Ti与莫来石陶瓷衬底的界面反应

在抛光的200℃莫来石陶瓷衬底上电子束蒸发淀积200nm的Ti膜，并在高真空中退火，利用二次离子质谱（SIMS）、俄歇电子能谱（AES）和X射线衍射分析（XRD）研究了从200—650℃Ti与莫来石的固相界面反应．结果表明，在淀积过程中，最初淀积的Ti与衬底表面的氧形成Ti—O键，并有微量元素态Al，Si原子析出，界面区很窄；450℃，1h退火后，界面区有所展宽，但变化不大；650℃，1h退火后，界面发生强烈反应，样品主要由TiO＋Ti，Ti₃Al，Ti₃Al＋TiSi₂和莫来石陶瓷衬底四层结构组成 关键词：

INTERFACIAL REACTION OF Ti AND MULLITE-CERAMIC SUBSTRATE

A 200nm Ti film was deposited on a polished mullite ceramic substrate at 200℃ by electron beam evaporation,and annealed under high vacuum conditions.Secondary ion mass spectrometry (SIMS),Auger electron spectroscopy (AES) and X-ray diffraction measurement (XRD) were employed to probe the solid interfacial reaction between Ti and mullite from 200—650℃ for the first time.The results show that the first deposited Ti atoms have formed Ti—O bond with O on mullite surface during the deposition,and trace elemental Al and Si atoms have been segregated,but interfacial range is very narrow.It was broadened a little after the sample annealed at 450℃ for an hour.Interfacial reaction happened violently when the annealing temperature was 650℃ for an hour,and the sample mainly consisted of four laminated structures which in turn were TiO+Ti,Ti₃Al,Ti₃Al+TiSi₂ and mullite ceramic substrate.