增强型AlGaN/GaN高电子迁移率晶体管高温退火研究

深入研究了两种增强型AlGaN/GaN高电子迁移率晶体管(HEMT)高温退火前后的直流特性变化.槽栅增强型AlGaN/GaN HEMT在500 ℃ N₂中退火5 min后,阈值电压由0.12 V正向移动到0.57 V,器件Schottky反向栅漏电流减小一个数量级.F注入增强型AlGaN/GaN HEMT在 400 ℃ N₂中退火2 min后,器件阈值电压由0.23 V负向移动到-0.69 V,栅泄漏电流明显增大.槽栅增强型器件退火过程中Schottky有效势垒     

两个碳原子核组成的“分子”

大家知道,一切元素除惰性气体以外的原子,都可以包含在分子的成分中。把原子结合在分子内的力的本性可用量子力学来解释。对于分子的形成起决定作用的是交换相互作用。这种相互作用表现在原子的价电子易位,出现公共的电子云,它使一个原子结連在另一个的周围。     

最小二乘格形(LSL)自适应有源消声系统算法及实现

为了提高单路有源消声系统的消声带宽，本文把具有收敛性能基本不依赖于输入这一优异特性的最小二乘格形（LSL）滤波器引入有源消声，并利用高速信号处理器TMS320C25实现滤波器功能，成功地建立了一套LSL自适应有源消声系统．实验表明，该系统对带宽为248Hz的宽带噪声能达到10－15dB（A）的抵消比，取得了较好的效果．     

Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate(OG)and the temporary storage diffusing(TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node(FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications.     

瑞利多普勒测风激光雷达的频率标定方法

频率标定是瑞利测风激光雷达的关键技术。瑞利测风激光雷达中,通过改变压电陶瓷管的电压实现连续调谐F-P标准具腔长,使出射激光频率处于双边缘透过率曲线的交点处。在连续调谐时,由于压电陶瓷管的磁滞效应引起腔长调谐非线性,从而导致系统误差。分析了该误差的原因及特性,提出了静态软件补偿和动态调频跟踪相结合的频率标定方法。若激光出射频率相对F-P标准具漂移小于100 MHz时,在数据反演时补偿该频率偏差;若相对频率漂移大于100 MHz时,将F-P标准具先退回预设腔长以下,通过逐步增加电压的方式,重新实现频率锁定,保证锁定过程处在磁滞回线的电压上升段,避免了磁滞效应引起的误差。多普勒激光雷达与无线电探空仪的两组对比实验中,在15~30km高度,风速最大偏差6.22m/s,平均偏差1.12m/s。     

Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment

The influence of an N_2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor(HEMT) prepared by using a plasma-enhanced chemical vapor deposition(PECVD) system is presented.After the plasma treatment,the peak transconductance(g_m) increases from 209 mS/mm to 293 mS/mm.Moreover,it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device.From the analysis of frequency-dependent conductance,it can be seen that the trap state density(D_T) and time constant(τ_T) of the N20-treated device are smaller than those of a non-treated device.The results indicate that the N_2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.     

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor(HEMT) becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping(2D-VRH) model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.     

超声相控阵系统中基于FPGA的PCIe总线数据传输研究*

针对超声相控阵系统的高速传输需求,本文提出了一种基于FPGA的PCIe总线传输方案。实现了基于PCIe总线的相控阵数据DMA(直接存储器读写)上传、控制命令下传、发送数据缓存及驱动和上位机测试程序设计。通过实验测试了PCIe总线的DMA传输速率,可达6.5Gbit/s,并成功将该方案应用于64通道超声相控阵检测系统中,实现了超声相控阵系统的PCIe总线数据传输。     

Steenrod代数上同调中的一个非平凡乘积元b_0~3δ_(s+4)（英文）

本文主要研究了Steenrod代数上同调非平凡乘积元问题.设p为大于5的素数,A代表模p的Steenrod代数.通过对May谱序列的详尽组合分析,证明了古典Admas谱序列中乘积元―b_0~3δ_(s+4)∈Ext_A~(s+10,t(s))(Z_p,Z_p)的非平凡性,其中p≥7,0≤sp-5,t(s)=2(p-1)[(s+4)p~3+(s+3)p~2+(s+5)p+(s+1)]+s.这有助于对球面稳定同伦群中同伦元素非平凡性进行进一步研究.     

Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

A non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor(quasi-EDHEMT) with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering(DIBL)was presented. Due to the metal organic chemical vapor deposition(MOCVD) grown 9-nm undoped AlGaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas(2DEG) was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1-μm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm.The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of-6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V.