基于垂直结构的有机光发射晶体管制备与性能研究

制备了一种有机垂直光发射晶体管, 兼具有机发光二极管的发光和晶体管的开关调节两个功能.其结构为一个有机发光单元垂直堆叠在一个电容单元上,两单元通过一个共有的源电极连在一起.当电容单元被充电时,积累在源电极的电荷能有效地调节源极与有机层之间的载流子注入势垒,从而达到控制源漏输出电流的大小,最终控制发光单元发光的强度.实验结果表明,器件可提供02 mA的输出电流,其大小可驱动发光单元发光,工作电压（开启电压）为6 V.这种垂直集成方案,实现了器件多功能化,为有机发光二极管有源矩阵驱动的实际应用提供了一种新的解决方法. 关键词： 有机光发射晶体管 垂直 电容     

Performance of Organic Field Effect Transistors with Self-Improved Cu/Organic Interfaces

We fabricate pentacene-based organic field effect transistors （OFETs） with Cu as source and drain （S-D） electrodes. The fabricated devices stored for ten hours under ambient atmospheric conditions exhibit superior performance compared with the as-prepared devices. The field-effect mobility increases from 0. 012 to 0.03 cm^2 V^-1 s^-1, and the threshold voltage downshifts from -14 to -9 V. The on/off current ratios are close to the order of 10^4. The improved performance of the stored devices is attributed to the formation of thin Cu oxide at the Cu electrodes/organic interfaces. These results suggest a simple and available way to optimize device properties and to reduce fabrication cost for OFETs.     

基于垂直结构的有机光发射晶体管制备与性能研究

制备了一种有机垂直光发射晶体管, 兼具有机发光二极管的发光和晶体管的开关调节两个功能.其结构为一个有机发光单元垂直堆叠在一个电容单元上,两单元通过一个共有的源电极连在一起.当电容单元被充电时,积累在源电极的电荷能有效地调节源极与有机层之间的载流子注入势垒,从而达到控制源漏输出电流的大小,最终控制发光单元发光的强度.实验结果表明,器件可提供02 mA的输出电流,其大小可驱动发光单元发光,工作电压（开启电压）为6 V.这种垂直集成方案,实现了器件多功能化,为有机发光二极管有源矩阵驱动的实际应用提供了一种新的解决方法.     

基于有限元方法的有机场效应晶体管特性模拟与实验验证

采用有限元方法,借助多物理场软件COMSOL模拟了底栅顶接触结构有机场效应晶体管电位和载流子浓度随源漏电压Vds的变化。模拟结果表明,当固定栅压V_g=-10 V时,改变V_(ds)从0~-10 V,对于电位分布,从栅极到源漏电极竖直方向有渐进的变化,而从源极到漏极的水平方向呈现由大到小明显的梯度变化。对于载流子浓度,观察到沟道处从源极向漏极逐渐减少,在靠近漏极的区域减少得尤为明显,而当源漏电压等于栅极电压时,产生夹断现象。进一步将模拟结果与实际制备的器件性能进行了对比,模拟结果与实验数据所显示的分布趋势大体相同,印证了模拟的合理性。由此表明,采用模拟方法分析有机场效应晶体管的器件特性,对于实际制备器件具有重要的指导意义。     

Fabrication and Characterization of C60-Based Organic Schottky Diodes

We have fabricated organic Schottky barrier diodes with Cu/LiF/C60/Al andwiched construction. Cu and Al are selected as the cathode and the anode, respectively. C60 is used as the organic layer and LiF as the buffer layer inserted between the cathode and C60. After the annealing process, Schottky contact is well formed at the Al/C60 interface and Ohmic contact is formed at the （Cu/LiF）/C60 interface. The current density-voltage （J-V） measurements of the diodes present nonlinear behavior. As a result, the rectification ratio reaches 1×03. The characteristics of the diodes have been analyzed using the energy band diagram. The values of Schottky barrier height ΦB, ideality factor n and reverse saturation current density Js are extracted according to the standard thermionic emission model.