Analytical model for reverse characteristics of 4H-SiC merged PN-Schottky （MPS） diodes

A new analytical model for reverse characteristics of 4H--SiC merged PN--Schottky diodes (MPS or JBS) is developed. To accurately calculate the reverse characteristics of the 4H--SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel--Kramers--Brillouin (WKB) theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing (S) and P-junction depth (X_j) on the characteristics of 4H--SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.     

Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature.The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semianalytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.     

一种新型的光控光导半导体开关解析模型

建立了一个新型的光控光导半导体开关（简称光导开关）解析模型,该模型通过拉氏变换求解了连续性方程,考虑了载流子的表面复合和体复合效应、载流子输运过程中的载流五－载流子散射效应和漂移速度的负微分效应、光作用过程的丹倍效应和光的反射、光强随深度的衰减效应。计算了光导开关的几个重要参考并获得了开关电流和输出电压等的波形,。计算表明光电导的关系在所谓的“线性模式”下并非是严格线性的。最后将计算结果与实验结果进行了比较,两者相符较好。     

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC （0001） substrates

We produced epitaxial graphene under a moderate pressure of 4 mbar(about 400 Pa) at temperature 1600℃. Raman spectroscopy and optical microscopy were used to confirm that epitaxial graphene has taken shape continually with slight thickness variations and regularly with a centimeter order of magnitude on 4H-SiC(0001) substrates. Then using X-ray photoelectron spectroscopy and Auger electron spectroscopy, we analyzed the chemical compositions and estimated the layer number of epitaxial graphene. Finally, an atomic force microscope and a scanning force microscope were used to characterize the morphological structure. Our results showed that under 4-mbar pressure, epitaxial graphene could be produced on a SiC substrate with a large area, uniform thickness but a limited morphological property. We hope our work will be of benefit to understanding the formation process of epitaxial graphene on SiC substrate in detail.     

Raman analysis of epitaxial graphene grown on 4Hben SiC (0001) substrate under low pressure condition

In this paper, we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4 mbar (1 bar=10⁵ Pa) with an argon flux of 2 standard liters per minute at 1200, 1300, 1400, and 1500 ℃ in a commercial chemical vapour deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 ℃ with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 ℃ is four-layer graphene.     

基于分布活化能模型法的农林生物质热解动力学对比研究

采用热重质谱（TG-MS）联用技术,考察杏壳、小麦秸秆与杨树木屑等典型农林生物质的热解行为及动力学。结果表明,组分差异使得三种生物质在主要反应区间内（200–450℃）表现出不同的特征。采用等转化率法计算发现,杏壳平均活化能为188.22 kJ/mol,秸秆平均活化能为220.77 kJ/mol,木屑平均活化能为175.87 kJ/mol。利用分布活化能模型（DAEM）法计算生物质中各组分的平均活化能,发现三种生物质中存在平均活化能较高的第四组分（杏壳297.44 kJ/mol、秸秆284.35 kJ/mol和木屑309.96 kJ/mol）,而半纤维素与纤维素呈现“秸秆<杏壳<木屑”规律。各类动力学计算方法能够互为补充,等转化率方法的整体计算结果与单组分分布活化能模型法结果接近,方法更简便,而分布活化能模型法可以求得原料不同组分的动力学参数,弥补等转化率法的不足,综合使用可以形成对热解反应更为全面的认识。     

碘量法测定复杂含硒物料中常量硒

用碘量法测定复杂含硒物料中常量硒并对测定条件做试验。试样经硝酸及硫酸溶解、蒸发至冒烟后,盐类溶于盐酸中。在酒石酸存在下加盐酸羟胺,于70℃保温1h,放置1.5h使硒还原为单质硒并陈化。过滤,将单质硒溶于盐酸中,溶解温度为90℃,溶解时间为5min,滴定时溶液酸度宜在0.2~0.5mol·L-1(盐酸介质)。滴定时采用分步滴加碘化钾溶液,随即用硫代硫酸钠标准溶液滴定至淀粉指示剂所显蓝色消失,至再次加入碘化钾无蓝色出现为终点。按所耗硫代硫酸钠标准溶液的体积计算试样的含硒量。     

界面态电荷对6H碳化硅N沟MOSFET阈值电压和跨导的影响

针对界面态密度在禁带中的不均匀分布,并且考虑到碳化硅材料中杂质的不完全离化,分析了界面态电荷对N沟6H碳化硅MOSFET阈值电压和跨导的影响.结果显示界面态密度的不均匀分布不仅使阈值电压增大,而且还会导致器件跨导变低,它是影响SiCMOSFET特性的一个重要因素 关键词： 碳化硅 界面态 阈值电压 跨导     

4H-SiC pn结型二极管击穿特性中隧穿效应影响的模拟研究

基于4H-SiC材料特性，建立了4H-SiC pn结型二极管的击穿模型.该模型在碳化硅器件中引入 雪崩倍增效应和隧穿效应.利用该模型，分析了隧穿效应对器件击穿特性的影响；解释了不 同的温度和掺杂条件下，器件的击穿机理.该模型较好地反映了实际器件的击穿特性. 关键词： 4H-SiC 二极管 击穿特性 隧穿效应 碰撞离化 模型     

涡轮叶片冷却新方法

现代先进航空发动机涡轮叶片一般采用冲击 对流 气膜复合冷却方法,叶片构造愈来愈复杂,冷气量也愈用愈大。为了进一步提高涡轮进口温度,应该寻求新的冷却途径。本文建议采用强化叶片的内冷过程和利用添加剂减弱燃气向叶片放热两措施来改善冷却。下面分别叙述这些措施的依据和对斯贝MK202发动机一级导叶的温度计算。