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1.
The phenomenon of phase separation into antiferromagnetic(AFM) and superconducting(SC) or normal-state regions has great implication for the origin of high-temperature(high-T_c) superconductivity. However, the occurrence of an intrinsic antiferromagnetism above the T_c of(Li,Fe)OHFe Se superconductor is questioned. Here we report a systematic study on a series of(Li,Fe)OHFe Se single crystal samples with T_c up to ~41 K. We observe an evident drop in the static magnetization at T_(afm) ~ 125 K, in some of the SC(T_c 38 K, cell parameter c■9.27 ?) and non-SC samples. We verify that this AFM signal is intrinsic to(Li,Fe)OHFe Se. Thus, our observations indicate mesoscopic-to-macroscopic coexistence of an AFM state with the normal(below T_(afm)) or SC(below T_c) state in(Li,Fe)OHFe Se. We explain such coexistence by electronic phase separation, similar to that in high-T_c cuprates and iron arsenides. However, such an AFM signal can be absent in some other samples of(Li,Fe)OHFe Se, particularly it is never observed in the SC samples of T_c 38 K, owing to a spatial scale of the phase separation too small for the macroscopic magnetic probe. For this case, we propose a microscopic electronic phase separation. The occurrence of two-dimensional AFM spin fluctuations below nearly the same temperature as T_(afm), reported previously for a(Li,Fe)OHFe Se(T_c ~ 42 K) single crystal, suggests that the microscopic static phase separation reaches vanishing point in high T_c(Li,Fe)OHFe Se. A complete phase diagram is thus established. Our study provides key information of the underlying physics for high-T_c superconductivity.  相似文献   
2.
董晓莉  金魁  袁洁  周放  张广铭  赵忠贤 《物理学报》2018,67(20):207410-207410
FeSe基超导体的超导临界温度可大范围调控,物理现象丰富,是非常规超导机理研究的热点.由于较高的超导临界参数及易于加工等特点,FeSe基超导体在超导应用开发方面也日益受到重视.大尺寸高质量的单晶和薄膜形态的FeSe基超导材料,对于相关基础科学研究和应用开发都极为重要.作者近年来先后开发和发明了水热离子交换(ion-exchange)、离子脱插(ion-deintercalation)、基底辅助水热外延生长方法,成功解决了二元FeSe和插层(Li,Fe)OHFeSe超导体高质量单晶和薄膜的生长和物性调控难题.进而在相关物理问题的研究中取得新进展,包括发现二元FeSe中自旋向列序与超导电性密切相关,观测到(Li,Fe)OHFeSe中的电子相分离现象.此外,(Li,Fe)OHFeSe超导薄膜呈现很高的超导临界电流密度和上临界磁场,其应用前景值得关注.  相似文献   
3.
The Major ana zero mode(MZM), which manifests as an exotic neutral excitation in superconductors, is the building block of topological quantum computing. It has recently been found in the vortices of several iron-based superconductors as a zero-bias conductance peak in tunneling spectroscopy. In particular, a clean and robust MZM has been observed in the cores of free vortices in(Li_(0.84)Fe_(0.16))OHFeSe. Here using scanning tunneling spectroscopy, we demonstrate that Major ana-induced resonant Andreev reflection occurs between the STM tip and this zero-bias bound state,and consequently, the conductance at zero bias is quantized as 2e~2/h. Our results present a hallmark signature of the MZM in the vortex of an intrinsic topological superconductor, together with its intriguing behavior.  相似文献   
4.
By partially doping Pb to effectively suppress the superstructure in single-layered cuprate Bi_2Sr_2CuO_(6+δ)(Pb-Bi2201) and annealing them in vacuum or in high pressure oxygen atmosphere, a series of high quality Pb-Bi2201 single crystals are obtained with T_c covering from 17 K to non-superconducting in the overdoped region. High resolution angle resolved photoemission spectroscopy measurements are carried out on these samples to investigate the evolution of the Fermi surface topology with doping in the normal state. Clear and complete Fermi surfaces are observed and quantitatively analyzed in all of these overdoped Pb-Bi2201 samples. A Lifshitz transition from holelike Fermi surface to electron-like Fermi surface with increasing doping is observed at a doping level of ~0.35. This transition coincides with the change that the sample undergoes superconducting-to-non-superconducting states.Our results reveal the emergence of an electron-like Fermi surface and the existence of a Lifshitz transition in heavily overdoped Bi2201 samples. This provides important information in understanding the connection between the disappearance of superconductivity and the Lifshitz transition in the overdoped region.  相似文献   
5.
High resolution photoemission measurements are carried out on non-superconducting LaFeAsO parent com- pound and various superconducting RFeAs(O1-ZFx) (R=La, Ce and Pr) compounds. It is found that the parent LaFeAsO compound shows a metallic character. By extensive measurements, several common features are identified in the electronic structure of these Fe-based compounds: (1) 0.2 eV feature in the valence band, (2) a universal 13-16 meV feature, (3) near EF spectral weight suppression with decreasing temperature. These uni- versal features can provide important information about band structure, superconducting gap and pseudogap in these Fe-based materials.  相似文献   
6.
We synthesize a series of Mn substituted(Li, Fe)OHFeSe superconductor single crystals via a modified ion-exchange method, with the Mn concentration z(the atomic ratio of Mn:Se) ranging from 0 to 0.07. The distribution homogeneity of the Mn element incorporated into the lattice of(Li, Fe)OHFeSe is checked by combined measurements of high-angleannular-dark-field(HAADF) imaging and electron energy-loss spectroscopy(EELS). Interestingly, we find that the superconducting transition temperature T_c and unit cell parameter c of the Mn-doped(Li, Fe)OHFeSe samples display similar V-shaped evolutions with the increasing dopant concentration z. We propose that, with increasing doping level, the Mn dopant first occupies the tetrahedral sites in the(Li, Fe)OH layers before starting to substitute the Fe element in the superconducting Fe Se layers, which accounts for the V-shaped change in cell parameter c. The observed positive correlation between the T_c and lattice parameter c, regardless of the Mn doping level z, indicates that a larger interlayer separation, or a weaker interlayer coupling, is essential for the high-T_c superconductivity in(Li, Fe)OHFeSe. This agrees with our previous observations on powder, single crystal, and film samples of(Li, Fe)OHFeSe superconductors.  相似文献   
7.
Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.  相似文献   
8.
在四阳极直流放电装置上,测量并分析了辉光放电的电流-电压和发光特征随气压的变化关系。结果表明,采用稳流放电模式比稳压放电具有更宽的稳定放电气压和电流范围,能在从1~800Pa的较宽气压范围内实现氦气辉光放电,放电电流可达到500mA左右。随着电极表面亮斑的变化,对于同一气压,在低电流区,放电电压几乎成指数增长;随电流增大,电压的增长速度变缓;对于高的气压,碰撞频率的增大使得电压随电流升高的速率变小。分析表明,放电处于异常辉光区。从放电管的CCD图像可以看出,对于同一放电电流,随气压的升高,等离子体往阴极收缩。  相似文献   
9.
许波 《物理通报》2004,(10):25-27
介绍中学物理演示实验的类型,提出设计的基本要求及探讨实验教学的基本程序。  相似文献   
10.
采用X射线衍射(XRD),氢气程序升温还原(H2-TPR)和无氧脉冲反应评价等研究了MoO3在γ-Al2O3载体表面的分散状态和负载型MoO3/γ-Al2O3催化剂晶格氧物种的丙烷氧化脱氢反应性能.结果表明在γ-Al2O3表面MoO3分散容量的实测值(4.73Mo6 /nm2)与按照"嵌入模型"估算的理论分散容量(4.90 Mo6 /nm2)接近.在分散容量以下,键合在γ-Al2O3表面孤立的Mo-O-Al物种倾向于分散在相邻的空位上且通过Mo-O-Mo化学键相连形成聚合的表面MoOx物种.随着MoO3负载量增加,Mo-O-Al键合方式逐步转变为Mo-O-Mo键合方式,钼离子周围的氧离子活泼性下降,导致丙烷氧化脱氢反应活性下降.超过分散容量以上的Mo离子以晶相形式存在.由于钼离子表面利用率下降,尤其是多层的晶相氧化钼表面Mo-O-Mo物种难以与载体表面铝离子键合,导致与钼离子相结合的氧离子可移动性下降、反应活泼性降低,催化剂的丙烷氧化脱氢反应活性急剧下降.  相似文献   
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