Depolarization of the photoluminescence and spin relaxation in n-doped GaAs |
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Authors: | M Idrish Miah |
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Institution: | Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111, Australia Department of Physics, University of Chittagong, Chittagong 4331, Bangladesh |
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Abstract: | Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarization of the photoluminescence (PL) in a transverse magnetic field (Hanle effect). In order to measure the PL polarization, a time-resolved pump-probe experiment, where a pump pulse generates spin-polarized electrons and a probe pulse monitors their polarization, was employed. The PL polarization in dependences of the pump-probe delay, external magnetic field as well as of the sample temperature was studied. The PL polarization was found to decay exponentially with the pump-probe delay, from which the spin lifetime of the electrons was measured. The measured value was found to depend on the strength of the magnetic field and sample temperature. |
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Keywords: | Spin polarization Photoluminescence Spin relaxation |
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