高能重离子辐照的ODS铁素体钢脆化效应研究

与传统的铁素体钢相比,氧化物弥散强化(ODS) 的铁素体钢具有更优的耐高温和抗辐照性能,近年来成为先进核能装置重要的候选结构材料。在HIRFL 的扇聚焦型回旋加速器(SFC) 材料辐照终端,对一种氧化物弥散强化(ODS) 铁素体钢MA956 进行了高能Ne 离子辐照实验,旨在研究级联碰撞损伤和惰性气体原子注入条件下该材料力学性能的变化。利用辐照终端的能量衰减装置将SFC出口123.4 MeV的离子能量分解为介于38.5~121.0 MeV之间的30 个入射能量值,并通过双面辐照在厚度60 μm的样品中均匀产生了损伤。辐照剂量为9x1016 ions/cm2,在样品中的平均位移损伤为0.7 dpa,注入的Ne原子浓度为350 appm。辐照期间样品温度保持在440 ℃附近。对辐照前后的样品分别在室温和500 ℃下进行了小冲杆试验(Small-punchTest),获得了辐照前后样品的加载位移曲线,由此得到该辐照条件下样品的延性损失为18%~26%。通过扫描电子显微镜观察了断口形貌和厚度变化,估算了样品的等效断裂应变和断裂韧性。结果表明,MA956 钢经过高能Ne离子辐照后等延伸率减小,断裂韧性降低,样品发生了一定的脆化。透射电镜结果说明氧化物弥散相界面处微空洞的形成可能是导致脆化的原因。Oxide dispersion strengthened (ODS) ferritic steels have better high-temperature creep rupture strength and higher irradiation resistance than conventional ferritic steels, and show high prominence of application in advance nuclear reactors. Their stability under high-dose radiation conditions needs to be clarified. In the present study, a commercial ODS ferritic steel MA956 were irradiated with high 20Ne ions at a terminal chamber of the Sector-focused Cyclotron (SFC) at HIRFL (Heavy-ion Research Facility in Lanzhou). With the energy gradient degrader of the irradiation chamber, the primary energy (123.4 MeV) of the Ne-ion was dispersed into 30 different energies between 38.5~ 121.0 MeV, which resulted in a plateau distribution of lattice damage in the specimens. The specimens were irradiated from both sides so that the whole 60 m thickness was nearly uniformly damaged. The specimen temperature was maintained around 440 ℃ during the irradiation. The irradiation dose is about 9x1016 ions/cm2, corresponding to a damage level of 0.7 dpa and a Ne concentration of 350 appm. The specimens before and after irradiation were tested with the Small-punch Test technique, at room temperature and 500 ℃, respectively. The fracture morphology was observed by scanning electron microscopy.The results show that MA956 underwent some loss of ductility and fracture toughness after the irradiation with high-energy 20Ne ions. It may be ascribed to the formation of nano-scale cavities at the oxides/matrix interfacesin the ODS steel specimens under irradiation .     

1．55μm InGaAsP／InP应变量子阱激光器的LP－MOCVD生长

本文首次报导了生长温度为５５０℃，以三甲基镓（ＴＭＧａ）和三甲基铟（ＴＭＩｎ）为Ⅲ族源，用低压金属有机物气相沉积（ＬＦＭＯＣＶＤ〕技术，高质量１．６２ｕｍ和１．３ｕｍＩｎＧａＡｓＰ及Ｉｎ０．５７Ｇａ０．４３Ａｓ０．９８Ｐ０．０４／Ｉｎ０．７３Ｇａ０．２７Ａｓ０．６Ｐ０．４量子阶结构的生长，并给出了１．５５ｕｍＧａＡｓＰ／ＩｎＰ分别限制应变量子阱结构激光器的生长条件，激光器于室温下脉冲激射，其阈值电流密度为２．４ｋＡ／ｃｍ２。     

中子辐照GaAs快速退火行为的低温光荧光研究

用低温（１０Ｋ）光荧光（ＰＬ）的方法对中子辐照砷化镓中的缺陷及及嬗变掺杂进行了研究，结果表明：低温ＰＬ实验可观察到中子掺杂效应，嬗变掺杂使近导带旋主增加从而使与ＣＡＳ有关的跃迁峰向低低能移动，辐照剂量较低时，嬗变原子Ｇｅ占居Ｇａ位；当辐照剂量较大时，部分嬗变原子Ｇｅ占居Ａｓ全，在高剂量辐照情况下，经８００℃（２０秒）退火，仍有反位缺陷ＧａＡＳ（Ｅｖ＋２００ｍｅＶ）和复合缺陷ＩＧａ－ＶＡｓ存在，在低     

MeV能量的重离子辐照GaN的HRXRD研究

分别进行了2.3 MeV20 Ne8+ 离子和5.0 MeV84 Kr19+ 离子辐照GaN样品的实验, 并对实验样品进行了HRXRD的分析。结果发现, 随着这两种离子辐照剂量的增大, GaN的HRXRD谱（0002）衍射峰的峰位出现了向小角侧有规律的移动, 并在较高剂量时衍射峰发生分裂。同时, 对衍射峰的峰位的移动和峰形的变化等现象反映的辐照损伤机制进行了研究, 并探讨了电子能损与核能损各自在晶格损伤中的作用。Irradiation experiments of gallium nitride (GaN) with 2.3 MeV20 Ne8+ and 5.0 MeV84 Kr19+ respectively were performed. The irradiated samples were analyzed using the high\|resolution X\|ray diffraction (HRXRD) spectrometry. It was found that the diffraction peak of GaN (0001) exhibited regular shift to smaller diffraction angles with the increase of ion fluence for the both ions, and the diffraction peak split into a few sub\|peaks at higher irradiation dose. Underlying mechanisms of the observed peak shift and split were investigated, the contributions of different energy losses to the damage accumulation in the irradiated GaN were discussed.     

1．55μmInGaAsP及其相应量子阱结构的LP－MOCVD生长

本文研究了用低压金属有机化合物汽相外延（ＬＰ－ＭＯＣＶＤ）技术在（１００）ＩｎＰ衬底上生长ＩｎＧａＡｓｐ体材料及ＩｎＧａＡＰ／ＩｎＰ量子阱结构材料的生长条件。三甲基镓（ＴＭ６３）、三甲基铟（ＴＭｈ）和纯的砷烷（Ａ８Ｈ３）、磷烷（ＰＨ３）分别用作Ⅲ族和Ⅴ族源，在非故意掺杂情况下，ＩｎＧａＡｓＰ材料的载流子浓度为３．６×１０１５ｃｍ－３；在液氦温度和室温下，与ＩｎＰ晶格匹配的ＩｎＧａＡｓＰ光致发光半峰宽分别为１９．２ｍｅＶ和６３ｍｅＶ；对外延层的组分及厚度均匀性分别进行了转靶Ｘ光衍射仪，低温光致发光和扫描电子显微镜分析，对不同阱宽的量子阱结构材料测出了由于量子尺寸效应导致光致发光波长随阱宽增加而红移现象。     

利用HIRFL高能重离子束的核能材料辐照损伤研究

载能重离子与高能中子在材料中能够产生相似的级联碰撞损伤,加之重离子具有大的离位损伤截面和在材料样品中低的感生放射性,载能重离子束成为模拟先进核能装置内部结构材料辐照损伤的重要手段。HIRFL能区的重离子在结构材料中的射程一般远大于晶粒尺寸,因此能够产生材料体损伤,借助小样品技术可以获得材料力学性能变化（尤其辐照脆化）的有用信息,为探讨材料辐照损伤微结构和宏观力学性能变化的关联提供了重要条件。本文简要介绍了近年来我们基于HIRFL高能离子束开展的聚变堆候选材料辐照损伤的研究,包括低活化钢的辐照脆化行为、氧化物弥散强化（ODS）铁素体钢的结构优化对于抗辐照性能的影响、不同载能粒子辐照条件下铁素体/马氏体钢的辐照肿胀数据的关联,以及高能重离子辐照的钨材料中氢同位素的滞留行为。研究表明,结合特殊的测试技术及数据分析方法,高能重离子可作为核能结构材料辐照损伤研究及评估的有效手段。Because of the similarity in cascade damage structure in materials produced by energetic heavy ions and by fast neutrons, and the high displacement rate and low induced radioactivity of samples by heavy ions, heavy ion beam becomes an important tool to simulate radiation damage by energetic neutrons in materials in advanced nuclear energy systems. The ranges of heavy ions provided by HIRFL (Heavy Ion Research Facility in Lanzhou) are generally much larger than the mean dimensions of grains in alloys candidate to advanced nuclear reactors, and is capable of producing radiation damage in bulk scale. It therefore makes possible the evaluation of change of mechanical properties including the radiation induced embrittlement from the irradiated specimens by using miniaturized specimen techniques. In the present paper, we provide an introduction of our recent studies of radiation damage of materials candidate to future fusion reactors by utilizing heavy ion beams in HIRFL.The studies include issues as follows:ductility loss of RAFM steels causes by high-energy Ne ions, impact of oxide dispersoids on the radiation resistance of ODS ferritic steels, correlation of void swelling of ferritic/martensitic steels under different particle irradiation, and behavior of deuterium retention in tungsten under irradiation with high-energy heavy ions. The results show that high-energy heavy ions can be used as a tool to efficiently investigate or evaluate radiation damage in structure materials if combined with some special test techniques and data analysis.     

LP－MOCVD生长InGaAs／InP应变量子阱的研究

本文研究了ＬＰ－ＭＯＣＶＤ对不同ｘ值的Ｉｎ１－ｘＧａｘＡｓ／ＩｎＰ生长条件，并且生长了压缩应变为０．５％三个不同阱宽的ＩｎＧａＡｓ／ＩｎＰ量子阱结构，利用７７ＫＰＬ光谱分析了能级同阱宽的关系，实现最窄阱宽为４．４ｎｍ，最小全半高峰宽为１７．０ｍｅｖ。     

浅杂质注入LEC半绝缘GaAs γ射线辐照缺陷

用深能级瞬态谱（ＤＬＴＳ）和恒温电容瞬态等技术研究了浅杂质注入ＬＥＣ半绝缘ＧａＡｓ的γ射线辐照缺陷。在Ｂｅ－Ｓｉ共注的ＬＥＣ半绝缘ＧａＡｓ中，γ射线辐照引入一电子陷阶Ｅ₂，并且大大增强了原有的Ｅ₀₁（０．２９８）和Ｅ₀₂（０．３４１）等缺陷，同时明显地瓦解了原有的少子陷阱Ｈ₀₃。在单纯注Ｓｉ的ＬＥＣ半绝缘ＧａＡｓ中，γ射线辐阳引进了Ｅ＇₀₁（０．２１６），Ｅ＇₀₂（０．３４１），Ｅ＇₂，Ｅ＇₄和Ｅ＇₅（０．６０８）等缺陷。其中Ｅ₀₁和Ｅ＇₀₁是新发现的和γ辐照有关的ＧａＡｓ缺陷。和低阻衬底同质外延ＧａＡｓ相比，Ｂｅ－Ｓｉ共注ＬＥＣ半绝缘ＧａＡｓ具有较低的γ射线辐照缺陷引入率，与此相反，单纯注Ｓｉ的ＬＥＣ半绝缘ＧａＡｓ具有较高的γ射线辐照缺陷的引入率。 关键词：     

离子注入/辐照引起Al2O3单晶的改性研究

600K温度下用110keV的He^＋,Ne^＋,Ar^＋离子注入及320K温度下用230MeV的^208Pb^27＋辐照Al2O3单晶样品,研究了离子注入和辐照对Al2O3单晶样品结构和光学特性的影响。从测得的光致发光谱可以清楚地看到,所有样品在波长为375,413和450nm处出现了强的发光峰。且所有5×10^16ion／cm^2注入样品的发光峰均最强。经过高能Pb辐照后的样品,在390nm处出现了新的发光峰。透射电镜分析发现在注入氖样品100nm入射深度以内形成了高浓度的小空洞（1-2nm）,在Ne沉积区域有少量大空洞形成。傅立叶变换红外光谱分析发现,波数在460-510cm^-1间的振动吸收带经过离子辐照后展宽,随着辐照量的增大,该振动吸收强度显著减弱。1000—1300cm^-1对应Al-O-Al桥氧伸缩振动模式的吸收带,辐照后向高波数方向移动。对离子注入和辐照对Al2O3单晶样品结构损伤机理进行了初步探讨。Single crystal sapphire （Al2O3 ） samples were implanted at 600 K by He, Ne and Ar ions with energy of 110 keV to doses ranging from 5 × 10^16 to 2× 10^17 ion/cm^2 or irradiated at 320 K by ^208Pb^27＋ ion with energy of 1.1 MeV/u to the fluences ranging from 1 × 10^12 to 5 × 10^14 ion/cm^2. The modification of structure and optical properties induced by ion implantation or irradiation were analyzed by using photoluminescence（PL） and Fourier transformation infrared spectrum（FIR） spectra and transmission electron microscopy（ TEM ） measurements. The PL measurements showed that absorption peaks located at 375,413 and 450 nm appeared in all the implanted or irradiated samples, the PL intensities reached up to the maximum for the 5 × 10^16 ion/cm^2 implanted samples. After Pb-ion irradiation, a new peak located at 390 nm formed. TEM analyses showed that small size voids,（ 1--2 nm） with high density were formed in the region from the surface till to about 100 nm in depth and also large size Nebubble formed in the Ne-doped region. From the obtained FTIR spectra, it was found that Pb-ion irradiation induced broadening of the absorption band in 460-510 cm^-1 and position shift of the absorption band in 1 000- 1 300 cm^- 1 towards to high wavenumber. The possible damage mechanism in single crystal sapphire induced by energetic ion implantation or irradiation was briefly discussed.     

快重离子辐照效应的穆斯堡尔谱学研究

概述了利用穆斯堡尔效应开展的固体材料快重离子辐照效应研究的部分结果 ,并对建立在兰州重离子加速器 (HIRFL)上的在束穆斯堡尔谱学研究装置及其应用作了简要的介绍.Mssbauer spectroscopy study of irradiation effects induced by swift heavy ions in solid materials were briefly presented.Amorphization phenomenon of yttrium iron garnet irradiated by 1 GeV Ar ions has been investigated. For the first time, the nearly complete amorphous state was observed. Stainless steel 316L samples were irradiated with 54 MeV C ions and phase transformation of the samples was observed. HT 9 ferrite steel was irradiated with 510 MeV C ions. Its phase...     

On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range

Sapphire samples, irradiated with swift Kr (245 MeV) ions at room temperature in a broad fluence range, were investigated using a continuous and a pulsed positron beam to study the defect structure created by the passage of the ions in depths of a few micrometers. At small doses, monovacancies were identified as dominant defects and positron trapping centres. These monovacancies are assumed to be highly concentrated inside a cylindrical volume around the ion path with an estimated radius of ∼1.5 nm. For higher doses a second type of trapping centre emerges. This second class of structural imperfection was associated with the overlap of the individual ion tracks leading to the formation of larger vacancy clusters or voids.     

NeK X-ray yields on Be,C, Mg,Al and Ti bombardments

NeK X-rays have been measured when various thick targets were irradiated by Ne^{+, ++} ions. For Mg, Al and Ti targets, the X-ray yield dependence on Ne energy agrees qualitatively with the electron promotion model prediction.     

EPR and UV spectrometry investigation of sucrose irradiated with carbon particles

Solid state/EPR (SS/EPR) dosimeters of carbon ions irradiated sucrose are studied with EPR, and their water solutions – with UV spectroscopy. Doses between 20 and 200 Gy are used with linear energy transfer (LET) values for carbon ions of 63, 77, 96 and 230 keV μm^?1. After irradiation all samples show typical for irradiated sucrose EPR and UV spectra. The obtained data are compared with those previously reported for nitrogen particles and gamma rays irradiated sucrose. The identical shape of both the EPR and UV spectra of irradiated with various type radiation samples suggests that generated free radicals are not influenced by the nature of radiation. The lack of difference in the line width of the separate lines or the whole EPR spectrum, obtained for gamma and heavy particles irradiation, suggests negligible spin–spin interaction among the radiation-generated free radicals in the samples. The linear dependence of the EPR response on the absorbed dose radiation is found to be higher when generated by gamma rays, than by the same absorbed dose of heavy particles. In addition, the EPR response for carbon ions is higher than that for nitrogen ions. Water solutions of irradiated sucrose exhibit UV spectrum with absorption maximum at 267 nm, attributed to the recombination products of free radicals. The UV band intensity depends on the absorbed dose radiation. The UV spectra obtained for carbon, nitrogen and gamma rays irradiated sucrose are also compared.     

Location and depth profiling of Ne atoms implanted in a Nb crystal using a resonant nuclear reaction

Trapping of Ne by radiation induced defects is shown through the depth-profiling of Ne implanted into Nb crystals using the ²⁰Ne(p, γ)²¹ Na reaction. A channeling study shows that implanted atoms occupy octahedral interstices in niobium. The change of the Ne profile with further irradiation by other ions is attributed to radiation enhanced diffusion of Ne.     

110keV铁离子束辐照L(+)–半胱氨酸的分子改性研究

用110keVFe离子注入L(+)-半胱氨酸薄膜样品,然后通过傅里叶变换红外光谱、紫外-可见光谱和核磁共振氢谱分析表明,L(+)-半胱氨酸在接受Fe离子束辐照后受到了严重损伤,在样品中产生了新的分子基团.ESR波谱分析表明在辐照产物中存在一种长寿命自由基.ESI质谱分析进一步支持了低能离子束辐照所致生物分子改性的发生.     

Formation of clusters and the magnetooptical Kerr effect in gallium arsenide implanted with manganese ions

The surface morphology and magnetic properties of GaAs irradiated by manganese ions are studied at room temperature using atomic-force microscopy and the magnetooptical Kerr effect. It is shown that ferromagnetism takes place in the surface layer of the irradiated semiconductor subjected to annealing at 715–750°C. The magnetic properties of this layer are related to the evolution of submicron clusters in GaAs doped with Mn.     

Several features of the Ar<Superscript>+</Superscript>-ion irradiation of vanadium and its alloys

Changes in the surface properties of vanadium and its alloys irradiated by Ar⁺ ions with the energy 20 keV, to a dose of 10²² m⁻² at T _irr ≈ 700K have been studied. The radiation effect consists of material surface hardening, increasing the lattice parameters of the irradiated samples, and radiation erosion of the surface layers in the form of flaking. Features of radiation damage to the material’s surface irradiated by gas ions with high sputtering coefficients are discussed.