一种简单高效的制备硅纳米孔阵结构的方法

本文介绍了一种简单高效的制备硅纳米孔阵结构的方法. 利用激光干涉光刻技术, 结合干法和湿法刻蚀工艺, 直接将光刻胶点阵刻蚀为硅纳米孔阵结构, 省去了图形反转工艺中的金属蒸镀和光刻胶剥离等必要步骤, 在2英寸的硅 (001) 衬底上制备了高度有序的二维纳米孔阵结构. 利用干法刻蚀产生的氟碳有机聚合物作为湿法刻蚀的掩膜, 以及在干法刻蚀时对样品进行轻微的过刻蚀, 使SiO₂点阵图形下形成一层很薄的硅台面, 是本方法的两个关键工艺步骤. 扫描电子显微镜图片结果表明制备的孔阵图形大小均匀, 尺寸可控, 孔阵周期为450 nm, 方孔大小为200–280 nm. 关键词： 激光干涉光刻 纳米阵列 刻蚀 氟碳有机聚合物     

软X射线相位型聚焦波带片的研制

软X射线波带片是软X射线光学中聚焦、色散和成像的重要元件。以激光全息-离子束刻蚀技术制作金的振幅型软X射线聚焦波带片,以此为掩模,利用接触式同步辐射光刻和离子束刻蚀技术在聚酰亚胺衬底上,分别制作出了镍和锗的软X射线相位型聚焦波带片。     

极紫外投影光刻接触孔掩模的快速仿真计算

采用一个极紫外投影光刻掩模衍射简化模型实现了三维接触孔掩模衍射场的快速仿真计算。基于该模型,得到了接触孔掩模衍射场分布的解析表达式,并对光刻成像时的图形位置偏移现象进行了解释和分析。简化模型中,掩模包括吸收层和多层膜两部分结构,吸收层的透射利用薄掩模修正模型进行计算,多层膜的反射近似为镜面反射。以周期44 nm、特征尺寸分别为16 nm和22 nm的方形接触孔为例,入射光方向发生变化时,该简化模型与严格仿真相比,图形特征尺寸误差小于0.4 nm,计算速度提高了近100倍。此外,考虑到多层膜镜面位置对图形位置偏移量的影响,得到了图形位置偏移量的计算公式,其计算结果也与严格仿真相一致。     

锥形半导体激光芯片的光刻工艺研究

针对锥形半导体激光器中的脊形波导区宽度较小的问题,对半导体激光芯片制造中的刻蚀标记及刻蚀方法进行了研究。提出对于锥形半导体刻蚀中的脊型区域和锥形区域,采用不同精度的双标记刻蚀方法,细化对脊形波导和锥形波导的刻蚀中的对准问题,并使光刻标在不同的光刻版上相错位排列,在相应光刻版中相互遮挡,反复刻蚀中保证相应的光刻标清晰、完整。刻蚀后的芯片在电流为7 A时获得了中心波长963nm、连续功率4.026 W、慢轴方向和快轴方向激光光束参数乘积分别为1.593 mm·mrad和0.668 mm·mrad的激光输出。     

多光束无掩模光刻系统

介绍了一种多光束无掩模光刻系统,该系统利用空间光调制器数字微反射镜(DMD)对405 nm的激光光束进行调制,控制波带片阵列及纳米透镜阵列聚焦,利用聚焦点阵配合纳米移动平台进行扫描光刻。介绍了该无掩模光刻实验系统结构及工作原理,并给出了多光束光刻的实验结果。实验表明:利用普通蓝紫光源和聚焦元件阵列可实现分辨率为400 nm的多光束并行光刻。     

四激光束干涉光刻制造纳米级孔阵的理论分析

为提供一个在大范围内曝光出深亚微米甚至纳米级周期性密集图形的廉价的方法,研究了四激光束干涉光刻的原理,分析了干涉曝光的结果,并进行了计算机模拟.用现有的光源,如442 nm、365 nm、248 nm、193 nm激光,曝光得到的图形的临界尺寸容易做到180～70 nm.具有实际上无限制的焦深和容易实现的大视场.适合硅基CCDs、平场显示器的场发射电极阵列等光电子器件中大范围内超亚微米级的周期性孔阵或点阵结构图形的制作.     

极紫外投影光刻掩模阴影效应分析

极紫外（EUV）投影光刻掩模在斜入射光照明条件下,掩模成像图形位置和成像图形特征尺寸（CD）都将随入射光方向变化,即存在掩模阴影效应。基于一个EUV掩模衍射简化模型实现了掩模阴影效应的理论分析和补偿,得到了掩模（物方）最佳焦面位置和掩模图形尺寸校正量的计算公式。掩模（物方）焦面位置位于多层膜等效面上减小了图形位置偏移;基于理论公式对掩模图形尺寸进行校正,以目标CD为22 nm的线条图形为例,入射光方向变化时成像图形尺寸偏差小于0.3 nm,但当目标CD继续减小时理论公式误差增大,需进一步考虑掩模斜入射时整个成像光瞳内的能量损失和补偿。     

高分辨率衍射图形的DMD并行激光干涉直写

通过将数字微反射镜（Digital Micro-mirror Device,DMD）输入阵列图形微缩干涉成像,激光干涉直写系统在光刻胶板上得到缩小的干涉光斑图形,像素特征尺寸3.5 μm,干涉条纹周期1 μm.控制刻蚀深度、干涉条纹取向和DMD输入图形的结构,系统能数字化完成2D/3D、3D光变图像、超微图形文字以及二元光学元件的制作,实现了超高分辨率图形与高效的干涉光刻.给出了实验结果.     

基于随机并行梯度速降算法的光刻机光源与掩模联合优化方法

随着集成电路特征尺寸进入2Xnm及以下节点,光源与掩模联合优化(SMO)成为了拓展193nm ArF浸没式光刻工艺窗口、减小工艺因子的重要分辨率增强技术(RET)之一。提出了一种基于随机并行梯度速降(SPGD)算法的SMO方法,通过随机扰动进行梯度估计,利用估计梯度来迭代更新光源与掩模,避免了求解梯度解析表达式的过程,降低了优化复杂度。对周期接触孔阵列及十字线、密集线三种掩模图形的仿真验证表明,三种掩模图形误差(PE)值分别降低了75%、80%与70%,该方法较大程度地提高了光刻成像质量。     

分辨力增强技术的频谱分析

离轴照明和衰减型相移掩模作为重要的分辨力增强技术,不仅可以提高光刻的分辨力,同时还可以改善成像焦深,扩大光刻工艺窗口,实现65~32 nm分辨成像。从频谱的角度分析了离轴照明和衰减型相移掩模对成像系统交叉传递函数和像场空间频率分布的影响,研究这两种技术的物理光学本质,由此进一步优化光学成像系统设计、分辨力增强技术和确定设备使用的参量。对分辨力增强技术的频谱分析研究表明,分辨力增强技术通过调整像场频谱分布,改善了光学光刻的图形质量。对于65 nm密集图形,离轴照明和相移掩模结合后可以使成像衬比度最高达到0.948,工艺窗口在5%曝光范围内焦深达到0.51μm。     

基于分步式压印光刻的激光干涉仪纳米级测量及误差研究

针对在未做隔离保护处理的环境中，基于Michelson干涉原理的激光干涉仪测量系统存在严重的干扰误差，不适合分步式压印光刻纳米级对准测量的要求.采用Edlen公式的分析及计算，不仅在理论上揭示出环境温度、湿度、气压等变化对激光干涉仪测量准确度的影响，而且证明影响测量准确度的最大干扰源是空气流动的结果.通过气流隔离措施和系统测量反馈校正控制器，能够实时补偿激光干涉仪两路信号的相差.最终，测量漂移误差在10 min内由13 nm降低到5 nm以内，满足压印光刻在100 mm行程中达到20 nm定位准确度要求.     

大面积10000线/毫米软X射线金属型透射光栅的设计、制作与检测

基于严格的矢量耦合波理论,优化设计了用于13.4nm软X射线干涉光刻的透射型双光栅掩模版. 采用电子束光刻技术,在国内首次成功制作了周期为100nm的大面积金属型透射光栅.光栅面积为1.5mm ×1.5mm,Cr浮雕厚度为50nm,Gap/period为0.6,衬底Si₃N₄厚度为100nm. 此光栅将用于上海光源软X射线干涉光刻实验站.利用其1级衍射光和2级衍射光将可以经济高效地制作周期为50和25nm的大面积周期结构.最后,测量了该光栅对波长为13.4nm 同步辐射光的衍射光强度,并且推算得出该光栅的1级和2级衍射效率分别为4.41%和0.49%,与理论设计值比较符合.实验结果与理论模拟结果的对比表明该光栅侧壁陡直,Gap/period的控制也与设计值符合. 关键词： 软X射线金属型透射光栅 严格耦合波方法 衍射效率 软X射线干涉光刻     

A novel integrated method realizing iteratively optimized modeling for proximity field patterning nanolithography

Processing methods used in photonics and nanotechnology have many limitations hindering the ability to realize devices and restricting the actual number of applications. An ideal processing method should require low-cost equipment, be able to produce very fine details, and be scalable to process large area specimens in an acceptable amount of time. Proximity field nanopatterning (PnP) is a lithography method possessing these features. By using interference patterns produced by a two-dimensional phase mask, the technique is able to generate a submicron detailed exposure on a millimeter-size slab of light sensitive photopolymer, which is then developed like a photographic plate to reveal three-dimensional interference patterns from the phase mask. While it is possible to use computer aided simulations to obtain the interference patterns produced by a mask with a certain pattern, the inverse problem of producing a mask for a desired interference pattern cannot be solved in the same way due to the intricacies of light interactions involved in producing the final interference pattern. An alternative method is to iteratively optimize the phase mask so that the interference patterns obtained converge to the desired pattern. The method is elaborated in this article.     

Three‐dimensional optical laser lithography beyond the diffraction limit

Direct laser writing has become a versatile and routine tool for the mask‐free fabrication of polymer structures with lateral linewidths down to less than 100 nm. In contrast to its planar counterpart, electron‐beam lithography, direct laser writing also allows for the making of three‐dimensional structures. However, its spatial resolution has been restricted by diffraction. Clearly, linewidths and resolutions on the scale of few tens of nanometers and below are highly desirable for various applications in nanotechnology. In visible‐light far‐field fluorescence microscopy, the concept of stimulated emission depletion (STED) introduced in 1994 has led to spectacular record resolutions down to 5.6 nm in 2009. This review addresses approaches aiming at translating this success in optical microscopy to optical lithography. After explaining basic principles and limitations, possible depletion mechanisms and recent lithography experiments by various groups are summarized. Today, Abbe's diffraction barrier as well as the generalized two‐photon Sparrow criterion have been broken in far‐field optical lithography. For further future progress in resolution, the development of novel tailored photoresists in combination with attractive laser sources is of utmost importance.     

Writing a superlattice with light forces

In atom lithography the conventional roles played by light and matter are reversed. Instead of using a solid mask to pattern a light beam, a mask of light is used to pattern a beam of neutral atoms. In this paper we report the production of different chromium dot arrays with quadratic symmetry. The lattice period depends on the relative polarization and the phase of the two standing waves generating the light mask. A small angular misalignment of the laser beams breaks the high symmetry and a chromium superlattice is written, that is a continuous periodic change between two different quadratic lattices. The structures exhibit lines with a FWHM below 50 nm and clearly separated chromium dots with a FWHM below 70 nm. Received: 30 September 1999 / Revised version: 14 February 2000 / Published online: 5 April 2000     

Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.     

三光束激光干涉光刻的实现方法

分析了多光束空间分布产生的误差对图形的影响,通过计算优化得到三光束产生的干涉图形在整个面内有着更好的图形稳定性。利用氦镉激光光源通过特定的光学系统形成空间分布近似旋转对称的三束光, 对光致抗蚀剂进行干涉曝光,制作出了周期600 nm、高度350 nm的蜂窝状点阵,测量结果表明该系统具有很好的图形重复性和稳定性,同时降低了对于光学光路的精密性要求。     

Blue laser lithography for making antireflective submicron structures on silicon

The application of blue laser lithography for creating antireflective submicron structures on a crystalline silicon substrate was evaluated. The assembled blue laser lithography system was obtained by modifying a commercial blue laser optical pickup head and consisting of a 405-nm-wavelength blue laser and a 0.85-numerical-aperture objective lens. Si substrates were patterned with submicron column patterns of various periods and aspect ratios by blue laser lithography using a sputtered Ge-Sb-Sn-O layer as a resist. The reflectance of the patterned Si substrate decreased to 3% on average in the 300–1000 nm wavelength range, with a low sensitivity to the angle of incident light. Such patterned substrates showed potential for application in crystalline Si solar cells.