InP基1×4多模干涉耦合器的设计与制作

在密集波分复用系统中,多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀工艺制作了1×乘4多模干涉型耦合器.利用自动对准波导耦合测试系统对所制作器件的插入损耗和出光平衡度进行测量.测试结果表明,该器件在1 550nm波长附近的40nm带宽范围内获得了约2.6dB的通带平坦度,在1 550nm通信波长处,器件的插入损耗低于10dB.

Design and Fabrication of a 1-by-4 Multimode Interference Couplers Based on InP

Multiple wavelength DFB laser array and multimode interference coupler integrated light source device has important application prospect in the dense wavelength division multiplexing system. A strongly guided InP/InGaAsP multimode interference coupler is designed and simulated by using 3D FD-BPM method in order to research the optical coupler used in the broadband available multiple wavelength integrated light source. Tapered input/output waveguides are used to reduce the insertion loss of the multimode interference coupler and to improve the uniformity of the output ports. Combined with the metal organic chemical vapor deposition (MOCVD) epitaxial growth apparatus and according to the simulation results, a 1-by-4 multimode interference coupler is fabricated by using reactive ion etching process. The insertion loss and the uniformity of the device is measured by automatic alignment waveguide coupling test system. The test result shows that the device has 40nm available bandwidth and 2.6dB pass band flatness around 1550nm.Furthermore, the insertion loss is no higher than 10dB at the designed wavelength 1550nm.