问题导入式教学法在流线伯努利方程讲授中的应用

为了提升高校学员的思维和逻辑推理能力,提高流体力学课堂的教学水平,引入问题导入式教学法,坚持问题导向,层层递进,以流体力学课程中的教学实例,说明问题导入式教学法的应用,通过严密的推理过程,对已有知识进行有效的复习,得出科学的结论。增强了学生学习的兴趣和专注度,提高了学生独立思考和创新能力,取得了较好的教学效果。     

基于I-V-T和C-V-T的GaN上Ni/Au肖特基接触特性研究

基于对制作在n-GaN上的肖特基二极管的变温I-V测试和C-V测试，采用表面势垒减薄模型对肖特基二极管的电流输运特性进行了研究.试验结果表明，肖特基接触的电流输运机理非常复杂，在不同的温度条件和偏压条件下有着不同的电流输运机理.在此基础上对肖特基接触I-V特性方程进行了修正，得到了很好的拟合曲线.试验表明，高温I-V法提取的势垒高度与常温C-V法提取的势垒高度接近于根据金属功函数得出的理论势垒高度值. 关键词： 氮化镓 肖特基二极管 表面势垒减薄模型 热电子场发射     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

A GaN/Al_0.3Ga_0.7N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO₂ insulator (HfO₂-FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO₂-FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO₂ insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.     

AlGaN/GaN槽栅HEMT模拟与实验研究

分析了栅槽深度对AlGaN/GaN HEMT特性的影响,并对不同栅槽深度的器件特性进行了模拟,得到了器件饱和电流、最大跨导和阈值电压随栅槽深度的变化规律.当槽栅深度增大,器件饱和电流逐渐下降,而最大跨导逐渐增大,阈值电压向X轴正方向移动.研制出不同栅槽深度的蓝宝石衬底AlGaN/GaN HEMT,用实验数据验证了得到的不同栅槽深度器件特性变化规律.从刻蚀损伤和刻蚀引入界面态的角度分析了模拟与实验规律产生差别的原因. 关键词： 高电子迁移率晶体管 AlGaN/GaN 槽栅器件     

AlGaN/GaN高电子迁移率晶体管肖特基高温退火机理研究

在不同应力条件下,研究了AlGaN/GaN高电子迁移率晶体管高温退火前后的电流崩塌、栅泄漏电流以及击穿电压的变化.结果表明,AlGaN/GaN高电子迁移率晶体管通过肖特基高温退火以后,器件的特性得到很大的改善.利用电镜扫描(SEM)和X射线光电子能谱(XPS)对高温退火前、后的肖特基接触界面进行深入分析,发现器件经过高温退火后,Ni和AlGaN层之间介质的去除,并且AlGaN材料表面附近的陷阱减少,使得肖特基有效势垒提高,从而提高器件的电学特性. 关键词： AlGaN/GaN高电子迁移率晶体管 肖特基接触 界面陷阱     

自主研制实验设备，提高实验室综合实力1）

自主研发实验设备是办学水平的具体体现,也是培养学员创新能力的活教材. 流体力学实验室结合军队“2110”工程建设,先后研制了机翼升阻力实验仪、自循环流场显示系统、船池拖动系统等实验设备,解决了教学急需,锻炼了实验室队伍,提高了教学质量.     

航行气垫船激励浮冰响应的模型实验研究

基于弹性薄板振动微分方程和相似理论,建立了气垫船在浮冰上运动的原型系统与模型系统参数之间的相似对应关系. 导出了浮冰层自由振动波形传播的相速度和群速度计算公式,明确了相速度的极小值和浅水波传播速度即为气垫船的第一、第二临界速度. 根据研制的高精度非接触式激光位移测量系统,在变水深拖曳水槽中, 开展了不同速度移动气垫载荷激励薄膜变形响应的系列实验,证实了存在使薄膜变形达到最大的移动气垫载荷临界速度. 第一临界速度使气垫载荷之后的薄膜产生最大的下陷变形,第二临界速度使气垫载荷之前的薄膜产生最大的上凸变形. 通过实验结果进一步分析了气垫速度、高度、压力及水深等参数对薄膜变形和临界速度的影响,揭示了移动气垫载荷激励薄膜变形响应的聚能共振增幅机理,为利用气垫船实施有效破冰提供了依据.      

水下亚声速细长锥型射弹超空泡形态的计算方法

采用理想可压缩流体无旋定常流动以及超空泡尾部Riabushinsky闭合方式假定,基于细长体理论和匹配渐近展开法,建立了描述水下亚声速条件下细长锥型射弹超空泡流动的积分微分方程。求解得到了考虑压缩性影响的超空泡形态1阶和2阶近似解,改进了超空泡形态的计算精度。分析了射弹高速冲击条件下流体压缩性对超空泡形态的影响,随着马赫数的增加,超空泡形态将发生更加显著的膨胀变化。计算得到的超空泡特征参数与相关文献的理论和实验结果吻合良好。     

Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures

It was reported by Shen et al that the two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high density and improved mobility compared with an AlGaN/GaN structure, but the potential of the AlGaN/AlN/GaN structure needs further exploration. By the self-consistent solving of one-dimensional Schr\"{o}dinger--Poisson equations, theoretical investigation is carried out about the effects of donor density (0--1\times 10¹⁹cm^-3 and temperature (50--500K) on the electron systems in the AlGaN/AlN/GaN and AlGaN/GaN structures. It is found that in the former structure, since the effective \Delta E_c is larger, the efficiency with which the 2DEG absorbs the electrons originating from donor ionization is higher, the resistance to parallel conduction is stronger, and the deterioration of 2DEG mobility is slower as the donor density rises. When temperature rises, the three-dimensional properties of the whole electron system become prominent for both of the structures, but the stability of 2DEG is higher in the former structure, which is also ascribed to the larger effective \Delta E_c. The Capacitance--Voltage (C-V) carrier density profiles at different temperatures are measured for two Schottky diodes on the considered heterostructure samples separately, showing obviously different 2DEG densities. And the temperature-dependent tendency of the experimental curves agrees well with our calculations.