LYVE-1 在甲状腺乳头状癌的表达和意义

目的 观察淋巴管透明质酸受体1（LYVE-1）的表达和癌周组织中淋巴管的生成情况在甲状腺恶性肿瘤的变化及转 移中的作用。方法 应用免疫组织化学和real-time PCR方法检测45 例甲状腺乳头状癌中央区、癌周边区和正常甲状腺组织中的LYVE-1及其mRNA 表达情况,并计算淋巴管密度（LVD）。结果 甲状腺乳头状癌周边区LVD 高于甲状腺乳头状癌中央区,而正常组织中很少见LYVE-1 阳性的微淋巴管;甲状腺乳头状癌周边区LVD 与淋巴结转移有密切关系（P＜0.05）。结论 LYVE-1是一种特异性较高的淋巴管内皮特异性标志物,对淋巴管生成促进甲状腺乳头状癌的淋巴结转移。     

CrN镀层的微粒磨损性能及其切削行为研究

在Teer UDP 550型闭合场非平衡磁控溅射离子镀设备上制备CrN镀层,以球-盘方法测定的比磨损率和微粒磨损法测定的微粒磨损率评价CrN镀层的耐磨性能,采用高速钢镀层钻头的钻孔数评价镀层的切削性能.结果表明,CrN镀层的微粒磨损率对氮流量(用光谱发射因子OEM值控制)的变化很敏感,而比磨损率却不能反映这种由于氮流量变化带来的镀层结构和性能的变化.在不同偏压条件下所制备的镀层微粒磨损率变化不明显.当微粒磨损率低于某一值时,CrN镀层的钻孔寿命明显提高,而比磨损率则无此规律.     

新型2-吡啶苄基胺类罗丹明基活性小分子探针的合成

以罗丹明B和乙二胺为原料,通过缩合反应制得罗丹明酰乙二胺(1, Rhb);然后以无水THF作溶剂,化合物1与三聚氯嗪发生亲核取代反应,得到罗丹明酰乙二胺-三聚氯嗪化合物(2, Rhbc);最后在氮气氛围下,化合物2与N,N-二甲基吡啶胺反应合成了目标产物双(2 吡啶苄基) 胺罗丹明基小分子探针(3, Rhbd),其结构经¹H NMR、 IR、 HR-MS和元素分析表征。该探针可以识别Fe³⁺,检出限为30 nM。     

2,7-二硝基-9,9-二辛基芴的合成工艺改进

以芴(1)为原料,浓硝酸/浓硫酸为硝化剂,合成了2,7-二硝基-9,9-二辛基芴,其结构经1H NMR和IR确证。最佳反应条件为:1 20 mmol,n(1):n(HNO3)=1:18,c(H2SO4)=15.3 mol.L-1,于10℃反应7 h,收率56%。     

Syntheses and Crystal Structures of Two Tin(Ⅳ) Complexes with Aminosilane Bearing Ligand

Aminosilane bearing bulky substituents on nitrogen: LH2(L=Me2Si(NDipp-)2 , Dipp=2,6-diisopropylphenyl) was reacted with BuLi in toluene. The resulting bulky chelating dianion Me2Si(NDipp-)2 was used to synthesize the unusual spirocyclic heterotriatomic complex [Me2Si(NDipp)2]2Sn (1) by its reaction with SnCl4 and the bulky heterotriatomic complex Me2Si(NDipp)2SnPh2 (2) with Ph2SnCl2.1 belongs to the monoclinic system, space group P21/n with a=13.193(2), b=20.663(3), c=20.403(3), β=99.954(2)o, V=5478.3(15)3 , C55H85.5N4Si2Sn, Mr=977.64, Z=4, Dc=1.185Mg/m3 , μ(MoKα)=0.547mm-1 , F(000)=2086, S=1.000, the final R=0.0614 and wR=0.1322 for 14446 observed reflections (I2σ(I)) and R=0.0797 and wR=0.1456 for all data. 2 belongs to the triclinic system, space group Pī with a=10.36(15), b=13.204(7), c=14.363(7), α=90.214(10), β=106.182(7), γ=109.854(8)o, V=1764.4(15)3 , C38H50N2SiSn, Mr=681.58, Z=2, Dc=1.283 Mg/m3 , μ(MoKα)=0.785 mm-1 , F(000)=712, S=1.002, the final R=0.0498 and wR=0.0955 for 7533 observed reflections (I2σ(I)) and R=0.0676 and wR=0.1018 for all data. In the structure of 1, the tin atom is located in the spirocyclic center of the two fused four-membered SnN 2 Si rings. The two complexes were characterized by 1H NMR, elemental analysis, and single-crystal X-ray structural analysis.     

离轴三反测绘相机调焦机构的设计

针对测绘相机对相机成像质量和内方位元素稳定性的要求,在分析3种调焦方式特点的基础上,确定了符合离轴三反测绘相机需要的调焦方式。设计了滚珠丝杠驱动的直线导轨式调焦机构,计算得到调焦机构的灵敏度为0.2μm。对该调焦机构进行了精度检测和试验验证,结果显示其指向精度〈2″,定位精度〈3μm。得到的结果表明：该空间调焦机构具有结构紧凑、刚度高、位移精度好等特点,能够满足离轴三反测绘相机的调焦要求。     

Raman spectrum study of graphite irradiated by swift heavy ions

Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences： 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 and 3500cm^-1 show that the disorder induced by Sn-ions increases with ion fluence increasing. However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though the latter has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ～ 3-cm^-1frequency shift toward lower wavenumber for the D band and ～ 6-cm^-1 shift toward lower wavenumber for the 2D band are observed at a fluence of 1×10^14 ions/cm^2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the graphene layers activated by radiation-induced strain around ion tracks. Moreover,the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks locally cause electronic decoupling of neighboring graphene layers.     

各向异性静态随机存储器中的多位翻转分析研究

重离子实验结果表明,具有高线性能量转移(LET)或大角度入射的快重离子导致静态随机存储器(SRAM)中的多位翻转(MBU)比例增大,甚至超过单位翻转比例。单个离子径迹中的电荷可以沿着径向扩散数个微米,被临近的灵敏区收集后引起MBU。器件灵敏区的各向异性空间布局与离子入射方向共同影响测试器件的MBU图形特征。位线接触点的纵向隔离导致横向型成为主要的两位翻转图形;"L"型和"田"型分别是主要的三位翻转和四位翻转图形。最后,对SRAM抗MBU加固设计和实验验证方法进行了讨论。     

柔性有机场效应晶体管研究进展

柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域. 关键词： 柔性 晶体管 有机/聚合物 溶液加工     

III-V族化合物半导体材料的高能重离子辐照效应

用高能（５００ＭｅＶ）Ｎｅ离子束对ＧａＡｓ和ＩｎＰ进行了辐照，用ＭｏｎｔｅＣａｒｌｏ模拟、正电子湮没谱学以及红外光谱研究了辐照产生的缺陷特性．结果表明，在未辐照的样品中存在单空位，经辐照后，可在样品中产生单空位；当剂量较大时，还会形成双空位甚至尺寸较大的空洞．红外光谱测量发现，在辐照后的ＧａＡｓ样品中有非晶区形成．此外，辐照在样品中还产生了反位缺陷ＧａＡｓ和ＩｎＰ以及受主杂质ＺｎＩｎ．对经１０１４ｉｏｎｓ／ｃｍ２剂量辐照的ＩｎＰ进行了光学实验，在辐照后的ＩｎＰ材料中发现了亚稳态中心． Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...