金属诱导生长与超高真空化学气相沉积方法相结合制备多晶锗硅薄膜

采用金属Ni诱导与超高真空化学气相沉积(UHVCVD)相结合的方法，在热氧化硅衬底上生长了多晶锗硅薄膜.利用X射线衍射(XRD)、场发射扫描电镜(SEM)等对多晶锗硅薄膜的质量、表面形貌进行了测试分析，并就生长参数以及金属Ni对薄膜性能的影响进行了研究.结果表明：1)在420—500℃范围内，金属Ni具有明显的诱导作用；2)Ni层厚度对薄膜质量及形貌的影响使得晶粒尺寸随Ni厚度增加存在一极大值.在Ni层厚度为60nm时，能够获得晶粒尺寸均匀，晶粒大小为500—600nm，结晶质量良好的多晶锗硅薄膜. 关键词： 超高真空化学气相沉积 金属诱导 镍 多晶锗硅     

不同厚度的MgB_2超薄膜的制备和性质研究

本文报导了利用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition,HPCVD)在SiC(0001)衬底上制备干净的MgB2超薄膜.在背景气体压强、载气H2流量等条件一定的情况下,改变B2H6流量及沉积时间,制备不同厚度的MgB2超薄膜样品,并研究了超导转变温度Tc、剩余电阻率ρ(42K)、上临界场Hc2等与膜厚的关系.这系列超薄膜生长沿c轴外延,随膜厚度的变小Tc(0)降低,ρ(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于10nm厚的膜,Tc(0)~32.4K,ρ(42K)~124.92μΩ·cm,其表面连接性良好,平均粗糙度为2.72nm,上临界磁场Hc2(0K)~12T,零场4K时的临界电流密度Jc~107A/cm2,为迄今为止所观测到的10nm厚MgB2超薄膜的最高Jc值,这也证明了10nm厚的MgB2膜在超导纳米器件上具有很强的应用潜力.     

热丝化学气相沉积技术低温制备多晶硅薄膜的结构与光电特性

以金属W和Ta为热丝，采用热丝化学气相沉积 ，在250℃玻璃衬底上沉积多晶硅薄膜.研究了热丝温度、沉积气压、热丝与衬底间距等沉积参数对硅薄膜结构和光电特性的影响，在优化条件下获得晶态比X_c＞90%，暗电导率σ_d=10^-7—10-6Ω ^-1cm^-1，激活能E_a=0.5eV，光能隙E_opt≤1.3 eV的多晶硅薄膜. 关键词： 多晶硅薄膜 热丝化学气相沉积 光电特性     

椭圆偏振光谱表征单晶硅衬底上生长的非晶硅和外延硅薄膜

本文采用射频等离子体增强化学气相沉积(rf-PECVD)技术在单晶硅衬底上沉积了两个系列的硅薄膜. 通过对样品进行固定角度椭圆偏振测试, 结果表明第一个系列硅薄膜为非晶硅, 形成了突变的a-Si:H/c-Si异质结构, 此结构在HIT电池中有利于形成好的界面特性, 对于非晶硅薄膜采用通常的Tauc-Lorentz摇摆模型(Genosc)拟合结果很好; 第二个系列硅薄膜为外延硅, 对于外延硅薄膜, 随着膜厚增加晶化率降低, 当外延硅薄膜厚度为46 nm时开始非晶硅生长. 对于外延硅通常采用EMA模型(即将硅薄膜体层看成由非晶硅和c-Si构成的混合层)拟合结果较好, 当硅薄膜中出现非晶硅生长时, 将体层分成混合层和非晶硅两层, 采用三层模型拟合结果很好. 本文证实了椭偏光谱分析采用不同的模型可对单晶硅衬底上不同结构的硅薄膜进行有效表征.     

石英衬底上生长的高光学质量的纳米金刚石薄膜

采用射频等离子体增强的热丝化学气相沉积(RFHFCVD)技术在石英玻璃衬底上制备了表面光滑、晶粒致密均匀的纳米金刚石薄膜.用扫描电子显微镜(SEM)和台阶仪观测薄膜的表面形貌和粗糙度,x射线衍射(XRD)和Raman光谱表征膜层的结构,并用紫外可见近红外光谱仪测量其光透过率.实验结果表明,衬底温度、反应气压及射频功率对金刚石膜的结晶习性、表面粗糙度及光透过率均有很大程度的影响,其最佳值分别为700℃,2×133Pa和200W.在该最佳参量下经1h的生长即获得连续、平滑的纳米金刚石膜,其平均晶粒尺寸为约25 关键词： 纳米金刚石薄膜 射频等离子体增强热丝化学气相沉积 光透过率     

热丝加热电流对CH薄膜沉积速率和表面形貌的影响

 热丝辅助裂解法是结合气相沉积制备聚对二甲苯薄膜和热丝化学气相沉积而形成的一种制-CH薄膜的新方法。热丝辅助裂解法的最大特点就是在保持低衬底温度情况下可以获得高沉积速率，而热丝加热电流对薄膜沉积速率和薄膜表面形貌具有重要影响。研究表明，热丝加热电流越大，薄膜沉积速率越高，在加热电流9A时，薄膜沉积速率可达0.002mm/min，同时薄膜表面粗糙度随之增加，薄膜表面也开始出现其它元素污染，因此，一般热丝加热电流选择为7A附近。     

HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响

以甲烷、硅烷和氢气为反应气体,采用热丝化学气相沉积(HFCVD)法在单晶硅衬底上沉积纳米晶体碳化硅(SiC)薄膜.通过X射线衍射(XRD)和扫描电子显微镜(SEM)分别对SiC薄膜的晶体结构和表面形貌进行分析.实验发现氢气流量对碳化硅薄膜晶粒尺寸有很大影响,当氢气流量从10SCCM变化到300SCCM时,薄膜晶粒的平均尺寸将由较大的400 nm左右减小到40 nm左右.     

石墨烯/硅肖特基太阳能电池的光电特性

以甲烷作为反应气体,利用化学气相沉积法在硅衬底表面上沉积石墨烯薄膜,制备了石墨烯/硅肖特基太阳能电池.利用原子力显微镜和拉曼光谱观察了石墨烯薄膜的表面形貌,并用紫外-可见光光谱仪和光-电流测试仪器研究了石墨烯样品和太阳电池的光电特性.实验结果表明:制备的石墨烯薄膜厚度为几个原子层,薄膜表面均匀,并具有良好的电学特性,石墨烯/硅太阳能电池的能量转换效率可达3.7%.     

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利用微波电子回旋共振等离子体增强型化学气相沉积(ECR-PECVD)采用一步法直接在K9玻璃上低温沉积制备了多晶硅薄膜.研究了不同实验参数对薄膜沉积的影响,采用X射线衍射(XRD)、拉曼光谱、扫描电子显微镜(SEM)等实验分析方法对不同条件下制备的样品进行了晶体结构和表面形貌分析,并讨论了多晶硅薄膜沉积的最佳条件.实验结果表明,玻璃衬底上多晶硅薄膜呈柱状生长,并有一定厚度的非晶孵化层;较高氢气比例和衬底温度有利于结晶,薄膜的结晶率达到了62％;晶粒团簇的最大尺寸约为500nm.     

MgB2 超薄膜的制备和性质研究

利用混合物理化学气相沉积法在6H-SiC(001)衬底上制备干净的MgB₂超导超薄膜.在本底气体压强、载气氢气流量等条件一定的情况下,改变B₂H₆流量及沉积时间,制备得到不同厚度的系列MgB₂超薄膜样品,并研究了超导转变温度T_c、剩余电阻率ρ_(42K)、上临界磁场H_c2等与膜厚的关系.该系列超薄膜沿c轴外延生长,随膜厚度的变小,T_c(0)降低,ρ_(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于厚度为7.5 nm的MgB₂超薄膜,T_c(0) =32.8 K,ρ_(42K) =118 μΩcm,是迄今为止所观测到的厚度为7.5 nm的MgB₂超薄膜最高的T_c值;对于厚度为10 nm的MgB₂膜,T_c(0)=35.5 K,ρ_(42K)=17.7 μΩcm,上临界磁场μ₀H_c2估算为12 T左右,零磁场、4 K时的临界电流密度J_c=1.0×10⁷ A/cm²,是迄今为止10 nm厚MgB₂超薄膜的最高J_c值,且其表面连接性良好,均方根粗糙度为0.731 nm.这预示MgB₂超薄膜在超导纳米器件上具有广阔的应用前景. 关键词： 2超薄膜')" href="#">MgB₂超薄膜 薄膜生长 氢气流量 混合物理化学气相沉积     

Preparation of thin Si:H films in an inductively coupled plasma reactor and analysis of their surface roughness

An important concern in the deposition of Si:H films is to obtain smooth surfaces. Herein, we deposit the thin Si:H films using Ar-diluted SiH₄ as feedstock gas in an inductively coupled plasma reactor. And we carry a real-time monitor on the deposition process by using optical emission spectrum technology in the vicinity of substrate and diagnose the Ar plasma radial distribution by Langmuir probe. Surface detecting by AFM and surface profilometry in large scale shows that the thin Si:H films have small surface roughness. Distributions of both the ion density and the electron temperature are homogeneous at h = 0.5 cm. Based on these experimental results, it can be proposed inductively coupled plasma reactor is fit to deposit the thin film in large scale. Also, Ar can affect the reaction process and improve the thin Si:H films characteristics.     

Formation of Heusler alloy Co2FeSi thin films on the surface of single-crystal silicon

The initial stages of Heusler alloy (Co₂FeSi) thin film growth by reactive epitaxy on the Si(100)2 × 1 surface are studied, and formation conditions for this alloy are found. At a substrate temperature of lower than, or equal to, 180°C, an island film of ternary Co-Fe-Si film grows on the surface. The silicon content in this film is lower than in the compound to be synthesized. The film becomes continuous when its thickness exceeds 1.2 nm. It is shown that post-growth annealing at 240°C can raise the silicon content in the film and be conducive to obtaining Heusler alloy of a desired composition. In situ measurements of the films show that ferromagnetic ordering in them has a threshold and shows up at the coalescence growth stage of the Co-Fe-Si island alloy.     

Effect of the substrate temperature and deposition rate on the initial growth of thin lithium niobate-tantalate films deposited from a thermal plasma

Thin lithium niobate-tantalate (LiNb_0.5Ta_0.5O₃) films are studied at the initial stage of deposition from a thermal plasma. The effect of two deposition parameters (the substrate temperature and the deposition rate) on the film morphology, the film crystallinity, and the density of nuclei growing on a (0001) sapphire substrate are investigated. It is shown that the crystalline structure and roughness of a film are determined, for the most part, in the initial growth stage and therefore depend directly on both parameters. At the optimum temperatures and growth rates for obtaining good characteristics of (0006) texture, crystallinity, and surface roughness of the films, the film nuclei on the substrate have a high density and good epitaxial orientation to it. If the growth conditions are not optimum, the islands are either amorphous or have a low density on the substrate surface. The nucleation activation energy is observed to decrease as the deposition rate increases, which supports the assumption that the species that are active in film deposition are “hot” clusters forming in an oxygen-argon plasma in the immediate vicinity of the substrate.     

Growth of Cu Films on Si(111)-7×7 Surfaces at Low Temperature: A Scanning Tunnelling Microscopy Study

Morphologies of Cu(111) films on Si(111)-7×7 surfaces prepared at lowtemperature are investigated by scanning tunnelling microscopy (STM) andreflection high-energy electron diffraction (RHEED). At the initial growth stage, Cu films are flat due to the formation of silicide at the interface that decreases the mismatch between Cu films and the Si substrate. Different from the usual multilayer growth of Cu/Cu(111), on the silicide layer a layer-by-layer growth is observed. The two dimensional (2D) growth is explained by the enhanced high island density at low deposition temperature. Increasing deposition rateproduces films with different morphologies, which is the result of Ostwald ripening.     

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

To grow epitaxial Si films with atomic- and electronic-level perfection, a high-temperature chemical vapor deposition (CVD) process (>1000 °C) has been generally employed. To reduce the growth temperature below 600?°C but keeping a high deposition rate, other energy sources than thermal heating are required. Atmospheric pressure plasma CVD (AP-PCVD) is considered to be suitable for fabricating high-quality films at high deposition rates due both to the high radical density and to the low ion bombardment against the film surface, because the collision frequency among ions and neutral atoms is high. The present study focuses on the low-temperature growth of epitaxial Si, and experimentally demonstrates that AP-PCVD is capable of growing epitaxial Si films with high perfection applicable for semiconductor devices. It is found that the pre-growth cleaning of the Si surface by H(2) AP plasma is effective to grow high-purity Si films, and that the exposure of a film-growing surface to AP plasma during growth is important to form particle-free and defect-free Si films. From the experimental results and the first-principles molecular dynamics simulations of surface atomic reactions, it can be mentioned that both H atoms in the AP plasma and high-density He atoms having thermal kinetic energy contribute to the reduction of growth temperature by supplying considerable energy to the surface.     

Growth of atomically flat ultra-thin Ag films on Si surfaces

A two-step growth with deposition at low temperature and subsequent slow annealing to room temperature (RT) has been widely used to obtain atomically flat metal thin films on semiconductor substrates. In the case of Ag films, almost atomically flat films were obtained at a thickness of six monolayers (ML) on Si and GaAs. The flatness then gradually degraded with an increase in thickness. The existence of the critical thickness has been well explained by the “electronic growth theory”, which considers thickness-dependent change of vertically quantized electrons and their spilling out at the interfaces. However, several questions remain unanswered. How does the electronically grown Ag flat film accommodate the large misfit energy between the film and substrate? Up to what deposition temperature is the two-step growth effective to obtain atomically flat films? In this article, we review previous studies on the electronic growth of Ag films on Si(1 1 1) substrates, paying special attention to these two points. In addition, we also discuss the possibility of engineering electronic growth for artificial control of the critical thickness.     

Anomalous scaling in surface roughness evaluation of electrodeposited nanocrystalline Pt thin films

Atomic force microscopy (AFM) is used to measure the surface roughness of crystalline Pt thin films as a function of film thickness and growth rate. Our films were electrodeposited on Au/Cr/glass substrates, under galvanostatic control (constant current density), from a single electrolyte containing Pt⁴⁺ ions. Crystalline structure of the films was confirmed by X-ray diffraction (XRD) technique. The effect of growth rate (deposition current density) and film thickness (deposition time) on the kinetic roughening of the films were studied using AFM and roughness calculation. The data is consistent with a rather complex behaviour known as “anomalous scaling” where both local and large scale roughnesses show power law dependence on the film thickness.     

强磁场对真空蒸镀制取Te薄膜的影响

采用强磁场下物理气相沉积方法,在单晶硅、玻璃板和聚乙烯（PET）基片上真空蒸发制取Te膜.结果显示在三种不同的基片上生长Te膜时,4 T强磁场能够加快Te膜的形核长大,增大Te膜的颗粒尺度,使晶粒〈011〉方向取向性增强. 关键词： 真空蒸镀 强磁场 晶面取向 Te薄膜     

Structural and phase transformations during initial stages of copper condensation on Si(001)

Auger-electron spectroscopy, electron-energy loss spectroscopy, low-energy electron diffraction, and atomic-force microscopy are employed to investigate the growth mechanism, composition, structural and phase states, and morphology of Cu films (0.1–1 nm thick) deposited on a Si(001)-2 × 1 surface at a lower temperature of Cu evaporation (900°C) and room temperature of a substrate. The Cu film phase is shown to start growing on the Si(001)⁻² × 1 surface after three Cu monolayers (MLs) are condensed. It has been revealed that atoms of Cu and Si(001) are mixed, a Cu₂Si film phase is formed, and, thereafter, Cu₃Si islands arise at a larger coating thickness. Annealing of the first Cu ML leads to reconstruction of the Si(001)-1 × 1-Cu surface layer, thereby modifying the film growth mechanism. As a consequence, the Cu₂Si film phase arises when the thickness reaches two to four MLs, and bulk Cu₃Si silicide islands begin growing at five to ten MLs. When islands continue to grow, their height and density reach, respectively, 1.5 nm and 2 × 10¹¹ cm⁻² and the island area is 70% of the substrate surface at a thickness of ten MLs.     

Ellipsometric in situ measurements during deposition of amorphous CuxSn100−x films

Amorphous metallic films are produced by quench condensation onto a 4K cold Si substrate under ultra high vacuum conditions. During evaporation the film growth is recorded in situ ellipsometrically. At the same time the mass of the film is measured with quartz microbalances. It is shown that the dielectric constants are dependent on film thickness. Different film models for evaluating the ellipsometric measurements are used and tested. The influence of porosity and interface roughness is taken into account. The dependence of mass density on thickness is mainly understood in terms of island growth. The dependence of the dielectric constant on concentration is discussed with respect to the Faber-Ziman theory.Dedicated to Prof. Dr. G. von Minnigerode on the occasion of his 60th birthday