Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

A novel Ga N-based vertical heterostructure field effect transistor(HFET) with nonuniform doping superjunctions(non-SJ HFET) is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance(R_(on)A) at no expense of breakdown voltage(BV).The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions(un-SJ HFET).A physically intrinsic mechanism for the nonuniform doping superjunction(non-SJ) to further reduce R_(on)A at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the R_(on)A on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in R_(on)A depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in R_(on)A could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing R_(on)A and provide a useful reference for further developing the Ga N-based vertical HFETs.     

双峰倍增配平法用于同步、导数-同步荧光法同时测定邻羟基苯甲酸和间羟基苯甲酸

邻羟基苯甲酸（ｏＨＢＡ）和间羟基苯甲酸（ｍＨＢＡ）荧光光谱严重重叠，同步及导数技术虽使选择性有所改善，但仍不能完全分辨开重叠谱。用双峰倍增配平计算法结合同步、一阶导数－同步荧光法对双组分体系（邻羟基苯甲酸／间羟基苯甲酸，ｐＨ１２介质）同时测定。结合计算的两种测定方法精密度、回收率和不同组分间浓度比范围均优于一阶导数－同步荧光法。     

流动注射—光度法测定超氧阴离子自由基（O^2—）与超氧化物歧化…

合成了４种硫代碳酰腙类化合物双水杨醛硫代碳酰腙、双对羟基苯甲醛硫代碳酰腙、双香兰素硫代碳酰腙和双邻香兰素硫代碳酰腙,其中苯环醛基对位具有羟基的ＢＨＢＴＺ和ＢＭＨＢＴＺ能与超氧阴离子自由基、Ｈ２Ｏ２发生显色反应。     

双峰倍增配平法用于同步,导数—同步荧光法同时测定邻羟基苯甲酸和间 …

邻羟基苯甲酸（ｏ－ＨＢＡ）和间羟基苯甲酸（ｍ－ＨＢＡ）荧光光谱严重重叠，同步及导数技术虽使选择性有所改善，但仍不能完全分辨开重叠谱。用双峰倍配平计算法结合同步，一阶导数－同步荧光法对双组分体系（邻羟基苯甲酸／间羟基苯甲酸，ｐＨ１２介质）同时测定，结合计算的两种测定方法精密度，回收率和不同组分间浓度比范围均优于一阶导数－同步荧光法。     

三维同步偏振荧光光谱研究蛋白质溶液变性时氨基酸残基的发光行为

将偏振技术、同步技术与三维技术结合起来的三维同步偏振荧光光谱(TDSPS)能分辨蛋白质溶液中的色氨酸(Trp)和酪氨酸(Tyr)残基，具有同步光谱分辨率高、三维技术信息丰富的优点．本文用TDSPS表征牛血清白蛋白(BSA)、人血清白蛋白(HSA)受各种因素影响(酸效应、碱效应、盐效应、猝灭剂等)时Trp，Tyr残基荧光光谱的变化，用于区分HSA和BSA．     

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

A novel Al Ga N/Ga N high electron mobility transistor(HEMT) with a source-connected T-shaped field-plate(ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate(ST-FP) is composed of a source-connected field-plate(S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP(S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.     

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor(MOSFET) with a Schottky-drian(SD) and SD-connected semisuperjunctions(SDD-semi-SJ),named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional(2D) numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions(SJ) or semisuperjunctions(semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage(BV) and the specific on-resistance(R_(on)A).For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration(N),in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_(on)A-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_(on)A-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.     

水杨醛缩2-氨基-4-苯基噻唑及其配合物的合成与仿酶催化活性研究

The new containing Surfur Schiff base Salicylaldelye-2-amino-4-Phenylthiazole(SAPTZ) and its Cu(Ⅱ)、Zn(Ⅱ)、Ni(Ⅱ) and Co(Ⅱ) compelexes were synthesized. The structures of the complexes were characterized by elemental analysis, IR and UV-vis. The peroxidase-like activity of the complexes for the oxidation of Vc with H₂O₂ was determined.