Tunable two-mirror interference lithography system for wafer-scale nanopatterning

We have designed and analyzed a novel (to the best of our knowledge) two-beam interference lithography system for large-area (wafer-level) nanopatterning with enhanced tunability of pattern periodicities. The tunable feature has been achieved by placing two rotational mirrors in the expanded beam paths at regulated angles for a desired period. Theoretical analyses show that the effective pattern coverage area greater than a 4 in. (10 cm) wafer scale is attainable with a 325 nm (30 cm coherence length) HeCd laser and 4 in. (10 cm) mirrors, while the pattern coverage area is restrained by the overruling effects between the optical coherence and mirror size. The experimental results also demonstrate uniform nanopatterns at varying periods (250-750 nm) on 4 in. (10 cm) substrates, validating the theoretical analyses. The tunable two-mirror interferometer will offer a convenient and robust way to prepare large-area nanostructures on a wafer scale with superior tunability in their pattern periodicities.     

双尺度织构的激光光刻工艺

搭建了双光束激光干涉光刻系统和激光快速扫描系统。利用干涉光刻系统,实现了不同周期、不同深度、大面积的表面规则光栅织构的构筑。利用激光快速扫描器的二维扫描功能,通过控制激光功率和扫描速度,对曝光量和填充线条间距进行了优化。提出了两种双尺度复合织构的制备方法:一种是在激光快速扫描系统中对抗蚀剂表面分别进行x, y方向的扫描光刻,然后在干涉光刻系统中进行双光束干涉光刻;另一种是在激光干涉光刻系统中进行两次曝光,每次曝光的入射角不同。实验结果表明:这两种方法在制备双尺度复合织构方面具有快速、廉价、操作简易等优点。     

Design of a monolithic tunable laser based on equivalent-chirp grating reflectors

A Vernier-tuned distributed Bragg reflector (DBR) semiconductor laser is an effective monolithic approach for wide wavelength tunability, at the expense, however, of costly electron-beam lithography during fabrication. In this Letter, a tunable laser design with equivalent-chirp based, flat-top envelope grating reflectors is proposed that can be implemented easily by conventional two-beam interference lithography. The principle is described, and a detailed design shows uniform output power (0.08 dB variation) and excellent side-mode suppression ratio (47 dB minimum) within a wide tuning range (>32 nm) through numerical simulation.     

大面积10000线/毫米软X射线金属型透射光栅的设计、制作与检测

基于严格的矢量耦合波理论,优化设计了用于13.4nm软X射线干涉光刻的透射型双光栅掩模版. 采用电子束光刻技术,在国内首次成功制作了周期为100nm的大面积金属型透射光栅.光栅面积为1.5mm ×1.5mm,Cr浮雕厚度为50nm,Gap/period为0.6,衬底Si₃N₄厚度为100nm. 此光栅将用于上海光源软X射线干涉光刻实验站.利用其1级衍射光和2级衍射光将可以经济高效地制作周期为50和25nm的大面积周期结构.最后,测量了该光栅对波长为13.4nm 同步辐射光的衍射光强度,并且推算得出该光栅的1级和2级衍射效率分别为4.41%和0.49%,与理论设计值比较符合.实验结果与理论模拟结果的对比表明该光栅侧壁陡直,Gap/period的控制也与设计值符合. 关键词： 软X射线金属型透射光栅 严格耦合波方法 衍射效率 软X射线干涉光刻     

Peculiarities of spontaneous grating generation in light-sensitive waveguide layers during holographic grating formation

The generation of spontaneous (noise) gratings during the simultaneous formation of a holographic grating in thin (on the order of the cutoff thickness of the TE₀ waveguide mode) AgCl-Ag films by two laser beams with λ = 532 nm and polarization vectors that make an angle of 45° with the plane of incidence have been studied. The electron microscopy images and diffraction patterns have revealed a significant difference of the spontaneous-grating structure from the structure obtained under irradiation by one laser beam. The spontaneous gratings have a significant spread in the directions of their wave vector, and the diffraction pattern (recorded using a probe beam with λ = 337 nm) has the form of a bundle of diverging arcs that intersect at one point. This difference is caused by self-diffraction from the holographic grating, which is responsible for the main diffraction peaks with odd orders, the growth of spontaneous gratings because of the interference of the beams diffracted by the holographic grating with the waveguide TE₀ modes scattered in the film, and silver transport to the interference minima. The diffraction patterns are quantitatively analyzed and the period of the new (formed under two-beam irradiation) spontaneous gratings is calculated. The calculation results are in good agreement with the experimental data.     

激光干涉光刻法制作100 nm掩模

 介绍了一种利用激光干涉光刻技术得到特征图形,并通过离子束刻蚀将图形转移到铬层上,从而获得掩模的方法。针对掩模透光率以及对干涉图形对比度可能产生影响的两个参数分别进行了数值仿真,从而证明此方法的可行性和参数的优化选择。自搭干涉光刻实验系统,用257 nm的激光光源实现光刻,得到特征尺寸为100 nm的图形,再经过离子束刻蚀,最终得到周期200 nm、线宽100 nm的掩模。     

三光束激光干涉光刻的实现方法

分析了多光束空间分布产生的误差对图形的影响,通过计算优化得到三光束产生的干涉图形在整个面内有着更好的图形稳定性。利用氦镉激光光源通过特定的光学系统形成空间分布近似旋转对称的三束光, 对光致抗蚀剂进行干涉曝光,制作出了周期600 nm、高度350 nm的蜂窝状点阵,测量结果表明该系统具有很好的图形重复性和稳定性,同时降低了对于光学光路的精密性要求。     

Solid-state dye laser with moiré gratings

We fabricated distributed-feedback (DFB) solid-state dye lasers with moiré gratings. We formed a moiré grating pattern by superimposing two grating patterns with a rotation angle. The moiré gratings were fabricated by an “etchless” process utilizing a two-beam interference method. The gratings were coated with solidified rhodamine-B. The five laser devices were pumped with the second harmonic generation of a Nd:YAG laser and we obtained narrow-banded laser oscillations at 590, 600, 610, 620, and 630 nm wavelength. Full widths at half maximum of laser spectra were less than 0.5 nm. The results indicated that a moiré fringe can function as a resonator of DFB solid-state dye lasers.     

The three-dimensional photonic crystals coated by gold nanoparticles

We report on the fabrication of metallodielectric photonic crystals by means of interference lithography and subsequent coating by gold nanoparticles. The grating is realized in a SU-8 photoresist using a He-Cd laser of wavelength 442 nm. The use of the wavelength found within the photoresist low absorption band enables fabricating structures that are uniform in depth. Parameters of the photoresist exposure and development for obtaining a porous structure corresponding to an orthorhombic lattice are determined. Coating of photonic crystals by gold nanoparticles is realized by reduction of chloroauric acid by a number of reductants in a water solution. This research shows that the combination of interference lithography and chemical coating by metal is attractive for the fabrication of metallodielectric three-dimensionally periodic microstructures.     

Experimental verification of the electromagnetic spectral interference law using a modified version of the Young's interferometer

We present a method to verify the electromagnetic spectral interference law experimentally, which connects the combined two-beam usual Stokes parameters with the corresponding single beam usual Stokes parameters. Using polarizers and phase retarders in a modified version of the Young's interferometer, the usual Stokes parameters and the generalized Stokes parameters are determined for a laser beam. The experimentally determined single point (usual) Stokes parameters at an axial point in the observation plane for the combined beam are compared with their theoretically expected values obtained by putting the experimental data in the electromagnetic spectral interference law. A fairly good agreement is found between the two values. Not only does the proposed method provides a comparison between the two kinds of Stokes parameters but also validates the role of the generalized Stokes parameters as modulation parameters for the usual Stokes parameters.     

T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation

Femtosecond laser as a maskless lithography technique is able to fabricate structures far smaller than the diffraction limit to a value within sub-micrometer resolution. We present the femtosecond laser lithography without ablation on the positive photoresist is applied in fabricating T-shaped gate AlGaN/GaN HEMT. The feature sizes of femtosecond laser lithography were determined by the incident laser power, the scan speed of the laser focus, the number of scan times, and the substrate materials. T-shaped gate with the smallest gate length 204?nm could be fabricated by dielectric-defined process using femtosecond laser lithography. The fabricated AlGaN/GaN HEMT with 380?nm T-gate exhibits a maximum drain current density of 500?mA/mm and a maximum peak extrinsic transconductance of 173?mS/mm.     

Nanotribological properties of silicon surfaces nanopatterned by laser interference lithography

The problems caused by the adhesive force and friction force become more critical when the size of M/NEMS devices shrinks to micro/nano-scale. The nanotexture-patterned surface is an effective approach to reduce friction force on micro/nano-scale. Laser interference lithography is an attractive method to fabricate micro/nanotextures, which is maskless and allows large area periodical structures to be patterned by a couple of seconds’ exposure in a simple equipment system. We fabricate various nanogrooves with different pitch and space width on silicon wafers by laser interference lithography and chemical etching. We investigate the nanotribological properties of the patterned surfaces by AFM/FFM. We show that friction on the nano/micro-scale is related to the coverage rate of the nanogrooves, which decreases with increase in the space width and decrease in the pitch.     

利用铌酸锂晶体制作体全息光栅的设计性实验

利用双光束干涉,通过控制双光束的记录角度,在铌酸锂晶体中写入光折变体全息布拉格光栅.将该光栅应用于光通信系统中作为滤波器使用,利用ASE光源和光谱仪对其进行测试,在1 548nm波长处获得了峰值半高全宽为4nm,衍射效率为10%的滤波效果.     

基于分步式压印光刻的激光干涉仪纳米级测量及误差研究

针对在未做隔离保护处理的环境中，基于Michelson干涉原理的激光干涉仪测量系统存在严重的干扰误差，不适合分步式压印光刻纳米级对准测量的要求.采用Edlen公式的分析及计算，不仅在理论上揭示出环境温度、湿度、气压等变化对激光干涉仪测量准确度的影响，而且证明影响测量准确度的最大干扰源是空气流动的结果.通过气流隔离措施和系统测量反馈校正控制器，能够实时补偿激光干涉仪两路信号的相差.最终，测量漂移误差在10 min内由13 nm降低到5 nm以内，满足压印光刻在100 mm行程中达到20 nm定位准确度要求.     

InP基1×4多模干涉耦合器的设计与制作

在密集波分复用系统中,多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀工艺制作了1×乘4多模干涉型耦合器.利用自动对准波导耦合测试系统对所制作器件的插入损耗和出光平衡度进行测量.测试结果表明,该器件在1 550 nm波长附近的40 nm带宽范围内获得了约2.6 dB的通带平坦度,在1 550 nm通信波长处,器件的插入损耗低于10 dB.     

InP基1×4多模干涉耦合器的设计与制作

在密集波分复用系统中,多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀工艺制作了1×乘4多模干涉型耦合器.利用自动对准波导耦合测试系统对所制作器件的插入损耗和出光平衡度进行测量.测试结果表明,该器件在1 550nm波长附近的40nm带宽范围内获得了约2.6dB的通带平坦度,在1 550nm通信波长处,器件的插入损耗低于10dB.     

亚微米结构的可见光聚合全息制作

报道用激光全息技术结合可见光光聚合制作周期结构的方法和物理机理;对多束激光相干产生的空间干涉光场进行了讨论;提供了一组激光束的偏振态的最佳组合,使激光全息技术制作理想的亚微米单晶结构更有效和快捷.分析了曝光量与制作效果的关系,此法可实现小球自排无法实现的大幅度占空比调节.与紫外光光聚合相比,可见光光聚合可在监视下调节,操作方便安全. 关键词： 激光全息技术 光学晶格 光子晶体     

Real-time measurement of nano-particle size using differential optical phase detection

We demonstrate a size sensing technique for nano-particles using optical differential phase measurement by a dual fiber interferometer through phase-generated carrier(PGC) demodulation. Nano-particle diameters are obtained from the differential phase shift as a result of adding an optical scattering perturbation into two-beam interference. Polystyrene nano-particles with diameters from 200 to 900 nm in a microfluidic channel are detected using this technique to acquire real-time particle diameters. Compared with amplitude sensing with over 10 mW of laser irradiance, particle sizing by PGC phase sensing can be achieved at a laser power as low as1.18 mW. We further analyze major sources of noise in order to improve the limits of detection. This sensing technique may find a broad range of applications from the real-time selection of biological cell samples to rare cell detection in blood samples for early cancer screening.     

Fabrication of 50 nm period gratings with multilevel interference lithography

We have developed a multilevel interference lithography process to fabricate 50 nm period gratings using light with a 351.1 nm wavelength. In this process multiple grating levels patterned by interference lithography are overlaid and spatial-phase aligned to a common reference grating using interferometry. Each grating level is patterned with offset phase shifts and etched into a single layer to achieve spatial-frequency multiplication. The effect of the multilayer periodic structure on interference lithography is examined to optimize the fabrication process. This process presents a general scheme for overlaying periodic structures and can be used to fabricate more complex periodic structures.     

微分干涉差共焦显微膜层微结构缺陷探测系统

多层膜极紫外光刻掩模"白板"缺陷是制约下一代光刻技术发展的瓶颈之一,为提高对掩模"白板"上的膜层微结构缺陷的分辨能力,提出了一种微分干涉差共焦显微探测系统方案。基于标量衍射理论,计算了系统横向和轴向分辨率。利用MATLAB建模仿真,在数值孔径为0.65、工作波长为405 nm时,分析比较了微分干涉差共焦显微系统、传统显微系统和共焦显微系统的分辨率。结果表明微分干涉差共焦显微系统具有230 nm的横向分辨率和25 nm轴向台阶高度差的分辨能力(对应划痕等缺陷形式)。此外,仿真和分析了实际应用中探测器尺寸、样品轴向偏移等的影响,模拟分析了膜层微结构缺陷的探测,结果表明本系统可以探测200 nm宽、10 nm高的微结构缺陷,较另外两种系统有更好的探测能力。