| Integrated a-Si：B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques |
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| 引用本文： | 岳瑞峰,董良,刘理天.Integrated a-Si：B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques[J].中国物理快报,2006,23(5):1331-1334. |
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| 作者姓名： | 岳瑞峰 董良 刘理天 |
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| 作者单位： | Institute of Microelectronics, Tsinghua University, Beijing 100084 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 59995550-1. |
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| 摘 要： | A monolithic uncooled 8 × 8 microbolometer array with is presented. The a-Si：B film was deposited by plasma boron-doped a-Si （a-Si：B） thermistors as active elements enhanced chemical vapour deposition. To decrease the thermal conductance of the microbolometer, a-Si：B thermistor was formed on a four-leg suspended microbridge. The improved porous silicon micromachining techniques described here enable the integration of the sensor array with the metal oxide-semiconductor readout circuitry. The sacrificial material of porous silicon is prepared in the first step. It is then well protected all the time during the fabrication of metal-oxide-semiconductor field effect transistors and microbolometers before being released. Measurements and calculations show that the uncorrected uniformity of the 8 × 8 microbolometer array is about 4.5%, and the detectivity of 2.17 × 10^8 cm Hz^1/^2W^-1 is achieved at a chopping frequency of 30 Hz and a bias voltage of 5 V with a thermal response time of 12.4 ms.
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| 关 键 词： | 微测辐射热仪阵列 多孔渗水硅 显微加工技术 半导体物理 |
| 收稿时间： | 2006-02-08 |
| 修稿时间： | 2006-02-08 |
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