6H-SiC电子输运的Monte Carlo模拟

从实际测量和单粒子Monte Carlo模拟两个方面研究了6H-SiC的电子输运规律，在模拟中考 虑了6H-SiC主要的散射机理，模拟的结果体现了6H-SiC具有良好的高温和高场特性以及迁移 率的各向异性，其横向迁移率和纵向迁移率相差近5倍.模拟结果和实验数据的对比说明了对 6H-SiC输运特性的模拟是正确的. 关键词： 6H-SiC Monte Carlo模拟 迁移率 散射机理

MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC

Temperature-and electric field-dependent electron transport in 6H-SiC has been s tudied by single-particle Monte Carlo technique,and the Hall electron mobility i n 6H-SiC has been measured over the temperature range 77K‖c/μ_⊥c in 6H-SiC is nearly 5,and the saturation velocity v_s is 2×107cm/s.The simulated results are in good agreement with measured data in a wide range of temperature and electric field.