阳极氧化铝模板表面自组织条纹的形成

对未经化学抛光处理的Al进行阳极氧化得到阳极氧化铝模板，发现Al表面形成了条纹与多孔阵列共存的自组织结构，用原子力显微镜对这种结构进行了研究.借助Brusselator模型对条纹的形成机理进行了讨论，认为条纹图案是Al表面氧化层/电解液界面的Al₂O₃在整个反应过程中的生成和溶解两个过程相互竞争导致的，只有在特定的反应条件才会出现高度有序的结构. 关键词： 氧化铝模板（AAO） 原子力显微镜（AFM） 自组织条纹 Brusselator模型     

多孔阳极氧化物的形成效率与纳米孔道的形成机理

多孔型阳极氧化铝（PAA）和多孔阳极氧化钛纳米管因其在诸多领域的广泛应用而备受关注．然而这类多孔阳极氧化物中纳米孔道的形成机理至今还不清楚,阳极氧化过程中电流一时间曲线与多孔形貌之间的关系至今无法解释．本文从致密型阳极氧化铝（CAA）的击穿机理入手,详细对比了CAA和PAA形成过程的区别与内在联系,从两种氧化膜电流．时间曲线（或电压一时间曲线）的分界点这个全新视角入手,找出了阳极氧化过程中氧化物形成效率下降的本质原因是电子电流的产生和氧气的析出．在CAA中球形孔洞的证据充分说明初期的规则孔洞是氧气气泡形成的．铝在混合电解液中阳极氧化的结果表明,一旦氧气析出停止,孔道生长就停止并被致密型的氧化物覆盖,一种新型的复合型氧化膜由此而得．最终结果表明：在PAN的形成过程中,适当的电子电流是氧气析出和孔洞形成的保证,适当的离子电流是氧化物形成和孔壁生长的保证．     

倾斜L形手性结构的制备以及圆二色性

在单层聚苯乙烯小球模板上,制备了大面积倾斜L形手性结构.通过倾斜角沉积技术,在小球的一侧生长二氧化硅,在二氧化硅上面沉积金属层;在垂直方向沉积另一金属层,使两个金属层具有不同高度从而形成倾斜L形手性结构.研究发现,通过控制二氧化硅的厚度,可以实现倾斜L形手性结构的圆二色性的调控.数值模拟结果表明,倾斜L形手性结构的圆二色性机制符合Born-Kuhn模型理论.     

HCT晶体上电化学阳极化膜的AES研究

对Ｈｇ１－ｘＤｄｘＴｅ（ＨＣＴ）晶体表面上由电化学阳极化生长的氧化膜进行了俄歇电子能谱分析，并经Ａｒ＾＋离子蚀刻，研究了薄膜及其与底晶的界面层的深度元素分布和化学计量，估计了可能生成的化合物，阐述了阳极化过程中电流密度，糟电压及电解质溶液浓度对阳极化膜的ＡＥＳ的影响。     

Mesoporous Silica Materials Synthesized via Sol-Gel Methods Modified with Ionic Liquid and Surfactant Molecules

采用离子液体1-甲基-3-丁基咪唑四氟硼酸盐改性的溶胶-凝胶法以及表面活性剂十六烷基三甲基溴化铵进一步改性的溶胶-凝胶法制备介孔二氧化硅. 通过X射线衍射、氮气吸附脱附和扫描电子显微镜对所制备的样品进行表征. 结果表明,与仅用离子液体为模板制备的介孔二氧化硅相比,采用表面活性剂和离子液体的混合物为模板制备的介孔二氧化硅具有较小的孔径和较规则的孔结构. 说明利用该方法制备介孔二氧化硅,表面活性剂的加入会在一定程度上影响所制介孔二氧化硅的微结构.     

立方氮化硼薄膜生长过程中的界面控制

在立方氮化硼薄膜气相生长过程中生成的无定形初期层和乱层结构氮化硼中间层，一直是阻碍立方氮化硼薄膜外延生长的主要原因.系统地分析了硅衬底预处理对立方氮化硼薄膜中无定形初期层成分的影响，发现在等离子体化学气相生长法制备薄膜时，硅衬底上形成无定形初期层的可能原因有氧的存在、离子轰击以及高温下硅的氮化物的形成.在H₂气氛中1200K热处理硅衬底可以有效地减少真空室中残留氧浓度，除去硅表面的自然氧化层，保持硅衬底表面晶体结构.控制衬底温度不超过900 K，就能防止硅的氮化物的形成，成功地除去无 关键词： 立方氮化硼薄膜 等离子体化学气相生长 界面 电子显微镜     

Ti(Cr)缓冲层对用于垂直磁记录材料CoCrTa介质磁特性和微结构的影响

利用直流对靶磁控溅射技术在单晶Si衬底上制备了C/CoCrTa/X (X=Cr，Ti)介质材料.分别采用振动样品磁强计、X射线衍射仪、扫描探针显微镜对样品的磁性、微结构等进行了测试分析.研究发现，Ti缓冲层有利于样品中Co晶粒的易轴垂直于膜面生长.以Ti为缓冲层的样品，颗粒尺寸和表面粗糙度较小，而且磁畴明显，说明以Ti为缓冲层的薄膜样品更适宜做垂直磁记录. 关键词： CoCrTa 垂直磁记录 缓冲层 微结构     

光纤圆柱曲面基底胶体微球的自组装

以标准单模光纤包层的外表面作为基底,通过改进的恒温蒸发对流引导合理控制溶剂蒸发温度和液体表面下降的速度,使用垂直沉积法在其曲面圆柱型基底涂覆三维二氧化硅胶体晶体。单模光纤垂直插入二氧化硅胶体溶液中,处于圆形容器的中心,在毛细力的驱动下胶体微球在光纤外表面形成三维的胶体晶体薄膜。实验所用二氧化硅微球平均粒径为390 nm,晶体生长时间仅为12 h。用扫描电子显微镜(SEM)分析了样品的表明形貌:确定了样品表面面心立方结构的[111]和[100]两种晶向排列,同时发现了[100]晶向之间有规律的[111]晶向排列的交叉图案。对胶体微球不同的晶向排列以及交叉图案进行了定性的分析和讨论。     

石墨烯表面的特征水分子排布及其湿润透明特性的分子动力学模拟

石墨烯因其独特的分子构型、卓越的物理化学性能而受到广泛关注.本文首先利用分子动力学模拟比较了单层石墨烯、铜、二氧化硅三者表面的浸润性,除了接触角的比较,还分析了基底表面的水分子排布,得到石墨烯表面的特征水分子排布为:表面有两层密集的水分子层,其中靠近基底的密集水分子层中O—H键与垂直基底方向夹角集中在90°附近,并且基底表面的氢键几乎都垂直于基底.另一方面,本文研究了石墨烯浸润透明特性,发现在铜和二氧化硅上添加一层石墨烯,对铜的浸润性影响较小,对二氧化硅的浸润性影响很大,不仅使其上接触角显著增大,还使得基底表面的水分子排布呈现出类似单层石墨烯上的规律.本文使用分子动力学模拟方法从微观尺度验证了文献的实验结果,从基底表面水分子排布角度分析了石墨烯独特的浸润透明特性,为进一步开发石墨烯在微结构设计上的应用提供了理论指导.     

氦等离子体处理对纳米二氧化硅溶胶涂覆T300碳纤维拉伸性能的影响

氦等离子体处理纳米二氧化硅溶胶涂覆T300碳纤维能构造出特定空间结构形态的纳米涂覆层.扫描电子显微镜照片显示,经氦等离子体处理后纳米二氧化硅溶胶涂覆T300碳纤维的纳米涂覆层在纤维表面分布均匀,起到填补纤维表面微观缺陷的功能.X射线光电子能谱及傅里叶变换红外光谱显示,纤维表面被引入了活性官能团,纳米二氧化硅涂覆层与碳纤维间有表面激活反应.形成纳米界面结构的T300碳纤维表面与纳米二氧化硅涂覆层间的相互作用符合艾琳方程,利用热激活体积可以对其相互作用进行定量分析.拉伸试验表明,屈服塑性变形导致纳米界面结构热激活,纳米微粒阻碍碳纤维表面大分子链形貌变化的热激活体积是纳米界面结构性能的重要表征. 关键词： 激活体积 溶胶涂覆 氦等离子体 纳米界面结构     

The origin of blue photoluminescence from nc-Si/SiO2 multilayers

Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO$_{2}$ (nc-Si/SiO$_{2})$ multilayers (MLs) obtained by thermal annealing of SiO/SiO$_{2}$\,MLs for the first time. By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm, the PL peak blueshifts from 457 to 411 nm. Combining the analysis of TEM, Raman and absorption measurement, this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO$_{2}$.     

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.     

A comparative study of YBa2Cu3O7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

Highly epitaxial YBa2Cu3O7-δ (YBCO) and yttria-stabilized zirconia (YSZ) bilayer thin films have been deposited on silicon-on-insulator (SOI) substrates by using in situ pulsed laser deposition (PLD) technique. In the experiment, the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.     

Finite element simulation of Love wave sensor for the detection of volatile organic gases

The three-dimensional (3D) finite element (FE) simulation and analysis of Love wave sensors based on polyisobutylene (PIB) layers/SiO$_{2}$/ST-90$^\circ$X quartz structure are presented in this paper, as well as the investigation of coupled resonance effect on the acoustic properties of the devices. The mass sensitivity of the basic Love wave device with SiO$_{2}$ guiding layers is solved analytically. And the highest mass sensitivity of 128 m$^{2}$/kg is obtained as $h_{\rm s}/\lambda =0.175$. The sensitivity of the Love wave sensors for sensing volatile organic compounds (VOCs) is greatly improved due to the presence of coupled resonance induced by the PIB nanorods on the device surface. The frequency shifts of the sensor corresponding to CH$_{2}$Cl$_{2}$, CHCl$_{3}$, CCl$_{4}$, C$_{2}$Cl$_{4}$, CH$_{3}$Cl and C$_{2}$HCl$_{3}$ with the concentration of 100 ppm are 1.431 kHz, 5.507 kHz, 13.437 kHz, 85.948 kHz, 0.127 kHz and 17.879 kHz, respectively. The viscoelasticity influence of the sensitive material on the characteristics of SAW sensors is also studied. By taking account of the viscoelasticity of the PIB layers, the sensitivities of the SAW sensors with the PIB film and PIB nanorods decay in different degree. The gas sensing property of the Love wave sensor with PIB nanorods is superior to that of the PIB films. Meanwhile, the Love wave sensors with PIB sensitive layers show good selectivity to C$_{2}$Cl$_{4}$, making it an ideal selection for gas sensing applications.     

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊

A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.     

A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors (HEMTs) with thin-barrier to minimize surface leakage current to enhance the breakdown voltage. The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si$_{3}$N$_{4}$ was deposited by plasma-enhanced chemical vapor deposition (PECVD) after removing 20-nm SiO$_{2}$ pre-deposition layer. Compared to traditional Si$_{3}$N$_{4}$ passivation for thin-barrier AlGaN/GaN HEMTs, Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54% to 8.40%. However, Si-rich bilayer passivation leads to a severer surface leakage current, so that it has a low breakdown voltage. The 20-nm SiO$_{2}$ pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga-O bonds, resulting in a lower surface leakage current. In contrast to passivating Si-rich SiN directly, devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V. Radio frequency (RF) small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to $f_{\rm T}/f_{\rm max}$ of 68 GHz/102 GHz. At 30 GHz and $V_{\rm DS} = 20$ V, devices achieve a maximum $P_{\rm out}$ of 5.2 W/mm and a peak power-added efficiency (PAE) of 42.2%. These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.     

Formation mechanism of Ge nanocrystals embedded in SiO2 studied by fluorescence x-ray absorption fine structure

This paper reports that the Ge nanocrystals embedded in SiO2 matrix are grown on Si（100） and quartz-glass substrates, and the formation mechanism is systematically studied by using fluorescence x-ray absorption fine structure （XAFS）. It is found that the formation of Ge nanocrystals strongly depends on the properties of substrate materials. In the as-prepared samples with Ge molar content of 60%, Ge atoms exist in amorphous Ge （about 36%） and GeO2 （about 24%） phases. At the annealing temperature of 1073 K, on the quartz-glass substrate Ge nanocrystals are generated from crystallization of amorphous Ge, rather than from the direct decomposition of GeO2 in the as-deposited sample. However, on the Si（100） substrate, the Ge nanocrystals are generated partly from crystallization of amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis reveals that about 10% of GeO2 in the as-prepared sample are permuted with Si wafer to form Ge nanocrystals.     

Influence of HF catalyst on the microstructure properties of ultra low-k thin films prepared by sol-gel method

This paper reports that by using the hydrofluoric acid （HF） as the acid catalyst, F doped nanoporous low-k SiO2 thin films have been prepared by means of sol-gel method. The characterization of atomic force microscopy and Fourier transform infrared spectroscopy demonstrates that the HF catalyzed films are more hydrophobic. The N2 adsorption/desorption experiments show that the suited introduction of HF increases the porosity and decreases the pore size distribution （about 10 nm） in the films. The above results indicate that the hydrofluoric acid is the more suitable acid catalyst than the hydrochloric one for preparing nanoporous ultra low-k SiO2 thin films.     

Nanocrystallization behaviour of a ternary amorphous alloy during isothermal annealing： a Monte Carlo simulation

The nanocrystallization behaviour of Zr70Cu20Ni10 metallic glass during isothermal annealing is studied by employing a Monte Carlo simulation incorporating with a modified Ising model and a Q-state Potts model. Based on the simulated microstructure and differential scanning calorimetry curves, we find that the low crystal-amorphous interface energy of Ni plays an important role in the nanocrystallization of primary Zr2Ni. It is found that when T〈T1max （where T1max is the temperature with maximum nucleation rate）, the increase of temperature results in a larger growth rate and a much finer mierostrueture for the primary Zr2Ni, which accords with the microstructure evolution in ＂flash annealing＂. Finally, the Zr2Ni/Zr2Cu interface energy σG contributes to the pinning effect of the primary nano-sized Zr2Ni grains in the later formed normal Zr2Cu grains.     

Co-Al-W基高温合金的团簇成分式

Co-Al-W基高温合金具有类似于Ni基高温合金的γ+γ'相组织结构.根据面心立方固溶体的团簇加连接原子结构模型,Ni基高温合金的成分式即最稳定的化学近程序结构单元可以描述为第一近邻配位多面体团簇加上次近邻的三个连接原子.本文应用类似方法,首次给出了Co-Al-W基高温合金的团簇成分式.利用原子半径和团簇共振模型,可计算出Co-Al-W三元合金的团簇成分通式,为[Al-Co_(12)](Co,Al,W)_3,即以Al为中心原子、Co为壳层原子的[Al-Co_(12)]团簇加上三个连接原子.对于多元合金,需要先将元素进行分类:溶剂元素——类Co元素Co (Co, Cr, Fe, Re, Ni,Ir,Ru)和溶质元素——类Al元素Al (Al,W,Mo, Ta,Ti,Nb,V等);进而根据合金元素的配分行为,将类Co元素分为Co~γ(Cr, Fe, Re)和Co~(γ')(Ni, Ir, Ru);根据混合焓,将类Al元素分为Al, W (W, Mo)和Ta (Ta, Ti, Nb, V等).由此,任何多元Co-Al-W基高温合金均可简化为Co-Al伪二元体系或者Co-Al-(W,Ta)伪三元体系,其团簇加连接原子成分式为[Al-Co_(12)](Co_(1.0)Al_(2.0))(或[Al-Co_(12)] Co_(1.0)Al_(0.5)(W,Ta)_(1.5)=Co_(81.250)Al_(9.375)(W,Ta)_(9.375) at.%).其中,γ与γ'相的团簇成分式分别为[Al-Co_(12)](Co_(1.5)Al_(1.5))(或[Al-Co_(12)] Co_(1.5)Al_(0.5)(W,Ta)_(1.0)=Co_(84.375)Al_(9.375)(W,Ta)_(6.250) at.%)和[Al-Co_(12)](Co_(0.5)Al_(2.5))(或[Al-Co_(12)] Co_(0.5)Al_(0.5)(W, Ta)_(2.0)=Co_(78.125)Al_(9.375)(W,Ta)_(12.500)at.%).例如,Co_(82)Al_9W_9合金的团簇成分式为[Al-Co_(12)]Co_(1.1)Al_(0.4)W_(1.4)(～[Al-Co_(12)]Co_(1.0)Al_(0.5)W_(1.5)),其中γ相的团簇成分式为[Al-Co_(12)]Co_(1.6)Al_(0.4)W_(1.0)(～[Al-Co_(12)]Co_(1.5)Al_(0.5)W_(1.0)),γ'相的团簇成分式为[Al-Co_(12)]Co_(0.3)Al_(0.5)W_(2.2)(～[AlCo_(12)]Co_(0.5)Al_(0.5)W_(2.0)).