Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer(SEM/EDS) method and x-ray photoelectron spectroscopy(XPS) method were used to confirm the formation of oxides.Based on the experimental results,the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V,a high peak transconductance of 210 mS/mm,and a maximum drain current of 610 mA/mm at the gate bias of 4 V.Meanwhile,the on/off current ratio of enhancement-mode HEMT was as high as 10~8,drain induced barrier lowering(DIBL) was as low as 5 raV/V,and subthreshold swing(SS) of 80 mV/decade was obtained.Compared with the conventional HEMT,the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower,and the off-state breakdown voltage of which was higher.In addition,a power gain cutoff frequency(/max) of the enhancement-mode HEMT was larger than that of the conventional one.     

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

A novel Al Ga N/Ga N high electron mobility transistor(HEMT) with a source-connected T-shaped field-plate(ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate(ST-FP) is composed of a source-connected field-plate(S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP(S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.     

问题链教学模式在流体力学教学中的应用

简要介绍了问题链教学模式,分析了该教学模式的内涵和关键要素,以流体力学课程中教学实例说明问题链教学模式的应用方法.培养了学生问题意识,提高了学生独立思考和创新能力.     

变倾角移相法测量反射棱镜的光学平行差

为解决棱镜等效展开为玻璃平板后因腔长固定导致的移相困难问题,提出一种变倾角移相测量反射棱镜光学平行差的方法。通过改变光束在反射棱镜入射端面上的倾角在干涉图中引入移相量,实现干涉图中的相位提取。采用最小二乘法拟合相位计算反射棱镜的光学平行差。在实验中,测试了一块弦长为56.5mm的等腰直角棱镜,得到直角偏差Δ_(90°)为-2.1435″、锐角偏差δ_(45°)为-4.6216″、直角边对应棱差γ_C为0.3554″,而Zygo GPI干涉仪仅可得到棱镜直角偏差,与本文方法的测量值偏差在0.15″以内。所提方法移相光路设计简便,并可实现小尺寸反射棱镜的测量。     

模p-Steenrod代数高维上同调群中的一个非平凡乘积元

证明了模p-Steenrod代数高维上同调群中的乘积元b_0~2γs∈Ext_A~(s+4,t(s))(Z_p,Z_p)的非平凡性,其中p≥11,3≤sp-1,t(s)=2(p-1)[sp~2+(s+1)p+(s-2)]+(s-3).     

甲胺水合离子团簇的结构模型及红外光谱研究

本文利用量子化学计算方法，研究了甲胺和水复合离子团簇[(CH₃NH₂)(H₂O)_n]⁺的几何结构、能量和红外光谱，揭示了结构生长模型、氢键作用机制和质子转移机理. 研究结果表明，在[(CH₃NH₂)(H₂O)_n]⁺团簇中，甲胺甲基上的一个氢原子转移到氨基上，形成分子内质子转移的CH₂NH₃⁺离子核心结构模型，水分子作为氢键受体，与质子化氨基NH₃⁺形成氢键. CH₃NH₂⁺离子核心结构模型没有CH₂NH₃⁺离子核心结构模型稳定. 在团簇的红外光谱中，CH振动、自由NH振动、氢键结合的NH振动和OH振动模式在CH₃NH₂⁺和CH₂NH₃⁺两种离子核心结构模型的理论计算红外光谱中明显不同，因此可用于鉴别甲胺水合离子团簇的结构模型，有助于理解甲胺和水复合团簇的氢键网络结构.     

基于扫描F-P标准具的高光谱分辨低平流层温度探测

报道了一种基于扫描F-P标准具的高光谱分辨低平流层大气温度探测技术。通过扫描F-P标准具,获得大气分子瑞利后向散射的透过率分布。对该透过率进行非线性拟合,由拟合得到的谱宽计算大气温度分布。为了减小频率不稳定引起的系统误差,采用静态的F-P标准具实时监测激光出射频率,并在数据处理中进行补偿。由时间分辨率2000s的激光雷达原始信号的信噪比,根据最大似然估计误差分析,该方法在30km以下的探测误差小于1.9K,50km以下的探测误差小于9.8K。在对比实验中,在18~36km高光谱分辨激光雷达与探空气球探测的温度廓线最大偏差4.7K;在27~34km,高光谱分辨激光雷达与瑞利积分激光雷达探测的温度最大偏差2.7K。在15~27km,由于气溶胶的污染,瑞利积分激光雷达的温度明显偏离其他两种探测结果,最大偏差达22.8K。     

具有语言评价信息的卓越组织绩效评价

针对企业卓越组织绩效评价时不容易定量的实际情况,提出了一种基于语言评价信息的系统评价方法.依据GB/T 19580-2004<卓越绩效评价准则>标准,提出了适合企业自我诊断的评价指标体系,结合2006年和2007年语言评价资料对某企业实施卓越组织绩效活动的效果进行了评价分析.     

家猫ACE2基因克隆、测序及生物信息学分析

本研究从家猫组织中扩增并鉴定血管紧张素转换酶2（angiotensin-converting enzyme 2，ACE2）基因，为阐明SARS相关冠状病毒（SARS-CoV）感染家猫的机制提供理沧依据．从家猫肺脏中提取总RNA，以Oligo dT-Adaptor为引物合成第一链cDNA，根据人及小鼠的ACE2基因mRNA序列设计系列引物，通过聚合酶链式反应，分段扩增出家猫ACE2基因的编码区的特异性片段并测序鉴定．家猫ACE2基因mRNA编码区共包括2418个核什酸，推测编码蛋白含805个氨基酸残基．其氨基酸序列与人、小鼠、大鼠ACE2氨基酸序列的同源性分别达到85％，81％和81%．利用多种生物信息学工具软件对家猫ACE2蛋白的理化及生物学性质进行分析．比较人、家猫、果子狸、小鼠、大鼠等ACE2序列中与SARS-CoV结合有关的3个功能区，发现家猫ACE2与人ACE2的同源性最高，提示家猫ACE2在SARS病毒跨种感染中可能发挥重要作用．     

AlGaN/GaN异质结Ni/Au肖特基表面处理及退火研究

采用O₂等离子体及HF溶液对AlGaN/GaN异质结材料进行表面处理后，Ni/Au肖特基接触特性比未处理有了明显改善，反向泄漏电流减小3个数量级.对制备的肖特基接触进行200—600℃ 5min的N₂气氛退火，发现退火冷却后肖特基反向泄漏电流随退火温度增大进一步减小.N₂气中600℃退火后肖特基二极管C-V特性曲线在不同频率下一致性变好，这表明退火中Ni向材料表面扩散减小了表面陷阱密度；C-V特性曲线随退火温度增大向右移动，从二维电子气耗尽电压绝对值减小反映了肖特基势垒的提高. 关键词： AlGaN/GaN 肖特基接触 表面处理 退火