共查询到19条相似文献,搜索用时 109 毫秒
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柔性有机非易失性场效应晶体管存储器具有柔性、质轻、成本低、可低温及大面积加工等优点,在射频识别标签、柔性存储、柔性集成电路和大面积柔性显示等领域展现出巨大的应用前景.本文在介绍柔性有机非易失性场效应晶体管存储器的衬底材料、器件结构和性能参数的基础上,总结了柔性有机非易失性场效应晶体管存储器的分类,并讨论了机械应力和不同温度对柔性有机非易失性场效应晶体管存储器性能参数的影响,最后展望了柔性有机非易失性场效应晶体管存储器的应用前景以及所面临的挑战. 相似文献
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采用聚合物共混的方法制备了体异质结薄膜,将其作为光敏半导体层制备了有机场效应光晶体管.利用原子力显微镜表征了共混薄膜的分相情况,探究了器件提高激子解离效率的机理,并对比了聚合物共混前后有机场效应晶体管的光电性能变化和相分离情况.结果表明:制备的聚合物共混光晶体管在微弱光线条件下(0.038 mW/cm2,808 nm)具有较高的光敏性(为106).通过共混聚合物半导体材料制备体异质结薄膜可以有效地提高激子解离的效率,通过双层绝缘层能进一步降低光晶体管的暗电流,从而提高器件的光敏性. 相似文献
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制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al, Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比Ion/Ioff等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移.
关键词:
有机场效应晶体管
CuI/Al双层源漏电极
电子转移 相似文献
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生物感知系统具有高并行、高容错、自适应和低功耗等独特优点.采用神经形态器件实现生物感知功能的仿生,在脑机接口、智能感知、生物假体等领域具有重大应用前景.与其他神经形态器件相比,多端口神经形态晶体管不仅可以同时实现信号的传输和训练学习,还可以对多路信号进行非线性的时空整合与协同调控.然而,传统刚性神经形态晶体管很难实现弯曲变形以及和人体密切贴合,限制了神经形态器件应用范围.所以,具有良好弯曲特性的柔性神经形态晶体管的研究成为了最近的研究重点.本文首先介绍了多种柔性神经形态晶体管的研究进展,包括器件结构、工作原理和基本功能;另外,本文还将介绍上述柔性神经形态晶体管在仿生感知领域中的应用;最后给出上述研究领域的总结和简单展望. 相似文献
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为了进一步洞悉高分子薄膜自组织机理和高分子有机场效应晶体管(OFET)载流子迁移率之间的直接关联性,本工作采用先进的同步辐射掠入射X射线衍射(GIXRD)技术,研究了高分子OFET中高分子半导体高度区域规则的聚(3-己基噻吩)(RR-P3HT)工作层薄膜,由不同退火温度所导致的薄膜自组织微观结构的变化.GIXRD测试实验结果显示了,对于不同高分子薄膜制备方法(旋涂法及滴膜法)及不同溶液浓度(RR-P3HT溶液浓度为2.5 mg/ml及3.5 mg/ml)制备的RR-P3HT有机半导体工作层,在氮气气氛下,
关键词:
高分子有机场效应晶体管
同步辐射掠入射X射线衍射
自组织
退火 相似文献
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《物理学报》2020,(13)
铁电负电容场效应晶体管可以突破传统金属氧化物半导体场效应晶体管中的玻尔兹曼限制,将亚阈值摆幅降低到60 m V/dec以下,极大地改善了晶体管的开关电流比和短沟道效应,有效地降低了器件的功耗,为实现晶体管特征尺寸的减小和摩尔定律的延续提供了选择.本文分析总结了国内外近年来关于铁电负电容场效应晶体管代表性的研究进展,为进一步研究提供参考.首先介绍了铁电负电容场效应晶体管的研究背景及其意义;然后总结了铁电材料的基本性质和种类,并对铁电材料负电容的物理机制和铁电负电容场效应晶体管的工作原理进行了讨论;接下来从器件沟道材料维度的角度,分别总结了最近几年基于三维沟道材料和二维沟道材料且与氧化铪基铁电体结合的铁电负电容场效应晶体管的研究成果,并对器件的亚阈值摆幅、开关电流比、回滞电压和漏电流等性能的改善进行了分析概述;最后对铁电负电容场效应晶体管目前存在的问题和未来的发展方向作了总结与展望. 相似文献
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Xinan Guo Feifei Xing Fei Hong Jianhua Zhang Bin Wei Jun Wang 《Current Applied Physics》2010,10(1):89-92
Organic field-effect transistors (OFETs) were fabricated based on double active layers structure. Different substrate temperatures and thermal treatment were adopted to prepare double active layers and optimize film morphology. The grain size of organic films can be effectively controlled by the change in substrate temperature in the process of deposition. An improved device performance was obtained compared with conventional single layer devices. This result is attributed to the introduction of double active layers. We believe that this kind of optimization will simultaneously improve charge injection and transportation of OFETs. 相似文献
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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide 下载免费PDF全文
Fabrication of ambipolar organic field-effect transistors (OFETs) is
essential for the achievement of an organic complementary logic
circuit. Ambipolar transports in OFETs with heterojunction
structures are realized. We select pentacene as a P-type material and
N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic
diimide (PTCDI-TFB) as a n-type material in the active layer of the
OFETs. The field-effect transistor shows highly air-stable ambipolar
characteristics with a field-effect hole mobility of
0.18~cm2/(V.s) and field-effect electron mobility of
0.031~cm2/(V.s). Furthermore the mobility only slightly
decreases after being exposed to air and remains stable even for
exposure to air for more than 60 days. The high electron affinity of
PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly
monolayer between the SiO2 gate dielectric and the organic
active layer result in the observed air-stable characteristics of
OFETs with high mobility. The results demonstrate that using the OTS
as a modified gate insulator layer and using high electron affinity
semiconductor materials are two effective methods to fabricate OFETs
with air-stable characteristics and high mobility. 相似文献
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Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of OFETs with polymeric dielectric on the flexible substrate was proposed. The desired polymeric semiconductor patterns were fabricated on the flat polydimethylsiloxane (PDMS) surface with a selective lift-off method we proposed previously. The isolated and well defined polymeric semiconductor patterns left on the flat PDMS surface can be further transferred to the gate polymeric dielectric surface by polymer bonding lithography due to the low interfacial energy of PDMS. The transistor fabricated with this ‘dry’ process has a higher field-effect mobility compared with that using spin coated semiconductor layer. 相似文献
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Sean Garner Scott Glaesemann Xinghua Li 《Applied Physics A: Materials Science & Processing》2014,116(2):403-407
As displays and electronics evolve to become lighter, thinner, and more flexible, the choice of substrate continues to be critical to their overall optimization. The substrate directly affects improvements in the designs, materials, fabrication processes, and performance of advanced electronics. With their inherent benefits such as surface quality, optical transmission, hermeticity, and thermal and dimensional stability, glass substrates enable high-quality and long-life devices. As substrate thicknesses are reduced below 200 μm, ultra-slim flexible glass continues to provide these inherent benefits to high-performance flexible electronics such as displays, touch sensors, photovoltaics, and lighting. In addition, the reduction in glass thickness also allows for new device designs and high-throughput, continuous manufacturing enabled by R2R processes. This paper provides an overview of ultra-slim flexible glass substrates and how they enable flexible electronic device optimization. Specific focus is put on flexible glass’ mechanical reliability. For this, a combination of substrate design and process optimizations has been demonstrated that enables R2R device fabrication on flexible glass. Demonstrations of R2R flexible glass processes such as vacuum deposition, photolithography, laser patterning, screen printing, slot die coating, and lamination have been made. Compatibility with these key process steps has resulted in the first demonstration of a fully functional flexible glass device fabricated completely using R2R processes. 相似文献
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K. Znajdek M. Sibiński A. Kubiak Ł. Ruta Z. Lisik D. Janczak 《Opto-Electronics Review》2019,27(1):32-38
The article shows the comprehensive results of the experiments, conducted in order to select the appropriate metal layers, for back absorber contacts, to apply in flexible, thin-film photovoltaic cells based on cadmium telluride. Preliminary selection of investigated materials was made on the basis of general knowledge and physical data. Deposition techniques, as well as layer parameters, were adjusted to the specific flexible solar cell’s needs. Selected metal layers were deposited either by physical vapour deposition (PVD) or screen-printing method (SP) and tested in terms of their flexibility, thermal resistance, as well as adhesion to CdTe layer. Practical verification of selected configurations is proved by the complete construction of the device. 相似文献
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《Current Applied Physics》2018,18(11):1415-1421
Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density >280 mA/cm2 at Vd = 5 V. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application. 相似文献
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The paper reviews the recent year publications concerning organic field-effect transistors (OFETs). A lot of works have been
performed to help understanding the structural and electrical properties of materials used to construct OFETs. It has been
established that in partially ordered systems, the charge transport mechanism is thermally activated and field-assisted hopping
transport and the hopping transport between disorder-induced localized states dominate over intrinsic polaronic hopping transport
seen in organic single crystals. Many research attempts have been carried out on the design of air-stable organic semiconductors
with a solution process which is capable of producing OFETs with excellent properties and good stability when subjected to
multiple testing cycles and under continuous electrical bias. Recent experiments have demonstrated ambipolar channel conduction
and light emission in conjugated polymer FETs. These achievements are the basis for construction of OLED based displays driven
by active matrix consisting of OFETs. 相似文献
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Formation of Au nano-patterns on various substrates using simplified nano-transfer printing method 总被引:1,自引:0,他引:1
Jong-Woo Kim 《Applied Surface Science》2008,254(17):5607-5611
For future device applications, fabrication of the metal nano-patterns on various substrates, such as Si wafer, non-planar glass lens and flexible plastic films become important. Among various nano-patterning technologies, nano-transfer print method is one of the simplest techniques to fabricate metal nano-patterns. In nano-transfer printing process, thin Au layer is deposited on flexible PDMS mold, containing surface protrusion patterns, and the Au layer is transferred from PDMS mold to various substrates due to the difference of bonding strength of Au layer to PDMS mold and to the substrate. For effective transfer of Au layer, self-assembled monolayer, which has strong bonding to Au, is deposited on the substrate as a glue layer.In this study, complicated SAM layer coating process was replaced to simple UV/ozone treatment, which can activates the surface and form the -OH radicals. Using simple UV/ozone treatments on both Au and substrate, Au nano-pattern can be successfully transferred to as large as 6 in. diameter Si wafer, without SAM coating process. High fidelity transfer of Au nano-patterns to non-planar glass lens and flexible PET film was also demonstrated. 相似文献
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G. Chaidogiannos F. Petraki N. Glezos S. Kennou S. Ne?p?rek 《Applied Physics A: Materials Science & Processing》2009,96(3):763-767
The class of sodium salts of sulphonated metal phthalocyanines (MePCS
x
, S = SO3Na, x=1–4) was investigated as a p-type channel component in organic field-effect transistors (OFETs). The solubility of these
materials appears to be enhanced compared to their non-sulphonated counterparts (MePCs). We fabricated transistors based on
MePCS
x
varying the central metal atom (Me = Ni, Co, Zn, Al) and we evaluated the dependence of transistor performance on the nature
of the central atom and the degree of sulphonation. The best results were obtained in the case of Ni and low sulphur content.
In this case the mobility value is μ=1.08 cm2 V−1 s−1 and the on/off current ratio ∼103. The degree of sulphonation affects the electric field inside the active film in a way analogous to the case of polyelectrolyte-gated
OFETs. The Na+ counter ions present in the channel contribute to the device characteristics but their concentration should be controlled
in order to optimize device performance. 相似文献