Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique

Self-heating in multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of AlGaN/GaN HEMT is estimated from the calibration curve of passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

AlGaN/GaN高电子迁移率器件外部边缘电容的物理模型

AlGaN/GaN HEMT外部边缘电容Cofd是由栅极垂直侧壁与二维电子气水平壁之间的电场构成的等效电容.本文基于保角映射法对Cofd进行物理建模,考虑沟道长度调制效应,研究外部偏置、阈值电压漂移和温度变化对Cofd的影响:随着漏源偏压从零开始增加,Cofd先保持不变再开始衰减,其衰减速率随栅源偏压的增加而减缓;AlGaN势垒层中施主杂质浓度的减小和Al组分的减小都可引起阈值电压的正向漂移,正向阈值漂移会加强沟道长度调制效应对Cofd的影响,导致Cofd呈线性衰减.在大漏极偏压工作情况下,Cofd对器件工作温度的变化更加敏感.     

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages(BVs)simultaneously in AlGaN/GaN high-electron mobility transistors(HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from-5 V to-49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.     

基于有限元方法的有机场效应晶体管特性模拟与实验验证

采用有限元方法,借助多物理场软件COMSOL模拟了底栅顶接触结构有机场效应晶体管电位和载流子浓度随源漏电压Vds的变化。模拟结果表明,当固定栅压V_g=-10 V时,改变V_(ds)从0~-10 V,对于电位分布,从栅极到源漏电极竖直方向有渐进的变化,而从源极到漏极的水平方向呈现由大到小明显的梯度变化。对于载流子浓度,观察到沟道处从源极向漏极逐渐减少,在靠近漏极的区域减少得尤为明显,而当源漏电压等于栅极电压时,产生夹断现象。进一步将模拟结果与实际制备的器件性能进行了对比,模拟结果与实验数据所显示的分布趋势大体相同,印证了模拟的合理性。由此表明,采用模拟方法分析有机场效应晶体管的器件特性,对于实际制备器件具有重要的指导意义。     

22 nm工艺超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应研究

利用计算机辅助设计技术数值仿真工具, 研究22 nm工艺技术节点下超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应, 系统地分析了掺杂地平面技术、重离子入射位置、栅功函数和衬底偏置电压对于单粒子瞬态效应的影响. 模拟结果表明, 掺杂地平面和量子效应对于单粒子瞬态效应影响很小, 重离子入射产生大量电荷, 屏蔽了初始电荷分布的差异性. 单粒子瞬态效应以及收集电荷和重离子入射位置强相关, 超薄体全耗尽绝缘体上硅最敏感的区域靠近漏端. 当栅功函数从4.3 eV变化到4.65 eV时, 单粒子瞬态电流峰值从564 μA减小到509 μA, 收集电荷从4.57 fC减小到3.97 fC. 超薄体全耗尽绝缘体上硅器件单粒子瞬态电流峰值被衬底偏置电压强烈调制, 但是收集电荷却与衬底偏置电压弱相关. 关键词： 超薄体全耗尽绝缘体上硅 单粒子瞬态效应 电荷收集 数值仿真     

Temperature dependence of single event transient in 90-nm CMOS dual-well and triple-well NMOSFETs

This paper investigates the temperature dependence of single event transient (SET) in 90-nm complementary metat-oxide semiconductor (CMOS) dual-well and triple-well negative metal-oxide semiconductor field-effect transistors (NMOSFETs). Technology computer-aided design (TCAD) three-dimensional (3D) simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from -55℃ to 125℃, which is closely correlated with the source of NMOSFETs. This reveals that the pulse width increases with temperature in dual-well due to the weakening of anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.     

Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced.     

A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal--Oxide--Semiconductor Field Effect Transistor

A novel fully depleted air A1N silicon-on-insulator （SOD metai-oxide-semiconductor field effect transistor （MOS- FET） is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4 K higher than the atmosphere temperature resulting in less severe self-heating effect in air A1N SOI MOSFETs and A1N SOI MOSFETs. The on-state current of air A1N SOI MOSFETs is similar to the A1N SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of A1N SOI is 6. 7 times of normal SOI MOSFETs, while the counterpart of air A1N SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air A1N SOl MOSFETs with different drain voltage is much less than that of A1N SOI devices, when the drain voltage is Mased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.     

Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

Metal-semiconductor-metal ultraviolet photodetector based on GaN

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 Na under 5 V bias, and is 15.3 Na under 10 V bias. A maximum responsivity of 0.166 A/W has been achieved under the illumination with λ= 366 nm light and 15 V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. Its responsivity under the illumination with λ= 360 nm light increases when the bias voltage increases.     

Performance of MPPC at low temperature

The performance of a MultiPixel Photon Counter (MPPC) from room to liquid nitrogen temperatures were studied. The gain, the noise rate and bias voltage of the MPPC as a function of temperature were obtained. The experimental results show that the MPPC can work at low temperatures. At nearly liquid nitrogen temperatures, the gain of the MPPC drops obviously to 35% and the bias voltage drops about 9 V compared with that at room temperature. The thermal noise rate from 10⁶ Hz/mm at room temperature drops abruptly to 0 Hz/mm at -100 ℃. The optimized operation point can be acquired by the experiment.     

65 nm互补金属氧化物半导体场效应和晶体管总剂量效应及损伤机制

对65 nm互补金属氧化物半导体工艺下不同尺寸的N型和P型金属氧化物半导体场效应晶体管(NMOSFET和PMOSFET)开展了不同偏置条件下电离总剂量辐照实验.结果表明:PMOSFET的电离辐射响应与器件结构和偏置条件均有很强的依赖性,而NMOSFET表现出较强的抗总剂量性能;在累积相同总剂量时,PMOSFET的辐照损伤远大于NMOSFET.结合理论分析和数值模拟给出了PMOSFET的辐射敏感位置及辐射损伤的物理机制.     

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利用在线椭偏仪对非晶碳氢膜进行了光学常数、沉积率和刻蚀率的测量。在无直流负偏压或偏压较小时,薄膜呈现聚合物结构,折射率和消光系数较小;当增加直流负偏压时,薄膜的折射率和消光系数显著提高,所成膜为硬质非晶碳氢膜。在以CH4作为气源进行沉积时,随着偏压的增加,沉积率先升高再降低,在偏压为-100V时,沉积率为最大。H2/N2(30%N2)的混合气体的刻蚀率要比单独用H2作为刻蚀气体的刻蚀率要大。对于CH4/N2(30%N2),在偏压从0V增加到300V过程中,在大约50V时,基底上的薄膜有一个从沉积到刻蚀的转化过程。     

具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管

介绍了一种具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管。采用原子层淀积(ALD)方法实现Al₂O₃栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的栅长(L_g)为2 μm,栅宽(W_g)为0.9 mm(0.45 mm×2),栅极和源极(L_gs)之间的距离为5 μm,栅极和漏极(L_gd)之间的距离为10 μm。在栅压为－20 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电仅为0.65 nA。在栅压为+12 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电为225 nA。器件的栅压摆幅为－20~+12 V。在栅压V_gs=+10 V时,槽栅常关型AlGaN/GaN MOS-HEMT电流和饱和电流密度分别达到了98 mA和108 mA/mm (W_g=0.9 mm), 特征导通电阻为4 mΩ·cm²。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.6 V,开启与关断电流比达到了5×10⁸。当V_ds=7 V时,器件的峰值跨导为42 mS/mm (W_g=0.9 mm,V_gs=+10 V)。在V_gs=0 V时,栅漏间距为10 μm的槽栅常关型AlGaN/GaN MOS-HEMT的关断击穿电压为450 V,关断泄露电流为0.025 mA/mm。     

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

In this paper,high temperature direct current(DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V(far from Dirac point),the drainsource current decreases obviously with increasing temperature,but it has little change at a gate bias of +8 V(near Dirac point).The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies.Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures.The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience,demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.     

γ射线总剂量辐照对单轴应变Si纳米n型金属氧化物半导体场效应晶体管栅隧穿电流的影响

基于γ射线辐照条件下单轴应变Si纳米n型金属氧化物半导体场效应晶体管(NMOSFET)载流子的微观输运机制,揭示了单轴应变Si纳米NMOSFET器件电学特性随总剂量辐照的变化规律,同时基于量子机制建立了小尺寸单轴应变Si NMOSFET在γ射线辐照条件下的栅隧穿电流模型,应用Matlab对该模型进行了数值模拟仿真,探究了总剂量、器件几何结构参数、材料物理参数等对栅隧穿电流的影响.此外,通过实验进行对比,该模型仿真结果和总剂量辐照实验测试结果基本符合,从而验证了模型的可行性.本文所建模型为研究纳米级单轴应变Si NMOSFET应变集成器件可靠性及电路的应用提供了有价值的理论指导与实践基础.     

温度对液晶光阀电光特性的影响

采用DMS505显示器测量系统测量并分析了环境温度对TB3639型液晶光阀的电光特性的影响，结果表明：阈值电压，饱和电压和陡度因子均是温度的函数。温度从-25℃变化到70℃，阈值电压从2．015V降到1．631V；饱和电压从2．748V降到2．323V；陡度因子从1．364增大到1．424。为设计高稳定性的液晶显示器件提供了依据。     

脉冲激光器大电流窄脉冲驱动设计

介绍了利用金属氧化物场效应管产生大电流窄脉冲来驱动激光二极管的原理,推导出驱动金属氧化物场效应管峰值驱动电流的计算公式和开通时间的估算公式,通过仿真总结出影响驱动电源脉冲电流的脉宽、幅度和振荡的主要因素,理论和仿真结果表明,器件的寄生电感、电路走线电感和负载寄生电感对电流影响较大。实验结果显示,在供电高压为200 V时,金属氧化物场效应管开通时间为2 ns;激光二极管驱动电流上升时间小于10 ns,脉宽为15~100 ns,幅度为0~50 A连续可调,频率为0~50 kHz。     

Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

A non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor(quasi-EDHEMT) with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering(DIBL)was presented. Due to the metal organic chemical vapor deposition(MOCVD) grown 9-nm undoped AlGaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas(2DEG) was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1-μm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm.The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of-6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V.     

非简谐振动对石墨烯量子电容和热稳定性的影响

采用固体物理理论和方法,研究了单层石墨烯的量子电容和它的温度稳定性随温度和电压的变化规律,探讨原子非简谐振动对它的影响.结果表明:(1)当电压一定时,单层石墨烯的量子电容和温度稳定性系数均随温度升高发生非线性变化,电压小于2.3 V时,量子电容随温度升高而增大,温度稳定性系数随温度升高由缓慢变化到很快增大,电压高于2.3 V时,量子电容随温度升高先增大后减小,而其温度稳定性系数随温度升高由缓慢变化到很快减小.温度一定时,量子电容只在电压值为0.4～2.8 V范围内才变化较小,而电压值大于2.8 V时,量子电容迅速减小并趋于0;(2)与简谐近似相比,非简谐项会使石墨烯量子电容有所增大,且温度愈高,两者的差愈大,非简谐效应愈显著,温度为300 K时,非简谐的量子电容要比简谐近似的值大0.33%,而温度为1 000 K时,差值增大到1.47%;(3)电压在1.5～1.8 V之间,而温度低于800 K时,石墨烯量子电容的温度稳定性系数最小且不随温度而变,储能性能的温度稳定性最好;(4)非简谐项会使它的量子电容热稳定性系数比简谐近似的值增大,且增大的情况与温度有关,当温度为400 K时量子电容热...