锥形半导体激光芯片的光刻工艺研究

针对锥形半导体激光器中的脊形波导区宽度较小的问题,对半导体激光芯片制造中的刻蚀标记及刻蚀方法进行了研究。提出对于锥形半导体刻蚀中的脊型区域和锥形区域,采用不同精度的双标记刻蚀方法,细化对脊形波导和锥形波导的刻蚀中的对准问题,并使光刻标在不同的光刻版上相错位排列,在相应光刻版中相互遮挡,反复刻蚀中保证相应的光刻标清晰、完整。刻蚀后的芯片在电流为7 A时获得了中心波长963nm、连续功率4.026 W、慢轴方向和快轴方向激光光束参数乘积分别为1.593 mm·mrad和0.668 mm·mrad的激光输出。

Photoetching of Tapered Diode Laser Wafer

For the very narrow ridge waveguide width, the etching marks and etching methods in the manufacturing of the semiconductor tapered laser chip were studied in this paper. The double photo-lithography alignment mark using two different precisions for the ridge area and the tapered area was proposed to refine the alignment in the etching of ridge waveguide and tapered waveguide. The pho-tolithography alignment marks were arranged in different place in different photolithography figure, and they interacted each other in order to keep the photolithography alignment marks clear and com-plete in repeated etching. By using this method, the etched chip delivers 4. 026 W CW output at 7 A current with the center wavelength of 963 nm, and the slow and fast direction beam quality is 1. 593 mm·mrad and 0. 668 mm·mrad, respectively.