Energy structure and absorption spectra of colloidal CdS nanocrystals in gelatin matrix

We investigate the energy structure of colloidal CdS nanocrystals by measuring the UV–vis absorption spectra. Nanocrystals were synthesized by sol–gel method in a gelatin matrix in the size range from 2.5 to 3.9 (±0.2) nm. In order to interpret the UV–vis absorption spectra we calculate the energy spectrum of electron quasi-stationary states using the model of open nanocrystal as well as the hole stationary spectrum in a two-band approach. It is shown that the main contribution to the absorption spectrum is made by interband transitions 1S_3/2→1S_e and 1P_3/2→1P_e, and its shape is determined by the size distribution of nanoparticles. For this system the estimated values of the effective masses of the heavy hole and light hole are 1.44m₀ and 0.28m₀, respectively.     

CdSeS量子点的光吸收谱亚结构和光致发光激发谱分析

用光致发光激发(PLE)谱分析吸收谱的亚结构。实验样品是共熔法制备的CdSeS量子点玻璃,量子点的生长时间分别为2h和4h,高分辨透射电子显微镜(HRTEM)分析得到样品中量子点的平均直径分别为3．6nm和3．8nm。在室温下对样品进行了光吸收谱和光致发光激发谱研究。光吸收谱显示了量子尺寸效应,光致发光激发谱中低能端有两个明显的峰。考虑价带简并以及电子与空穴之间的相互作用,通过理论分析和数值计算,得到1S3/2-1Se和2S3/2-1Se的跃迁能量及其随量子点半径的变化,由此确认光致发光激发谱中的两个峰分别为1S3/2-1Se和2S3/2-1Se跃迁。     

Excitation and fluorescence spectra of disulfur monoxide

Excitation and fluorescence spectra of the 3400-Å system of S₂O are reported for the first time at low resolution. Fluorescence quantum yields for the upper vibronic states are measured as a function of absorption peaks (bands). Because of the unusually small quantum yields of some absorption peaks and because of the broader bandwidths of some fluorescence bands, multiple transitions are assumed to occur within each “single” absorption peak. Thirty-one fluorescence peaks are identified and grouped into five v″₂ progressions. Although v″₂ up to 8 was assigned, no new vibrational constants are derived because of the low spectral resolution.     

Luminescence characteristics of cobalt doped TiO2 nanoparticles

TiO₂ nanoparticles doped with two different concentrations of Cobalt, 0.02 and 0.04 mol, are prepared by sol–gel method. The crystalline phase of the doped and undoped nanoparticles and particle sizes are observed with X-ray diffraction and transmission electron microscope. FTIR confirms the bonding interaction of Co²⁺ in TiO₂ lattice framework. The UV absorption spectra of the doped material shows two absorption peaks in the visible region related to d–d electronic transitions of Co²⁺ in TiO₂ lattice. Compared to undoped TiO₂ nanoparticles, the cobalt doped samples show a red shift in the band gap. Steady state photoluminescence spectra give emission peaks related to oxygen defects. The decrease in the intensity ratio of UV/visible emission peaks confirms distortion of structural regularity and formation of defects after doping. The intensity ratio of different visible emission peaks is nearly same for undoped and 0.02 Co²⁺. However, this ratio decreases profoundly at 0.04 Co²⁺, due to concentration quenching effect. Photoluminescence excitation spectra, recorded at 598 nm emission wavelength, give different excitation peaks associated with oxygen vacancies and Co²⁺. Time resolved photoluminescence spectra give longer decay time for doped samples, indicating longer relaxation of conduction band electrons on the defect and on dopant sites.     

A time-resolved luminescence spectroscopy study of non-linear optical crystals K2Al2B2O7

We report the results of complex study of luminescence and dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals obtained using low-temperature luminescence-optical vacuum ultraviolet spectroscopy with sub-nanosecond time resolution under selective photoexcitation with synchrotron radiation. The paper discusses the decay kinetics of photoluminescence (PL), the time-resolved PL emission spectra (1.2–6.2 eV), the time-resolved PL excitation spectra and the reflection spectra (3.7–21 eV) measured at 7 K. On the basis of the obtained results three absorption peaks at 4.7, 5.8 and 6.5 eV were detected and assigned to charge-transfer absorption from O^2? to Fe³⁺ ions; the intrinsic PL band at 3.28 eV was revealed and attributed to radiative annihilation of self-trapped excitons, the defect luminescence bands at 2.68 and 3.54 eV were separated; the strong PL band at 1.72 eV was revealed and attributed to a radiative transition in Fe³⁺ ion.     

Preparation of Ca(1−x)EuxGa2S4 crystals and their photoluminescence, absorption and excitation spectra

The single crystal of CaGa₂S₄:Eu is expected as a useful laser material with a high quantum efficiency of light emission. However, as far as our knowledge is concerned, the systematic study of the mixed compounds of Ca_(1−x)Eu_xGa₂S₄ as a function of x has not been reported up to now. Here, we have first constructed the phase diagram of the CaGa₂S₄ and EuGa₂S₄ pseudo binary system, and show that it forms the solid solution. Then we have grown single crystals of these compounds. The maximum photoluminescence efficiency is achieved at x=0.25. From the three peak energies observed in the photoluminescence excitation (PLE) and absorption spectra, the 5d excited states are suggested to consist of three levels arising from the multiplets of Eu²⁺ ions.     

Luminescence and vibration spectra of zinc manganese diphosphates

The synthesis conditions for new luminescent materials, zinc manganese diphosphates Zn_{2? x}Mn_xP₂O₇ · 5H₂O) (0 ≤ x ≤ 2.0), are considered. The photoluminescence and its excitation spectra, IR absorption, and Raman spectra of these materials are studied. The red luminescence band with a peak at about 700 nm is shown to be due to the radiative transitions in Mn²⁺ ions, which are set in an octahedral oxygen environment. The range of concentration quenching of Mn²⁺ ion radiation is determined. Correlation of the luminescent and vibration properties of these compounds is discussed.     

Phonon spectra of stoichiometric rare-earth compound of EuGa2S4

Investigations of EuGa₂S₄ have been done on the photoluminescence (PL) related to the transition between 4f⁶5d and 4f⁷ configuration of the Eu²⁺ ion and its excitation (PLE) spectra, Raman scattering and infrared absorption. The energies of phonons coupled to the ground and the excited states of the transition are analyzed to be 34 and 19 meV from the shapes of the PL and PLE bands, respectively. The former corresponds to the energy of the Raman line showing the highest intensity. The latter is close to the value obtained from analysis of the temperature dependence of the half width of the PL band. These correspondences indicate that the relevant emission of EuGa₂S₄ surely has phonon-terminated character.     

Near-infrared emission bands of Er-doped YAP and LSO crystals

The ground state absorption (GSA), photoluminescence (PL) and photoluminescence excitation (PLE) spectra for Er(1.0 at%):YAP and Er(0.5 at%):LSO were measured at room temperature. Based on the GSA spectra, the radiative transition rates and luminescence branch ratios of erbium ions were determined by the Judd-Ofelt (J-O) method. In the range of 1400-1700 nm Er(1.0 at%):YAP has intense absorption at 1509 nm (0.96×10⁻²⁰ cm²), which is almost two times larger than the peak absorption of Er(0.5 at%):LSO. From the PL and PLE spectra, four intense emission bands around 850 nm (⁴S_3/2→⁴I_13/2), 980 nm (⁴I_11/2→⁴I_15/2), 1230 nm (⁴S_3/2→⁴I_11/2) and 1520 nm (⁴I_13/2→⁴I_15/2) were observed. The stimulated emission cross-sections of the four bands were calculated by the Fuchtbauer-Ladenberg (F-L) equation. The results suggest that Er(1.0 at%):YAP has potential to realize laser oscillation at 858 nm because of the relatively large simulated emission cross-section (1.76×10⁻²⁰ cm²). The temperature dependences of the PL spectra for the two crystals were also investigated in the range of 290-12 K. The ∼1520 nm emission presents continuous increase with temperature, while the emissions around 850, 1230 and 980 nm firstly increase with temperature, then reach their own largest values at the transition temperatures (about 100 K), and finally decrease with temperature. These results were well interpreted by the temperature dependence of multi-phonon process.     

Spectral Luminescence Properties of Potassium Aluminophosphate Glass Doped with Four-Valence Vanadium Complexes

Potassium aluminophosphate glass with the composition 30 K₂O-20 Al₂O₃-50 P₂O₅ (wt %) doped with four-valence vanadium was prepared and analyzed. Some physicochemical properties of the glass obtained and its absorption and luminescence spectra were investigated at 300 K. The existence of oxovanadium ions in the prepared glass was proved on the basis of the electronic absorption data. The bands observed in the electronic absorption spectrum were assigned to the e→b ₁ and e→a ₁ transitions. Intense luminescence of four-valence vanadium in the wavelength range 800–1100 nm was found. The average luminescence decay time amounts to 12 μs. __________ Translated from Optika i Spektroskopiya, Vol. 96, No. 6, 2004, pp. 926–928. Original Russian Text Copyright ? 2004 by Batyaev, Linnikov, Lipatova.     

Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects

The presence of an extrinsic photoluminescence (PL) band peaked at 1.356 eV at low temperature is observed, on a large number of self-assembled InAs and In_0.5Ga_0.5As quantum dot (QD) structures, when exciting just below the GaAs absorption edge. A detailed optical characterization allows us to attribute the 1.356 eV PL band to the radiative transition between the conduction band and the doubly ionized Cu _Ga acceptor in GaAs. A striking common feature is observed in all investigated samples, namely a resonant quenching of the QD-PL when exciting on the excited level of this deep defect. Moreover, the photoluminescence excitation (PLE) spectrum of the 1.356 eV emission turns out to be almost specular to the QD PLE. This correlation between the PL efficiency of the QDs and the Cu centers evidences a competition in the carrier capture arising from a resonant coupling between the excited level of the defect and the electronic states of the wetting layer on which the QDs nucleate. The estimated Cu concentration is compatible with a contamination during the epitaxial growth. Received 13 November 2001 / Received in final form 28 May 2002 Published online 19 July 2002     

The photoluminescence excitation spectra of multicomponent media

With no restrictions on the value of optical density, we derive an equation that describes the photoluminescence excitation spectra of separate components with overlapping absorption bands in a multicomponent medium. Based on the equation obtained, we propose methods for measuring the ratios of absorption optical densities of the components and quantum yields of their luminescence. The applicability of the proposed methods is demonstrated by measuring the characteristics of coumarin and porphyrin dissolved in different proportions in ethanol. We have also measured the quantum yield and luminescence decay time of the radiationinduced color centers F ₃ ⁺ in the lithium fluoride crystal and calculated probabilities of radiative and nonradiative transitions from the first excited singlet state of these centers.     

CdSxSe1-x纳米微晶的辐射跃迁过程

利用变温吸收光谱和光致发光光谱研究了CdS_xSe_1-x纳米微晶的辐射跃迁过程.由Varshni公式,拟合了微晶的吸收峰随温度的变化.根据变温发射光谱,研究了发光峰位置和温度的依赖关系,并分析了吸收峰和发光峰随温度变化的快慢.对发光的动力学过程.作了简单的分析.     

CdS_xSe_（1－x）纳米微晶的辐射跃迁过程

利用变温吸收光谱和光致发光光谱研究了ＣｄＳｘＳｅ（１－ｘ）纳米微晶的辐射跃迁过程．由Ｖａｒｓｈｎｉ公式，拟合了微晶的吸收峰随温度的变化．根据变温发射光谱，研究了发光峰位置和温度的依赖关系，并分析了吸收峰和发光峰随温度变化的快慢．对发光的动力学过程．作了简单的分析．     

Luminescence study of cerium-doped La2Hf2O7: Effects due to trivalent and tetravalent cerium and oxygen vacancies

X-ray excited emission spectra, photoluminescence excitation and emission spectra, optical reflectivity spectra, and pulsed X-ray and optical excited luminescence decay measurements are reported for cerium-doped La₂Hf₂O₇ powders prepared by solid state synthesis. A broad luminescence associated with oxygen vacancies is observed in the region 350–750 nm with a peak around 460 nm. The photoluminescence spectra and the number of oxygen vacancies vary for samples annealed in oxidizing or reducing atmospheres and with the temperature of the synthesis process. Increasing the cerium concentration reduces the oxygen-vacancy-related emission due to the presence of Ce⁴⁺. First principles calculations predict that Ce⁴⁺ can substitute in Hf sites; this is confirmed from the optical reflectivity spectrum of cerium-doped La₂Hf₂O₇. Photoluminescence excitation and emission spectra characteristic of Ce⁴⁺ charge transfer transitions and possibly Ce³⁺ are also observed. Although trivalent cerium may be present, no emission observed from cerium-doped La₂Hf₂O₇ can be attributed to Ce³⁺ in La sites.     

Photoluminescence and luminescence excitation spectra in ZnSiP2

Summary Measurements of photoluminescence and luminescence excitation spectra of ZnSiP₂ have been performed at 4.2K and two results were obtained. One is the observation of a new sharp emission line at 1.980 eV, due to the bound exciton associated with the pseudodirect gap. The other is the observation of another new series of absorption lines in the luminescence excitation spectrum of an emission line, at 1.984 eV, in addition to those reported previously. These results indicate that in ZnSiP₂ radiative transitions occur at both the indirect and the pseudodirect gaps. Paper presented at the ?V International Conference on Ternary and Multinary Compound?, held in Cagliari, September 14–16, 1982.     

Spectroscopic studies of erbium-doped potassium-lead double chloride crystals KPb<Subscript>2</Subscript>Cl<Subscript>5</Subscript>:Er<Superscript>3+</Superscript>: 1. Optical spectra and relaxation of excited states of the erbium ion in potassium-lead double chloride crystals

Optical spectra, intensities of radiative and nonradiative transitions, and luminescence kinetics in erbium-doped potassium-lead double chloride crystals KPb₂Cl₅:Er³⁺s(KPC:Er³⁺) were investigated. The crystals were grown by the Bridgman-Stockbarger method. Their absorption and luminescence spectra were studied experimentally. The crystal-matrix absorption edge was determined at 80 and 300 K. Intensity parameters, radiative transition probabilities, branching ratios, and nonradiative relaxation rates were estimated by the Judd-Ofelt method. The luminescence kinetics from the emitting levels ⁴ G _11/2, ² G _9/2, ⁴ S _3/2, and ⁴ F _9/2 upon selective excitation was studied.     

ZnSe/SiO2半导体量子点玻璃的光谱特性

对采用溶胶凝胶法制备的ZnSe/SiO2半导体量子点玻璃的光谱性质进行了测试分析.UV-Vis透射光谱中观察到光吸收边相对于体相半导体有明显蓝移.稳态发射光谱(PL)中观察到ZnSe纳米晶体的位于蓝区的基本呈高斯分布的弱的最低激子发射峰、强而宽的表面态发光带以及对应杂质能级的三个锐峰发光.时间分辨荧光光谱(TRPL)中观察到发光效率高的最低激子发射峰,并测量其荧光衰减寿命,经尾部拟合为28.5 ps.同时,结合有效质量近似(EMA)模型,估计ZnSe纳米晶体的平均粒径介于2.45~3.60 nm之间,尺寸分布基本呈高斯型.     

Luminescence properties of oxide coatings on aluminum alloys

This is a study of the luminescence properties of coatings formed on aluminum alloys by anodizing in electrolytic solutions based on oxalic, sulfuric, and tartaric-sulfonic acids. At least two emission centers, with band maxima in the ranges of 390–410 and 470–510 nm, can be reliably identified in the photoluminescence spectra. The first type of center is characterized by single-band photoluminescence excitation spectra and the second, by two-band spectra. An analysis of the two-band photoluminescence excitation (PLE) spectra in the range of 470–510 nm shows that the position of the narrow short-wavelength PLE spectrum near 272 nm is independent of the type of acid used in the anodization process. The position and shape of the other PLE spectral bands depend both on the type of acid used and on the processing of the alloy or alumina surfaces. It is assumed that defect-free alumina centers are responsible for the 272 nm PLE band, while the other photoluminescence bands are caused primarily by different divacancies of oxygen (F₂⁺ {F_2^+} , F ₂, and F₂⁺² {F_2^{+2}} centers) whose origin is governed by the type of electrolyte.     

Specific features of absorption and luminescence in CsBr: EuOBr crystals

The specific features of the absorption, photoluminescence, x-ray luminescence, thermally stimulated luminescence, and photostimulated luminescence spectra of CsBr: Eu²⁺ single crystals grown using the Bridgman method are investigated in the temperature range 80–500 K at the highest possible dopant content (0.1–0.4 mol % EuOBr in the batch) required for preparing perfect crystals. It is shown that an increase in the dopant content leads to a broadening of the absorption and photoluminescence excitation bands with maxima at wavelengths of 250 and 350 nm due to the interconfigurational transitions 4f⁷(⁸S_7/2) → 4f⁶5d(e _g , t_2g) in Eu²⁺ ions. The photoluminescence and photostimulated luminescence spectra of CsBr: EuOBr single crystals (0.1–0.4 mol % EuOBr) contain a band at a wavelength of λ_max=450 nm and bands at wavelengths of λ_max=508–523 and 436 nm. The last two bands are assigned to Eu²⁺-V_Cs isolated dipole centers and Eu²⁺-containing aggregate centers, respectively. It is revealed that the intensity of the luminescence associated with the aggregate centers (λ_max=508–523 nm) is maximum at an EuOBr content of less than or equal to 0.1 mol % and decreases with an increase in the dopant content. The possibility of forming CsEuBr₃-type nanocrystals that are responsible for the green luminescence observed at a wavelength λ_max=508–523 nm in CsBr: Eu crystals is discussed. The intensity of photostimulated luminescence in the CsBr: EuOBr crystals irradiated with x-ray photons is found to increase as the dopant content increases. It is demonstrated that CsBr: EuOBr crystals at a dopant content in the range 0.3–0.4 mol % can be used as x-ray storage phosphors for visualizing x-ray images with high spatial resolution.