AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

AlGaN/GaN high-electron-mobility transistors （HEMTs） with Al-doped ZnO （AZO） transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current-gain cutoff frequency （fT） of 10 GHz and a power gain cutoff frequency （fmax） of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C-V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C-V dual sweep.     

多声源的自由场有源声吸收

本文利用声源辐射阻抗讨论了三维空间有源声吸收问题．推导出适用于任意初级声场条件下的多次级源最优复强度的一般表达式，并通过分析声源辐射阻抗的变化规律阐明了声吸收的机理．在此基础上，以两个点源在平面波声场中的声吸收为例，详细讨论了次级源吸收功率与两源位置的变化关系，并给出消声区域分布规律．最后在半消声室中获得了良好的实验效果，验证了所得结论．     

自适应空间有源消声中误差传声器的位置及个数优化

近年来对有源消声理论以及自适应有源消声技术的研究一直是相互独立着进行的，本文通过对自适应有源消声系统中误差传声器个数以及位置的优化选择，找到了它们两者之间的联系，并结合控制系统的性能特点给出了误差传声器个数及位置优化的方法，对影响自适应有源消声效果的因素做了分析讨论，实验验证了本文所得结论，并取得了良好的效果．     

光驱动的金属富勒烯分子磁开关※

由于碳笼的保护, 从外部操控内嵌富勒烯笼内分子的特性一直是一个挑战. 通过在顺磁性金属富勒烯Sc₃C₂@C₈₀碳笼外修饰具有光活性的偶氮苯-氮氧自由基, 成功设计出基于金属富勒烯-氮氧自由基的分子开关, 实现了原位可逆地光驱动远程控制金属富勒烯的顺磁特性. 在不同光照条件下, 利用偶氮苯的光异构化特性改变双自旋中心的相对位置, 调整自旋-自旋、自旋-晶格相互作用, 进而影响金属富勒烯的电子顺磁特性. 研究发现, 紫外光照下, 氮氧自由基使金属富勒烯Sc₃C₂@C₈₀的顺磁信号逐渐减弱, 可见光照下Sc₃C₂@C₈₀的顺磁信号又增强, 由此实现了氮氧自由基作为顺磁开关的功能.     

利用Li+插层调控WS2光电器件响应性能研究

过渡金属硫族化合物由于其具有独特的结构和性质,在光电子学、纳米电子学、储能器件、电催化等领域具有广泛的应用前景,是一类被持续关注的代表性二维层状材料.在材料应用过程中,对材料掺杂特性的调控会极大地改变器件的响应性能.因而,对利用掺杂手段调控过渡金属硫族化合物器件响应性能的研究具有重要的意义.电化学离子插层方法的发展为二维材料的掺杂调控提供了新的手段.本文以WS₂为例,采用电化学离子插层方法对厚层WS₂的掺杂特性进行优化,观察到离子插入后器件电导率的显著增强(约200倍),以及栅压对器件光电响应性能的有效且可逆的调控.本文通过栅压控制离子插层的方法实现对WS₂器件光电响应的可逆可循环调节,为利用离子插层方法调控二维材料光电器件响应性能研究提供了实验基础.     

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors(HEMTs)fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability.It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress.The degradation does not originate from the presence of as-grown traps in the Al Ga N barrier layer or the generated traps during fluorine ion implantation process.By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions,a good agreement is observed.It provides direct experimental evidence to support the impact ionization physical model,in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the Al Ga N barrier layer by electrons injected from 2DEG channel.Furthermore,our results show that there are few new traps generated in the Al Ga N barrier layer during the gate overdrive stress,and the ionized fluorine ions cannot recapture the electrons.     

固相萃取-超高效液相色谱串联质谱法同时检测禽畜粪便中多种抗生素残留

建立了固相萃取-超高效液相色谱串联质谱(SPE-UPLC/MS/MS)同时测定禽畜粪便中6种磺胺类(SAs)、4种四环素类(TCs)、3种氟喹诺酮类(FQs)、3种大环内酯类(MACs)以及1种硝基呋喃类(NFs)抗生素残留的方法。样品分别由McIlvaine-Na2EDTA缓冲液和有机混合提取液逐次超声提取,合并提取液,以正己烷去脂,过SAX-HLB固相萃取系统富集净化,经氮吹、定容后,以乙腈和0.1%甲酸-水溶液为流动相进行UPLC/MS分离检测,内标法定量。在0.1～1000μg/kg(Dry weight)浓度范围内,所有目标物标准曲线R2均大于0.99,样品加标回收率在42.3%～79.6%之间,相对标准偏差为1.4%～5.4%。方法检出限为0.1～2.0μg/kg,定量下限为0.3～6.6μg/kg。应用本方法检测华北地区多个禽畜养殖基地粪便样品32份,所有抗生素均有不同程度的检出,最高检出浓度为金霉素125μg/kg。     

60Co γ射线辐射对AlGaN/GaN HEMT器件的影响

采用⁶⁰Co γ射线辐射源对非钝化保护的AlGaN/GaN高电子迁移率晶体管(HEMT)器件进行了1 Mrad(Si)的总剂量辐射,实验发现辐射累积剂量越大,器件尺寸越小,器件饱和漏电流和跨导下降越明显,同时辐射后器件栅泄漏电流明显增大,而阈值电压变化很小. 对辐射前后器件的沟道串联电阻和阈值电压变化的分析表明,辐射感生表面态负电荷的产生是造成AlGaN/GaN HEMT器件电特性退化的主要原因之一. 关键词： AlGaN/GaN HEMT器件 γ射线辐射 表面态     

60Co γ射线辐射对AlGaN/GaN HEMT器件的影响

采用60 Co γ射线辐射源对非钝化保护的AlGaN/GaN高电子迁移率晶体管(HEMT)器件进行了1 Mrad(Si)的总剂量辐射,实验发现辐射累积剂量越大,器件尺寸越小,器件饱和漏电流和跨导下降越明显,同时辐射后器件栅泄漏电流明显增大,而阈值电压变化很小. 对辐射前后器件的沟道串联电阻和阈值电压变化的分析表明,辐射感生表面态负电荷的产生是造成AlGaN/GaN HEMT器件电特性退化的主要原因之一.     

Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric

Al0.85In0.15N//AlN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） employing a 3-nm ultra-thin atomic-layer deposited （ALD） Al2O3 gate dielectric layer are reported. Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V, a peak transeonductance of 328mS/mm, a cutoff frequency fr of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventionM Al0.85In0.15N/AlN/GaN HEMT. Negligible C - V hysteresis, together with a smaller pinch-off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AIInN interface, it is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconduetance of the MOS-HEMT is increased slightly. It is an exeitin~ inwrovement in the transconductance performance.