Enhanced mobility of MoS2 field-effect transistors by combining defect passivation with dielectric-screening effect

A facile method of combining the defect engineering with the dielectric-screening effect is proposed to improve the electrical performance of MoS₂ transistors. It is found that the carrier mobility of the transistor after the sulfur treatment on the MoS₂ channel is greatly enhanced due to the reduction of the sulfur vacancies during vulcanization of MoS₂.Furthermore, as compared to those transistors with HfO2 and SiO2 as the gate dielectric, the Al2O3-gate dielectric MoS₂ FET shows a better electrical performance after the sulfur treatment, with a lowered subthreshold swing of 179.4 m V/dec,an increased on/off ratio of 2.11 × 10⁶, and an enhanced carrier mobility of 64.74 cm²/V·s(about twice increase relative to the non-treated MoS₂ transistor with SiO2 as the gate dielectric). These are mainly attributed to the fact that a suitable k-value gate dielectric can produce a dominant dielectric-screening effect overwhelming the phonon scattering, increasing the carrier mobility, while a larger k-value gate dielectric will enhance the phonon scattering to counteract the dielectricscreening effect, reducing the carrier mobility.     

Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer for LiB3O5 crystal

Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer were investigated for LiB3O5 (LBO) substrate. The design was based on the vector method. The thickness of the inserted SiO2 interlayer could be changed in a wide range for the four-layer design with two zeros at 1064 and 532 nm. The coatings without any interlayer and with 0.1 quarter-wave (λ/4), 0.3λ/4, 0.5λ/4 SiO2 interlayer were deposited respectively on LBO by using electron beam evaporation technique. All the prepared coatings with SiO2 interlayer indicated satisfying optical behavior. This expanded our option for the thickness of an interlayer when coating on LBO substrate. The prepared films with SiO2 interlayer showed better adhesion than that without any interlayer. The thickness of the interlayer affected the adhesion, the adhesion for the coating with 0.5λ/4 SiO2 interlayer was not as good as the other two.     

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.     

Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates

Graphene with different surface morphologies were fabricated on 8° -off-axis and on-axis 4H-SiC(0001) substrates by high-temperature thermal decompositions. Graphene grown on Si-terminated 8° -off-axis 4H-SiC(0001) shows lower Hall mobility than the counterpart of on-axis SiC substrates. The terrace width is not responsible for the different electron mobility of graphene grown on different substrates, as the terrace width is much larger than the mean free path of the electrons. The electron mobility of graphene remains unchanged with an increasing terrace width on Siterminated on-axis SiC. Interface scattering and short-range scattering are the main factors affecting the mobility of epitaxial graphene. After the optimization of the growth process, the Hall mobility of the graphene reaches 1770 cm 2 /V·s at a carrier density of 9.8.×10 12 cm 2 . Wafer-size graphene was successfully achieved with an excellent double-layer thickness uniformity of 89.7% on a 3-inch SiC substrate.     

A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.     

Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE

We report the growth of InSb layers directly on GaAs(001) substrates without any buffer layers by molecular beam epitaxy(MBE). Influences of growth temperature and Ⅴ/Ⅲ flux ratios on the crystal quality, the surface morphology and the electrical properties of InSb thin films are investigated. The InSb samples with roomtemperature mobility of 44600 cm~2/Vs are grown under optimized growth conditions. The effect of defects in InSb epitaxial on the electrical properties is researched, and we infer that the formation of In vacancy(V_(In))and Sb anti-site(Sb_(In)) defects is the main reason for concentrations changing with growth temperature and Sb_2/In flux ratios. The mobility of the InSb sample as a function of temperature ranging from 90 K to 360 K is demonstrated and the dislocation scattering mechanism and phonon scattering mechanism are discussed.     

Spin—Dependent Scattering Effects and Dimensional Crossover in a Quasi—Two—Dimensional Disordered Electron System

Two kinds of spin-dependent scattering effects (magnetic-impurity and spin-orbit scatterings) are investigated theoretically in a quasi-tow-dimensional (quasi-2D) disordered electron system.By making use of the diagrammatic techniques in perturbation theory,we have calculated the dc conductivity and magnetoresistance due to weak-localization effects,the analytical expressions of them are obtained as functions of the interlayer hopping energy and the characteristic times:elastic,inelastic,magnetic and spin-orbit scattering times.The relevant dimensional crossover behavior from 3D to 2D with decreasing the interlayer coupling is discussed,and the condition for the crossover is shown to be dependent on the aforementioned scattering times.At low temperature there exists a spin-dependent-scattering-induced dimensional crossover in this system.     

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.     

The origin of blue photoluminescence from nc-Si/SiO2 multilayers

Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO$_{2}$ (nc-Si/SiO$_{2})$ multilayers (MLs) obtained by thermal annealing of SiO/SiO$_{2}$\,MLs for the first time. By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm, the PL peak blueshifts from 457 to 411 nm. Combining the analysis of TEM, Raman and absorption measurement, this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO$_{2}$.     

微米/纳米相结合的三维金属铝图案

利用光刻，反应离子刻蚀以及电化学阳极氧化技术在铝基底上构建出了微米纳米相结合的三维金属铝图案。首先在铝片的表面形成一层具有图案的二氧化硅阻碍层，阳极氧化过程中，在二氧化硅阻碍层之下会形成侧向生长的倾斜孔道和残留的金属铝微结构。形成机制可阐述为：由于表面二氧化硅阻碍层的存在造成局域电场方向的偏折，影响到反应过程中离子的输运，从而导致侧向倾斜孔的形成，而在远离阻碍层的区域孔道则会正常垂直表面向下生长。这种垂直与侧向阳极腐蚀的同时进行导致在二氧化硅阻碍层之下形成了金属铝微结构。     

AlGaN插入层对InAlN/AlGaN/GaN异质结散射机制的影响

InAlN/AlN/GaN异质结中,名义上的AlN插入层实为Ga含量很高的AlGaN层, Al, Ga摩尔百分比决定了电子波函数与隧穿几率,因此影响与InAlN/AlGaN势垒层有关的散射机制.本文通过求解薛定谔-泊松方程与输运方程,研究了AlGaN层Al摩尔百分含量对InAlN组分不均匀导致的子带能级波动散射、导带波动散射以及合金无序散射三种散射机制的影响.结果显示:当Al含量由0增大到1,子带能级波动散射强度与合金无序散射强度先增大后减小,导带波动散射强度单调减小;在Al含量为0.1附近的小组分范围内,合金无序散射是限制迁移率的主要散射机制,该组分范围之外,子带能级波动散射是限制迁移率的主要散射机制;当Al摩尔百分含量超过0.52,三种散射机制共同限制的迁移率超过无插入层结构的迁移率, AlGaN层显示出对迁移率的提升作用.     

A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors (HEMTs) with thin-barrier to minimize surface leakage current to enhance the breakdown voltage. The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si$_{3}$N$_{4}$ was deposited by plasma-enhanced chemical vapor deposition (PECVD) after removing 20-nm SiO$_{2}$ pre-deposition layer. Compared to traditional Si$_{3}$N$_{4}$ passivation for thin-barrier AlGaN/GaN HEMTs, Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54% to 8.40%. However, Si-rich bilayer passivation leads to a severer surface leakage current, so that it has a low breakdown voltage. The 20-nm SiO$_{2}$ pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga-O bonds, resulting in a lower surface leakage current. In contrast to passivating Si-rich SiN directly, devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V. Radio frequency (RF) small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to $f_{\rm T}/f_{\rm max}$ of 68 GHz/102 GHz. At 30 GHz and $V_{\rm DS} = 20$ V, devices achieve a maximum $P_{\rm out}$ of 5.2 W/mm and a peak power-added efficiency (PAE) of 42.2%. These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.     

A comparative study of YBa2Cu3O7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

Highly epitaxial YBa2Cu3O7-δ (YBCO) and yttria-stabilized zirconia (YSZ) bilayer thin films have been deposited on silicon-on-insulator (SOI) substrates by using in situ pulsed laser deposition (PLD) technique. In the experiment, the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.     

介质壁加速器加速场建立过程中波传输分析

 介绍了介质壁加速器(DWA)的原理和几种可能实现的结构。通过对多层介质圆柱的平面波电磁散射的研究,用FORTRAN语言编写程序计算和分析了DWA加速管三层介质柱体结构的平面波电磁散射的散射宽度与几何结构参数、材料参数的关系,用以优化设计介质壁加速管结构。计算结果表明：当加速管材料和等势环介电常数一定时,平面波电磁散射宽度随半径增大而增大;当加速管内外径一定时,加速管材料和等势环介电常数增大时散射宽度变化不明显,但最小散射宽度显著减小。当加速管半径和材料一定时,总能找到使散射宽度达到最小的等势环介质厚度。     

Influence of HF catalyst on the microstructure properties of ultra low-k thin films prepared by sol-gel method

This paper reports that by using the hydrofluoric acid （HF） as the acid catalyst, F doped nanoporous low-k SiO2 thin films have been prepared by means of sol-gel method. The characterization of atomic force microscopy and Fourier transform infrared spectroscopy demonstrates that the HF catalyzed films are more hydrophobic. The N2 adsorption/desorption experiments show that the suited introduction of HF increases the porosity and decreases the pore size distribution （about 10 nm） in the films. The above results indicate that the hydrofluoric acid is the more suitable acid catalyst than the hydrochloric one for preparing nanoporous ultra low-k SiO2 thin films.     

Ru thickness-dependent interlayer coupling and ultrahigh FMR frequency in FeCoB/Ru/FeCoB sandwich trilayers

The antiferromagnetic (AFM) interlayer coupling effective field in a ferromagnetic/non-magnetic/ferromagnetic (FM/NM/FM) sandwich structure, as a driving force, can dramatically enhance the ferromagnetic resonance (FMR) frequency. Changing the non-magnetic spacer thickness is an effective way to control the interlayer coupling type and intensity, as well as the FMR frequency. In this study, FeCoB/Ru/FeCoB sandwich trilayers with Ru thickness ($t_{\rm Ru}$) ranging from 1 Å to 16 Å are prepared by a compositional gradient sputtering (CGS) method. It is revealed that a stress-induced anisotropy is present in the FeCoB films due to the B composition gradient in the samples. A $t_{\mathrm{Ru}}$-dependent oscillation of interlayer coupling from FM to AFM with two periods is observed. An AFM coupling occurs in a range of $2 {\rm Å} \le t_{\rm Ru} \le 8 {\rm Å}$ and over 16 $\mathrm{Å}$, while an FM coupling is present in a range of $t_{\rm Ru}< 2$ Å and $9 {\rm Å} \le t_{\rm Ru} \le 14.5 Å$. It is interesting that an ultrahigh optical mode (OM) FMR frequency in excess of 20 GHz is obtained in the sample with ${t}_{\mathrm{Ru}}= 2.5 \mathrm{Å}$ under an AFM coupling. The dynamic coupling mechanism in trilayers is simulated, and the corresponding coupling types at different values of $t_{\mathrm{Ru}}$ are verified by Layadi's rigid model. This study provides a controllable way to prepare and investigate the ultrahigh FMR films.     

Finite element simulation of Love wave sensor for the detection of volatile organic gases

The three-dimensional (3D) finite element (FE) simulation and analysis of Love wave sensors based on polyisobutylene (PIB) layers/SiO$_{2}$/ST-90$^\circ$X quartz structure are presented in this paper, as well as the investigation of coupled resonance effect on the acoustic properties of the devices. The mass sensitivity of the basic Love wave device with SiO$_{2}$ guiding layers is solved analytically. And the highest mass sensitivity of 128 m$^{2}$/kg is obtained as $h_{\rm s}/\lambda =0.175$. The sensitivity of the Love wave sensors for sensing volatile organic compounds (VOCs) is greatly improved due to the presence of coupled resonance induced by the PIB nanorods on the device surface. The frequency shifts of the sensor corresponding to CH$_{2}$Cl$_{2}$, CHCl$_{3}$, CCl$_{4}$, C$_{2}$Cl$_{4}$, CH$_{3}$Cl and C$_{2}$HCl$_{3}$ with the concentration of 100 ppm are 1.431 kHz, 5.507 kHz, 13.437 kHz, 85.948 kHz, 0.127 kHz and 17.879 kHz, respectively. The viscoelasticity influence of the sensitive material on the characteristics of SAW sensors is also studied. By taking account of the viscoelasticity of the PIB layers, the sensitivities of the SAW sensors with the PIB film and PIB nanorods decay in different degree. The gas sensing property of the Love wave sensor with PIB nanorods is superior to that of the PIB films. Meanwhile, the Love wave sensors with PIB sensitive layers show good selectivity to C$_{2}$Cl$_{4}$, making it an ideal selection for gas sensing applications.