利用干涉光刻技术制备LED表面微纳结构

为了制备大面积周期性微纳米结构以提高LED的发光效率,建立了劳厄德(Lloyd)干涉光刻系统。简单分析了该干涉光刻系统的工作原理,并介绍了利用干涉曝光工艺制备一维光栅、二维点阵、孔阵列等纳米结构图形的具体实验过程。最后对纳米图形进行结构转移,制备出了金属纳米结构。实验结果表明:利用劳厄德干涉光刻系统,可以在20 mm×20 mm大小的ITO衬底上稳定制备出周期为450 nm的均匀光栅或二维点阵列图形结构,它们的占空比也是可以调节变化的。     

入射光束角度及强度偏差对多光束干涉光刻结果的影响

建立了多光束干涉光刻干涉场内光强分布的数学模型,仿真计算了双光束、三光束、四光束干涉曝光情况下,入射光束存在角度偏差以及各入射光强不同时的干涉图样,并与理想状态的模拟结果进行对比.结果表明:光束入射角度偏差主要影响干涉图样的形状和周期;入射光的光强不同是降低图形对比度的主要因素.利用402nm波长激光光源进行多光束干涉光刻实验.设定激光器输出功率32mW,每两束光夹角为16°,通过控制曝光、显影工艺,双光束干涉光刻产生周期为1.4μm的光栅、点阵和孔阵结构,三光束干涉光刻产生周期为1.7μm的六边形图形阵列.该模型可为利用干涉光刻技术制备微细周期结构,提高光刻图形质量,提供一定的理论参考.     

四激光束干涉光刻制造纳米级孔阵的理论分析

为提供一个在大范围内曝光出深亚微米甚至纳米级周期性密集图形的廉价的方法,研究了四激光束干涉光刻的原理,分析了干涉曝光的结果,并进行了计算机模拟.用现有的光源,如442 nm、365 nm、248 nm、193 nm激光,曝光得到的图形的临界尺寸容易做到180～70 nm.具有实际上无限制的焦深和容易实现的大视场.适合硅基CCDs、平场显示器的场发射电极阵列等光电子器件中大范围内超亚微米级的周期性孔阵或点阵结构图形的制作.     

激光干涉光刻法制作100 nm掩模

 介绍了一种利用激光干涉光刻技术得到特征图形,并通过离子束刻蚀将图形转移到铬层上,从而获得掩模的方法。针对掩模透光率以及对干涉图形对比度可能产生影响的两个参数分别进行了数值仿真,从而证明此方法的可行性和参数的优化选择。自搭干涉光刻实验系统,用257 nm的激光光源实现光刻,得到特征尺寸为100 nm的图形,再经过离子束刻蚀,最终得到周期200 nm、线宽100 nm的掩模。     

大面积金纳米线光栅的制备

利用激光干涉光刻和金纳米颗粒胶体溶液制备了宽度在100 nm以下且总面积达到平方厘米量级的金纳米线光栅结构.制备过程中,首先在表面镀有厚度约为200 nm的铟锡氧化物薄膜的面积为1 cm×1 cm的玻璃基片表面旋涂光刻胶,然后利用紫外激光干涉光刻制备光刻胶纳米光栅结构.有效控制干涉光刻过程中的曝光量、显影时间,获得小占...     

纳米压印多孔硅模板的研究

纳米压印模板通常采用极紫外光刻、聚焦离子束光刻和电子束光刻等传统光刻技术制备,成本较高.寻找一种简单、低成本的纳米压印模板制备方法以提升纳米压印光刻技术的应用成为研究的重点与难点.本文以多孔氧化铝为母模板,采用纳米压印光刻技术对纳米多孔硅模板的制备进行了研究.在硅基表面成功制备出纳米多孔阵列结构,孔间距为350—560 nm,孔径在170—480 nm,孔深为200 nm.在激发波长为514 nm时,拉曼光谱的测试结果表明,相对于单面抛光的硅片,纳米多孔结构的硅模板拉曼光强有了约12倍左右的提升,对提升硅基光电器件的应用具有重要的意义.最后,利用多孔硅模板作为纳米压印母模板,通过热压印技术,成功制备出了聚合物纳米柱软模板.     

用PAA模板法实现硅基纳米孔阵列结构

用二次阳极氧化方法制备出分立、双向贯通并且超薄（500—1000 nm）的多孔阳极氧化铝膜,贴合到硅片上进行干法刻蚀,实现图形转移,得到了硅基纳米孔阵列结构,并对工艺中影响图形转移质量的因素进行了探索.扫描电镜（SEM）测试结果表明该途径得到的纳米结构孔形态均匀且大面积有序,孔深度可达到125 nm.对该样品进行热氧化处理后进行光致发光（PL）测试,结果表明其光致发光机理是基于通常较微弱的TO声子辅助的硅带边发光,并实现了显著发光增强,对这种增强效果的物理机理进行了理论分析.该结构具有的独特光学特性为利用 关键词： 多孔阳极氧化铝模板 硅基纳米孔阵列结构 图形转移     

聚合物光波导的等离子体刻蚀工艺研究

等离子体干法刻蚀是聚合物光波导制备过程中一项关键工艺.利用感应耦合等离子体各向异性刻蚀工艺制备了聚合物脊形结构波导,研究了不同工艺参量(源功率、偏置功率、刻蚀腔室压强以及气体组分)对脊形波导刻蚀速率的影响.利用扫描电子显微镜对刻蚀后波导高度、侧壁垂直度及表面粗糙度进行分析,得到了高刻蚀速率和低粗糙度的优化工艺条件.实验...     

表面等离激元体干涉制备纳米光子晶体的模拟分析

利用表面等离激元短波长和近场增强效应的特性,用多束P偏振态相干光激发表面等离激元(SPPs),并优化干涉光刻的曝光参数,可获得高分辨率、高对比度周期性纳米结构.阐述了多束SPPs干涉法制备纳米光子晶体的原理,并得到了干涉场强度分布随光束增加的关系.随着干涉SPPs数目的增加,干涉场会复杂变化,对此进行了计算机模拟.模拟了三束SPPs和六束SPPs干涉的强度分布,并分析了调制技术干涉曝光结果,该方法适合光电子器件中大范围亚波长的周期性孔阵或点阵结构的制作以及纳米量级光子晶体的的制作,并可以有效降低制作成本.     

劳埃德式紫外激光干涉光刻实验

搭建了劳埃德式紫外激光干涉光刻系统,利用劳埃德镜产生双光束分波阵面干涉,通过精确调整、控制光束的入射角,设计了曝光图样.基础实验部分可以完成一维光栅制备,分析光栅周期与波长、入射角的关系;在拓展实验中,制备设计部分可以完成二维点阵或准晶结构制备,前沿拓展部分可以制备表面等离极化激元微腔.基于劳埃德式激光干涉光刻实验操作便捷、展示度高,同时涵盖光干涉原理的介绍和光路调整、样品制备和表征等实验内容,有助于学生掌握激光干涉光刻的实验技能.     

Design,optimization and fabrication of 2D photonic crystals for solar cells

This paper presents the optimization of 2D photonic crystals (PCs) onto Si wafers to improve the performance of c-Si PV cells. The objective is to find a structure capable of minimizing the reflectance of the Si wafer in the spectral range between 400 nm and 1000 nm. The study has been limited to PCs that can be fabricated and characterized with the tools and technology available and to dimensions in the same order as the visible light wavelength. PCs with different shapes and dimensions have been simulated and finally the optimum structure has been fabricated by a process based on laser interference lithography (LIL) and reactive ion etching (RIE). This optimized PC presents an average reflectance of 3.6% in the selected wavelength range, without any other material used as antireflective coating. This result means a drastic reduction in comparison with reflectance obtained out of the standard wet etch texturization used in current solar cell manufacturing lines.     

High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation

High throughput and low cost fabrication techniques in the sub-micrometer scale are attractive for the industry. Laser interference lithography (LIL) is a promising technique that can produce one, two and three-dimensional periodical patterns over large areas. In this work, two- and four-beam laser interference lithography systems are implemented to produce respectively one- and two-dimensional periodical patterns. A high-power single pulse of ∼8 ns is used as exposure process. The optimum exposure dose for a good feature patterning in a 600 nm layer of AZ-1505 photoresist deposited on silicon wafers is studied. The best aspect ratio is found for a laser fluence of 20 mJ/cm². A method to control the width of the sub-micrometer structures based on controlling the resist thickness and the laser fluence is proposed.     

Optimization of 1D photonic crystals to minimize the reflectance of silicon solar cells

This paper presents a process to easily fabricate photonic crystals (PCs) on silicon to increase the efficiency of solar cells by reducing the sunlight reflection in the front surface of the cell. The process, based on laser interference lithography (LIL) and reactive ion etching (RIE), allows creating nanostructures over large areas with different shapes and dimensions. The reflectance of the resulting surface depends on the height, pitch, width and shape of the created PC. In this work, these parameters have been optimized by computer simulation and the best PC so far found has been fabricated on silicon. We obtain a normal reflectance under 10% in the spectral region between 500 and 900 nm without any other material employed as antireflecting coating.     

Double-layer fabrication scheme for large-area polymeric photonic crystal membrane on silicon surface by multibeam interference lithography

We report on the fabrication of two-dimensional polymeric photonic crystal membranes on the surface of silicon using visible-light multibeam interference lithography. The structures are created by the interference of three beams of a green laser. A polymer buffer layer doped with a Rhodamine B laser dye, interlaid between the lithography layer and the silicon substrate, suppresses the effects of strong reflection and nonradiative absorption of silicon on the interference pattern. Large-area defect-free photonic crystal membranes are experimentally realized on silicon surface.     

Imprint lithography of pyramidal photonic pillars using hydrazine etching

An inexpensive method to produce a pyramidal-type 2D photonic structures in the silicon substrate was proposed. The method is based on the combination of imprint lithography and wet Si1 0 0 etching in water solution of hydrazine, which etches 1 1 1 faces much more slowly than others. Thermally grown SiO₂ mask for the hydrazine etching was used, because single Al mask cannot be well bonded to the substrate and tends to peel during the etching. It was revealed that transmittance in the infrared spectrum region of the patterned silicon decreases by about five times compared with that of flat silicon substrate and this decrease is almost independent of the angle of the incident beam. In the infrared region, decrease of transmittance of the patterned samples is directly proportional to the wave number. The shape of formed pyramids has strong influence on the transmittance. Decrease of the transmittance is much more rapid and larger in the case of sharpless pillars.     

Growth and optical characterization of dense arrays of site-controlled quantum dots grown in inverted pyramids

We report on the growth and optical properties of dense arrays of single GaAs/AlGaAs quantum dot (QD) heterostructures with pitches as small as 300 nm. The samples were grown by organometallic chemical vapor deposition in dense inverted pyramids on {1 1 1}B GaAs substrate pre-patterned using electron beam lithography and wet chemical etching. The growth conditions such as deoxidation and growth temperatures, growth rates, and V/III ratio, had to be chosen quite differently from those employed with micron-size pyramids. Low-temperature micro-photoluminescence and cathodoluminescence spectra of the samples show distinct luminescence from the QDs with a linewidth of less than 1 meV and uniform emission energy for an ensemble of 900 QDs. The possibility of incorporating such QD arrays inside optical microcavity structures is also discussed.     

Study on wetting properties of periodical nanopatterns by a combinative technique of photolithography and laser interference lithography

This study presents the wetting properties, including hydrophilicity, hydrophobicity and anisotropic behavior, of water droplets on the silicon wafer surface with periodical nanopatterns and hierarchical structures. This study fabricates one- and two-dimensional periodical nanopatterns using laser interference lithography (LIL). The fabrication of hierarchical structures was effectively achieved by combining photolithography and LIL techniques. Unlike conventional fabrication methods, the LIL technique is mainly used to control the large-area design of periodical nanopatterns in this study. The minimum feature size for each nanopattern is 100 nm. This study shows that the wetting behavior of one-dimensional, two-dimensional, and hierarchical patterns can be obtained, benefiting the development of surface engineering for microfluidic systems.     

硅纳米线尖端阵列的制备及其场发射性能研究

将银镜反应与金属催化化学刻蚀相结合,在室温附近成功地制备出了硅纳米线尖端阵列,其长度为4~7μm,中间部分的直径在100~300nm之间。该方法操作简单、高效、无毒、可控以及低成本,且不需要高温、复杂的设备,对环境也没有特殊要求。性能测试结果显示:该硅纳米材料能够有效实现电子发射,开启电场约为2.7V/μm(电流密度10μA/cm2处);硅纳米尖端阵列的场增强因子约为692,可应用在场发射器件之上。     

Blue laser lithography for making antireflective submicron structures on silicon

The application of blue laser lithography for creating antireflective submicron structures on a crystalline silicon substrate was evaluated. The assembled blue laser lithography system was obtained by modifying a commercial blue laser optical pickup head and consisting of a 405-nm-wavelength blue laser and a 0.85-numerical-aperture objective lens. Si substrates were patterned with submicron column patterns of various periods and aspect ratios by blue laser lithography using a sputtered Ge-Sb-Sn-O layer as a resist. The reflectance of the patterned Si substrate decreased to 3% on average in the 300–1000 nm wavelength range, with a low sensitivity to the angle of incident light. Such patterned substrates showed potential for application in crystalline Si solar cells.