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Structural and optical investigation of nonpolar α-plane GaN grown by metalben organic chemical vapour deposition on r-plane sapphire by neutron irradiation 下载免费PDF全文
Nonpolar (1120) α-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1102) sapphire. The samples are irradiated with neutrons under a dose of 1 × 1015 cm-2. The surface morphology, the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and photoluminescence (PL). The AFM result shows deteriorated sample surface after the irradiation. Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction. Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample, indicating that more point defects appear in the irradiated sample. The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results. The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron. 相似文献
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Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure 下载免费PDF全文
This paper reports on a comparative study of the spatial distributions of the electrical,optical,and structural properties in an AlGaN/GaN heterostructure.Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence bandedge energy peak shifts to a high wavelength.This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation,which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration. 相似文献
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采用不同的高场应力和栅应力对AlGaN/GaN HEMT器件进行直流应力测试,实验发现:应力后器件主要参数如饱和漏电流,跨导峰值和阈值电压等均发生了明显退化,而且这些退化还是可以完全恢复的;高场应力下,器件特性的退化随高场应力偏置电压的增加和应力时间的累积而增大;对于不同的栅应力,相对来说,脉冲栅应力和开态栅应力下器件特性的退化比关态栅应力下的退化大.对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应
关键词:
AlGaN/GaN HEMT器件
表面态(虚栅)
势垒层陷阱
应力 相似文献
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本文采用能量为1 MeV的中子对SiN钝化的AlGaN/GaN HEMT(高电子迁移率晶体管)器件进行了最高注量为1015cm-2的辐照.实验发现:当注量小于1014cm-2时,器件特性退化很小,其中栅电流有轻微变化(正向栅电流IF增加,反向栅电流IR减小),随着中子注量上升,IR迅速降低.而当注量达到1015cm-2时,在膝点电压附近,器件跨导有所下降.此外,中子辐照后,器件欧姆接触的方块电阻退化很小,而肖特基特性退化却相对明显.通过分析发现辐照在SiN钝化层中引入的感生缺陷引起了膝点电压附近漏电流和反向栅泄漏电流的减小.以上结果也表明,SiN钝化可以有效地抑制中子辐照感生表面态电荷,从而屏蔽了绝大部分的中子辐照影响.这也证明SiN钝化的AlGaN/GaN HEMT器件很适合在太空等需要抗位移损伤的环境中应用. 相似文献
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采用60Co γ射线辐射源对非钝化保护的AlGaN/GaN高电子迁移率晶体管(HEMT)器件进行了1 Mrad(Si)的总剂量辐射,实验发现辐射累积剂量越大,器件尺寸越小,器件饱和漏电流和跨导下降越明显,同时辐射后器件栅泄漏电流明显增大,而阈值电压变化很小. 对辐射前后器件的沟道串联电阻和阈值电压变化的分析表明,辐射感生表面态负电荷的产生是造成AlGaN/GaN HEMT器件电特性退化的主要原因之一.
关键词:
AlGaN/GaN HEMT器件
γ射线辐射
表面态 相似文献
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Structural and optical investigation of nonpolar a-plane GaN grown by metal-organic chemical vapour deposition on r-plane sapphire by neutron irradiation 下载免费PDF全文
Nonpolar (1120) a-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1102) sapphire.The samples are irradiated with neutrons under a dose of 1 × 10 15 cm 2.The surface morphology,the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM),high resolution X-ray diffraction (HRXRD) and photoluminescence (PL).The AFM result shows deteriorated sample surface after the irradiation.Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction.Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample,indicating that more point defects appear in the irradiated sample.The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results.The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron. 相似文献
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High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors 下载免费PDF全文
AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current IDsat, maximal transconductance gm, and the positive shift of threshold voltage VTH at high drain-source voltage VDS. The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with VDS = 20 V and VGS = 0 V applied to the device for 104 sec, the SiN passivation decreases the stress-induced degradation of IDsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of IDsat, which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. 相似文献
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