1.55-μm大功率高速直调半导体激光器阵列

提出一种基于AlGaInAs材料的1.55-μm波段的大功率、高速直调分布反馈(DFB)激光器阵列。采用具有良好温度特性和高微分增益的AlGaInAs材料作为量子阱和波导层以实现大功率与高带宽的输出;引入稀释波导结构来减小有源区内部损耗,同时降低远场发散角;采用悬浮光栅并优化耦合系数以实现大注入电流下的单模稳定工作。最终实现了1.5-μm波段5波长的大功率直调激光器阵列,阵列波长间隔约为5 nm,室温连续波(CW)工作时各通道输出光功率均大于100 mW,单通道最大输出光功率为160 mW,500 mA工作电流范围内边模抑制比大于55 dB,小信号调制带宽可达7 GHz,激光器最小线宽为520 kHz,相对强度噪声低于-145 dB/Hz。     

边坡变形的分布式光纤监测模拟试验研究

布里渊散射光时域反射测量技术(BOTDR)作为一项新型光电传感监测技术,因其具有良好的抗干扰、长距离、可植入性和分布式监测的特点而被广泛应用于结构工程健康监测中。而直接将光纤布设在土体中则存在变形协调性差、易折断及空间定位难等问题。本次研究通过室内小比例尺模型试验,分别将光纤植入土工布和土工格栅等柔性复合材料中并一起铺设在边坡模型不同深度处,利用BOTDR监测边坡在外荷作用下的变形特征。试验结果表明,布设在土工格栅中的光纤稳定性最好； 土工布中的光纤变形协调性和敏感性优于土工格栅； 通过合理布置光纤能够对异常应变进行较为准确的识别和定位。试验初步验证了该方法应用于土质边坡变形监测的可行性。     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser.The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW,and static extinction ratio of-7 dB at the applied bias voltage from 0.5 to -2.0 V.     

Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector （SG-DBR） laser with a quantum-well electroabsorption modulator （QW-EAM） by combining ultra-low-pressure （55 mbar） selectivearea-growth （SAG） metal-organic chemical vapour deposition （MOCVD） and quantum-well intermixing （QWI） for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the Q WI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of-5 V.     

BOTDR分布式检测技术在复杂地层钻孔灌注桩测试中的应用研究

分析了Kagome格栅的等效刚度和屈服面. 其屈服面奇异，由4段直线围成. 利用该屈服面， 估算了Kagome具有I型、II型半无限大裂纹的裂尖塑性区，有限元计算验证了解析预测的 准确性. 与奇异屈服面相比，由Mises光滑屈服面给出的塑性区误差较大. 因此只有弹性情 况，可以将Kagome等效为各向同性；若材料塑性，或应力场奇异性较强，Kagome的强度依 赖于主应力方向，不能用各向同性模型来描述.     

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.     

微小型惯性仪表发展现状、趋势以及对行业的影响

惯性仪表（包括陀螺和加速度计）是惯性技术的基础和核心,近年来,以高精度硅微机电陀螺、集成化微光纤陀螺、速率积分半球谐振陀螺、谐振式加速度计为代表的新型惯性仪表技术发展迅猛,相比传统惯性仪表,能够兼顾高精度和低SWa P+C(Size Weight and Power, plus Cost,体积、重量、功耗和成本)指标,正推动惯性技术产生新变革。重点结合上述四种微小型惯性仪表,论述其国外最新进展,展望发展趋势,预测其对行业的影响,旨在为国内相关技术研究提供参考。     

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

In the last two decades, m-v compound semi- conductor materials grown on elemental semiconduc- tor substrates have attracted much attention due to their potential applications in high-efficiency so- lar cells, photodetectors, quantum-dot （QD） lasers, and metal-oxide-semiconductor field-effect transistors （MOSFETs）. Due to their extremely high electron mobility, III-V semiconductors such as GaAs, InGaAs and InAs are believed to be chan- nel materials for future complementary metal-oxide- semiconductor （CMOS） technology.CMOS tran- sistors on Ge substrates with high mobility In- GaAs/Ge channels have already been fabricated by using a wafer bonding technique, which is a promis- ing step for such a device on Si.     

渐变掩蔽图形超低压选择区域生长法制备高质量InGaAsP多量子阱材料

采用超低压(22 mbar)选择区域生长(Selective Area Growth, SAG)金属有机化学汽相沉积(Metal-organic Chemical Vapor Deposition, MOCVD)技术成功制备了高质量InGaAsP/InGaAsP多量子阱(Multiple Quantum Well, MQW)材料. 在较小的掩蔽宽度变化范围内(15—30μm)，得到了46nm的光荧光(Photoluminescence, PL)波长偏移量，PL半高宽(Full-Width-at-Half- 关键词： 超低压 选择区域生长 渐变掩蔽图形