| AlGaN/GaN高电子迁移率器件外部边缘电容的物理模型 |
| |
| 引用本文： | 刘乃漳,张雪冰,姚若河.AlGaN/GaN高电子迁移率器件外部边缘电容的物理模型[J].物理学报,2020(7):256-264. |
| |
| 作者姓名： | 刘乃漳 张雪冰 姚若河 |
| |
| 作者单位： | 华南理工大学电子与信息学院 |
| |
| 基金项目： | 国家重点研究计划(批准号:2018YFB1802100)资助的课题. |
| |
| 摘 要： | AlGaN/GaN HEMT外部边缘电容Cofd是由栅极垂直侧壁与二维电子气水平壁之间的电场构成的等效电容.本文基于保角映射法对Cofd进行物理建模,考虑沟道长度调制效应,研究外部偏置、阈值电压漂移和温度变化对Cofd的影响:随着漏源偏压从零开始增加,Cofd先保持不变再开始衰减,其衰减速率随栅源偏压的增加而减缓;AlGaN势垒层中施主杂质浓度的减小和Al组分的减小都可引起阈值电压的正向漂移,正向阈值漂移会加强沟道长度调制效应对Cofd的影响,导致Cofd呈线性衰减.在大漏极偏压工作情况下,Cofd对器件工作温度的变化更加敏感.
|
| 关 键 词： | HEMT 外部边缘电容 沟道长度调制效应 模型 |
The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances |
| |
| Liu Nai-Zhang,Zhang Xue-Bing,Yao Ruo-He.The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances[J].Acta Physica Sinica,2020(7):256-264. |
| |
| Authors: | Liu Nai-Zhang Zhang Xue-Bing Yao Ruo-He |
| |
| Affiliation: | (School of Electronics and Information Technology,South China University of Technology,Guangzhou 510640,China) |
| |
| Abstract: | With the development of the application of AlGaN/GaN high electron mobility transistors in the radio frequency field,a capacitance model that can accurately describe the C-V characteristics of the device has become an important research topic.The gate capacitance of GaN HEMT can be divided into two parts:intrinsic capacitance and fringing capacitance related to two-dimensional electronic gas(2 DEG)electrode.The fringing capacitance plays an important part in the switching device.The outer fringing capacitance Cofs/ddominates the fringing capacitance and is affected by the bias applied,especially the drain outer fringing capacitance Cofd.In order to establish the Cofd model which is related to the bias condition,the physics-based model of Cofdis established based on the conformal mapping,including the drain channel length variable.Since the drain channel length is related to the bias applied,the channel length modulation effect can be used to study how bias apllied effect the channel,and the relationship between Cofd and the bias condition is obtained.In addition,the threshold voltage variable is introduced when the channel length modulation effect is considered,and the threshold voltage drift caused by changes in the internal parameters and temperature of the device is studied using the threshold voltage variable in the model,and the relationship between Cofd and threshold voltage and temperature under different bias was obtained.It is found from the results of the study that as drain bias increases from zero,the channel length modulation effect keeps Cofd unchanged at lower drain bias.When the drain bias continues to increase,Cofdbegins to decay again,and its decay rate slows down with the increase of gate bias.The decrease of donor impurity concentration and Al component in AlGaN barrier layer may increase the threshold voltage,which will strengthen the channel length modulation effect on Cofd,resulting in linear attenuation of Cofd.With the increasing of drain bias,the influence of threshold voltage shift on Cofd is enhanced,and the change of device operating temperature will enhance the threshold voltage shift and cause the deviation of Cofd.Moreover,with the continuous increase of drain bias,Cofd becomes more sensitive to the temperature variation. |
| |
| Keywords: | HEMT outer fringing capacitances channel length modulation effect model |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
|
