber-coupled diode lasers and a simple plane-parallel cavity. At an incident pump power of 88.8 W, a maximum CW output of 26.3 W at 1.34 μm is obtained with a slope efficiency of 33.7%. To the best of our knowledge, this is the highest output at 1.34 μm ever generated by diode-end-pumped all-solid-state lasers.     

Efficient pulse operation of Nd:GdVO4 laser with AO Q-switch

We realized an efficient laser diode-pumped Nd:GdVO₄ laser with crystals grown by the floating zone method. In the lasing experiment, a slope efficiency of 78% was achieved with a 1 at.% Nd-doped crystal by pumping at 879 nm. Furthermore, excellent pulsed laser operation was demonstrated with the Nd:GdVO₄ crystal by using an acousto-optical (AO) Q-switch. A pulse width of 7 ns was observed when the pulse-repetition frequency was 40 kHz. It is the shortest pulse width recorded in the case of the AO Q-switched Nd:GdVO₄ laser.     

High efficiency 1341 nm Nd:GdVO<Subscript>4</Subscript> bounce laser in-band pumped at 879 nm

A high-efficiency Nd:GdVO₄ bounce laser in-band pumped at 879 nm is demonstrated for the first time. From a side-pumped Nd:GdVO₄ crystal, 8.2 W output was obtained with 18.5 W absorbed pump power. Corresponding slope efficiency with respect to the absorbed pump power was 51.4%, and the beam quality factor M2 is 1.13 and 1.15 for tangential direction and sagittal direction, respectively. Effects of crystal’s doping concentration and temperature on laser power and conversion efficiency were also investigated.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser operation at 914 nm under 879 nm diode laser pumping

We present experimental investigation on quasi-three-level Nd:YVO₄ laser operation at 914 nm under 879 nm diode pumping directly into emitting level. A maximal output power of 3.0 W under an absorbed pump power of 13.4 W was got, corresponding to an optical conversion efficiency of 22.4% and a slope efficiency of 40.3%. To the best of our knowledge, this is the first report on a Nd:YVO₄ laser at 914 nm using rod-type single crystal as the gain medium and end pumped by diode directly into the emitting level.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.     

Laser operation at high repetition rate of 100 kHz in Nd:GdVO4 under 879 nm diode-laser pumping

Highly efficient continuous-wave and acousto-optically Q-switched laser emission in Nd:GdVO₄ crystal, end-pumped at 879 nm into the laser emitting level, are reported. A maximum cw output power of 13.3 W is obtained, corresponding to the slope efficiency of 74.6% in absorbed power; an average output power of 12.1 W, a pulse width of 20.3 ns and a peak power of about 6 kW are reached at 100 kHz in A-O Q-switched operation. PACS  42.55.-f; 42.55.Xi; 42.60.Gd     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

Self-Q-switched and mode-locked Nd,Cr:YAG laser with 6.52-W average output power

Simultaneous self-Q-switched and mode-locked have been demonstrated in a diode-pumped Nd,Cr:YAG laser. For the first time as we know, almost 100% modulation depth has been achieved at an intracavity intensity of 5.6 × 10⁵ W/cm². The maximum average output power of 6.52 W corresponding to a slope efficiency of 30% is obtained at 1064 nm. The laser produces high-quality pulses in a TEM₀₀-mode at the pump power of 16.5 W. The pulse duration of the mode-locked pulses is about 600 ps with 136 MHz repetition rate.