椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为

采用VHF-PECVD技术高速沉积了不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明,沉积气压P_g=300 Pa时,β=0.81,其超出标度理论中β最大值为0.5范围,出现异常标度行为.这表明微晶硅薄膜高速生长中还存在其他粗糙化增加的因素,此粗糙化增加的因素与阴影作用有关. 关键词： 微晶硅薄膜 椭偏光谱法 生长机制 表面粗糙度     

低温制备微晶硅薄膜生长机制的研究

采用热丝化学气相沉积技术制备了一系列处于不同生长阶段的薄膜样品，用原子力显微镜系 统地研究生长在单晶硅衬底和玻璃衬底上薄膜表面形貌的演化.按照分形理论分析得到：在 玻璃衬底上的硅薄膜以零扩散随机生长模式生长；而在单晶硅衬底上，薄膜早期以有限扩散 生长模式生长，当膜厚超过某一临界厚度时转变为零扩散随机生长模式.岛面密度与膜厚的 依赖关系表明，在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值.Raman谱的测 量证实，玻璃衬底上薄膜临界厚度与非晶/微晶相变之间存在密切的关系.不同的衬底材料直 接影响反应 关键词： 生长机制 微晶硅薄膜 表面形貌 热丝化学气相沉积     

H2， He混合稀释生长微晶硅锗薄膜

采用H₂,He混合气体稀释等离子辅助反应热化学气相沉积法生长微晶硅锗薄膜,并在生长过程中对等离子体进行光发射光谱在线监测.结果表明：混合气体稀释法可以有效提高等离子体中的原子氢数目,降低等离子体中的电子温度;用XRD和光暗电导率表征样品的微结构和光电特性时发现,通过优化混合稀释气体中He和H₂气体的比例,能够减少薄膜中的缺陷态,促进薄膜<220>择优取向生长,有效改善微晶硅锗薄膜结构,提高光电吸收性能. 关键词： 化学气相沉积 微晶硅锗薄膜 光发射光谱 X射线衍射     

衬底温度和硼掺杂对p型氢化微晶硅薄膜结构和电学特性的影响

以B₂H₆为掺杂剂,采用射频等离子体增强化学气相沉积技术在玻璃衬底上制备p型氢化微晶硅薄膜.研究了衬底温度和硼烷掺杂比对薄膜的微结构和暗电导率的影响.结果表明：在较高的衬底温度下很低的硼烷掺杂比即可导致薄膜非晶化;在实验范围内,随着衬底温度升高薄膜的晶化率单调下降,暗电导率先缓慢增加然后迅速下降,变化趋势与硼烷掺杂比的影响极为相似.最后着重讨论了p型氢化微晶硅薄膜的生长机理. 关键词： p型氢化微晶硅薄膜 衬底温度 晶化率 电导率     

沉积速率对甚高频等离子体增强化学气相沉积制备微晶硅薄膜生长标度行为的影响

本文采用甚高频等离子体增强化学气相沉积技术制备了沉积速率系列不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明:沉积速率为0.08和0.24nm/s的低速沉积时,硅薄膜表面粗糙度接近,生长指数分别为β=0.21和β=0.20,对应有限扩散生长模式,此时沉积速率对硅薄膜生长影响不大,原因是低速沉积时成膜先驱物有足够时间迁移到能量低的位置;当沉积速率增加到0.66nm/s时,硅薄膜表面粗糙度明显增加,生长指数β=0.81,大于0.5,出现了异常标度行为,与低速沉积的生长模式明显不同,原因是高速沉积时成膜前驱物来不及扩散就被下一层前驱物覆盖,降低了成膜前驱物在薄膜表面的扩散,使表面粗糙度增加和生长指数β增大.β大于0.5的异常标度行为与阴影效应有关.     

微晶硅薄膜的制备及结构和稳定性研究

采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明：随衬底温度的升高，材料 中的氢含量总的趋势下降；傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含 量随衬底温度的升高而增加（在10¹⁹cm^-3量级）；与高衬底温度相 比，低衬底温度制备的材料易于后氧化，这说明低温制备材料的稳定性不好. 关键词： 甚高频等离子体增强化学气相沉积 微晶硅薄膜 傅里叶变换红外吸收     

微晶硅薄膜在粗糙表面的大面积均匀生长机制在

用氩气稀释硅烷作为反应气体,利用感应耦合等离子体在廉价衬底上大面积均匀沉积微晶硅薄膜．X射线衍射和拉曼分析表明衬底能显著地影响晶向,且微晶硅薄膜由小晶粒组成．台阶仪测试表明,微晶硅薄膜具有大范围均匀的特点．探针分析表明衬底附近区域的离子密度及电子温度分布均匀．基于以上结果可知：粗糙表面在晶体结构形成具有重要的作用,电感耦合等离子体反应器可以大面积均匀沉积薄膜．此外,氩气能影响反应过程并提高微晶硅薄膜特性．     

用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜

采用激光分子束外延技术,利用两步法,在Si单晶衬底上成功地外延生长出TiN薄膜材料.原子力显微镜分析结果显示, TiN薄膜材料表面光滑,在10 μm×10 μm范围内,均方根粗糙度为0842nm.霍耳效应测量结果显示,TiN薄膜在室温条件下的电阻率为36×10^-5Ω·cm,迁移率达到5830 cm²/V·S,表明TiN薄膜材料是一种优良的电极材料.X射线θ—2θ扫描结果和很高的迁移率均表明,高质量的TiN薄膜材料被外延在Si衬底 关键词： 激光分子束外延 TiN单晶薄膜 外延生长     

HW-MWECR-CVD法制备氢化微晶硅薄膜及其微结构研究

用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明，当反应气体中SiH₄浓度在3.6%—50%之间大范围变化时，μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明，在SiH₄浓度较大时制备的薄膜，其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH₄气体高度分解，等离子体高度电离. 关键词： 微波电子回旋共振化学气相沉积 氢化微晶硅薄膜 拉曼散射 X射线衍射     

热丝法制备纳米晶硅薄膜结构及沉积机制的研究

用热丝法制备了纳米晶硅薄膜．通过Raman散射谱及X射线谱，系统地研究了沉积气压P_g、高H₂稀释及衬底与钨丝之间距离对沉积速率、纳米硅薄膜的形成和结构等的影响．计算了沉积过程中的温度场分布．讨论了沉积过程中反应基元的输运和相关的气相反应，以及H在薄膜生长中的作用，由此分析了沉积参量对薄膜结构的影响，得到了与实验相一致的结果． 关键词：     

利用x射线小角散射技术研究微晶硅薄膜的微结构

采用x射线小角散射（SAXS）技术研究了由射频等离子体增强化学气相沉积（rf-PECVD）、 热丝化学气相沉积(HWCVD)和等离子体助热丝化学气相沉积(PE-HWCVD)技术制备的微晶硅（ μc-Si:H）薄膜的微结构.实验发现，在相同晶态比的情况下，PECVD沉积的μc-Si:H薄膜微 空洞体积比小，结构较致密，HWCVD沉积的μ-Si:H薄膜微空洞体积比大，结构较为疏松，PE -HWCVD沉积的μc-Si:H薄膜，由于等离子体的敲打作用，与HWCVD样品相比，微结构得到明 显改善.采用HWCVD二步法和PE-HWCVD加适量Ar离子分别沉积μc-Si:H薄膜，实验表明，微结 构参数得到了进一步改善.45°倾角的SAXS测量显示，不同方法制备的μc-Si:H薄膜中微空 洞分布都呈各向异性.红外光谱测量也证实了SAXS的结果. 关键词： 微晶硅薄膜 微结构 微空洞 x射线小角散射     

An optical study of the correlation between growth kinetics and microstructure of μc-Si grown by SiH4-H2 PECVD

Fully microcrystalline silicon, μc-Si, thin films have been deposited on corning glass by plasma enhanced chemical vapor deposition (PECVD) using SiH₄-H₂. The effects of the surface treatment and of the deposition temperature on microstructure of μc-Si films are investigated by “in situ” laser reflectance interferometry (LRI), “ex situ” spectroscopic ellipsometry (SE) and Raman spectroscopy. LRI indicated the existence of a “crystalline seeding time”, which is indicative of the crystallite nucleation, and depends on substrate treatments. Longer “crystalline seeding time” results in a lower density of crystalline nuclei, which grow laterally, yielding to complete suppression of the amorphous incubation layer and to growth of very dense, fully crystalline layer at a growth temperature as low as 120 °C.     

Microstructure of hydrogenated silicon thin films prepared from silane diluted with hydrogen

We report results obtained from FTIR and TEM measurements carried out on silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen. The hydrogen content, the microstructure factor, the mass density and the volume per Si-H vibrating dipoles were determined as a function of the hydrogen dilution. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (μc-Si:H). With increasing dilution the transition from amorphous to microcrystalline phase appears faster and the average mass density of the films decreases. The μc-Si:H films are mixed-phase void-rich materials with changing triphasic volume fractions of crystalline and amorphous phases and voids. Different bonding configurations of vibrating Si-H dipoles were observed in the a-Si:H and μc-Si:H. The bonding of hydrogen to silicon in the void- and vacancy-dominated mechanisms of network formation is discussed.     

The influence of boron concentrations on structural properties in disorder silicon films

In this work we present a detailed structural of a series of B-doped hydrogenated microcrystalline silicon (μc-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and B-doped polycrystalline silicon (poly-Si) films produced by step-by-step laser crystallization process from amorphous silicon. The influence of doping on the structural properties and structural changes during the sequential crystallization processes were monitored by Raman spectroscopy. Unlike μc-Si:H films, that consist of a two-phase mixture of amorphous and ordered Si, partially crystallized sample shows a stratified structure with polycrystalline silicon layer at the top of an amorphous layer. With increasing doping concentration the LO-TO phonon line in poly-Si shift to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. In μc-Si:H films, on the other hand, the Fano effect is not observed. The increase of doping in μc-Si:H films suppressed the crystalline volume fraction, which leads to an amorphization in the film structure. The structural variation in both μc-Si:H and poly-Si films leads to a change in hydrogen bonding configuration.     

Noise in boron doped amorphous/microcrystallization silicon films

Hydrogenated silicon (Si:H) film was grown by radio frequency plasma enhanced chemical vapor deposition (PECVD) method. The transition between hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H) was characterized by X-ray diffraction analysis. A semiconductor system was used to measure low frequency noise (1/f noise) and random telegraph switching noise of Si:H films. The results show that the 1/f noise of μc-Si:H is 4 orders of magnitude lower than that of a-Si:H and no RTS noise was found in both films. It also shows that using μc-Si:H instead of a-Si:H film as a sensing layer will enable the development of high performance uncooled microbolometer.     

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (μc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E ₀₄ (energy at which the absorption coefficient is equal to 10⁴ cm⁻¹), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.      

Initial growth of intrinsic microcrystalline silicon thin film: Dependence on pre-hydrogen glow discharge and substrate surface morphology

We found the decreases of amorphous incubation volume from Raman spectra and surface roughness from AFM in hydrogenated microcrystalline silicon (μc-Si:H) films deposited with a pre-hydrogen glow discharge. The above phenomena are attributed to the increase in the nuclei density as observed by AFM measurements. Substrate surface morphology of eagle2000 glass modified by wet etching also has a positive effect on the nucleation and crystalline formation. In addition, μc-Si:H doped layer is also beneficial for decreasing the amorphous incubation layer thickness because of surface roughness and crystallinity in the μc-Si:H doped layer.     

Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

A series of hydrogenated silicon thin films with varying silane concentrations have been deposited by using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The deposition process and the silicon thin films are studied by using optical emission spectroscopy (OES) and Fourier transfer infrared (FTIR) spectroscopy, respectively. The results show that when the silane concentration changes from 10% to 1%, the peak frequency of the Si—H stretching mode shifts from 2000 cm ^{- 1} to 2100 cm ^{- 1}, while the peak frequency of the Si—H wagging—rocking mode shifts from 650 cm ^{- 1} to 620 cm ^{- 1}. At the same time the SiH^*/H_α intensity ratio in the plasma decreases gradually. The evolution of the infrared spectra and the optical emission spectra demonstrates a morphological phase transition from amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). The structural evolution and the μc-Si:H formation have been analyzed based on the variation of H_α and SiH^* intensities in the plasma. The role of oxygen impurity during the plasma process and in the silicon films is also discussed in this study.     

Influence of Boron doping on microcrystalline silicon growth

Microcrystalline silicon (μc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasma-enhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent α are about 0.369 and 0.95 for the undoped thin film, respectively. Whereas, for the boron-doped μc-Si:H thin film, β increases to 0.534 and α decreases to 0.46 due to the shadowing effect.     

Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films

The scaling behaviour of surface roughness evolution of microcrystalline silicon (μc-Si:H) films prepared by very-high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic ellipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures P_g. The results suggest that films deposited at P_g = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at P_g = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode of μ c-Si:H deposited at P_g= 300 Pa is clearly different from that of μc-Si:H at P_g = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under P_g= 300 Pa, β>0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient.