用于微全分析系统的数字化微流控芯片的研究

研制出一种基于介质上电润湿(electrowetting-on-d ielectric,EWOD)机制的可编程数字化微流控芯片。它采用“三明治”结构:受控离散液滴被夹在两极板之间;下极板以硅为衬底,掺杂多晶硅作为芯片微电极阵列,其上涂覆有Teflon(AF1600薄膜的S iO2作为疏水性介质层;上极板是涂覆有Teflon(AF1600疏水薄膜的透明电极。通过分析数字化微流控系统的基本操作(离散液滴的传输、拆分及混合)的物理机理和模拟优化,在35 V低驱动电压下实现了约0.35μL和0.45μL去离子水离散液滴的传输和合并,并在70 V驱动电压下实现了0.8μL液滴的拆分等操作。     

Demonstration of Four Fundamental Operations of Liquid Droplets for Digital Microfluidic Systems Based on an Electrowetting-on-Dielectric Actuator

An electrowetting-on-dielectric actuator is developed, in which the liquid is sandwiched between top and bottom plates. For the bottom plate, silicon wafer is used as the substrate, the heavily phosphorus-doped polysilicon film is deposited by low pressure chemical vapour deposition as the microelectrode array, and thermally grown SiO2 film as the dielectric layer. The top p/ate is a glass plate covered with transparent and conductive indium tin oxide as the ground electrode. In addition, a Teflon AF1600 film is spun on the surface of both the plates as the hydrophobic layer. The experimental results show that when the gap height between two plates is 133μm, a prototype of the device is capable of creating, transporting, merging and dividing droplets of deionized water in an air environment with a 70V at lOHz voltage pulse. This is also established by simulations using the computational fluidic software of CFD-ACE＋.     

Ti与莫来石陶瓷衬底的界面反应

在抛光的200℃莫来石陶瓷衬底上电子束蒸发淀积200nm的Ti膜，并在高真空中退火，利用二次离子质谱（SIMS）、俄歇电子能谱（AES）和X射线衍射分析（XRD）研究了从200—650℃Ti与莫来石的固相界面反应．结果表明，在淀积过程中，最初淀积的Ti与衬底表面的氧形成Ti—O键，并有微量元素态Al，Si原子析出，界面区很窄；450℃，1h退火后，界面区有所展宽，但变化不大；650℃，1h退火后，界面发生强烈反应，样品主要由TiO＋Ti，Ti₃Al，Ti₃Al＋TiSi₂和莫来石陶瓷衬底四层结构组成 关键词：     

基于介质上电润湿的微流体变焦透镜的研究进展

近年来,微流体变焦透镜的研究已展示出其在光学系统中的应用前景,其中基于介质上电润湿(Electrowet-ting on dielectric,EWOD)的微流体变焦透镜只需改变外加电压便能快速调节透镜焦距,并且具有尺寸小、结构灵活、功耗低、焦距调节范围广等许多突出优点而日益受到注目。在介绍EWOD机理的基础上,综述了目前基于EWOD的微流体变焦透镜的研究进展。     

多孔硅的XPS研究

对两类孔硅样品测量X射线光电子能谱（XPS）：一类为在空气中放置近一年的多孔硅,另一类为HF处理后的具有新鲜表面的多孔硅。通过分析Si2p和O1a芯能级谱可以得到以下结论：新制备的多孔硅表面只有少量的O和F存在,其中氧是以OH^-形式存在,它的形成与清洗过程中F^-被OH^-取代有关。随着放置时间的增加,表面逐渐被氧化,形成正化学计量比的SiO2,而随着从表层向内的深入,逐渐变为次氧化物。结果表明刚制备的多孔硅与大气中放置氧化后的样品表面态的类型是不一致的。     

Cr-AlN界面的二次离子质谱研究

采用电子束蒸发的方法在２００℃抛光的氮化铝（ＡｌＮ）陶瓷衬底上淀积２００ｎｍ的Ｃｒ膜，并在高真空中退火。利用ＭＣｓ＋－ＳＩＭＳ技术（在Ｃｓ＋一次离子轰击下检测ＭＣｓ＋型二次离子）对样品进行了深度剖析，给出了界面组分分布随退火温度与时间的变化关系。结果表明，ＭＣｓ＋－ＳＩＭＳ技术是研究金属－陶瓷界面扩散与反应的有效方法。     

微流控光学器件与系统的研究进展

微流控技术作为微全分析系统的关键与核心,一直是MEMS领域中的一个研究重点。随着微流控技术水平的不断提高以及与其它学科的不断渗透与融合,近年来已经涌现出一批令人注目的研究热点,其中微流控光学器件就是其典型代表。微流控技术与光学器件的融合,为传统光学器件的微型化、阵列化、低成本化以及高精度控制提供了可能。叙述了一些基于微流控技术的可变焦光透镜、显示器件、光开关、以及可调光纤光栅等新型光学器件的近期研究成果和应用背景。     

Blue-Green Light Emission from a-SiCx：H-Based Fabry-Perot Microcavities

A Si-based novel Fabry-Perot microcavity device that can emit blue-green light at room temperature is proposed and fabricated, One of its Bragg reflectors consists of periodically stacked a-SiO2/a-Si：H layers deposited on the glass by plasma enhanced chemical vapour deposition, The other reflector is a sputtered Al film, The active region between both the reflectors is constructed by a p-type a-SiCx：H/intrinsic-type a-SiCx ：H junction fromwhich the electroluminescence （EL） is originated. The EL spectra of this device are recorded by RENISHAW RM2000, a sharp and strong EL peak at 483nm with FWHM of 20nm is observed when the device is driven by dc voltages of 8 V, 12 V and 18 V at room temperature. The intensity of EL increases with the applied voltage while the luminescence wavelength keeps unchanged. Compared with the EL spectra from the sample without the Bragg reflector, the luminescence intensity is about 10 times enhanced and the peak is narrowed greatly. The luminescence mechanism is analysed in detail.     

Integrated a-Si：B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

A monolithic uncooled 8 × 8 microbolometer array with is presented. The a-Si：B film was deposited by plasma boron-doped a-Si （a-Si：B） thermistors as active elements enhanced chemical vapour deposition. To decrease the thermal conductance of the microbolometer, a-Si：B thermistor was formed on a four-leg suspended microbridge. The improved porous silicon micromachining techniques described here enable the integration of the sensor array with the metal oxide-semiconductor readout circuitry. The sacrificial material of porous silicon is prepared in the first step. It is then well protected all the time during the fabrication of metal-oxide-semiconductor field effect transistors and microbolometers before being released. Measurements and calculations show that the uncorrected uniformity of the 8 × 8 microbolometer array is about 4.5%, and the detectivity of 2.17 × 10^8 cm Hz^1/^2W^-1 is achieved at a chopping frequency of 30 Hz and a bias voltage of 5 V with a thermal response time of 12.4 ms.