The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET＇s

The anomalous phenomenon of generation current ICD in the lightly doped drain （LDD） nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated （A） and frozen （F） traps for the VD-step mode： The A traps contributes to ICD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.     

Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced.     

Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor(HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.     

Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account, conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of oxide positive charges and the recovery of interface states under the `low' state of p-channel metal oxide semiconductor field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.     

3 MeV质子辐照对AlGaN/GaN高电子迁移率晶体管的影响

研究了AlGaN/GaN 高电子迁移率晶体管(HEMT)的质子辐照效应. 在3 MeV质子辐照下, 当辐照剂量达到1× 10¹⁵ protons/cm²时, 漏极饱和电流下降了20%, 最大跨导降低了5%. 随着剂量增加, 阈值电压向正向漂移, 栅泄露电流增加. 在相同辐照剂量下, 1.8 MeV质子辐照要比3 MeV质子辐照退化严重. 从SRIM软件仿真中得到不同能量质子在AlGaN/GaN异质结中的辐射损伤区, 以及在一定深度形成的空位密度. 结合变频C-V测试结果进行分析, 表明了质子辐照引入空位缺陷可能是AlGaN/GaN HEMT器件电学特性退化的主要原因.     

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

This paper studies the drain current collapse of AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device.For NbAlO MIS-HEMT,smaller current collapse is found,especially when the gate static voltage is 8 V.Through a thorough study of the gate-drain conductance dispersion,it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface.Therefore,fewer traps can be filled by gate electrons,and hence the depletion effect in the channel is suppressed effectively.It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively,and weaken the current collapse effect accordingly.     

SILC during NBTI Stress in PMOSFETs with Ultra-Thin SiON Gate Dielectrics

Negative bias temperature instability （NBTI） and stress-induced leakage current （SILC） both are more serious due to the aggressive scaling lowering of devices. We investigate the SILC during NBTI stress in PMOSFETs with ultra-thin gate dielectrics. The SILC sensed range from -1 V to 1 V is divided into four parts： the on-state SILC, the near-zero SILC, the off-state SILC sensed at lower positive voltages and the one sensed at higher positive voltages. We develop a model of tunnelling assisted by interface states and oxide bulk traps to explain the four different parts of SILC during NBTI stress.     

The study on mechanism and model of negative bias temperature instability degradation in P-channel metal-oxide-semiconductor field-effect transistors

Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal- oxide-semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25-0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction-diffusion model with H+ related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H+ generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H+ generated during NBTI stress.     

Study on the negative bias temperature instability effect under dynamic stress

This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress.Under alternant stress,the degradation smaller than that of single negative stress is obtained.The smaller degradation is resulted from the recovery of positive stress.There are two reasons for the recovery.One is the passivation of H dangling bonds,and another is the detrapping of charges trapped in the oxide.Under different frequencies of AC stress,the parameters all show regular degradation,and also smaller than that of the direct current stress.The higher the frequency is,the smaller the degradation becomes.As the negative stress time is too small under higher frequency,the deeper defects are hard to be filled in.Therefore,the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency.