Enlarging lens design with f-Θ lens for real time laser lithography inspections

An enlarging lens, composed of a charge-coupled-device (CCD) lens and an f-Θ lens, has been designed for real time laser lithography visual inspection purposes. The object of this design is to enlarge the image of the working specimens in real time, which used to be done by an independent magnifying system after the lithography process. F-Θ lens has both roles in this design, being a laser lithography lens and a specimen imaging lens. A beam splitter has been inserted between the f-Θ lens and the CCD lens, which divides the UV laser beam and the visible beam to form a coaxial system. This design also reaches the image requirements in both wavelength bands, that the value of MTF is nearly diffraction-limit in UV wavelength and greater than 0.45 at 40 c/mm in visible wavelength.     

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback(LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio(SMSR) as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature(uncoated facet). A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.     

超大规模集成电路光学光刻技术的现状与展望

光学光刻是目前超大规模集成电路(VLSI)制备中主要的微米和亚微米的图形加工技术,这一技术将继续保持其主导地位成为90年代VLSI发展的关键。本文综述了近年来光学光刻工艺的发展,主要介绍了G线(436nm)、Ⅰ线(365nm)和准分子激光光刻的现状,并对实现高的光学光刻分辨率所必须解决的透镜设计、套准精度和像场面积等问题作了详细描述。最后展望了发展方向、     

超小型非硅基微机械可调光衰减器

研制了一种新型的超小型电磁驱动微机械可调光衰减器（VOA）.该器件采用电磁驱动器转动硅基微镜改变光路实现可调衰减，在结构上采用了全磁性回复，完全摆脱了通常的弹性回复造成的部件疲劳、零点偏移等器件重复性问题.驱动电压为0～5 V，工作范围0～40 dB，插入损耗小于0.8 dB，回波损耗小于－50 dB.器件重要部件采用微细电火花加工(EDM)技术制作，并应用FEA软件进行了结构优化,对衰减响应进行了详尽的理论分析.该VOA设计体积仅为25×10×7 mm3，可构成阵列应用于波分复用（WDM/DWDM）系统中各信道的动态信号平衡或网络保护.     

Atom lithography without laser cooling

Using direct-write atom lithography, Fe nanolines are deposited with a pitch of 186 nm, a full width at half maximum (FWHM) of 50 nm, and a height of up to 6 nm. These values are achieved by relying on geometrical collimation of the atomic beam, thus without using laser collimation techniques. This opens the way for applying direct-write atom lithography to a wide variety of elements.     

All polymer asymmetric Mach-Zehnder interferometer waveguide sensor by imprinting bonding and laser polishing

We present an all polymer asymmetric Mach–Zehnder interferometer(AMZI) waveguide sensor based on imprinting bonding and laser polishing method. The fabrication methods are compatible with high accuracy waveguide sensing structure. The rectangle waveguide structure of this sensor has three sensing surfaces contacting the test media, and its sensing accuracy can be increased 5 times compared with that of one surface sensing structure. An AMZI device structure is designed. The single mode condition, the length of the sensing arm, and the length deviation between the sensing arm and the reference arm are optimized. The length deviation is optimized to be 19.8 μm in a refractive index range between1.470 and 1.545. We fabricate the AMZI waveguide by lithography and wet etching method. The imprinting bonding and laser polishing method is proposed and investigated. The insertion loss is between-80.36 dB and-10.63 dB. The average and linear sensitivity are 768.1 d B/RIU and 548.95 dB/RIU, respectively. And the average and linear detection resolution of the sensor are 1.30×10~(-6) RIU(RIU: refractive index unit) and 1.82×10~(-5) RIU, respectively. This sensor has a fast and cost-effective fabrication process which can be used in the cases of requiring portability and disposability.     

宽带折反射式紫外光刻物镜的设计

本文设计了一种新系列的紫外或远紫外激光光刻物镜,它与国内外已有的紫外物镜相比,在365nm以下的光谱区,具有更宽的光谱工作带宽和较高的数值孔径.以宽带准分子激光或短弧汞氙灯做光源,无需另加色散补偿光学元件,可以进行同轴对准.     

Terahertz transmission characteristics of double wire-grid polarizer on low-loss polyethylene substrate

We fabricated a double metallic wire-grid polarizer consisting of micrometer-pitch Cu grating on both sides of low-loss polyethylene substrate by simple electroplating and lithography micro-processing techniques. The performance of transmission was measured using a terahertz (THz) time domain spectroscopy system. The mixed polarization effects of surface plasmon polaritons in an azimuthally rotated grating were investigated. The polarization dependence of both amplitude and phase shift on frequency was demonstrated in the wide range of 0.1?C3 THz, and the extinction ratio is over 22 dB.     

Shot-noise-limited operation of a monomode high-cavity-finesse semiconductor laser for microwave photonics applications

Shot-noise-limited laser operation over a wide spectral bandwidth is demonstrated by using a semiconductor active medium inserted into a high-Q external cavity. This approach ensures, with a compact design, a sufficiently long photon lifetime to reach the oscillation-relaxation-free class A regime. The laser relative intensity noise is limited to the shot-noise relative floor, -156 dB/Hz for a 1 mA detected photocurrent, over the 100 MHz to 18 GHz bandwidth. The optimization of the laser cavity is discussed, and convenient shot-noise-limited operation is shown to be a trade-off between the cavity length and laser mode filtering.     

Single-mode fused coupler for undersea optical transmission systems

A single mode 3 dB fused coupler, to be used as a redundant laser combiner in the submerged repeater of an undersea optical fibre transmission system, is described. The fabrication and package design of the component for this high reliability application is discussed, and the results of a wide range of environmental tests are given.     

均衡功率的超宽带可调谐掺铒光纤激光器

报道了一种功率均衡的超宽带可调谐掺铒光纤激光器.该激光器采用窄线宽可调谐FP滤波器、掺铒光纤、波分复用器和耦合器构成光纤环形腔激光器，并通过部分反馈光功率自动控制，对输出激光功率进行均衡.实现了87 nm带宽（1525~1612 nm）范围内，输出激光功率波动小于0.2 dB的均衡结果.输出激光3 dB线宽为0.26 nm，边模抑制比大于55 dB.     

光纤直接耦合微加工型可调光衰减器

设计研制了一种新型小体积, 低成本的光纤直接耦合微加工型可调光衰减器. 该器件采用电磁微线圈驱动柔性框架上的活动光纤微位移实现信号功率衰减变化, 驱动电压为0~8 V, 工作范围0~65 dB, 动态时间响应小于2.3 ms. 器件构造工艺主要使用了CNC高精度雕刻和激光点焊封装技术. 利用有限元单元法进行器件理论分析, 并报告了其测试性能.     

激光直写邻近效应的校正

邻近效应是限制光刻系统分辨力的一个重要因素,它也限制了激光直写在亚微米和亚半微米光刻中的应用。分析了激光直写邻近效应产生的原因,指出它和电子束直写及投影光刻的区别,提出了一种简便有效的邻近校正方法。实验表明,通过光学邻近校正（ＯＰＣ）,利用微米级激光直写系统,制作出了０．６μｍ的实用光刻线条     

一种新型投影曝光调焦方法

为研究大面积激光投影光刻的调焦,利用Zemax光学设计软件模拟离焦对光程差（OPD）和调制传递函数（MTF）的影响,分析二者对投影曝光图形质量的影响,给出系统最大的离焦量值。提出一种利用显微镜的调焦方法,分析此方法的调焦误差主要来自于显微镜景深,根据景深表达式和系统最大离焦量值,选择一款景深不大于系统最大离焦量的显微镜来构建调焦系统,并基于该调焦系统进行光刻实验。实验结果表明:利用该方法对投影成像光刻进行调焦,无论是否离焦,边缘视场与中心视场的MTF均有差异,分辨率也有差异,但这种差异不影响光刻图形的质量。     

Thermally Stabilized Fiber-Bragg-Grating Vibration Sensor Using Servo Motor Control

A fiber-Bragg-grating (FBG) vibration sensor, in which an FBG acts as an intensity-modulator for incident narrow spectrum light such as a laser, is thermally stabilized. Sensitivity of the sensor is kept constant over a wide range of temperature by feeding back a fraction of the output signal into the laser source in such a way that by shifting the oscillation wavelength of the laser the dc component of the detected photocurrent remains unchanged regardless of change in the environmental temperature. Variation in the sensor sensitivity is reduced to as small as 3 dB after the stabilization, although it is more than 55 dB without the stabilization.     

Widely wavelength switchable V-coupled-cavity semiconductor laser with ∼40 dB side-mode suppression ratio

We report the first experimental demonstration of a single-electrode-controlled digitally wavelength switchable V-coupled-cavity laser with high side-mode-suppression-ratio (SMSR) in the 40?dB range. Sixteen-channel and twenty-six channel wavelength switchable lasers with 100?GHz spacing are demonstrated with the maximal SMSR of 40?dB and 37?dB, respectively. They do not require complex gratings, multiple epitaxial growths, or complex tuning algorithms. The device size is only 500?μm×300?μm. Such a simple, compact, and high-performance laser has great potential as a low-cost alternative to existing complex tunable lasers for wide deployment in optical networks and beyond.     

激光光刻中焦深概念的新探讨

焦深大小将直接影响激光光刻加工的最细线宽和线条的边缘倾角从而影响被加工器件性能.传统的几何光学焦深概念对有光刻胶存在时的激光光刻已不适用.本文导出了会聚的高斯光束用于激光光刻时在光刻胶内的光场近似分布形式,由此可判断出光刻胶对光刻线条的分辨率和焦深的影响,从而提出激光光刻时焦深的新概念和估算.     

Diffractive phase element for shrinking focal spot diameter: Design, fabrication, and application to laser beam lithography

A diffractive phase element (DPE) capable of shrinking the main-lobe of the focal spot of an incident beam has been developed. The DPE is expected to be used in laser beam lithography to improve the resolution. Special constraints, which force the focal spot to be small while permitting increase of the side-lobes, are introduced in the design of the DPE using an iterative method based on the Gerchberg-Saxton algorithm. Two kinds of DPEs are fabricated by a laser beam lithography system of our own composition and their performances are experimentally measured. The minimum line width obtained by the system is improved from 1.2 μm to 1.0 μm with the fabricated DPE. Focal depth of the focusing system is discussed.     

波长可调谐超短光脉冲的简便高质的生成技术

提出了一种以处于增益开关调制状态下的法布里珀罗(Fabry-Pérot)半导体激光器作为光源,采用简单的自激注入锁定方式,以生成波长可调谐的超短光脉冲的实验系统。该实验装置中,激光器的外腔包括两个串联在一起的布拉格光纤光栅,一个掺铒光纤放大器(EDFA),一个光耦合器和两个环行器,其作用是选模,以及增强并控制反馈回激光器内腔的光强。该实验系统简单而高效,在24nm的波长调谐范围内获得了边模抑制比高于40dB的单模光脉冲输出;而在1521.8nm和1550.0nm之间28.2nm的波长调谐范围内,边模抑制比高于35dB。所得到的各个单波长激光脉冲的时域半峰全宽为140~260ps,各个脉冲的光谱半峰全宽皆为0.1nm。     

1.3 μm planar buried heterostructure distributed feedback lasers grown by four-step MOVPE

Data are presented on InGaAsP/InP planar buried heterostructure (PBH) distributed feedback (DFB) lasers operating at 1.3 m. A four-step MOVPE process and holographic lithography are employed to fabricate these lasers. The CW laser threshold and the slope efficiency from these lasers are 9 mA and 0.23 mW mA^-1 per facet at room temperature. Single-longitudinal-mode operation with side-mode suppression of more than 35 dB is obtained at 5 mW.