Luminescence properties of ZnS：Cu, Eu semiconductor nanocrystals synthesized by a hydrothermal process

ZnS:Cu, Eu nanocrystals with an average diameter of ～ 80 nm are synthesized using a hydrothermal approach at 200 C. The photoluminescence (PL) properties of the ZnS:Cu, Eu nanocrystals before and after annealing, as well as the doping form of Eu, are studied. The as-synthesized samples are characterized by X-ray diffraction, scanning electron microscopy, inductively coupled plasma-atomic emission spectrometry, and the excitation and emission spectra (PL). The results show that both Cu and Eu are indeed incorporated into the ZnS matrix. Compared with the PL spectrum of the Cu mono-doped sample, the PL emission intensity of the Cu and Eu-codoped sample increases and a peak appears at 516 nm, indicating that Eu 3+ ions, which act as an impurity compensator and activator, are incorporated into the ZnS matrix, forming a donor level. Compared with the unannealed sample, the annealed one has an increased PL emission intensity and the peak position has a blue shift of 56 nm from 516 nm to 460 nm, which means that Eu 3+ ions reduce to Eu 2+ ions, thereby leading to the appearance of Eu 2+ characteristic emission and generating effective host-to-Eu 2+ energy transfer. The results indicate the potential applications of ZnS:Cu, Eu nanoparticles in optoelectronic devices.     

Temperature dependence of the luminescence properties of LaCl3：Ce crystal

The optical properties of LaCl3：Ce crystal are reported in this paper. Optical transmission spectrum, photoluminescence and time resolved photoluminescence spectra at different temperatures are investigated. It is found that optical transmittance is as high as 80% between 320 nm and 600 nm, and no obvious absorption band is found in this region. Emission intensity and decay time of photoluminescence are quite stable with the change of the temperature between 80 K and 500 K. No thermal quenching is present up to 500 K, and decay time keeps at 17±2 ns. With the increase of the temperature, the whole emission bands and excitation bands present broadening and overlapping, leading to the strengthening of re-absorption of the Ce^3＋ emission, which makes the emission spectra have a red shift trend.     

Preparation and Luminescent Properties of ZnO Microrods and Microtubes

Hexagonal ZnO microrods and sub-microrods have been prepared through thermal decomposition of an equimolar (0.1 M) aqueous solution of Zn(NO3)2.4H20 and (CH2)6N4 a~t 90~C for different times (10-46h). The microrods were transformed into hollow hexagonal ZnO microtubes when the growth time reached 46 h. The Raman spectra and the photoluminescent (PL) spectra were measured. The PL spectra of microrods consist of two strong narrow near-UV bands at 380 nm and 400 nm assigned to free exciton emission and exciton-exciton collision, respectively.The PL spectrum of ZnO microtubes show only one peak in the near-UV region with peak located at 380nm with FWHM of about 20nm assigned to free exciton emission. When the growth time increased, the peak intensity of near-UV band decreased.     

Structure and photoluminescence properties of Er3+-doped TiO2-SiO2 powders prepared by sol-gel method

Er 3+-doped TiO 2-SiO 2 powders are prepared by the sol-gel method,and they are characterized by high resolution transmission electron microscopy (HR-TEM),X-ray diffraction (XRD) spectra,and Raman spectra of the samples.It is shown that the TiO 2 nanocrystals are surrounded by an SiO 2 glass matrix.The photoluminescence (PL) spectra are recorded at room temperature.A strong green luminescence and less intense red emission are observed in the samples when they are excited at 325 nm.The intensity of the emission,which is related to the defect states,is strongest at the annealing temperature of 800 C.The PL intensity of Er 3+ ions increases with increasing Ti/Si ratio due to energy transfer between nano-TiO 2 particles and Er 3+ ions.     

Optical Properties of Co-BaTiO3/Mg（100） Nano-Composite Films Grown by Pulsed Laser Deposition Method

Co nanoparticles embedded in a BaTiO3 matrix, namely Co-BaTiO3 nano-composite films are grown on Mg（100） single crystal substrates by the pulsed laser deposition （PLD） method at 650℃. Optical properties of the CoBaTiO3 nano-composite films are examined by absorption spectra （AS） and photoluminescence （PL） spectra. The results indicate that the concentration of Co nano-particles strongly influences the electron transition of the Co BaTiO3 nano-composite films. The PL emission band ranging from 1.9 to 2.2eV is reported. The AS and PL spectra suggest that the band gap is in the range of 3.28-3.7eV.     

Growth and optical properties of Cr~（3＋）-doped CdWO_4 single crystals

A high-quality Cr 3+:CdWO4 single crystal at a size of approximatelyΦ25×80 mm is grown using the Bridgman method with CdO,WO3,and Cr2O3 as raw materials and their molar ratio of 100:100:0.5.The temperature gradient of solid-liquid interface at growth is approximately 50?C/cm and the growth rate is 0.05 mm/h.The X-ray diffraction(XRD),absorption,excitation,and emission spectra of different parts of the as-grown and O2-annealed crystals are investigated.Two strong broad optical absorption bands of about 472 and 708 nm are observed,and they are associated with the transitions 4 A2→ 4 T1 and 4 A2→ 4 T2.The weak 4 T2→ 2 E transition(the R-line)at 632 nm is also observed.The crystal-field parameter Dq and the Racah parameters B and C are estimated to be 1 412.4,776.8,and 3 427.6 cm? 1,respectively,according to the absorption spectra and crystal-splitting theory.A broadband fluorescence at about 1 000 nm due to 4 T2→ 4 A2 transition is produced by exciting the samples at 675 nm.After being annealed in an O2 atmosphere,the crystals become more transparent,while the effective light absorption of Cr 3+ ions is evidently enhanced and the emission intensity is also strengthened due to the reduction of oxygen vacancies in the CdWO4 crystal after annealing.     

Optical properties of phosphate glasses co-doped with Yb~（3＋） and silver nanoparticles

We report the fabrication and spectroscopic characterization of Yb^3＋-doped phosphate glass, also containing silver nitrate. Scanning electron microscopy（SEM） provides the evidence of the formation of silver nano-particles（SNPs）, which are formed as a consequence of melting and thermal decomposition of Ag NO3. Absorption spectra of the samples in the visible-to-near-infrared spectral range reveal the presence of bands centered at 410 nm associated with the SNP-plasmon resonance, and at 976 nm due to the Yb^3＋. Under 916-nm laser-diode pumping, the effect of the SNP reflects that： i） the fluorescence in the 950-nm–1150-nm spectral range is strongly enhanced（～ 30 times）, while the fluorescence decay time associated with the ^2F5/2→^2F7/2transition of Yb^3＋ increases 25%, and ii） the basic lasing properties（saturation pumping intensity, the emission and absorption cross sections） are substantially improved.     

PLE spectra analysis of the sub-structure in the absorption spectra of CdSeS quantum dots

The semiconductor CdSeS quantum dots (QDs) embedded in glass are analysed by means of absorption spectra, photoluminescence (PL) spectra and photoluminescence excitation (PLE) spectra. The peaks of absorption spectra shift to lower energies with the size of QD increasing, which obviously shows a quantum-size effect. Using the PLE spectra, the physical origin of the lowest absorption peak is analysed. In PLE spectra, the lowest absorption peak can be deconvoluted into two peaks that stem from the transitions of 1S_3/2--1S_e and 2S_3/2--1S_e respectively. The measured energy difference between the two peaks is found to decrease with the size of QD increasing, which agrees well with the theoretical calculation for the two transitions. The luminescence peak of defect states is also analysed by PLE spectra. Two transitions are present in the PLE, which indicates that the transitions of 1S_3/2--1S_e and 2S_3/2--1S_e are responsible for the defect states luminescence.     

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Sb-doped ZnO thin films with different values of Sb content （from 0 to 1.1 at.%） are deposited by the sol-gel dip- coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy （UV-VIS） spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance （〉 90%） in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence （PL） spectra revealed that the defect emission （around 450 nm） is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.     

Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition

Large-scale ZnO nanowire arrays are synthesized by electrodeposition with subsequent heat treatment in atmosphere ambient at 450-650℃. Photoluminescence （PL） is investigated at 295K. Abnormal PL properties of an unusual sharp emission at 485 nm and a broad ultraviolet emission which are different from the other works of ZnO PL before are observed. Field emission scanning electronic microscopy and transmission electron microscopy results show that the length of Zn 0 nanowires is nearly 5μm and their diameter is about 70 nm. X-ray diffraction and electron diffraction results reveal that the ZnO nanowires are a polycrystalline structure.     

新型Ba3SiO5:Eu荧光粉的合成及光谱性质

以BaCO_3、SiO_2、Eu_2O_3为原料在还原气氛下采用高温固相法制备了Ba_3SiO_5∶Eu荧光粉体。实验结果表明,制备Ba_3SiO_5的最佳工艺条件是Ba/Si比为3,1 200℃保温4 h。光谱分析表明,Ba_3SiO_5∶Eu荧光粉在254,365,410 nm激发下发射主峰为566 nm(Eu~(2+)的4f~n~(-1)5d→4f~n)宽带发射,量子效率分别为70%、50%、10%,荧光寿命为百纳秒级;以566 nm为监视波长测得激发谱为主峰在250～450 nm范围内的宽带发射,主峰为360 nm,且在410 nm出现小峰; Eu离子最佳掺杂浓度为5%,由发光强度随掺杂离子浓度变化曲线,可以得出Ba_3SiO_5中Eu离子能量传递是基于电四级-电四级作用。     

Synthesis and luminescence properties of Eu, Ce and Tb-activated Sr3La2(BO3)4 under UV excitation

The spectroscopic properties in UV-excitable range for the phosphors of Sr₃La₂(BO₃)₄:RE³⁺ (RE³⁺=Eu³⁺, Ce³⁺, Tb³⁺) were investigated. The phosphors were synthesized by conventional solid-state reactions. The photoluminescence (PL) spectra and commission international de I'Eclairage (CIE) coordinates of Sr₃La₂(BO₃)₄:RE³⁺ were investigated. The f-d transitions of Eu³⁺, Ce³⁺ and Tb³⁺ in the host lattices are assumed and corroborated. The PL and PL excitation (PLE) spectra indicate that the main emission wavelength of Sr₃La₂(BO₃)₄:Eu³⁺ is 611 nm, and Sr₃La₂(BO₃)₄:Ce³⁺ shows dominating emission peak at 425 nm, while Sr₃La₂(BO₃)₄:Tb³⁺ displays green emission at 487, 542, 582 and 620 nm. These phosphors were prepared by simple solid-state reaction at 1000 °C. There are lower reactive temperature and more convenient than commercial phosphors. The Sr₃La₂(BO₃)₄:Tb³⁺ applied to cold cathode fluorescent lamp was found to emit green light and have a major peak wavelength at around 542 nm. These phosphors may provide a new kind of luminescent materials under ultraviolet excitation.     

Photoluminescence in metal doped Ge0.15Se0.85 glass

PL and PLE spectra of a-Ge_0.15Se_0.85 samples doped with up to 1 at. % In, Cu and Fe are measured from 4 K - 150 K. The insensitivity of all aspects of PL (including fatigue) to In and Cu doping is noted. Fe doping significantly quenches PL and PLE spectra, and a slight modification of the PL temperature dependence is observed. An increase in the efficiency of non-radiative recombination through a structured impurity mechanism is proposed for Fe. Specific defect structures consistent with PL and PA measurements are suggested with preferred inclusion of Fe²⁺ at a Ge site.     

Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix

This paper deals with the sol-gel elaboration and defects photoluminescence (PL) examination of Al₂O₃ nanocrystallites (size ∼30 nm) confined in glass based on silica aerogel. Aluminium oxide aerogels were synthesized using esterification reaction for hydrolysis of the precursor and supercritical conditions of ethyl alcohol for drying. The obtained nanopowder was incorporated in SiO₂ host matrix. After heating under natural atmosphere at 1150 °C for 2 h, the composite Al₂O₃/SiO₂ (AS) exhibited a strong PL bands at 400-600 and 700-900 nm in 78-300 K temperature range. PL excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) were responsible for the bands at 400-600 and 700-900 nm, respectively.     

Study of photophysical properties AlBaq5

Pure and Ba²⁺ doped Alq₃ complexes were synthesized by simple precipitation method at room temperature, maintaining stoichiometric ratio. These complexes were characterized by XRD, UV–vis and FT-IR and photoluminescence (PL) spectra. XRD analysis reveals the polycrystalline nature of the synthesized complexes, while UV and FTIR confirm the molecular structure and the completion of quinoline ring formation and presence of quinoline structure in the metal complex. PL spectra of Alq₃ compared with barium doped complexes exhibit highest intensity in comparison to Alq₃ phosphor, which proves that barium enhances PL emission intensity of Alq₃ phosphor. The excitation spectra of the synthesized complexes are in the range of 300–480 nm with a broad peak in the range of 429–440 nm and shoulder at 380 nm, but with varying intensity. The emission wavelength lies in the range of 501–506 nm. Among all the synthesized complexes, AlBa₂q₅ exhibits maximum emission intensity. These remarkable properties of AlBaq₅ could be considered as promising materials as optoelectronic materials as well as green light emissive materials for OLEDs, PLLCD and solid state lighting applications.     

2018年5期 电子期刊

研究了不同Mn/Pb量比的Mn掺杂CsPbCl₃（Mn：CsPbCl₃）钙钛矿量子点的发光性质。Mn/Pb的量比增加引起的Mn²⁺发光峰的红移,被认为是来源于高浓度Mn²⁺掺杂下的Mn²⁺-Mn²⁺对。进一步研究了Mn：CsPbCl₃量子点的发光效率与Mn/Pb的量比之间的关系,发现随着量比达到5：1时,其发光效率明显下降。这种发光效率下降是由于Mn掺杂浓度引起的发光猝灭。Mn：CsPbCl₃量子点的变温发光光谱证实,随着温度的升高,Mn离子发光峰蓝移,线宽加宽,但其发光强度明显增加。     

Ce3+和Yb3+共掺杂的Y3Al5O12 可见及量子剪裁近红外发光性质

室温下观察了YAG：Ce和YAG：Ce,Yb材料在可见以及近红外区域的发光特性,并通过对Ce³⁺的5d能级辐射跃迁寿命以及Yb³⁺的²F_5/2能级布居时间和辐射跃迁寿命的比较研究,提出了光诱导的电荷转移态以及电荷转移辐射跃迁的能量传递机制,同时借助于能级图描述了从Ce³⁺到Yb³⁺的量子剪裁近红外发光过程。     

钬铥双掺钨酸镱钾激光晶体光谱参数计算

采用顶部籽晶提拉法（TSSG）生长了钬铥双掺钨酸镱钾（KHo_0.04Tm_0.06Yb_0.9（WO₄）₂）激光晶体。测试了该晶体的吸收及荧光光谱,计算了其光谱参数。实验结果表明：该晶体在890~1 000 nm范围吸收带较宽,半峰宽为90 nm,计算了主峰1 000 nm处吸收截面为16.92×10^-20 cm²;Tm³⁺在1 690~1 812 nm范围存在较宽的吸收带,半峰宽为118 nm,易于实现Yb→Ho、Yb→Tm、Tm→Ho的能量传递。根据Judd-Ofelt理论,计算了该晶体的光谱强度参数。根据Tm³⁺、Ho³⁺、Yb³⁺离子能级图,讨论了产生1 750~2 200 nm荧光发射的3种能量传递方式。最后计算了主峰2 030 nm处受激发射截面为3.47×10^-20 cm²,表明该晶体可作为2 μm波段优异的激光增益介质。     

Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties

In-doped Ga₂O₃ zigzag-shaped nanowires and undoped Ga₂O₃ nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In₂O₃ and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.