| InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究 |
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| 引用本文： | 陈小雪,滕利华,刘晓东,黄绮雯,文锦辉,林位株,赖天树.InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究[J].物理学报,2008,57(6):3853-3856. |
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| 作者姓名： | 陈小雪 滕利华 刘晓东 黄绮雯 文锦辉 林位株 赖天树 |
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| 作者单位： | 中山大学光电材料与技术国家重点实验室，物理科学与工程技术学院，广州 510275 |
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| 基金项目： | 国家自然科学基金(批准号：60490295，60678009)和高等学校博士学科点专项科研基金(批准号：20050558030)资助的课题. |
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| 摘 要： | 采用飞秒时间分辨圆偏振光抽运-探测光谱对In01Ga09N薄膜的电子自旋注入和弛豫进行了研究.获得初始自旋偏振度约为02，此结果支持在圆偏振光激发下，重、轻空穴带的跃迁强度比为3∶1，而不支持1∶1或1∶094的观点同时获得自旋偏振弛豫时间为490±70ps，定性分析了自旋弛豫机理，认为BAP机理是电子自旋弛豫的主要机理.
关键词：
电子自旋
InGaN
自旋极化
自旋弛豫
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| 关 键 词： | 电子自旋 InGaN 自旋极化 自旋弛豫 |
| 收稿时间： | 2007-07-30 |
Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy |
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| Chen Xiao-Xue,Teng Li-Hua,Liu Xiao-Dong,Huang Qi-Wen,Wen Jin-Hui,Lin Wei-Zhu,Lai Tian-Shu.Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy[J].Acta Physica Sinica,2008,57(6):3853-3856. |
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| Authors: | Chen Xiao-Xue Teng Li-Hua Liu Xiao-Dong Huang Qi-Wen Wen Jin-Hui Lin Wei-Zhu Lai Tian-Shu |
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| Abstract: | The injection and relaxation of electron spins in In0.1Ga0.9N film were studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 02 was obtained, which agrees with 3∶1 ratio of heavy- to light-hole valence bands in transition strength, but not with the 1∶1 or 1∶0.94 ratios. A spin relaxation lifetime of 490±70ps was obtained at room temperature. The spin relaxation mechanism is discussed qualitatively, and is thought to be dominated by BAP mechanism here. |
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| Keywords: | electron spin InGaN spin polarization spin relaxation |
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