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We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions. 相似文献
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Nano-carbon films with large density of caterpillar-like clavae are synthesized by microwave plasma-assisted chemical vapor deposition using a mixture of methane and hydrogen gases on Mo film substrates. The films are characterized by Raman spectra, optical microscopy and field emission scanning electron microscopy. Field electron emission measurements of nano-carbon films are also carried out to show the turn-on field as low as 1.5 V/μm and the high current density of 2.2mA/cm^2 at electric field of 5.TV/μm, the uniformly distributed emission site density from a broad well-proportioned emission area of about 4.0cm^2 is also obtained. The field- emission current density J versus macroscopic electric field E does not follow the original Fowler-Nordheim （F-N） relation since they are not well represented in the F-N plot by a straight line. A modified F-N relation is applied successfully to explain all the field-emission data observed for E 〈 6.0 V/μm. 相似文献
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A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V. 相似文献
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