Structural and Photoluminescence Properties of β-Ga2O3 Nanofibres Fabricated by Electrospinning Method

We have prepared the 13-Ga2 O3 nanofibres by electrospinning method followed by calcining in air at 900℃. The morphology and structure of the nanofibres are characterized by field emission scanning electron microscopy （FE-SEM）, x-ray diffraction （XRD） and Raman technique. These nanofibres have diameters ranging from 60 to 130hm and lengths up to several millimetres. Photoluminescence （PL） spectrum under excitation at 325 nm shows that theseβ-Ga2 O3 nanofibres have a blue emission peaking at 466nm, which may be attributed to defects such as the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.     

超强磁场下中子星壳层的电导率和磁星环向磁场欧姆衰变

磁星是指主要由磁场提供辐射能量的一类脉冲星.部分宁静状态下的磁星X射线有热起源,对应的温度kT为0.2—0.6 keV (1 eV=1.602×10~(–19) J),这比转动供能的脉冲星的典型温度值高很多,并且可以用黑体谱来拟合.对磁星的观测和理论研究是当前脉冲星领域一个重要的热点.结合物态方程,本文首先计算了在超强磁场下壳层的电导率;从统计上研究了由于环向磁场衰变,磁场能释放率与磁星软X射线光度之间的关系.通过分类和数值拟合,所得到的新的拟合公式能较好地反映磁星软X射线光度和旋转能损率之间的关系.研究发现,对于绝大多数高X射线光度的磁星,环向磁场欧姆衰变足够提供其观测的软X射线辐射;对于低X射线光度的暂变磁星,其软X射线辐射可能来源于旋转能损率、磁层流或粒子星风.随着对磁星理论和观测研究的深入,本文模型也会得到进一步的改进,理论结果将更好地符合磁星的软X射线观测.     

Structure and photoluminescence properties of Er3+-doped TiO2-SiO2 powders prepared by sol-gel method

Er 3+-doped TiO 2-SiO 2 powders are prepared by the sol-gel method,and they are characterized by high resolution transmission electron microscopy (HR-TEM),X-ray diffraction (XRD) spectra,and Raman spectra of the samples.It is shown that the TiO 2 nanocrystals are surrounded by an SiO 2 glass matrix.The photoluminescence (PL) spectra are recorded at room temperature.A strong green luminescence and less intense red emission are observed in the samples when they are excited at 325 nm.The intensity of the emission,which is related to the defect states,is strongest at the annealing temperature of 800 C.The PL intensity of Er 3+ ions increases with increasing Ti/Si ratio due to energy transfer between nano-TiO 2 particles and Er 3+ ions.     

衬底温度对HfO_2薄膜结构和光学性能的影响

采用直流磁控反应溅射法,分别在室温,200,300,400和500℃下制备了HfO2薄膜。利用X射线衍射(XRD)、椭圆偏振光谱(SE)和紫外可见光谱(UVvis)研究了衬底温度对HfO2薄膜的晶体结构和光学性能的影响。XRD研究结果显示:不同衬底温度下制备的HfO2薄膜均为单斜多晶结构;随衬底温度的升高,(-111)面择优生长更加明显,薄膜中晶粒尺寸增大。SE和UVvis研究结果表明:随衬底温度升高,薄膜折射率增加,光学带隙变小;制备的HfO2薄膜在250～850nm范围内有良好的透过性能,透过率在80%以上。     

线性和二次电光效应共同主导的非相干耦合空间孤子族

基于加偏压的单光子光折变晶体,理论推导了线性和二次电光效应共同主导下的亮孤子族和暗孤子族的解,数值研究了亮孤子族和暗孤子族的强度包络和稳定特性,讨论了线性和二次电光效应在孤子族形成中的不同作用.结果表明:线性和二次电光效应的相互作用能够增强亮孤子族的光折变非线性,而减弱暗孤子族的光折变非线性.此外,在传输过程中,亮孤子族的各个分量能够稳定传输;暗孤子族各个分量在较长传输距离时表现出不稳定性.     

射频溅射法制备3C-SiC和4H-SiC薄膜

利用射频溅射法在Si衬底上制备了SiC薄膜，并利用x射线衍射（XRD）和红外（IR）吸收谱对薄膜的结构、成分及化学键合状态进行了分析.XRD结果表明，低温制备的SiC薄膜为非晶相，而在高温下（＞800℃），薄膜呈现4HSiC和3CSiC结晶相.IR谱显示，溅射制备薄膜的吸收特性主要为Si—C键的吸收.此外，还利用原子力显微镜对薄膜的表面形貌进行了研究，并研究了样品的场发射特性. 关键词： 射频溅射 SiC薄膜 结构 表面形貌 场发射