Ti薄膜与AlN陶瓷的界面反应

用X射线衍射分析、二次离子质谱、卢瑟福背散射谱、俄歇电子能谱等表面分析技术，研究了Ti膜与AlN陶瓷衬底的界面固相反应-在高真空中用电子束蒸发的方法在抛光的200℃ AlN陶瓷衬底上淀积200nm的Ti膜，并在真空恒温炉中退火-实验表明，退火中Ti膜与AlN界面发生了扩散与反应-650℃，1h退火已观测到明显的界面反应-界面反应产物主要是钛铝化物及Ti-N化合物-铝化物是Ti-Al二元化合物和Ti-Al-N三元化合物，850℃，4h退火后则主要由Ti₂AlN组成- 关键词：     

TiAl/Ti3Al体系剪切变形的分子动力学研究

利用分子动力学方法研究了正化学比的TiAl/Ti₃Al双相体系中剪切变形诱发位错形核以及相关结构转变的动态过程以及切变力场对最终结构的影响.研究发现,在TiAl/Ti₃Al双相体系中剪切变形诱发黏滞-滑移式的滑移行为;界面在其中起到了传递能量、均衡协变的作用,界面两侧的异相结构保留了单相形变特征.六角密堆积（HCP）-Ti₃Al部分各原子层较长时间内呈整体剪切协变,其后形变分化为应力集中诱发层错区和初始完整结构回复区;而面心立方（FCC）-TiAl部分因刚性较大仅存在微协变,其后局部受力区直接诱发相邻原子层间相对滑移,发生FCC向HCP结构转变.变形结构方面,HCP-Ti₃Al部分在剪切力较大区域形成连续且稳定的FCC堆垛,近界面区FCC薄层与HCP相交替并存;而FCC-TiAl部分内禀层错和孪晶共存,当力场增大时形成亚稳HCP结构. 关键词： 3Al')" href="#">TiAl/Ti₃Al 分子动力学模拟 剪切变形 层错结构     

Ti-Al金属间化合物结构与性质的第一性原理模拟

采用软件CASTEP模拟Ti-Al金属间化合物的晶体结构、力学性质和电子性质.分析在0 K、0 GPa时,Ti-Al存在的四种热力学稳定结构：TiAl₃、TiAl₂、TiAl、Ti₃Al,发现TiAl₃、TiAl₂、TiAl可以看作由Al的面心立方结构衍化而来,而Ti₃Al的结构与Ti相似,为密排六方结构.随着Ti摩尔分数的增加,TiAl₃、TiAl₂、TiAl、Ti₃Al的体模量相当,剪切模量和Vickers硬度逐渐减小;Pugh比k值也逐渐减小,表示韧性逐渐变好.最后对态密度、Mulliken布居分析等进行模拟,发现这四种结构Ti-Al键都具有金属性、共价性及弱的离子性.     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光     

Si(113)表面原子结构的低能电子衍射研究

利用低能电子衍射(LEED)研究了离子轰击加退火处理的和淀积外延的两种Si(113)表面的原子结构。发现对于经750—800℃退火后的两种Si(113)表面,当其温度高于600℃时存在1×1非再构表面相。随着样品温度缓慢地冷却至室温,Si(113)-1×1表面经过3×1(约600—400℃)最后转变为3×2再构。当退火温度为600℃时,则只出现3×1再构,室温下的3×2和3×1表面都是很稳定的。讨论了表面杂质对Si(113)表面原子结构的影响。在衬底温度为580℃的Si(113)表面上进行淀积生长,当外延 关键词：     

前驱体和退火温度对Nd2O3薄膜组分影响的定量研究

采用Nd(thd)₃和O₃作为反应前驱体, 利用先进的原子层淀积方法在P型硅(100)衬底上制备了超薄Nd₂O₃介质膜, 并在N₂气氛下进行了退火处理. 采用X射线光电子能谱仪对薄膜样品组分进行分析. 研究结果表明, 淀积过程中将前驱体温度从175 ℃提高到185 ℃后, 薄膜的质量得到提高, O/Nd 原子比达到1.82, 更接近理想的化学计量比, 介电常数也从6.85升高到10.32.     

Ti和蓝宝石的界面反应

在超高真空中用电子束蒸发在抛光的(1102)取向的蓝宝石(α-Al₂O₃)衬底上蒸镀500nm的Ti膜,在恒温炉中退火,然后用XRD(包括一般的和小角度的X射线衍射),AES(俄歇电子谱,包括深度剖面分布和通过界面的谱形分析)和SIMS(二次离子质谱)等表面分析技术详细研究了从室温至850℃,Ti与α-Al₂O₃的固相界面反应.结果表明室温及300℃,30min退火已有反应,Al₂O_{3< 关键词：}     

淀积气压对脉冲激光淀积La掺杂钛酸铅薄膜介电性能的影响

利用脉冲激光淀积法在Pt/Ti/SiO2/Si衬底上制备了28mol%La掺杂钛酸铅薄膜.采用不同的淀积氧气压，并分析了其对薄膜微观结构和介电性能的影响.结果表明，在2Pa左右的气压下淀积的薄膜具有好的结晶度和介电系数.在频率为10kHz时28mol%La掺杂钛酸铅薄膜的介电系数达852，并且保持了较低的损耗.同时制备了其他La掺杂浓度的PbTiO3薄膜，发现它们也有类似的特点.对此作了定性解释. 关键词： 脉冲激光淀积 PLT薄膜 气压 介电增强     

PECVD a-SiNx:H薄膜中的氢分布

用红外光谱、质子核磁共振谱对以SiH₄/NH₃/N₂混合气体为源、用等离子体增强化学气相淀积法淀积的非晶氢化氮化硅(a-SiNx:H)薄膜进行了分析,结果表明膜中H以Si-H和N-H形式存在,均呈集聚和疏散两种分布状态,衬底温度影响氢的总量和分布均匀性,射频功率显著影响[N-H]/[Si-H],退火后氢仍呈集聚和疏散两种分布.     

火焰水解淀积Si02膜的退火研究

本文采用火焰水解法在Si衬底上淀积了用于光波导下包层材料的SiO2膜，然后将其放入高温炉在空气中进行不同温度的退火处理。我们利用原子力量微镜（AFM）、X射线光电子能谱（XPS），X射线衍射仪（XRD）及可变入射角椭圆偏振仪（VASE）对SiO2膜进行了测试分析。当退火温度达到1400℃时，SiO2膜致密均匀，适合用作波导的下包层。     

The competitive growth of cubic domains in Ti1–xAlxN films studied by diffraction anomalous near‐edge structure spectroscopy

Titanium and aluminium nitride films deposited by magnetron sputtering generally grow as columnar domains made of oriented nanocrystallites with cubic or hexagonal symmetry depending on Al content, which are embedded in more disordered grain boundaries. The substitution of Al atoms for Ti in the cubic lattice of the films improves their resistance to wear and oxidation, allowing their use as protective coatings. Ti K‐edge X‐ray absorption spectroscopy, which probes both crystallized and more disordered grain boundaries, and X‐ray diffraction anomalous fine structure, which is sensitive to short‐ and long‐range order within a given crystallized domain, are carried out on a set of Ti_1–xAl_xN films deposited by magnetron sputtering on Si substrates. Attention is paid to the shape of the pre‐edge region, which is sensitive to the symmetry of the site occupied by Ti atoms, either octahedral in face‐centred‐cubic Ti‐rich (TiN, Ti_0.54Al_0.46N) samples or tetrahedral in hexagonal‐close‐packed Al‐rich (Ti_0.32Al_0.68N) films. In order to obain information on the titanium environment in the well crystallized areas, subtraction of the smooth part of the energy‐dependent structure factor for the Bragg reflections is applied to the pre‐edge region of the diffraction anomalous data in order to restore their spectroscopic appearance. A flat pre‐edge is related to the typical octahedral environment of Ti atoms for cubic reflections. The difference observed between pre‐edge spectra associated with face‐centred‐cubic 200 and 111 Bragg reflections of Ti_0.54Al_0.46N is assigned to Ti enrichment of 111 large well ordered domains compared with the more disordered 200 ones. The sharp peak observed in the spectrum recorded from the hexagonal 002 peak of Ti_0.32Al_0.68N can be regarded as a standard for the pure tetrahedral Ti environment in hexagonal‐close‐packed nitride.     

真空热退火温度对单相Ag2O薄膜微结构和光学性质的影响

利用直流磁控反应溅射技术在玻璃衬底上沉积了单相Ag₂O薄膜,并采用真空热退火对单相Ag₂O薄膜在不同热退火温度 (T _{A) 下进行了1 h热处理.利用X射线衍射谱、扫描电子显微镜和分光光度计研究了 T A对单相Ag2O薄膜微结构和光学性质的影响.研究结果表明, T}A= 300 ℃ 时Ag₂O薄膜中开始出现Ag纳米颗粒,且随着 T _{A的升高薄膜中Ag的含量 关键词： 2}O薄膜')" href="#">Ag₂O薄膜 热退火温度 微结构 光学性质     

Metal contacts to n-GaN

Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 °C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 °C. The surface of Au and Ti/Au contacts annealed at 900 °C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact revealed that Au diffused into the n-GaN layer at 900 °C. X-ray diffraction examinations showed, that new Ti₂N, Au₂Ga and Ga₃Ti₂ interface phases formed in Ti/Au contact at 900 °C, new Ti₂N phase formed in Ti/Al contact at 700 and 900 °C, as well as new AlN interface phase developed in Ti/Al contact at 900 °C.     

硅衬底GaN基LED N极性n型欧姆接触研究

在Si衬底GaN基垂直结构LED的N极性n型面上,利用电子束蒸发的方法制作了Ti/Al电极,通过了I-V曲线研究了有无AlN缓冲层对这种芯片欧姆接触的影响.结果显示,去除AlN缓冲层后的N极性n型面与Ti/Al电极在500到600 ℃范围内退火才能形成欧姆接触.而保留AlN缓冲层的N极性n型面与Ti/Al电极未退火时就表现为较好的欧姆接触,比接触电阻率为2×10^-5 Ω·cm²,即使退火温度升高至600 ℃,也始终保持着欧姆接触特性.因此,AlN缓冲层的存在是Si衬底GaN基垂直结构LED获得高热稳定性n型欧姆接触的关键. 关键词： 硅衬底 N极性 AlN缓冲层 欧姆接触     

Interfacial reactions of rf-sputtered TiNi thin films on (100) silicon with a SiN diffusion barrier

Silicon nitride (SiN) with a 50?nm thickness on Si(100) as a thermal barrier was obtained by plasma-enhanced chemical vapour deposition (PECVD). TiNi thin films were rf sputtered on a SiN/Si substrate and then annealed at 400–700°C for 30?min. Their interfacial reactions were studied using transmission electron microscopy, X-ray diffraction and Auger electron spectroscopy analyses. Experimental results show that the thickness of reaction layer in TiNi/SiN/Si specimens is clearly reduced, compared with that in TiNi/Si specimens under the same annealing conditions. The significant effect of the SiN layer as a diffusion barrier in TiNi/SiN/Si can be recognized. N and Si atoms diffuse from the SiN layer to react with TiNi films at 500°C and 600°C respectively. The TiN_{1 ? x} phase is formed in specimens annealed at 500°C, and mixed Ti₂Ni₃Si and Ti₄Ni₂O compounds are found at 600°C. In the specimen annealed at 700°C, the reaction layer has sublayers in the sequence TiNi/Ti₄Ni₂O/Ti₂Ni₃Si/TiN_{1 ? x} /SiN/Si. The SiN thermal barrier obtained by PECVD caused quite different diffusion species to cross the interfaces between TiNi/SiN/Si and TiNi/Si specimens during the annealing.     

Structural evolution of ZrO2–mullite nanocomposites from the Si–Al–Zr–O amorphous bulk

ZrO₂–mullite nanocomposites were fabricated by in-situ-controlled crystallization of Si–Al–Zr–O amorphous bulk at 800–1250°C. The structural evolution of the Si–Al–Zr–O amorphous, annealed at different temperatures, was studied by X-ray diffraction, infrared, Laser Raman spectroscopy, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. The materials consisted of an amorphous phase up to 920°C at which phase separation of Si-rich and Al, Zr-rich clusters occurred. The crystalline phases of t-ZrO₂ and mullite were observed at 950°C and 1000°C, respectively. Mullite with a tetragonal structure, formed by the reaction between Al–Si spinel and amorphous silica at low temperature, changed into an orthorhombic structure with the increase of temperature. It was the phase segregation that improved crystallization of the Si–Al–Zr–O amorphous bulk. The anisotropic growth of mullite was observed and the phase transformation from t-ZrO₂ to m-ZrO₂ occurred when the temperature was higher than 1100°C.     

两种不同(Ba,Sr)TiO3薄膜介电-温度特性的研究

研究并比较了两种不同(Ba_0.5,Sr_0.5)TiO₃(BSTO)薄膜介电-温度特性.采用脉冲激光沉积技术在Pt/Ti/SiO₂/Si(100)衬底上制备BSTO薄膜，发现制备条件的不同，可以得到介电性质完全不同的BSTO薄膜.在550℃和氮气氛下制备的BSTO薄膜在常温下具有很高的介电常数，在10kHz下，超过2500，并在200K温度以上介电常数基本不变.它的一些电学性质不同于在正常条件(650℃和氧气氛下)制得的BSTO薄膜，而类似于目前广泛报道的巨介电常数材料如CaCu_３Ti_４O₁₂.两种薄膜介电性质测试结果表明: 氧气氛下制备的BSTO薄膜呈现铁电-顺电相变，符合居里-外斯定律；低温氮气氛下制备的BSTO薄膜，介电弛豫时间和温度的关系符合德拜模型，是热激发弛豫.文中给出了产生这种介电特性的初步解释. 关键词： 薄膜 脉冲激光沉积 介电弛豫     

Nanoscale Analysis of Multilayer Interfaces of W/Al2O3/Ti/Cu

W, Al₂O₃ and Ti films were deposited onto a Cu substrate by means of the rf magnetron sputtering method. After deposition, the foils were annealed at various temperatures in vacuum and the interfaces of the films were observed by a field-emission transmission electron microscopy (FE-TEM), after preparing a cross-sectional thin foil using a focused ion beam (FIB) machine. After annealing the foil at 473 and 623 K, no reaction phases were identified at each interface of W/Al₂O₃, Al₂O₃/Ti and Ti/Cu-substrate. However, from the results of compositional analysis at the interface of Al₂O₃/Ti bilayer, after heat-treatment at 623 K, the formation of an oxide layer was suggested even though it was not clearly observed. On the other hand, after heat-treatment at 823 K, the formation of CuTi₂, Cu₃Ti₂ and Cu₄Ti phases were identified at the interface of Ti/Cu bilayers from the compositional analysis of reaction layers after heat-treatment at different temperatures, and the diffusion coefficients and activation energies in the phases were evaluated. In this paper, the influence of heat-treatment on the interfacial behavior of multilayer are discussed on the basis of nanoscale analysis by EDS and HRTEM images.