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41.
本文以荧光分子2-(2’-吡啶基)苯并咪唑(2.PBI)作为1,1’-联(2-芳杂环)类化合物模型,研究利用其2,2'-N原子螫合Zn2+诱导芳环共面化和荧光发射红移实现Zn:+比例计量检测的可行性。2-PBI在不同体系中的Zn2+荧光响应行为表明Zn2+结合将导致最大发射波长明显红移(乙腈36nm;HEPES缓冲液39nm),具有比例计量型Zn2+荧光探针的基本特点。2-PBI还具有显著的Zn2+荧光响应选择性,可以同时作为构建比例计量型探针的信号团和受体的基本骨架。通过对2-BPI的荧光机制和Zn2+识别行为的分析,提出r以2-PBI为基本骨架构建实用化比例计量型探针的途径。 相似文献
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43.
This paper reports that (Ga, Mn)N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraetion(XRD). Detailed XRD measurements have revealed the characteristic of Mn-ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566 cm-1 identified as EI(LO), A1 (LO) and E~, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650 725, 363, 506cm^-1 and the vicinity of E~ mode. The modes observed at 182, 288, 650 725em 1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the (Ga, Mn)N, which are in fair agreement with the standard theoretical results. 相似文献
44.
The consecutive reaction of bis [ 2, 2, 2-trifluoroethyl] phosphite and its application to the one-pot synthesis of 3-cyano-β, γ-unsaturated nitriles with exdusive or predominant E-selectivity (E: Z = 100-85: 0-15) and excellent yields (94%-99%) are described. 相似文献
45.
Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6Hben SiC substrates 下载免费PDF全文
In this paper, the epitaxial graphene layers grown on Si- and C-face 6H-SiC substrates are investigated under a low pressure of 400 Pa at 1600 ℃. By using atomic force microscopy and Raman spectroscopy, we find that there are distinct differences in the formation and the properties between the epitaxial graphene layers grown on the Si-face and the C-face substrates, including the hydrogen etching process, the stacking type, and the number of layers. Hopefully, our results will be useful for improving the quality of the epitaxial graphene on SiC substrate. 相似文献
46.
The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length
method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were
fabricated, and irradiated with 1~MeV electrons up to a dose of
3.43× 1014~e/cm-2. After radiation, the forward
currents of the SBDs at 2~V decreased by about 50%, and the
reverse currents at -200~V increased by less than 30%. Schottky
barrier height (φ B ) of the Ni/4H-SiC SBD increased
from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased
from 1.25~eV to 1.19~eV under -30~V irradiation bias. The
degradation of φ B could be explained by the variation
of interface states of Schottky contacts. The on-state resistance
(Rs) and the reverse current increased with the dose, which
can be ascribed to the radiation defects in bulk material. The
specific contact resistance (\rhoc) of the Ni/SiC Ohmic
contact increased from 5.11× 105~Ωega.cm2 to 2.97× 10-4~Ωega.cm2. 相似文献
47.
A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface Shockley–Read–Hall model. The consistency between simulation results and measured data in the different temperatures shows that this interface model can accurately describe the capture and emission performance for near-interface oxide traps, and can well explain the hysteresis-voltage response with increasing temperature, which is intensified by the interaction between deep oxide traps and shallow oxide traps. This also indicates that the near-interface traps result in an increase of threshold-voltage shift in SiC MOSFET with increasing temperature. 相似文献
48.
Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric 下载免费PDF全文
Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al2O3/SiO2, Al2O3, and SiO2) are fabricated and compared with each other. The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO2, and a relatively low gate leakage current of 1× 10-7 A/cm2 at electric field of 4 MV/cm comparable to Al2O3. The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface. 相似文献
49.
50.
With annealing temperature kept at 1573 K, the effects of annealing time on stability of the intrinsic defects in epitaxial unintentionally doped 4H-SiC prepared by low pressure chemical vapour deposition have been studied by electron spin resonance (ESR) and low temperature photoluminescence. This paper reports the results shown that annealing time has an important effect on the intrinsic defects in unintentionally doped 4H-SiC when annealing temperature kept at 1573 K. When the annealing time is less than 30 min, the intensity of ESR and photoluminescence is increasing with annealing time prolonged, and reaches the maximum when annealing time is 30 min. Then the intensity of ESR and photoluminescence is rapidly decreased with the longer annealing time, and much less than that of as-grown 4H-SiC when annealing time is 60 min, which should be related with the interaction among the intrinsic defects during the annealing process. 相似文献