CdTe量子点的室温激子自旋弛豫动力学

利用交叉偏振三阶非线性瞬态光栅技术,研究了室温下CdTe胶体量子点激子自旋弛豫动力学的尺寸效应.在抽运-探测光子能量与CdTe量子点的最低激子吸收(1Se—1Sh)跃迁相共振时,量子点激子自旋弛豫显示了时间常数为0.1—0.5 ps的单指数衰减行为.CdTe量子点激子自旋的快速弛豫源于亮暗激子精细结构态跃迁,即J=±1←→■2跃迁.激子自旋弛豫主要由空穴的自旋翻转过程决定.研究结果表明:CdTe量子点激子自旋弛豫速率与量子点尺寸的4次方成反比.     

本征GaAs中电子自旋极化对电子复合动力学的影响研究

采用时间分辨圆偏振光和线偏振光抽运-探测光谱,研究了9.6 K温度下本征GaAs中自旋极化电子与非极化电子的复合动力学及其随光子能量演化.发现自旋极化对电子复合动力学具有显著影响.仅在导带底附近测量时,两种方法测试到的复合寿命一致,而在高过超能量电子态测量时,两种方法测试到的复合寿命不一致.指出时间分辨法拉第光谱中,用于反演求解电子自旋相干寿命的电子复合寿命应该使用圆偏振光抽运-探测获得的复合寿命,而不是线偏振光抽运-探测获得的寿命.理论计算与实验结果吻合较好. 关键词： 圆偏振光抽运-探测光谱 自旋量子拍 自旋极化 GaAs     

本征GaAs中电子自旋极化的能量演化研究

采用时间分辨圆偏振光抽运-探测光谱,研究9.6 K温度下本征GaAs中电子自旋相干弛豫动力学,发现反映电子自旋相干的吸收量子拍的振幅随光子能量的增加呈非单调性变化.考虑自旋极化依赖的带填充效应和带隙重整化效应,发展了圆偏振光抽运-探测光谱的理论模型.该模型表明量子拍的振幅依赖于所探测能级的电子初始自旋极化度,自旋探测灵敏度以及带填充因子,三者的乘积导致了量子拍振幅的非单调变化,与实验结果一致.给出了能级分裂的二能级系统中电子自旋极化度定义.发现在高能级上可以获得100%的初始电子自旋极化度. 关键词： 圆偏振光抽运-探测光谱 吸收量子拍 电子自旋极化度 GaAs     

本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究

发展了一种时-空分辨圆偏振光抽运-探测光谱及其理论,并用于本征GaAs量子阱中电子自旋扩散输运的实验研究.获得室温下本征GaAs量子阱中的“自旋双极扩散系数”为D_as=37.5±15 cm²/s.此结果比用自旋光栅法测量到的掺杂GaAs量子阱中电子自旋扩散系数小.解释为是由于“空穴库仑拖曳”效应减慢了电子自旋波包的扩散输运. 关键词： 时-空分辨抽运-探测光谱 电子自旋扩散 GaAs量子阱     

有机聚合物薄膜激光诱导相位孔衍射的实验和理论

实验发现当一束较强的抽运激光(526nm)与一束较弱的探测激光(6328nm)相交通过非线性 介质薄膜(聚吡咯甲烯/聚乙烯醇薄膜)时,在探测光束的远场产生了中心为亮斑,近场中心 为暗斑的多个同心衍射环.从菲涅耳-基尔霍夫衍射积分公式出发,理论分析了产生这种现象 的原因是抽运光在非线性介质中诱导的相位孔对探测光的衍射效应.通过数值积分,计算结 果与实验结果符合. 关键词： 聚合物非线性光学薄膜 抽运-探测 激光诱导衍射     

飞秒光诱导铽镓石榴石晶体中的磁化响应研究

运用时间分辨抽运-探测光谱技术,研究了磁光晶体铽镓石榴石(TGG)在不同椭圆偏振态的飞秒激光脉冲诱导下的极化和磁化响应.研究表明,当仅存在逆法拉第效应时,探测光旋转角信号和椭圆率信号的变化方向与圆偏振抽运光的旋向相关.这是由于圆偏振光在TGG晶体中产生的瞬态有效磁场的方向依赖于圆偏振光的旋向所致.光诱导磁化过程与材料的性质有关,TGG晶体的顺磁特性决定了其自旋弛豫时间为几十飞秒.由于探测光旋转角信号和椭圆率信号的半高全宽均为500 fs左右,加之信号强度随着抽运光脉冲能量密度的增加呈线性增长,表明TGG晶 关键词： 铽镓石榴石晶体 抽运-探测光谱技术 逆法拉第效应     

自旋极化度对GaAs量子阱中吸收饱和效应与载流子复合动力学的影响研究

本文研究了(001) GaAs量子阱薄膜中重空穴激子近共振抽运-探测的载流子自旋弛豫动力学, 发现载流子的自旋极化对传统的线偏振光吸收饱和效应和载流子复合动力学都有影响. 进一步的抽运流依赖的自旋弛豫和复合动力学研究表明, 自旋极化对线偏振光的吸收饱和效应的影响随抽运流降低而变弱. 在低激发流时, 自旋极化对线偏振吸收饱和效应的影响才可忽略. 然而, 又显现出自旋极化对复合动力学的影响. 分析表明复合动力学的自旋极化依赖性起源于重空穴激子形成浓度的自旋极化依赖性. 复合动力学的自旋极化依赖性表明自旋弛豫时间计算中所涉及的复合时间应该使用自旋极化载流子的复合时间. 基于二维质量作用定律的激子浓度计算表明, 库仑屏蔽效应对激子形成的影响在较低激发载流子浓度下可以忽略.     

长寿命吸收过程对超快动力学过程测量的影响

使用飞秒时间分辨抽运-探测透射光谱技术,实验研究了GaAs体材料中光激发载流子的超快弛豫动力学的波长依赖.在相同的光激发载流子浓度和抽运/探测比时,发现760 nm和780 nm两中心波长处的瞬态透射变化延迟扫描信号出现负的和振荡的信号.与模拟计算结果对比,判定该实验瞬态信号是错误的.分析探测器输出波形,发现是由于反相波形导致的,而引起反相波形的原因在于样品中存在长寿命的吸收过程.指出通过提高探测器上的抽运/探测比能够矫正反相波形,从而获得正确的瞬态透射变化动力学.提高探测器上的抽运/探测比与目前的应尽量减小抽运光对探测器的散射贡献的观点是对立的.文章的研究结果对应用抽运-探测时间分辨光谱技术正确地测量超快瞬态动力学过程具有重要的参考价值. 关键词： 时间分辨抽运-探测透射光谱 饱和吸收 吸收增强 GaAs体材料     

三光束飞秒激光干涉在GaP,ZnSe表面诱导二维复合纳米-微米周期结构

报道了三光束飞秒激光干涉在GaP和ZnSe晶体表面诱导二维复合纳米-微米周期结构.改变三束光的偏振组合方式,可以得到不同的纳米-微米复合结构.理论计算了相应偏振条件下光场强度分布、椭偏度分布和偏振方向分布.实验和理论计算结果表明,烧蚀斑上的微米长周期结构是由三光束干涉的强度花样决定,短周期纳米结构是由光场的偏振干涉花样决定.这些研究在纳米材料制备、超高密度光存储以及材料特性周期性调制等方面有很大的应用前景.     

锶原子光晶格钟自旋极化谱线的探测

87Sr原子存在核自旋,在磁场作用下原子能级会分裂成不同塞曼子能级.通过光抽运对原子进行自旋极化,其自旋极化谱线的探测为锶光钟系统的闭环锁定提供精确的频率参考.本文对~(87)Sr原子钟跃迁能级5s~2~1S_0→5s5p~3P_0中的m_F=+9/2和m_F=-9/2的塞曼磁子能级自旋极化谱线进行了探测.经过一级宽带冷却和二级窄线宽冷却与俘获后,锶冷原子温度为3.9μK,原子数目为3.5×10~6.利用邻近"魔术波长"的813.426 nm半导体激光光源实现水平方向的一维光晶格装载.采用归一化探测方法用线宽为Hz量级的698 nm钟激光对~1S_0→~3P_0偶极禁戒跃迁进行探测,在150 ms的探测时间下获得线宽为6.7 Hz的钟跃迁简并谱.在磁光阱竖直方向施加一个300 mGs的偏置磁场获得塞曼分裂谱,并通过689 nm的圆偏振自旋极化光进行光抽运,最终在探测时间为150 ms时,获得左右旋极化谱线线宽分别为6.2 Hz和6.8 Hz.     

Depolarization of the photoluminescence and spin relaxation in n-doped GaAs

Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarization of the photoluminescence (PL) in a transverse magnetic field (Hanle effect). In order to measure the PL polarization, a time-resolved pump-probe experiment, where a pump pulse generates spin-polarized electrons and a probe pulse monitors their polarization, was employed. The PL polarization in dependences of the pump-probe delay, external magnetic field as well as of the sample temperature was studied. The PL polarization was found to decay exponentially with the pump-probe delay, from which the spin lifetime of the electrons was measured. The measured value was found to depend on the strength of the magnetic field and sample temperature.     

Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer

Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron-hole interactions caused by non-geminate or geminate capture of photo-generated electron-hole pairs in the two excitation cases, and provide a direct verification of the electron-hole spatial correlation effect on electron spin relaxation.     

Coherent spin dynamics of electrons and excitons in nanostructures (a review)

The studies of spin phenomena in semiconductor low-dimensional systems have grown into the rapidly developing area of the condensed matter physics: spintronics. The most urgent problems in this area, both fundamental and applied, are the creation of charge carrier spin polarization and its detection, as well as electron spin control by nonmagnetic methods. Here, we present a review of recent achievements in the studies of spin dynamics of electrons, holes, and their complexes in the pump-probe method. The microscopic mechanisms of spin orientation of charge carriers and their complexes by short circularly polarized optical pulses and the formation processes of the spin signals of Faraday and Kerr rotation of the probe pulse polarization plane as well as induced ellipticity are discussed. A special attention is paid to the comparison of theoretical concepts with experimental data obtained on the n-type quantum well and quantum dot array samples.     

Optical spin injection and spin lifetime in Ge heterostructures

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin polarizations and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct gap photoluminescence exceeds the theoretical bulk limit, yielding ～37% and ～85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is estimated to be ～0.5 ps and it is governed by transitions between light and heavy hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5?ns below 150?K. Theoretical analysis of the spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime of electrons.     

InAs单层和亚单层结构中的自旋动力学研究

利用偏振时间分辨光谱和时间分辨Kerr旋转谱，研究了GaAs中的InAs单层和亚单层的电子自旋动力学.实验发现，在非共振激发条件下，厚度为1/3单层的InAs亚单层中电子自旋弛豫寿命长达3.4ns，而1个单层厚的InAs层的电子自旋寿命只有0.48ns；而在共振激发条件下，亚单层结构中的电子自旋寿命大大减少，只有70ps，单层InAs中电子自旋寿命没有显著变化.分析表明，低温下InAs单层和亚单层结构中，Bir-Aronov-Pikus(BAP)自旋弛豫机理占主导地位.通过改变材料结构特性和激发条件来改变电子空穴的空间相关性，从而达到控制自旋弛豫的目的. 关键词： InAs亚单层 自旋弛豫 BAP机理     

Coherent transfer of light polarization to electron spins in a semiconductor

We demonstrate that the superposition of light polarization states is coherently transferred to electron spins in a semiconductor quantum well. By using time-resolved Kerr rotation, we observe the initial phase of Larmor precession of electron spins whose coherence is transferred from light. To break the electron-hole spin entanglement, we utilized the big discrepancy between the transverse g factors of electrons and light-holes. The result encourages us to make a quantum media converter between flying photon qubits and stationary electron-spin qubits in semiconductors.     

Spin-polarized injection into a p-type GaAs layer from a Co2 MnAl injector

Electric luminescence and its circular polarization in a Co2 MnAl injector-based light emitting diode (LED) has been detected at the transition of e-A0 C , where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p + -GaAs layer. The large volume of the p + -GaAs layer can facilitate the detection of weak electric luminescence (EL) from e-A 0C emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p+ -GaAs layer, where the spin polarization of injected electrons is destroyed by a very effective electron-hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.     

InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究

采用飞秒时间分辨圆偏振光抽运-探测光谱对In_01Ga_09N薄膜的电子自旋注入和弛豫进行了研究.获得初始自旋偏振度约为02,此结果支持在圆偏振光激发下,重、轻空穴带的跃迁强度比为3∶1,而不支持1∶1或1∶094的观点同时获得自旋偏振弛豫时间为490±70ps,定性分析了自旋弛豫机理,认为BAP机理是电子自旋弛豫的主要机理. 关键词： 电子自旋 InGaN 自旋极化 自旋弛豫     

Full configuration interaction studies of phonon and photon transition rates in semiconductor quantum dots

Quantum chemical methods originally developed for studying atomic and molecular systems can be applied successfully to the study of few-body electron-hole systems in semiconductor nanostructures. A new computational approach is presented for studying the energetics and dynamics of interacting electrons and holes in a semiconductor quantum dot. The electron-hole system is described by a two-band effective mass Hamiltonian. The Hamiltonian is diagonalized in a configuration state function basis constructed as antisymmetric products of the electron one-particle functions and antisymmetric products of the hole one-particle functions. The symmetry adapted basis set used for the expansion of the one-particle functions consists of anisotropic Gaussian basis functions. The transition probability between electron-hole states consisting of different numbers of carrier pairs is calculated at the full configuration interaction level. The results show that the electron-hole correlation affects the radiative recombination rates significantly. A method for calculating the phonon relaxation rates between excited states and the ground state of quantum dots is described. The phonon relaxation calculations show that the relaxation rate is strongly dependent on the energy level spacings between the states.