Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄 关键词： 3')" href="#">BaTiO₃ 纳米复合薄膜 紫外光电子能谱     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO3纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO3纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100 nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30 nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO3纳米复合薄膜的价带谱.研究表明:当Co浓度很高时其态密度(DOS)与晶体BaTiO3明显不同.此外,嵌埋纳米Co颗粒的BaTiO3薄膜的能带结构可用纳米颗粒的浓度来调制,从而也可对其光学和电学性质进行改性.     

Fe/ZnO (0001)体系界面相互作用中薄膜厚度效应的光电子能谱研究

利用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)技术,系统研究了室温下Fe/ZnO界面形成过程中Fe薄膜与氧结尾的ZnO(000 1 )衬底之间的相互作用,结果显示初始沉积的Fe明显被表面氧氧化为Fe²⁺离子,在Fe覆盖度为0—3 nm的范围内,分别观察到与界面电荷传输、化学反应以及薄膜磁性相关的三个有意义的临界厚度,这一结果将有助于基于Fe/ZnO界面的相关器件的设计和研发. 关键词： Fe/ZnO 界面作用 同步辐射光电子能谱 X射线光电子能谱     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法，在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构，当薄膜厚度约为30 nm时，薄膜为单一择优取向；当薄膜厚度约为100nm时，薄膜呈多晶结构.原子力显微镜(AFM)分析表明，当膜厚为30nm时，薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄     

NiTi合金薄膜厚度对相变温度影响的X射线光电子能谱分析

采用X射线衍射和X射线光电子能谱实验手段对不同厚度的NiTi薄膜相变温度的变化进行了分析.结果表明在相同衬底温度和退火条件下,3?μm厚度的薄膜晶化温度高于18?μm厚度的薄膜.衬底温度越高,薄膜越易晶化,退火后薄膜奥氏体相转变温度As越低.薄膜的表面有TiO₂氧化层形成,氧化层阻止了Ni原子渗出;膜与基片的界面存在Ti₂O₃和NiO.由于表面和界面氧化层的存在,不同厚度的薄膜内层的厚度也不同,因而薄膜越薄,Ni原子的含量就越高.Ni原子的含量的不同会影响薄膜的相变温度. 关键词： NiTi合金薄膜 X射线衍射 相变 X射线光电子能谱     

纳米厚度贫铀/Au多层膜的制备及特性研究

理论和实验研究表明,纳米厚度周期调制的贫铀(DU)/Au多层膜材料具有高效的激光X射线转换效率. 采用交替磁控溅射制备纳米厚度的DU/Au平面多层周期结构,通过白光干涉仪、扫描电子显微镜、 X射线光电子能谱对DU/Au多层膜的几何参数、表面形貌、成分以及界面形貌进行表征.实验结果表明: 8 nm为Au连续成膜的厚度阈值,结合理论计算最优化原子配比,选取DU层厚度为30 nm、 Au层厚度为8 nm的调制周期结构;实测周期厚度为37 nm;扫描电子显微镜照片显示DU/Au分层明显; X射线光电子能谱深度刻蚀分析表明DU/Au界面处存在扩散, DU, Au, O三者原子比为73:26:1; 由于团簇效应, Au原子4f电子结合能向高能端移动,没有观察到DU相应的电子结合能移动现象.     

利用小角X射线散射技术研究组分对聚酰亚胺/Al2O3杂化薄膜界面特性与分形特征的影响

采用溶胶-凝胶方法制备无机纳米杂化聚酰亚胺(PI),应用同步辐射小角X射线散射(SAXS)方法研究不同组分杂化PI薄膜的界面特性与分形特征.研究结果表明:散射曲线不遵守Porod定理,形成负偏离,说明薄膜中有机相与Al₂O₃纳米颗粒间存在界面层,界面层厚度在0.54 nm到1.48 nm范围内;随无机纳米组分增加,界面层厚度增加,有机相与无机相作用变强;无机纳米颗粒同时具有质量分形和表面分形特征,其分布、集结是一种非线性动力学过程;随组分增加,其质量分形维数降低 关键词： 小角X射线散射 纳米杂化 聚酰亚胺 界面     

发光多孔硅的X射线光电子能谱深度剖析

用X射线光电子能谱测量了经电解腐蚀后硅片表面的发光物质.发现发光膜中与发光有关的物质为硅氧化合物,其成分与二氧化硅接近,但O/Si小于2,并含有约百分之一数量级的氟,由氩离子刻蚀条件估算发光膜的厚度为微米数量级.随氩离子束的轰击,发光膜的发光强度下降,波长红移. 关键词：     

脉冲激光沉积Ag:BaTiO3纳米复合薄膜及其光学特性

在MgO(100)基片上利用脉冲激光沉积技术制备了掺有Ag纳米颗粒的BaTiO₃复合薄膜.通过X射线衍射对薄膜的结构进行了表征,利用透射电子显微镜对Ag纳米颗粒的尺寸、形态进行了观测,X射线光电子能谱结果表明Ag呈金属态.在410—500nm范围内观测到了Ag纳米颗粒引起的等离子振荡峰,随着后处理温度和Ag颗粒浓度的增加,吸收峰发生红移,并出现了双峰现象. 关键词： 金属纳米复合薄膜 激光沉积 光吸收     

x射线磁性圆二色吸收谱分析Co膜厚度对原子磁矩和自旋磁矩的影响

利用软x射线磁性圆二色吸收谱(XMCD)研究了Si衬底上沉积的不同厚度的Co膜的轨道磁矩和 自旋磁矩.样品是磁控溅射方法制备的，膜的厚度分别是2nm,10nm和30nm，并在表面覆盖0.8 —1nm厚的金膜防止样品的氧化.根据XMCD求和定则计算得到的轨道磁矩和自旋磁矩分别是0. 249—0.195μ_B(玻尔磁子)和1.230—1.734μ_B.随着膜厚的减小，C o原子的轨道磁矩增加，而自旋磁矩下降.轨道磁矩与总磁矩的比值由0.101上升至0.168，即 2nm膜中Co原子的轨道磁矩对总磁矩的贡献比30nm膜中Co原子的大了83%. 关键词： x射线磁性圆二色 磁性薄膜 轨道磁矩和自旋磁矩 厚度效应     

Valence control of cobalt oxide thin films by annealing atmosphere

The cobalt oxide (CoO and Co₃O₄) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH₃OCH₂CH₂OH and Co(NO₃)₂·6H₂O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co₃O₄ thin film was obtained by annealing in air at 300-600, and N₂ at 300, and transferred to CoO thin film by raising annealing temperature in N₂. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.     

Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

Ba(Zr_0.05Ti_0.95)O₃ (BZT) thin films grown on Pt/Ti/SiO₂/Si(1 0 0) substrates were prepared by chemical solution deposition. The structural and surface morphology of BZT thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results showed that the random oriented BZT thin film grown on Pt/Ti/SiO₂/Si(1 0 0) substrate with a perovskite phase. The SEM surface image showed that the BZT thin film was crack-free. And the average grain size and thickness of the BZT film are 35 and 400 nm, respectively. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Ti, and Zr exist mainly in the forms of BZT perovskite structure.     

Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing

Tin dioxide (SnO₂) thin films were deposited by plasma enhanced-atomic layer deposition (PE-ALD) on Si(1 0 0) substrate using dibutyl tin diacetate (DBTA) ((CH₃CO₂)₂Sn[(CH₂)₃-CH₃]₂) as precursor. The process parameters were optimized as a function of substrate temperature, source temperature and purging time. It is observed that the surface phenomenon of the thin films was changed with film thickness. Atomic force microscopy (AFM) images and X-ray diffraction (XRD) pattern were used to observe the texture and crystallanity of the films. The films deposited for 100, 200 and 400 cycles were characterized by XPS to determine the chemical bonding properties. XPS results reveal that the surface dominant oxygen species for 100, 200 and 400 cycles deposited films are O₂⁻, O⁻ and O²⁻, respectively. The 200 cycles film has exhibited highest concentration of oxygen (O⁻) species before and after annealing. Conductivity studies revel that this film has best adsorption strength to the oxygen ions forming on the surface. The sensor with 200 cycles SnO₂ thin film has shown highest sensitivity to CO gas than other films. A correlation between the characteristics of Sn3d_5/2 and O1s XPS spectra before and after annealing and the electrical behavior of the SnO₂ thin films is established.     

Surface structure and composition of flat titanium thin films as a function of film thickness and evaporation rate

To correlate flat titanium film surface properties with deposition parameters, titanium flat thin films were systematically deposited on glass substrates with various thicknesses and evaporation rates by electron-beam evaporation. The chemical compositions, crystal structure, surface topographies as well as wettability were investigated by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and water contact angle measurement, respectively. The films consisted mainly of TiO₂. Small percentages of Ti₂O₃ and metallic Ti were also found at the film surface using high-resolution XPS analysis. Quantitative XPS showed little differences regarding elemental compositions among different groups of films. The films were obtained by varying the deposition rate and the film thickness, respectively. XRD data showed consistent reflection patterns of the different titanium samples deposited using different film thicknesses. Without exception measurements of all samples exhibited contact angles of 80° ± 5°. Quantitative AFM characterization demonstrated good correlation tendency between surface roughness and film thickness or evaporation rate, respectively. It is important to notice that titanium films with different sizes of grains on their surfaces but having the same chemistry and film bulk structure can be obtained in a controllable way. By increasing the film thickness and evaporation rate, the surface roughness increased. The surface morphology and grain size growth displayed a corresponding trend. Therefore, the control of these parameters allows us to prepare titanium films with desired surface properties in a controllable and reproducible way for further biological investigations of these materials.     

Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics

In situ X-ray photoelectron spectroscopy (XPS) and ex situ atomic force microscopy (AFM) were used to study the growth of thin cobalt films at room temperature (RT) on both clean and H-terminated Si(0 0 1) and Si(1 1 1) surfaces. The growth proceeds by first forming an initial CoSi₂-like phase at the growth front of the Si substrate. With increasing Co coverage the interfacial layer composition becomes richer in Co and eventually a metallic Co film is formed on top. Hydrogen termination of the Si surface did not suppress the reaction of Co and Si. A pseudo-layer-by-layer growth mode is proposed to describe the growth of Co on H-terminated Si surfaces, while closed-packed small island growth occurs on clean Si surfaces. The difference in growth mode can be attributed to the increase in the surface mobility of Co adatoms in the presence of hydrogen.     

XPS study of the deposited Ti layer in a magnetron-type sputter ion pump

X-ray photoelectron spectroscopy (XPS) was used to study the surface chemical composition of the anode deposits in a miniature magnetron ion pump. The pump was mounted on an UHV system with the ultimate pressure of 1 × 10⁻⁹ mbar. A stable discharge was established in the nitrogen atmosphere with some traces of CO at about 10⁻⁷ mbar. The cathode was made of pure titanium. The sputtered titanium atoms deposited on the anode, where they reacted with gases to form a film of titanium compounds. The thickness of the deposited titanium layer on the anode was about 100 nm. The results from XPS investigations indicate that active gases such as O₂ and N₂ react with Ti forming TiO₂ and TiN. While carbon containing molecules just adsorb on the surface and do not form carbide. In the bulk of the deposited layer almost pure TiN was found with some traces of oxygen and carbon. The part of carbon was bonded to TiC, which can be caused by ion sputtering during the depth profiling.     

Photoemission study of SrTiO<Subscript>3</Subscript> surface layers instability upon metal deposition

In this work we study the Pt/SrTiO₃ (STO) interface system using X-ray photoelectron spectroscopy (XPS). The polycrystalline Pt layers with a thickness of about 2–3 nm are deposited by sputtering and thermal evaporation methods on STO(100) single crystals with two different type of terminations. We propose and show local conductivity (LC) measurements as a good method to check whether such very thin metal layers are continuous. The XPS data show that both methods of Pt deposition lead to changes of the chemical composition of the crystal surface layers, and such chemical instability should be taken into consideration when studying the physical properties of a metal–insulator interface. PACS 68.35.-p; 68.35.Dy; 73.40.Ns; 79.60.-i; 81.07.–b     

Selective adhesion of intestinal epithelial cells on patterned films with amine functionalities formed by plasma enhanced chemical vapor deposition

Control of cell adhesion to surfaces is important to develop analytical tools in the areas of biomedical engineering. To control cell adhesiveness of the surface, we constructed a variety of plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films deposited at the plasma power range of 10-100 W by plasma enhanced chemical vapor deposition (PECVD). The PPHMDSO film that was formed at 10 W was revealed to be resistant to cell adhesion. The resistance to cell adhesion is closely related to physicochemical properties of the film. Atomic force microscopic data show an increase in surface roughness from 0.52 nm to 0.74 nm with increasing plasma power. From Fourier transform infrared (FT-IR) absorption spectroscopy data, it was also determined that the methyl (-CH₃) peak intensity increases with increasing plasma power, whereas the hydroxyl (-OH) peak decreases. X-ray photoelectron spectroscopy data reveal an increase in C-O bonding with increasing plasma power. These results suggest that C-O bonding and hydroxyl (-OH) and methyl (-CH₃) functional groups play a critical part in cell adhesion. Furthermore, to enhance a diversity of film surface, we accumulated the patterned plasma polymerized ethylenediamine (PPEDA) thin film on the top of the PPHMDSO thin film. The PPEDA film is established to be strongly cell-adherent. This patterned two-layer film stacking method can be used to form the selectively limited cell-adhesive PPEDA spots over the adhesion-resistant surface.