| 激光干涉光刻法制作100 nm掩模 |
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| 引用本文： | 陈欣,赵青,方亮,王长涛,罗先刚.激光干涉光刻法制作100 nm掩模[J].强激光与粒子束,2011,23(3). |
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| 作者姓名： | 陈欣 赵青 方亮 王长涛 罗先刚 |
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| 作者单位： | 1. 电子科技大学 物理电子学院， 成都 610054; 2. 中国科学院 光电技术研究所, 微细加工光学国家重点实验室， 成都 610209 |
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| 基金项目： | 微细加工光学国家重点实验室基金，国家自然科学基金项目，四川省科技支撑计划项目 |
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| 摘 要： | 介绍了一种利用激光干涉光刻技术得到特征图形，并通过离子束刻蚀将图形转移到铬层上，从而获得掩模的方法。针对掩模透光率以及对干涉图形对比度可能产生影响的两个参数分别进行了数值仿真，从而证明此方法的可行性和参数的优化选择。自搭干涉光刻实验系统，用257 nm的激光光源实现光刻，得到特征尺寸为100 nm的图形，再经过离子束刻蚀，最终得到周期200 nm、线宽100 nm的掩模。
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| 关 键 词： | 激光干涉光刻 离子束刻蚀 纳米光刻 微纳结构制造 |
| 收稿时间： | 1900-01-01; |
Fabrication of 100 nm mask by laser interference lithography |
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| Chen Xin,Zhao Qing,Fang Liang,Wang Changtao,Luo Xiangang.Fabrication of 100 nm mask by laser interference lithography[J].High Power Laser and Particle Beams,2011,23(3). |
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| Authors: | Chen Xin Zhao Qing Fang Liang Wang Changtao Luo Xiangang |
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| Institution: | 1. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; 2. State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Chengdu 610209, China |
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| Abstract: | This paper presents a mask fabrication method, which uses laser interference lithography to prepare interference patterns, and then transfers the patterns to the chromium layer by ion beam etching (IBE) to gain the mask. A series of rigorous numerical simulations have been done on the light transmission rate of the mask and two parameters that may affect the contrast of interference patterns for parameter optimization. An interference lithography system was constructed with 257 nm laser light source, and patterns with feature size of 100 nm were developed. Then masks with period of 200 nm and line width of 100 nm were obtained by IBE. |
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| Keywords: | ion beam etching nanolithography nanostructure fabrication |
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